JP6255192B2 - 光デバイス及び光デバイスの加工方法 - Google Patents
光デバイス及び光デバイスの加工方法 Download PDFInfo
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- JP6255192B2 JP6255192B2 JP2013182948A JP2013182948A JP6255192B2 JP 6255192 B2 JP6255192 B2 JP 6255192B2 JP 2013182948 A JP2013182948 A JP 2013182948A JP 2013182948 A JP2013182948 A JP 2013182948A JP 6255192 B2 JP6255192 B2 JP 6255192B2
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- optical device
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- light emitting
- emitting layer
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- 230000003287 optical effect Effects 0.000 title claims description 153
- 238000003672 processing method Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000002407 reforming Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 71
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000005755 formation reaction Methods 0.000 description 13
- 238000003825 pressing Methods 0.000 description 9
- 230000001902 propagating effect Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
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- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Description
(実施例1)
出力:0.1[W]
加工送り速度:1000[mm/s]
インデックIn:6μm
改質層Rの形成回数:4回
最初の改質層R1形成のデフォーカス量:40μm
2回目の改質層R2形成のデフォーカス量:32.5μm
3回目の改質層R3形成のデフォーカス量:25μm
4回目の改質層R4形成のデフォーカス量:17.5μm
(実施例2)
出力:0.1[W]
加工送り速度:1000[mm/s]
インデックIn:6μm
改質層Rの形成回数:2回
最初の改質層R1形成のデフォーカス量:30μm
2回目の改質層R2形成のデフォーカス量:20μm
21 基台
21a 表面
21b 裏面
21c 側面
22 発光層
25 凹部
26 凸部
ST 予定分割ライン
W 光デバイスウェーハ
W1 基台
W2 発光層
Claims (1)
- 基台と、該基台の表面に形成された発光層と、を含む光デバイスであって、
該基台は四角形の表面と、該表面と平行で同等形状の四角形の裏面と、該表面及び該裏面を連結する4つの側面とを有し、
該基台と該発光層を厚み方向に切断した場合の該側面の断面形状は、凹部及び凸部が交互に形成された波形状に形成されている光デバイスの加工方法であって、
表面に発光層を有し、複数の交差する分割予定ラインが形成され該分割予定ラインで区画された該発光層の各領域にそれぞれ光デバイスを有する光デバイスウェーハの表面側に保護テープを貼着する貼着工程と、
該貼着工程を実施した後に、該光デバイスウェーハに対して透過性を有する波長のレーザー光線を、該光デバイスウェーハの裏面側から該分割予定ラインに沿って、該光デバイスウェーハの表面から所定量裏面方向の位置に集光点を位置付けて照射して最初の改質層を形成し、次いで集光点を段階的に該裏面方向に移動しつつ複数回繰り返し表面側から裏面側に渡って複数の改質層を形成する改質層形成工程と、
該改質層形成工程を実施した後に、光デバイスウェーハに外力を付与して光デバイスウェーハを個々の光デバイスへと分割する分割工程と、から構成され、
該改質層形成工程において、複数の改質層は、光デバイスウェーハの厚み方向で隣接する改質層どうしが分割予定ラインの幅方向に所定量離隔させて互い違いに形成され、
該分割工程においては、光デバイスウェーハは、該分割予定ラインの幅方向に互い違いに形成されて光デバイスウェーハの厚み方向に隣接する改質層間に亀裂が形成され、該基台と該発光層を厚み方向に切断した場合の断面形状で凹部及び凸部が交互に形成された波形状に該表面から該裏面に渡って分割されること、
を特徴とする光デバイスの加工方法。
Priority Applications (3)
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JP2013182948A JP6255192B2 (ja) | 2013-09-04 | 2013-09-04 | 光デバイス及び光デバイスの加工方法 |
TW103126042A TWI623366B (zh) | 2013-09-04 | 2014-07-30 | 光裝置之加工方法 |
US14/471,298 US9287176B2 (en) | 2013-09-04 | 2014-08-28 | Optical device and manufacturing method therefor |
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JP2013182948A JP6255192B2 (ja) | 2013-09-04 | 2013-09-04 | 光デバイス及び光デバイスの加工方法 |
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JP6255192B2 true JP6255192B2 (ja) | 2017-12-27 |
