KR100309934B1 - 박막트랜지스터,고체장치,표시장치,및박막트랜지스터의제조방법 - Google Patents

박막트랜지스터,고체장치,표시장치,및박막트랜지스터의제조방법 Download PDF

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Publication number
KR100309934B1
KR100309934B1 KR1019940700563A KR19940700563A KR100309934B1 KR 100309934 B1 KR100309934 B1 KR 100309934B1 KR 1019940700563 A KR1019940700563 A KR 1019940700563A KR 19940700563 A KR19940700563 A KR 19940700563A KR 100309934 B1 KR100309934 B1 KR 100309934B1
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KR
South Korea
Prior art keywords
thin film
region
film transistor
gate electrode
drain region
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Expired - Lifetime
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KR1019940700563A
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English (en)
Korean (ko)
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KR940702312A (ko
Inventor
이노우에사또시
Original Assignee
구사마 사부로
세이코 엡슨 가부시키가이샤
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Publication of KR100309934B1 publication Critical patent/KR100309934B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6719—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
KR1019940700563A 1992-06-24 1993-06-23 박막트랜지스터,고체장치,표시장치,및박막트랜지스터의제조방법 Expired - Lifetime KR100309934B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP16602192 1992-06-24
JP92-166021 1992-06-24
JP31533192 1992-11-25
JP92-315331 1992-11-25
JP32531592 1992-12-04
JP92-325315 1992-12-04
PCT/JP1993/000849 WO1994000882A1 (fr) 1992-06-24 1993-06-23 Transistor a couches minces, dispositif a semi-conducteurs, dispositif d'affichage et procede de fabrication d'un transistor a couches minces

Publications (2)

Publication Number Publication Date
KR940702312A KR940702312A (ko) 1994-07-28
KR100309934B1 true KR100309934B1 (ko) 2002-06-20

Family

ID=27322616

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940700563A Expired - Lifetime KR100309934B1 (ko) 1992-06-24 1993-06-23 박막트랜지스터,고체장치,표시장치,및박막트랜지스터의제조방법

Country Status (6)

