JPWO2015025499A1 - 酸化物半導体基板及びショットキーバリアダイオード - Google Patents

酸化物半導体基板及びショットキーバリアダイオード Download PDF

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JPWO2015025499A1
JPWO2015025499A1 JP2015532701A JP2015532701A JPWO2015025499A1 JP WO2015025499 A1 JPWO2015025499 A1 JP WO2015025499A1 JP 2015532701 A JP2015532701 A JP 2015532701A JP 2015532701 A JP2015532701 A JP 2015532701A JP WO2015025499 A1 JPWO2015025499 A1 JP WO2015025499A1
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oxide semiconductor
diode element
barrier diode
schottky barrier
semiconductor layer
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Japanese (ja)
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重和 笘井
重和 笘井
雅敏 柴田
雅敏 柴田
絵美 川嶋
絵美 川嶋
矢野　公規
公規 矢野
紘美 早坂
紘美 早坂
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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Publication of JPWO2015025499A1 publication Critical patent/JPWO2015025499A1/ja
Priority to JP2019031008A priority Critical patent/JP6989545B2/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2015532701A 2013-08-19 2014-08-08 酸化物半導体基板及びショットキーバリアダイオード Pending JPWO2015025499A1 (ja)

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JP2019031008A JP6989545B2 (ja) 2013-08-19 2019-02-22 酸化物半導体基板及びショットキーバリアダイオード

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JP2013169966 2013-08-19
JP2013169966 2013-08-19
PCT/JP2014/004153 WO2015025499A1 (ja) 2013-08-19 2014-08-08 酸化物半導体基板及びショットキーバリアダイオード

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JP2019031008A Active JP6989545B2 (ja) 2013-08-19 2019-02-22 酸化物半導体基板及びショットキーバリアダイオード
JP2020207470A Active JP7084465B2 (ja) 2013-08-19 2020-12-15 酸化物半導体基板及びショットキーバリアダイオード

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US (2) US9691910B2 (https=)
JP (3) JPWO2015025499A1 (https=)
KR (1) KR102226985B1 (https=)
CN (2) CN111668315B (https=)
TW (1) TWI615984B (https=)
WO (1) WO2015025499A1 (https=)

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JP6976858B2 (ja) * 2015-12-25 2021-12-08 出光興産株式会社 積層体
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WO2017110940A1 (ja) * 2015-12-25 2017-06-29 出光興産株式会社 半導体素子及びそれを用いた電気機器
CN107039439B (zh) 2016-02-04 2020-03-10 中芯国际集成电路制造(上海)有限公司 存储器及其形成方法
JP6770331B2 (ja) * 2016-05-02 2020-10-14 ローム株式会社 電子部品およびその製造方法
US20180097073A1 (en) * 2016-10-03 2018-04-05 Flosfia Inc. Semiconductor device and semiconductor system including semiconductor device
CN109863607A (zh) 2016-10-11 2019-06-07 出光兴产株式会社 结构物、该结构物的制造方法、半导体元件以及电子电路
JP2018137394A (ja) * 2017-02-23 2018-08-30 トヨタ自動車株式会社 半導体装置の製造方法
CN110870079B (zh) * 2017-07-08 2024-01-09 株式会社Flosfia 半导体装置
JP6977465B2 (ja) * 2017-10-06 2021-12-08 株式会社デンソー 半導体装置の製造方法
GB2569196B (en) 2017-12-11 2022-04-20 Pragmatic Printing Ltd Schottky diode
DE102020132743A1 (de) * 2019-12-13 2021-06-17 Denso Corporation Elektret
JP7392606B2 (ja) 2020-08-07 2023-12-06 トヨタ自動車株式会社 動力伝達装置の異常判定装置
JP7638125B2 (ja) 2021-03-25 2025-03-03 エヌ・ティ・ティ・コミュニケーションズ株式会社 医療システム及びコンピュータープログラム
CN117954504A (zh) * 2022-10-19 2024-04-30 广州华瑞升阳投资有限公司 一种肖特基势垒二极管

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Publication number Publication date
CN105453272B (zh) 2020-08-21
US20170263786A1 (en) 2017-09-14
US20160197202A1 (en) 2016-07-07
CN111668315A (zh) 2020-09-15
JP7084465B2 (ja) 2022-06-14
US11769840B2 (en) 2023-09-26
JP2019080084A (ja) 2019-05-23
TWI615984B (zh) 2018-02-21
KR20160043967A (ko) 2016-04-22
US9691910B2 (en) 2017-06-27
KR102226985B1 (ko) 2021-03-11
CN105453272A (zh) 2016-03-30
WO2015025499A1 (ja) 2015-02-26
JP6989545B2 (ja) 2022-01-05
CN111668315B (zh) 2023-09-12
JP2021052203A (ja) 2021-04-01
TW201515242A (zh) 2015-04-16

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