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US (1) | US9287176B2 (ja) |
JP (1) | JP6255192B2 (ja) |
TW (1) | TWI623366B (ja) |
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JP2015138815A (ja) * | 2014-01-21 | 2015-07-30 | 株式会社ディスコ | 光デバイス及び光デバイスの加工方法 |
JP6495056B2 (ja) * | 2015-03-06 | 2019-04-03 | 株式会社ディスコ | 単結晶基板の加工方法 |
US20160276535A1 (en) * | 2015-03-19 | 2016-09-22 | Epistar Corporation | Light emitting device and method of fabricating the same |
US9893231B2 (en) | 2015-03-19 | 2018-02-13 | Epistar Corporation | Light emitting device and method of fabricating the same |
JP6265175B2 (ja) * | 2015-06-30 | 2018-01-24 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
JP6494467B2 (ja) * | 2015-08-06 | 2019-04-03 | 株式会社ディスコ | ウェーハの加工方法 |
US20210296176A1 (en) * | 2020-03-23 | 2021-09-23 | Semiconductor Components Industries, Llc | Structure and method for electronic die singulation using alignment structures and multi-step singulation |
JP7206550B2 (ja) | 2020-09-30 | 2023-01-18 | 日亜化学工業株式会社 | 発光素子の製造方法 |
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DE19632627A1 (de) * | 1996-08-13 | 1998-02-19 | Siemens Ag | Verfahren zum Herstellen eines Licht aussendenden und/oder empfangenden Halbleiterkörpers |
JPH10305420A (ja) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
US6818532B2 (en) * | 2002-04-09 | 2004-11-16 | Oriol, Inc. | Method of etching substrates |
US7008861B2 (en) * | 2003-12-11 | 2006-03-07 | Cree, Inc. | Semiconductor substrate assemblies and methods for preparing and dicing the same |
JP2007165850A (ja) * | 2005-11-16 | 2007-06-28 | Denso Corp | ウェハおよびウェハの分断方法 |
JP5221007B2 (ja) * | 2006-05-31 | 2013-06-26 | アイシン精機株式会社 | 発光ダイオードチップ及びウェハ分割加工方法 |
JP4909657B2 (ja) | 2006-06-30 | 2012-04-04 | 株式会社ディスコ | サファイア基板の加工方法 |
JP2009004625A (ja) * | 2007-06-22 | 2009-01-08 | Sanken Electric Co Ltd | 半導体発光装置 |
JP2011134955A (ja) * | 2009-12-25 | 2011-07-07 | Disco Abrasive Syst Ltd | 板状材料からのチップ状部品の生産方法 |
KR101259483B1 (ko) * | 2011-06-01 | 2013-05-06 | 서울옵토디바이스주식회사 | 반도체 발광 소자 및 그 제조 방법 |
EP2721654B1 (en) * | 2011-06-15 | 2016-11-16 | Seoul Viosys Co., Ltd. | Semiconductor light emitting device and method of manufacturing the same |
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- 2013-09-04 JP JP2013182948A patent/JP6255192B2/ja active Active
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2014
- 2014-07-30 TW TW103126042A patent/TWI623366B/zh active
- 2014-08-28 US US14/471,298 patent/US9287176B2/en active Active
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Publication number | Publication date |
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US9287176B2 (en) | 2016-03-15 |
US20150064824A1 (en) | 2015-03-05 |
TW201509577A (zh) | 2015-03-16 |
JP2015050415A (ja) | 2015-03-16 |
TWI623366B (zh) | 2018-05-11 |
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