JPS59171157A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59171157A
JPS59171157A JP58044179A JP4417983A JPS59171157A JP S59171157 A JPS59171157 A JP S59171157A JP 58044179 A JP58044179 A JP 58044179A JP 4417983 A JP4417983 A JP 4417983A JP S59171157 A JPS59171157 A JP S59171157A
Authority
JP
Japan
Prior art keywords
layer
electrode
semiconductor device
semiconductor
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58044179A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0558266B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Taijo Nishioka
西岡　泰城
Noriyuki Honma
本間　紀之
Noriyuki Sakuma
憲之 佐久間
Kiichiro Mukai
向　喜一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58044179A priority Critical patent/JPS59171157A/ja
Priority to KR1019840001232A priority patent/KR910002813B1/ko
Priority to EP84102739A priority patent/EP0122459A3/en
Priority to US06/590,870 priority patent/US4636833A/en
Publication of JPS59171157A publication Critical patent/JPS59171157A/ja
Publication of JPH0558266B2 publication Critical patent/JPH0558266B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP58044179A 1983-03-18 1983-03-18 半導体装置 Granted JPS59171157A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58044179A JPS59171157A (ja) 1983-03-18 1983-03-18 半導体装置
KR1019840001232A KR910002813B1 (ko) 1983-03-18 1984-03-12 반도체 장치
EP84102739A EP0122459A3 (en) 1983-03-18 1984-03-13 Semiconductor device comprising a diode and a capacitor
US06/590,870 US4636833A (en) 1983-03-18 1984-03-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58044179A JPS59171157A (ja) 1983-03-18 1983-03-18 半導体装置

Publications (2)

Publication Number Publication Date
JPS59171157A true JPS59171157A (ja) 1984-09-27
JPH0558266B2 JPH0558266B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-26

Family

ID=12684348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58044179A Granted JPS59171157A (ja) 1983-03-18 1983-03-18 半導体装置

Country Status (4)

Country Link
US (1) US4636833A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0122459A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS59171157A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR910002813B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4809052A (en) * 1985-05-10 1989-02-28 Hitachi, Ltd. Semiconductor memory device

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2617457B2 (ja) * 1985-11-29 1997-06-04 株式会社日立製作所 半導体装置およびその製造方法
JPS6379373A (ja) * 1986-09-24 1988-04-09 Hitachi Ltd 半導体装置およびその製造方法
US4803363A (en) * 1987-04-27 1989-02-07 Hughes Aircraft Company Infrared detector with integral feedback capacitance
US5189503A (en) * 1988-03-04 1993-02-23 Kabushiki Kaisha Toshiba High dielectric capacitor having low current leakage
JPH0817229B2 (ja) * 1988-03-31 1996-02-21 サンケン電気株式会社 半導体装置
US5025304A (en) * 1988-11-29 1991-06-18 Mcnc High density semiconductor structure and method of making the same
US5168078A (en) * 1988-11-29 1992-12-01 Mcnc Method of making high density semiconductor structure
JPH0677402A (ja) * 1992-07-02 1994-03-18 Natl Semiconductor Corp <Ns> 半導体デバイス用誘電体構造及びその製造方法
US5569487A (en) * 1995-01-23 1996-10-29 General Electric Company Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon
JP2630292B2 (ja) * 1995-02-27 1997-07-16 日本電気株式会社 半導体装置の製造方法
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US6218260B1 (en) 1997-04-22 2001-04-17 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
JPH1154706A (ja) * 1997-08-06 1999-02-26 Nec Corp Ｍｉｍキャパシタ及びその製造方法
US6303969B1 (en) 1998-05-01 2001-10-16 Allen Tan Schottky diode with dielectric trench
KR100363083B1 (ko) 1999-01-20 2002-11-30 삼성전자 주식회사 반구형 그레인 커패시터 및 그 형성방법
KR100317042B1 (ko) 1999-03-18 2001-12-22 윤종용 반구형 알갱이 실리콘을 가지는 실린더형 커패시터 및 그 제조방법
JP2003101036A (ja) * 2001-09-25 2003-04-04 Sanyo Electric Co Ltd ショットキーバリアダイオードおよびその製造方法
KR20020043815A (ko) 2000-12-04 2002-06-12 윤종용 반구형 그레인 커패시터의 제조방법
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
KR100552704B1 (ko) * 2003-12-17 2006-02-20 삼성전자주식회사 반도체 장치의 불휘발성 커패시터, 이를 포함하는 반도체메모리 소자 및 그 동작방법
US8513634B2 (en) * 2003-12-17 2013-08-20 Samsung Electronics Co., Ltd. Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7592251B2 (en) * 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864062A (ja) * 1981-10-13 1983-04-16 Nec Corp 半導体記憶装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
DE2508553C3 (de) * 1975-02-27 1981-06-25 Siemens AG, 1000 Berlin und 8000 München Integrierte Halbleiterschaltungsanordnung
JPS5325383A (en) * 1976-08-23 1978-03-09 Hitachi Ltd Compound type capacitor in bipolar ic
JPS6058593B2 (ja) * 1976-10-01 1985-12-20 株式会社日立製作所 半導体メモリ
US4112314A (en) * 1977-08-26 1978-09-05 International Business Machines Corporation Logical current switch
US4211941A (en) * 1978-08-03 1980-07-08 Rca Corporation Integrated circuitry including low-leakage capacitance
US4245231A (en) * 1978-12-26 1981-01-13 Motorola Inc. Combination capacitor and transistor structure for use in monolithic circuits
JPS5685848A (en) * 1979-12-15 1981-07-13 Toshiba Corp Manufacture of bipolar integrated circuit
JPS5788774A (en) * 1980-11-25 1982-06-02 Hitachi Ltd Semiconductor device
JPS57206062A (en) * 1981-06-12 1982-12-17 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS5823470A (ja) * 1981-08-06 1983-02-12 Oki Electric Ind Co Ltd 半導体装置
JPS58127359A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体接合容量装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864062A (ja) * 1981-10-13 1983-04-16 Nec Corp 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4809052A (en) * 1985-05-10 1989-02-28 Hitachi, Ltd. Semiconductor memory device

Also Published As

Publication number Publication date
KR910002813B1 (ko) 1991-05-04
KR840008217A (ko) 1984-12-13
US4636833A (en) 1987-01-13
EP0122459A2 (en) 1984-10-24
EP0122459A3 (en) 1986-02-05
JPH0558266B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-26

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