KR910002813B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR910002813B1
KR910002813B1 KR1019840001232A KR840001232A KR910002813B1 KR 910002813 B1 KR910002813 B1 KR 910002813B1 KR 1019840001232 A KR1019840001232 A KR 1019840001232A KR 840001232 A KR840001232 A KR 840001232A KR 910002813 B1 KR910002813 B1 KR 910002813B1
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KR
South Korea
Prior art keywords
electrode
silicide
semiconductor device
film
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019840001232A
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English (en)
Korean (ko)
Other versions
KR840008217A (ko
Inventor
야스히로 니시오가
노리유기 혼마
노리유기 사구마
기이지로우 무가이
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
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Publication date
Application filed by 가부시기가이샤 히다찌세이사꾸쇼, 미쓰다 가쓰시게 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR840008217A publication Critical patent/KR840008217A/ko
Application granted granted Critical
Publication of KR910002813B1 publication Critical patent/KR910002813B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

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  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
KR1019840001232A 1983-03-18 1984-03-12 반도체 장치 Expired KR910002813B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP44179 1983-03-18
JP58-044179 1983-03-18
JP58044179A JPS59171157A (ja) 1983-03-18 1983-03-18 半導体装置

Publications (2)

Publication Number Publication Date
KR840008217A KR840008217A (ko) 1984-12-13
KR910002813B1 true KR910002813B1 (ko) 1991-05-04

Family

ID=12684348

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840001232A Expired KR910002813B1 (ko) 1983-03-18 1984-03-12 반도체 장치

Country Status (4)

Country Link
US (1) US4636833A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0122459A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS59171157A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR910002813B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4809052A (en) * 1985-05-10 1989-02-28 Hitachi, Ltd. Semiconductor memory device
JP2617457B2 (ja) * 1985-11-29 1997-06-04 株式会社日立製作所 半導体装置およびその製造方法
JPS6379373A (ja) * 1986-09-24 1988-04-09 Hitachi Ltd 半導体装置およびその製造方法
US4803363A (en) * 1987-04-27 1989-02-07 Hughes Aircraft Company Infrared detector with integral feedback capacitance
US5189503A (en) * 1988-03-04 1993-02-23 Kabushiki Kaisha Toshiba High dielectric capacitor having low current leakage
JPH0817229B2 (ja) * 1988-03-31 1996-02-21 サンケン電気株式会社 半導体装置
US5168078A (en) * 1988-11-29 1992-12-01 Mcnc Method of making high density semiconductor structure
US5025304A (en) * 1988-11-29 1991-06-18 Mcnc High density semiconductor structure and method of making the same
JPH0677402A (ja) * 1992-07-02 1994-03-18 Natl Semiconductor Corp <Ns> 半導体デバイス用誘電体構造及びその製造方法
US5569487A (en) * 1995-01-23 1996-10-29 General Electric Company Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon
JP2630292B2 (ja) * 1995-02-27 1997-07-16 日本電気株式会社 半導体装置の製造方法
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US6218260B1 (en) * 1997-04-22 2001-04-17 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
JPH1154706A (ja) * 1997-08-06 1999-02-26 Nec Corp Ｍｉｍキャパシタ及びその製造方法
US6303969B1 (en) * 1998-05-01 2001-10-16 Allen Tan Schottky diode with dielectric trench
KR100363083B1 (ko) 1999-01-20 2002-11-30 삼성전자 주식회사 반구형 그레인 커패시터 및 그 형성방법
KR100317042B1 (ko) 1999-03-18 2001-12-22 윤종용 반구형 알갱이 실리콘을 가지는 실린더형 커패시터 및 그 제조방법
JP2003101036A (ja) * 2001-09-25 2003-04-04 Sanyo Electric Co Ltd ショットキーバリアダイオードおよびその製造方法
KR20020043815A (ko) 2000-12-04 2002-06-12 윤종용 반구형 그레인 커패시터의 제조방법
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US8513634B2 (en) * 2003-12-17 2013-08-20 Samsung Electronics Co., Ltd. Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same
KR100552704B1 (ko) * 2003-12-17 2006-02-20 삼성전자주식회사 반도체 장치의 불휘발성 커패시터, 이를 포함하는 반도체메모리 소자 및 그 동작방법
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
DE2508553C3 (de) * 1975-02-27 1981-06-25 Siemens AG, 1000 Berlin und 8000 München Integrierte Halbleiterschaltungsanordnung
JPS5325383A (en) * 1976-08-23 1978-03-09 Hitachi Ltd Compound type capacitor in bipolar ic
JPS6058593B2 (ja) * 1976-10-01 1985-12-20 株式会社日立製作所 半導体メモリ
US4112314A (en) * 1977-08-26 1978-09-05 International Business Machines Corporation Logical current switch
US4211941A (en) * 1978-08-03 1980-07-08 Rca Corporation Integrated circuitry including low-leakage capacitance
US4245231A (en) * 1978-12-26 1981-01-13 Motorola Inc. Combination capacitor and transistor structure for use in monolithic circuits
JPS5685848A (en) * 1979-12-15 1981-07-13 Toshiba Corp Manufacture of bipolar integrated circuit
JPS5788774A (en) * 1980-11-25 1982-06-02 Hitachi Ltd Semiconductor device
JPS57206062A (en) * 1981-06-12 1982-12-17 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS5823470A (ja) * 1981-08-06 1983-02-12 Oki Electric Ind Co Ltd 半導体装置
JPS5864062A (ja) * 1981-10-13 1983-04-16 Nec Corp 半導体記憶装置
JPS58127359A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体接合容量装置

Also Published As

Publication number Publication date
JPS59171157A (ja) 1984-09-27
EP0122459A2 (en) 1984-10-24
KR840008217A (ko) 1984-12-13
JPH0558266B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-26
EP0122459A3 (en) 1986-02-05
US4636833A (en) 1987-01-13

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