JP5995563B2 - 光デバイスの加工方法 - Google Patents
光デバイスの加工方法 Download PDFInfo
- Publication number
- JP5995563B2 JP5995563B2 JP2012155265A JP2012155265A JP5995563B2 JP 5995563 B2 JP5995563 B2 JP 5995563B2 JP 2012155265 A JP2012155265 A JP 2012155265A JP 2012155265 A JP2012155265 A JP 2012155265A JP 5995563 B2 JP5995563 B2 JP 5995563B2
- Authority
- JP
- Japan
- Prior art keywords
- optical device
- device wafer
- wafer
- laser processing
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Description
波長 :355nm(YAGレーザーの第3高調波)
平均出力 :2W
加工送り速度 :100mm/秒
波長 :1064nm
平均出力 :0.1〜0.2W
加工送り速度 :600mm/秒
12 レーザービーム照射ユニット
13 サファイア基板
15 発光層(エピタキシャル層)
17 分割予定ライン
18 レーザービーム発生ユニット
19 光デバイス
20 レーザービーム発生ユニット
21 傾斜面
23 レーザービーム照射ライン
27 レーザー加工溝
33,35,37,39 光デバイス
36 支持台
38 分割バー
Claims (1)
- 発光層を有する四角形の表面と、該表面と平行な四角形の裏面と、該表面と該裏面とを連結する第1乃至第4側面を有し、該第1側面乃至該第4側面は該表面の垂直線から互いに同一の角度傾斜し、前記表面から前記裏面に至る断面形状が平行四辺形である光デバイスの加工方法であって、
表面に発光層を有し、複数の交差する分割予定ラインが設定され該分割予定ラインで区画された該発光層の各領域にそれぞれ光デバイスを有する光デバイスウエーハを準備するウエーハ準備ステップと、
光デバイスウエーハに該光デバイスの前記第1乃至第4側面に対応した複数の傾斜面を設定する傾斜面設定ステップと、
該傾斜面設定ステップを実施した後、光デバイスウエーハに対して吸収性を有する波長のレーザービームを該傾斜面に沿って照射して該傾斜面に沿ったレーザー加工溝を形成するレーザー加工ステップと、
前記レーザー加工ステップを実施した後、光デバイスウエーハに外力を付与して光デバイスウエーハを個々の光デバイスへと分割する分割ステップと、
を備えた光デバイスの加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012155265A JP5995563B2 (ja) | 2012-07-11 | 2012-07-11 | 光デバイスの加工方法 |
TW102117880A TWI578561B (zh) | 2012-07-11 | 2013-05-21 | Processing of optical components |
KR1020130072819A KR101939409B1 (ko) | 2012-07-11 | 2013-06-25 | 광 디바이스 및 광 디바이스의 가공 방법 |
US13/937,976 US20140014976A1 (en) | 2012-07-11 | 2013-07-09 | Optical device and processing method of the same |
CN201310287638.3A CN103545409B (zh) | 2012-07-11 | 2013-07-10 | 光器件以及光器件的加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012155265A JP5995563B2 (ja) | 2012-07-11 | 2012-07-11 | 光デバイスの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014017433A JP2014017433A (ja) | 2014-01-30 |
JP5995563B2 true JP5995563B2 (ja) | 2016-09-21 |
Family
ID=49913220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012155265A Active JP5995563B2 (ja) | 2012-07-11 | 2012-07-11 | 光デバイスの加工方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140014976A1 (ja) |
JP (1) | JP5995563B2 (ja) |
KR (1) | KR101939409B1 (ja) |
CN (1) | CN103545409B (ja) |
TW (1) | TWI578561B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015138815A (ja) * | 2014-01-21 | 2015-07-30 | 株式会社ディスコ | 光デバイス及び光デバイスの加工方法 |
US10353453B2 (en) * | 2014-02-25 | 2019-07-16 | Dell Products L.P. | Methods and systems for multiple module power regulation in a modular chassis |
JP6301726B2 (ja) * | 2014-05-07 | 2018-03-28 | 株式会社ディスコ | 光デバイスの加工方法 |
JP2016054205A (ja) * | 2014-09-03 | 2016-04-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016111119A (ja) * | 2014-12-04 | 2016-06-20 | 株式会社ディスコ | 光デバイスの加工方法 |
JP6494334B2 (ja) * | 2015-03-05 | 2019-04-03 | 株式会社ディスコ | デバイスチップの製造方法 |
JP6407066B2 (ja) * | 2015-03-06 | 2018-10-17 | 株式会社ディスコ | 光デバイスチップの製造方法 |
JP6746224B2 (ja) * | 2016-11-18 | 2020-08-26 | 株式会社ディスコ | デバイスチップパッケージの製造方法 |
JP7277782B2 (ja) * | 2019-12-27 | 2023-05-19 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
CN111267248A (zh) * | 2020-03-12 | 2020-06-12 | 常州时创能源股份有限公司 | 非100晶向单晶硅片的制备方法 |
CN116113517A (zh) * | 2020-07-15 | 2023-05-12 | 浜松光子学株式会社 | 激光加工装置、及激光加工方法 |
US20230219172A1 (en) * | 2020-07-15 | 2023-07-13 | Hamamatsu Photonics K.K. | Laser machining apparatus, laser machining method, and method for manufacturing semiconductor member |
KR20230037547A (ko) * | 2020-07-15 | 2023-03-16 | 하마마츠 포토닉스 가부시키가이샤 | 레이저 가공 장치, 및 레이저 가공 방법 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3824678A (en) * | 1970-08-31 | 1974-07-23 | North American Rockwell | Process for laser scribing beam lead semiconductor wafers |
US5151389A (en) * | 1990-09-10 | 1992-09-29 | Rockwell International Corporation | Method for dicing semiconductor substrates using an excimer laser beam |