Country Link
US (2) US5508216A (enExample)
EP (1) EP0602250B1 (enExample)
KR (1) KR100309934B1 (enExample)
DE (1) DE69326123T2 (enExample)
TW (1) TW268133B (enExample)
WO (1) WO1994000882A1 (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953582A (en) * 1993-02-10 1999-09-14 Seiko Epson Corporation Active matrix panel manufacturing method including TFTS having variable impurity concentration levels
DE19500380C2 (de) * 1994-05-20 2001-05-17 Mitsubishi Electric Corp Aktivmatrix-Flüssigkristallanzeige und Herstellungsverfahren dafür
JP3403812B2 (ja) * 1994-05-31 2003-05-06 株式会社半導体エネルギー研究所 薄膜トランジスタを用いた半導体装置の作製方法
US6133620A (en) 1995-05-26 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
JP3494720B2 (ja) * 1994-11-01 2004-02-09 株式会社半導体エネルギー研究所 半導体装置及びその作製方法、ならびにアクティブマトリクス型の液晶ディスプレー及びイメージセンサー
KR0146899B1 (ko) * 1994-11-28 1998-09-15 김광호 액정 디스플레이 박막트랜지스터소자 및 제조 방법
KR0145900B1 (ko) * 1995-02-11 1998-09-15 김광호 박막 트랜지스터 액정디스플레이 소자 및 그 제조방법
JP3292657B2 (ja) * 1995-04-10 2002-06-17 キヤノン株式会社 薄膜トランジスタ及びそれを用いた液晶表示装置の製造法
US6933182B1 (en) * 1995-04-20 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and manufacturing system thereof
KR100218500B1 (ko) 1995-05-17 1999-09-01 윤종용 실리콘막 및 그 제조 방법과 이를 포함하는 박막트랜지스터 및 그 제조방법
JPH0955499A (ja) * 1995-08-11 1997-02-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100192593B1 (ko) * 1996-02-21 1999-07-01 윤종용 폴리 실리콘 박막 트랜지스터의 제조방법
JP3527009B2 (ja) * 1996-03-21 2004-05-17 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3525316B2 (ja) * 1996-11-12 2004-05-10 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
US6140160A (en) 1997-07-28 2000-10-31 Micron Technology, Inc. Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure
KR100269600B1 (ko) * 1997-09-24 2000-10-16 김영환 박막트랜지스터의 제조방법
JPH11112002A (ja) * 1997-10-07 1999-04-23 Semiconductor Energy Lab Co Ltd 半導体装置およびその製造方法
KR19990039940A (ko) * 1997-11-15 1999-06-05 구자홍 박막트랜지스터 제조방법
US6338987B1 (en) 1998-08-27 2002-01-15 Lg.Philips Lcd Co., Ltd. Method for forming polycrystalline silicon layer and method for fabricating thin film transistor
JP4536186B2 (ja) * 1998-11-16 2010-09-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6501098B2 (en) 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
KR20000033832A (ko) * 1998-11-26 2000-06-15 윤종용 액정 표시 장치용 다결정 규소 박막 트랜지스터 기판의 제조 방법
JP4641582B2 (ja) * 1998-12-18 2011-03-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4372943B2 (ja) 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6674136B1 (en) * 1999-03-04 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having driver circuit and pixel section provided over same substrate
US6531713B1 (en) 1999-03-19 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
TW444257B (en) 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
KR100333276B1 (ko) * 1999-05-20 2002-04-24 구본준, 론 위라하디락사 액정표시장치의 ｔｆｔ 및 그 제조방법
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
TW515109B (en) * 1999-06-28 2002-12-21 Semiconductor Energy Lab EL display device and electronic device
JP2001015553A (ja) * 1999-06-29 2001-01-19 Rohm Co Ltd 半導体装置の製造方法
US6384427B1 (en) * 1999-10-29 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP4727029B2 (ja) * 1999-11-29 2011-07-20 株式会社半導体エネルギー研究所 Ｅｌ表示装置、電気器具及びｅｌ表示装置用の半導体素子基板
US7023021B2 (en) 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6274465B1 (en) * 2000-03-30 2001-08-14 International Business Machines Corporataion DC electric field assisted anneal
EP1139394A3 (en) 2000-03-30 2006-02-15 International Business Machines Corporation Method and device for electric field assisted anneal
TWI286338B (en) 2000-05-12 2007-09-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
KR100503581B1 (ko) * 2001-05-18 2005-07-25 산요덴키가부시키가이샤 박막 트랜지스터 및 액티브 매트릭스형 표시 장치 및이들의 제조 방법
JP5038560B2 (ja) 2001-08-01 2012-10-03 ゲットナー・ファンデーション・エルエルシー 電界効果型トランジスタ及びその製造方法並びに該トランジスタを使った液晶表示装置及びその製造方法
JP4256087B2 (ja) * 2001-09-27 2009-04-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6638776B2 (en) * 2002-02-15 2003-10-28 Lsi Logic Corporation Thermal characterization compensation
JP4271413B2 (ja) * 2002-06-28 2009-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100623230B1 (ko) * 2003-11-29 2006-09-18 삼성에스디아이 주식회사 박막 트랜지스터의 제조 방법
JP4211644B2 (ja) * 2004-03-15 2009-01-21 セイコーエプソン株式会社 電気光学装置の製造方法
TWI267213B (en) * 2006-01-27 2006-11-21 Ind Tech Res Inst Organic light emitting device with integrated color filter and method of manufacturing the same
EP2008264B1 (en) * 2006-04-19 2016-11-16 Ignis Innovation Inc. Stable driving scheme for active matrix displays
US8896065B2 (en) * 2008-04-14 2014-11-25 Sharp Laboratories Of America, Inc. Top gate thin film transistor with independent field control for off-current suppression
JP5234333B2 (ja) 2008-05-28 2013-07-10 Ｎｌｔテクノロジー株式会社 ゲート線駆動回路、アクティブマトリクス基板及び液晶表示装置
JP2015065202A (ja) 2013-09-24 2015-04-09 株式会社東芝 半導体素子、表示装置、半導体素子の製造方法及び表示装置の製造方法
KR102324764B1 (ko) * 2014-11-21 2021-11-10 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
US9508860B2 (en) * 2014-12-31 2016-11-29 Shenzhen China Star Optoelectronics Technology Co., Ltd. Lateral gate electrode TFT switch and liquid crystal display device
KR20240011902A (ko) * 2022-07-19 2024-01-29 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142566A (ja) * 1982-02-19 1983-08-24 Seiko Epson Corp 薄膜半導体装置
JPS58206121A (ja) * 1982-05-27 1983-12-01 Toshiba Corp 薄膜半導体装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294796B1 (en) * 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
JPH0697694B2 (ja) * 1983-08-25 1994-11-30 セイコーエプソン株式会社 相補型薄膜トランジスタ
JPH0740607B2 (ja) * 1984-10-03 1995-05-01 ソニー株式会社 薄膜トランジスタの製造方法
JPS61104371A (ja) * 1984-10-22 1986-05-22 Sony Corp 誤り率測定方法
JPS61104671A (ja) * 1984-10-29 1986-05-22 Sharp Corp 電界効果トランジスタ
JPS61170724A (ja) * 1985-01-25 1986-08-01 Seiko Instr & Electronics Ltd アクテイブマトリクス表示装置用基板
JPH02246277A (ja) * 1989-03-20 1990-10-02 Matsushita Electron Corp Ｍｏｓトランジスタおよびその製造方法
JPH0783127B2 (ja) * 1989-04-20 1995-09-06 三菱電機株式会社 半導体装置
JP2811786B2 (ja) * 1989-08-22 1998-10-15 セイコーエプソン株式会社 薄膜トランジスタ
JP2979196B2 (ja) * 1990-09-05 1999-11-15 セイコーインスツルメンツ株式会社 光弁用半導体基板装置及びその製造方法
JPH04139764A (ja) * 1990-10-01 1992-05-13 Canon Inc 絶縁ゲート薄膜トランジスタの製造方法
JP2794678B2 (ja) * 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JP2650543B2 (ja) 1991-11-25 1997-09-03 カシオ計算機株式会社 マトリクス回路駆動装置
US5266504A (en) * 1992-03-26 1993-11-30 International Business Machines Corporation Low temperature emitter process for high performance bipolar devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142566A (ja) * 1982-02-19 1983-08-24 Seiko Epson Corp 薄膜半導体装置
JPS58206121A (ja) * 1982-05-27 1983-12-01 Toshiba Corp 薄膜半導体装置の製造方法

Also Published As

Publication number Publication date
US5508216A (en) 1996-04-16
US5757048A (en) 1998-05-26
EP0602250A1 (en) 1994-06-22
KR940702312A (ko) 1994-07-28
TW268133B (enExample) 1996-01-11
DE69326123T2 (de) 1999-12-23
EP0602250B1 (en) 1999-08-25
DE69326123D1 (de) 1999-09-30
EP0602250A4 (en) 1996-01-03
WO1994000882A1 (fr) 1994-01-06

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