JP5192865B2 - 部品内蔵配線基板の製造方法 - Google Patents
部品内蔵配線基板の製造方法 Download PDFInfo
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- JP5192865B2 JP5192865B2 JP2008072681A JP2008072681A JP5192865B2 JP 5192865 B2 JP5192865 B2 JP 5192865B2 JP 2008072681 A JP2008072681 A JP 2008072681A JP 2008072681 A JP2008072681 A JP 2008072681A JP 5192865 B2 JP5192865 B2 JP 5192865B2
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- wiring board
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- 239000011347 resin Substances 0.000 claims description 415
- 239000010410 layer Substances 0.000 claims description 294
- 239000003990 capacitor Substances 0.000 claims description 107
- 239000011229 interlayer Substances 0.000 claims description 101
- 239000004020 conductor Substances 0.000 claims description 85
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 21
- 239000010949 copper Substances 0.000 description 19
- 229920001187 thermosetting polymer Polymers 0.000 description 19
- 229910052802 copper Inorganic materials 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 229910000679 solder Inorganic materials 0.000 description 15
- 230000002093 peripheral effect Effects 0.000 description 14
- 239000002861 polymer material Substances 0.000 description 14
- 238000007747 plating Methods 0.000 description 13
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- 238000005530 etching Methods 0.000 description 7
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- 229910052759 nickel Inorganic materials 0.000 description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
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- 238000012545 processing Methods 0.000 description 6
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- 239000004743 Polypropylene Substances 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
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- 229920006324 polyoxymethylene Polymers 0.000 description 4
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- 239000000843 powder Substances 0.000 description 4
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- 229920002803 thermoplastic polyurethane Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 239000000805 composite resin Substances 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
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- 230000000149 penetrating effect Effects 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
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- 238000001816 cooling Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
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- 239000011572 manganese Substances 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000002759 woven fabric Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920013636 polyphenyl ether polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
[第2実施形態]
11…コア基板
12…コア主面
13…コア裏面
31…配線積層部としての第1ビルドアップ層
33,35…樹脂層間絶縁層
42…導体層
90…収容穴部
91…収容穴部の内壁面
92…部品固定用樹脂部材としての樹脂リング
101…部品としてのセラミックコンデンサ
102…部品主面としてのコンデンサ主面
103…部品裏面としてのコンデンサ裏面
105…誘電体層としてのセラミック誘電体層
106…部品側面としてのコンデンサ側面
111…表層電極としての主面側電源用電極
112…表層電極としての主面側グランド用電極
121…表層電極としての裏面側電源用電極
122…表層電極としての裏面側グランド用電極
131…コンデンサ内ビア導体としての電源用コンデンサ内ビア導体
132…コンデンサ内ビア導体としてのグランド用コンデンサ内ビア導体
141…内部電極層としての電源用内部電極層
142…内部電極層としてのグランド用内部電極層
151…部品固定用樹脂層
171…粘着テープ
211…部品としてのICチップ
215…部品主面としてのチップ主面
216…部品裏面としてのチップ裏面
217…部品側面としてのチップ側面
219…部品固定用樹脂部材としての樹脂リング
Claims (7)
- コア主面及びコア裏面を有し、少なくとも前記コア主面にて開口する収容穴部を有するコア基板と、部品主面、部品裏面及び部品側面を有し、前記コア主面と前記部品主面とを同じ側に向けた状態で、前記収容穴部内に収容可能な部品と、前記部品を固定するための部品固定用樹脂部材とを準備する準備工程と、
前記準備工程後、前記収容穴部内に前記部品を収容するとともに、前記部品固定用樹脂部材を前記収容穴部の内壁面と前記部品側面との隙間に配置する収容工程と、
前記収容工程後、前記部品固定用樹脂部材及び樹脂充填剤の少なくとも一方によって前記隙間を埋めた状態で、前記部品固定用樹脂部材及び前記樹脂充填剤の少なくとも一方を硬化させた前記部品を固定する固定工程と
を含み、
前記部品固定用樹脂部材は、前記部品を前記部品側面側から包囲する環状樹脂部材である
ことを特徴とする部品内蔵配線基板の製造方法。 - 前記収容工程では、前記コア基板の収容穴部内に前記部品を収容した後、前記収容穴部の内壁面と前記部品側面との隙間に前記部品固定用樹脂部材を配置することを特徴とする請求項1に記載の部品内蔵配線基板の製造方法。
- 前記固定工程の実行前の段階において、前記部品固定用樹脂部材は、半硬化状態であることを特徴とする請求項1または2に記載の部品内蔵配線基板の製造方法。
- 前記収容工程は、前記コア主面及び前記コア裏面の両方にて開口する前記収容穴部の前記コア裏面側開口を粘着面を有する粘着テープで塞いだ状態で行われ、
前記固定工程後に粘着テープを除去する
ことを特徴とする請求項1乃至3のいずれか1項に記載の部品内蔵配線基板の製造方法。 - 前記部品内蔵配線基板は、樹脂層間絶縁層及び導体層を前記コア主面及び前記部品主面上にて積層した構造を有する配線積層部を備えており、
前記固定工程では、前記コア主面に接する樹脂層間絶縁層を硬化させると同時に、前記部品固定用樹脂部材を硬化させ、前記部品を固定する
ことを特徴とする請求項1乃至4のいずれか1項に記載の部品内蔵配線基板の製造方法。 - 前記部品内蔵配線基板は、樹脂層間絶縁層及び導体層を前記コア主面及び前記部品主面上にて積層した構造を有する配線積層部を備えており、
前記部品固定用樹脂部材は、前記樹脂層間絶縁層と同じ材料によって形成されている
ことを特徴とする請求項1乃至5のいずれか1項に記載の部品内蔵配線基板の製造方法。 - 前記部品は、
誘電体層を介して複数の内部電極層が積層配置された構造を有し、
前記複数の内部電極層に接続される複数のコンデンサ内ビア導体と、
前記複数のコンデンサ内ビア導体における少なくとも前記部品主面側の端部に接続された複数の表層電極と
を備え、前記複数のコンデンサ内ビア導体が全体としてアレイ状に配置されたビアアレイタイプのコンデンサである
ことを特徴とする請求項1乃至6のいずれか1項に記載の部品内蔵配線基板の製造方法。
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JP5192865B2 true JP5192865B2 (ja) | 2013-05-08 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP5754333B2 (ja) * | 2011-09-30 | 2015-07-29 | イビデン株式会社 | 多層プリント配線板及び多層プリント配線板の製造方法 |
CN104106134B (zh) * | 2011-12-08 | 2016-12-14 | 日本碍子株式会社 | 大容量模块用基板以及该基板的制造方法 |
KR101976571B1 (ko) * | 2012-07-27 | 2019-08-28 | 엘지이노텍 주식회사 | 인쇄회로기판 및 이의 제조 방법 |
JP5757375B2 (ja) | 2013-05-17 | 2015-07-29 | 株式会社村田製作所 | 部品内蔵多層基板の製造方法および部品内蔵多層基板 |
CN106207383A (zh) * | 2015-05-06 | 2016-12-07 | 佳邦科技股份有限公司 | 通信模组 |
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JPS52145766A (en) * | 1976-05-31 | 1977-12-05 | Suwa Seikosha Kk | Electric circuit |
JP3878663B2 (ja) * | 1999-06-18 | 2007-02-07 | 日本特殊陶業株式会社 | 配線基板の製造方法及び配線基板 |
JP4315580B2 (ja) * | 2000-07-21 | 2009-08-19 | イビデン株式会社 | プリント配線板及びプリント配線板の製造方法 |
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