JPWO2005078796A1 - 電子部品及びその製造方法 - Google Patents
電子部品及びその製造方法 Download PDFInfo
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- JPWO2005078796A1 JPWO2005078796A1 JP2005517907A JP2005517907A JPWO2005078796A1 JP WO2005078796 A1 JPWO2005078796 A1 JP WO2005078796A1 JP 2005517907 A JP2005517907 A JP 2005517907A JP 2005517907 A JP2005517907 A JP 2005517907A JP WO2005078796 A1 JPWO2005078796 A1 JP WO2005078796A1
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
11 コア基板
12 能動チップ部品(能動部品)
13 受動チップ部品(受動部品)
14 第1の樹脂層
15 第2の樹脂層
16 シールド用金属膜
17 第1のビアホール導体
18 外部端子電極
19 第2のビアホール導体
Claims (6)
- 第1の主面に能動部品が搭載され且つ第1の主面と対向する第2の主面に受動部品が搭載されたコア基板と、このコア基板の第1、第2の主面それぞれに能動部品及び受動部品を封入する第1、第2の樹脂層とを備え、上記第1の樹脂層の上面にシールド用金属膜を設けると共にその内部に上記シールド用金属膜と上記第1の主面に形成された回路パターンとを接続する第1のビアホール導体を設け、且つ、上記第2の樹脂層の下面に外部端子電極を設けると共にその内部に上記外部端子電極と上記第2の主面に形成された回路パターンとを接続する第2のビアホール導体を設けたことを特徴とする電子部品。
- 上記能動部品を複数搭載すると共にこれらの能動部品の間に第1のビアホール導体を介在させたことを特徴とする請求項1に記載の電子部品。
- 上記シールド用金属膜及び上記外部端子電極をそれぞれ金属箔によって形成したことを特徴とする請求項1または請求項2に記載の電子部品。
- 上記コア基板は、樹脂多層基板であることを特徴とする請求項1〜請求項3のいずれか1項に記載の電子部品。
- 請求項1〜請求項5のいずれか1項に記載の電子部品を製造する方法であって、上記電子部品のコア基板の両面側それぞれに第1、第2の樹脂を配置する工程と、上記第1、第2の樹脂を上記コア基板に同時に熱圧着して上記コア基板の両面に第1、第2の樹脂層をそれぞれ形成する工程とを有することを特徴とする電子部品の製造方法。
- 上記第1の樹脂の上記コア基板とは反対側の面に金属箔を配置すると共に、上記第2の樹脂の上記コア基板とは反対側の面に金属箔を配置する工程を有することを特徴とする請求項5に記載の電子部品の製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004037541 | 2004-02-13 | ||
JP2004037541 | 2004-02-13 | ||
JP2004117471 | 2004-04-13 | ||
JP2004117471 | 2004-04-13 | ||
PCT/JP2004/018469 WO2005078796A1 (ja) | 2004-02-13 | 2004-12-10 | 電子部品及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2005078796A1 true JPWO2005078796A1 (ja) | 2008-01-10 |
JP4042785B2 JP4042785B2 (ja) | 2008-02-06 |
Family
ID=34863469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005517907A Active JP4042785B2 (ja) | 2004-02-13 | 2004-12-10 | 電子部品及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8759953B2 (ja) |
JP (1) | JP4042785B2 (ja) |
KR (1) | KR100753499B1 (ja) |
WO (1) | WO2005078796A1 (ja) |
Families Citing this family (33)
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US20070163802A1 (en) * | 2006-01-19 | 2007-07-19 | Triquint Semiconductors, Inc. | Electronic package including an electromagnetic shield |
JP4462332B2 (ja) * | 2007-11-05 | 2010-05-12 | セイコーエプソン株式会社 | 電子部品 |
JP4329884B2 (ja) * | 2007-11-20 | 2009-09-09 | 株式会社村田製作所 | 部品内蔵モジュール |
TWI420640B (zh) | 2008-05-28 | 2013-12-21 | 矽品精密工業股份有限公司 | 半導體封裝裝置、半導體封裝結構及其製法 |
US7851893B2 (en) * | 2008-06-10 | 2010-12-14 | Stats Chippac, Ltd. | Semiconductor device and method of connecting a shielding layer to ground through conductive vias |
TWI393239B (zh) * | 2009-10-16 | 2013-04-11 | Advanced Semiconductor Eng | 具有內屏蔽體之封裝結構及其製造方法 |
JP5045727B2 (ja) | 2009-10-21 | 2012-10-10 | ソニー株式会社 | 高周波モジュールおよび受信装置 |
JP5532141B2 (ja) * | 2010-10-26 | 2014-06-25 | 株式会社村田製作所 | モジュール基板及びモジュール基板の製造方法 |
WO2012165530A1 (ja) | 2011-06-03 | 2012-12-06 | 株式会社村田製作所 | 多層基板の製造方法および多層基板 |
JP5768888B2 (ja) | 2011-09-07 | 2015-08-26 | 株式会社村田製作所 | モジュールの製造方法および端子集合体 |
CN103828043B (zh) | 2011-09-07 | 2017-11-24 | 株式会社村田制作所 | 模块的制造方法及模块 |
US9030841B2 (en) * | 2012-02-23 | 2015-05-12 | Apple Inc. | Low profile, space efficient circuit shields |
KR101932495B1 (ko) * | 2012-05-11 | 2018-12-27 | 삼성전자주식회사 | 반도체 패키지 및 반도체 패키지의 제조 방법 |
US9177925B2 (en) * | 2013-04-18 | 2015-11-03 | Fairfchild Semiconductor Corporation | Apparatus related to an improved package including a semiconductor die |
JP5576542B1 (ja) * | 2013-08-09 | 2014-08-20 | 太陽誘電株式会社 | 回路モジュール及び回路モジュールの製造方法 |
KR20150035251A (ko) | 2013-09-27 | 2015-04-06 | 삼성전기주식회사 | 외부접속단자부와 외부접속단자부를 갖는 반도체 패키지 및 그들의 제조방법 |
KR20150053592A (ko) * | 2013-11-08 | 2015-05-18 | 삼성전기주식회사 | 전자 소자 모듈 및 그 제조 방법 |
DE102015000317A1 (de) | 2014-01-10 | 2015-07-16 | Fairchild Semiconductor Corporation | Isolierung zwischen Halbleiterkomponenten |
KR20150123420A (ko) * | 2014-04-24 | 2015-11-04 | 에스케이하이닉스 주식회사 | 반도체 패키지 및 그 제조 방법 |
JP2016139648A (ja) * | 2015-01-26 | 2016-08-04 | 株式会社東芝 | 半導体装置及びその製造方法 |
KR102117477B1 (ko) * | 2015-04-23 | 2020-06-01 | 삼성전기주식회사 | 반도체 패키지 및 반도체 패키지의 제조방법 |
CN208159008U (zh) * | 2015-08-10 | 2018-11-27 | 株式会社村田制作所 | 树脂多层基板 |
US10483249B2 (en) | 2015-12-26 | 2019-11-19 | Intel Corporation | Integrated passive devices on chip |
KR20170092309A (ko) | 2016-02-03 | 2017-08-11 | 삼성전기주식회사 | 양면 패키지 모듈 및 기판 스트립 |
JP6728917B2 (ja) | 2016-04-12 | 2020-07-22 | Tdk株式会社 | 電子回路モジュールの製造方法 |
JP6760397B2 (ja) * | 2016-12-14 | 2020-09-23 | 株式会社村田製作所 | モジュール |
CN111033722B (zh) * | 2017-09-04 | 2023-12-12 | 株式会社村田制作所 | 高频模块及其制造方法 |
CN111295749B (zh) * | 2017-11-02 | 2023-04-18 | 株式会社村田制作所 | 电路模块 |
CN215300624U (zh) | 2018-03-23 | 2021-12-24 | 株式会社村田制作所 | 高频模块和通信装置 |
US10930604B2 (en) | 2018-03-29 | 2021-02-23 | Semiconductor Components Industries, Llc | Ultra-thin multichip power devices |
CN112005501B (zh) | 2018-03-30 | 2022-12-16 | 株式会社村田制作所 | 高频模块以及具备该高频模块的通信装置 |
JP2021106341A (ja) | 2019-12-26 | 2021-07-26 | 株式会社村田製作所 | 高周波モジュールおよび通信装置 |
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KR100753499B1 (ko) | 2007-08-31 |
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