KR840008217A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR840008217A
KR840008217A KR1019840001232A KR840001232A KR840008217A KR 840008217 A KR840008217 A KR 840008217A KR 1019840001232 A KR1019840001232 A KR 1019840001232A KR 840001232 A KR840001232 A KR 840001232A KR 840008217 A KR840008217 A KR 840008217A
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KR
South Korea
Prior art keywords
silicide
electrode
film
metal
dielectric film
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KR1019840001232A
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English (en)
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KR910002813B1 (ko
Inventor
야스히로 니시오가 (외 3)
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
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Publication of KR840008217A publication Critical patent/KR840008217A/ko
Application granted granted Critical
Publication of KR910002813B1 publication Critical patent/KR910002813B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 반도체 장치의 등가(等價)회로를 도시한 도면.
제2도 A, 제2도 B 및 제2도 C는 각각 본 발명의 실시예를 도시한 단면도, 평면도 및 등가 회로도이다.

Claims (15)

  1. 반도체 기판위에 적층해서 형성된 2제의 전극, 유전체막 및 제1의 전극을 적어도 갖추고, 상기 반도체 기판과 상기 제2의 전극에 의해서 형성된 다이오우드 위에 상기 제2의 전극, 상기 유전체막 및 상기 제1의 전극에 의해서 형성된 캐파시터가 적층되어 있는 반도체 장치.
  2. 특허청구의 범위 제1항에 있어서, 상기 제2의 전극은 금속 혹은 금속 실리사이드의 단층 혹은 적층막이다.
  3. 특허청구의 범위 제2항에 있어서, 상기 금속은 A1,W,Mo,Ta,Ti 혹은 Ti-W 합금으로 된는 군(群)에서 선택된다.
  4. 특허청구의 범위 제2항에 있어서, 상기 금속실리사이드는, 파라즘실리사이드, 백금실리사이드, 탄탈륨실리사이드, 텅크스텔실리사이드, 몰리브텔실리사이드, 타타늄실리사이드 및 하프늄실리사이드으로되는 군에서 선택되는 적어도 1종이다.
  5. 특허청구의 범위 제3항에 있어서, A1으로 되는 상기 제2의 전극과, 상기 유전체막의 사이에 다른 금속막이 끼워져 있다.
  6. 특허청구의 범위 제1항에 있어서, 상기 유전체 막은 산화탄탈륨, 산화니오븀, 산화티타늄, 산화하프늄, 산화알미늄, 2산화실리콘 및 질화 실리콘으로된 군에서 선택된 적어도 1종으로 되는막의 단층 혹은 적층막이다.
  7. 특허청구의 범위 제1항에 있어서, 상기 유전체 막은 상기 제2의 전극의 표면을 산화해서 형성된 막이다.
  8. 특허청구의 범위 제7항에 있어서, 상기 유전체 막은 금속 실리사이드의 산화막이다.
  9. 특허청구의 범위 제2항에 있어서, 상기 제2의 전극은 금속 실리사이드 막이며, 상기 유전체막은 천이 금속의 산화물의 막이다.
  10. 특허청구의 범위 제9항에 있어서, 상기 금속 실리사이드는 백금 실리사이드, 파라즘실리사이드, 탄탈륨실리사이드, 텅크스실리사이드, 몰리브텐실리사이드, 티타늄실리사이드 및 하프늄 실리사이드 등으로 되는 군에서 선택된 적어도 1종이다.
  11. 특허청구 범위 제9항에 있어서, 상기 제2의 전극과 상기 유전체 막의 사이에는, 다른 금속막이 끼워져 있다.
  12. 특허청구의 범위 제11항에 있어서, 상기 금속막은 탄탈륨, 나오븀, 티타늄, 하프늄 및 지르코늄으로 되는 군에서 선택된다.
  13. 특허청구의 범위 제1항에 있어서, 상기 반도체기판 내에는 상기 반도체 기판 표면에서 소정의 거리를 가진 위치에 제3의 전극이 형성되어 있다.
  14. 특허청구의 범위 제13항에 있어서, 상기 제3의 전극은 다량의 불순물을 도포(塗布)한 낮은 저항의 매입층이다.
  15. 특허청구의 범위 제13항에 있어서, 상기 제3의 전극은 상기 반도체 기판내에 형성된 낮은 저항 영역을 거쳐서 상기 제1의 전극과 전기적으로 접속되어 있다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840001232A 1983-03-18 1984-03-12 반도체 장치 KR910002813B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58044179A JPS59171157A (ja) 1983-03-18 1983-03-18 半導体装置
JP58-044179 1983-03-18
JP44179 1983-03-18

Publications (2)

Publication Number Publication Date
KR840008217A true KR840008217A (ko) 1984-12-13
KR910002813B1 KR910002813B1 (ko) 1991-05-04

Family

ID=12684348

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840001232A KR910002813B1 (ko) 1983-03-18 1984-03-12 반도체 장치

Country Status (4)

Country Link
US (1) US4636833A (ko)
EP (1) EP0122459A3 (ko)
JP (1) JPS59171157A (ko)
KR (1) KR910002813B1 (ko)

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JP2617457B2 (ja) * 1985-11-29 1997-06-04 株式会社日立製作所 半導体装置およびその製造方法
JPS6379373A (ja) * 1986-09-24 1988-04-09 Hitachi Ltd 半導体装置およびその製造方法
US4803363A (en) * 1987-04-27 1989-02-07 Hughes Aircraft Company Infrared detector with integral feedback capacitance
US5189503A (en) * 1988-03-04 1993-02-23 Kabushiki Kaisha Toshiba High dielectric capacitor having low current leakage
JPH0817229B2 (ja) * 1988-03-31 1996-02-21 サンケン電気株式会社 半導体装置
US5168078A (en) * 1988-11-29 1992-12-01 Mcnc Method of making high density semiconductor structure
US5025304A (en) * 1988-11-29 1991-06-18 Mcnc High density semiconductor structure and method of making the same
JPH0677402A (ja) * 1992-07-02 1994-03-18 Natl Semiconductor Corp <Ns> 半導体デバイス用誘電体構造及びその製造方法
US5569487A (en) * 1995-01-23 1996-10-29 General Electric Company Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon
JP2630292B2 (ja) * 1995-02-27 1997-07-16 日本電気株式会社 半導体装置の製造方法
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US6218260B1 (en) 1997-04-22 2001-04-17 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
JPH1154706A (ja) * 1997-08-06 1999-02-26 Nec Corp Ｍｉｍキャパシタ及びその製造方法
US6303969B1 (en) 1998-05-01 2001-10-16 Allen Tan Schottky diode with dielectric trench
KR100363083B1 (ko) 1999-01-20 2002-11-30 삼성전자 주식회사 반구형 그레인 커패시터 및 그 형성방법
KR100317042B1 (ko) 1999-03-18 2001-12-22 윤종용 반구형 알갱이 실리콘을 가지는 실린더형 커패시터 및 그 제조방법
JP2003101036A (ja) * 2001-09-25 2003-04-04 Sanyo Electric Co Ltd ショットキーバリアダイオードおよびその製造方法
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US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
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US8513634B2 (en) * 2003-12-17 2013-08-20 Samsung Electronics Co., Ltd. Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same
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JPS58127359A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体接合容量装置

Also Published As

Publication number Publication date
JPH0558266B2 (ko) 1993-08-26
EP0122459A2 (en) 1984-10-24
JPS59171157A (ja) 1984-09-27
EP0122459A3 (en) 1986-02-05
US4636833A (en) 1987-01-13
KR910002813B1 (ko) 1991-05-04

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