JPH10305420A (ja) * | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
US6229160B1 (en) * | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
US20050263854A1 (en) * | 1998-10-23 | 2005-12-01 | Shelton Bryan S | Thick laser-scribed GaN-on-sapphire optoelectronic devices |
JP2000195827A (ja) * | 1998-12-25 | 2000-07-14 | Oki Electric Ind Co Ltd | Ledアレイチップおよびその製造方法ならびにダイシング装置 |
DE10032838B4 (de) * | 2000-07-06 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung |
JP3715627B2 (ja) * | 2002-01-29 | 2005-11-09 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP3776824B2 (ja) * | 2002-04-05 | 2006-05-17 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
US20040169185A1 (en) * | 2003-02-28 | 2004-09-02 | Heng Liu | High luminescent light emitting diode |
US20050029646A1 (en) * | 2003-08-07 | 2005-02-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for dividing substrate |
JP4408361B2 (ja) * | 2003-09-26 | 2010-02-03 | 株式会社ディスコ | ウエーハの分割方法 |
KR100627006B1 (ko) * | 2004-04-01 | 2006-09-25 | 삼성전자주식회사 | 인덴트 칩과, 그를 이용한 반도체 패키지와 멀티 칩 패키지 |
JP4471852B2 (ja) * | 2005-01-21 | 2010-06-02 | パナソニック株式会社 | 半導体ウェハ及びそれを用いた製造方法ならびに半導体装置 |
US7611966B2 (en) * | 2005-05-05 | 2009-11-03 | Intel Corporation | Dual pulsed beam laser micromachining method |
JP2007019262A (ja) * | 2005-07-07 | 2007-01-25 | Toshiba Discrete Technology Kk | 半導体発光素子及び半導体発光素子の製造方法 |
JP4909657B2 (ja) | 2006-06-30 | 2012-04-04 | 株式会社ディスコ | サファイア基板の加工方法 |
JP2009124077A (ja) * | 2007-11-19 | 2009-06-04 | Denso Corp | 半導体チップ及びその製造方法 |
JP5671982B2 (ja) * | 2010-11-30 | 2015-02-18 | 三菱化学株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
CN102270717B (zh) * | 2011-07-15 | 2013-03-06 | 华灿光电股份有限公司 | 一种弯曲衬底侧面的发光二极管芯片及其制备方法 |
-
2012
- 2012-07-11 JP JP2012155265A patent/JP5995563B2/ja active Active
-
2013
- 2013-05-21 TW TW102117880A patent/TWI578561B/zh active
- 2013-06-25 KR KR1020130072819A patent/KR101939409B1/ko active IP Right Grant
- 2013-07-09 US US13/937,976 patent/US20140014976A1/en not_active Abandoned
- 2013-07-10 CN CN201310287638.3A patent/CN103545409B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR101939409B1 (ko) | 2019-01-16 |
US20140014976A1 (en) | 2014-01-16 |
TWI578561B (zh) | 2017-04-11 |
CN103545409B (zh) | 2019-01-01 |
TW201403855A (zh) | 2014-01-16 |
CN103545409A (zh) | 2014-01-29 |
KR20140008497A (ko) | 2014-01-21 |
JP2014017433A (ja) | 2014-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5995563B2 (ja) | 光デバイスの加工方法 | |
KR102341602B1 (ko) | 웨이퍼의 생성 방법 | |
KR102341591B1 (ko) | 웨이퍼의 생성 방법 | |
KR102354665B1 (ko) | 웨이퍼의 생성 방법 | |
KR102361277B1 (ko) | 웨이퍼의 생성 방법 | |
KR102341600B1 (ko) | 웨이퍼의 생성 방법 | |
KR100906543B1 (ko) | 피분할체에 있어서의 분할 기점 형성 방법, 피분할체의 분할 방법, 및 펄스 레이저광에 의한 피가공물의 가공방법 | |
JP5770436B2 (ja) | レーザー加工装置およびレーザー加工方法 | |
KR102341597B1 (ko) | 웨이퍼의 생성 방법 | |
JP2006245043A (ja) | Iii族窒化物系化合物半導体素子の製造方法及び発光素子 | |
WO2013176089A1 (ja) | 加工対象物切断方法、加工対象物、及び、半導体素子 | |
JP5308431B2 (ja) | レーザ光によるライン加工方法およびレーザ加工装置 | |
JP2012238746A (ja) | 光デバイスウエーハの分割方法 | |
JP2006245062A (ja) | Iii族窒化物系化合物半導体素子の製造方法及び発光素子 | |
JP6277017B2 (ja) | 光デバイス | |
JP2016207702A (ja) | 薄板の分離方法 | |
JP6494334B2 (ja) | デバイスチップの製造方法 | |
JP6366485B2 (ja) | ウエーハの生成方法 | |
JP6255192B2 (ja) | 光デバイス及び光デバイスの加工方法 | |
JP2016111119A (ja) | 光デバイスの加工方法 | |
JP2018120986A (ja) | 発光素子の製造方法 | |
JP6423135B2 (ja) | パターン付き基板の分割方法 | |
JP4740556B2 (ja) | レーザ光によるライン加工方法およびレーザ加工装置。 | |
JP5318545B2 (ja) | ウエーハ加工方法 | |
JP6008565B2 (ja) | 光デバイスウエーハの加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150625 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160209 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160318 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160823 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160823 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5995563 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |