JPH09213100A5 - - Google Patents

Info

Publication number
JPH09213100A5
JPH09213100A5 JP1996235053A JP23505396A JPH09213100A5 JP H09213100 A5 JPH09213100 A5 JP H09213100A5 JP 1996235053 A JP1996235053 A JP 1996235053A JP 23505396 A JP23505396 A JP 23505396A JP H09213100 A5 JPH09213100 A5 JP H09213100A5
Authority
JP
Japan
Prior art keywords
normal
memory cells
spare
memory cell
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996235053A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09213100A (ja
JP3865828B2 (ja
Filing date
Publication date
Priority claimed from JP23505396A external-priority patent/JP3865828B2/ja
Priority to JP23505396A priority Critical patent/JP3865828B2/ja
Application filed filed Critical
Priority to KR1019960055343A priority patent/KR100227058B1/ko
Priority to US08/752,419 priority patent/US5764576A/en
Publication of JPH09213100A publication Critical patent/JPH09213100A/ja
Priority to US09/058,885 priority patent/US5999464A/en
Priority to US09/385,582 priority patent/US6301163B1/en
Priority to US09/912,518 priority patent/US6400621B2/en
Publication of JPH09213100A5 publication Critical patent/JPH09213100A5/ja
Publication of JP3865828B2 publication Critical patent/JP3865828B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP23505396A 1995-11-28 1996-09-05 半導体記憶装置 Expired - Fee Related JP3865828B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP23505396A JP3865828B2 (ja) 1995-11-28 1996-09-05 半導体記憶装置
KR1019960055343A KR100227058B1 (ko) 1995-11-28 1996-11-19 반도체 기억장치 및 그 결함 검사방법
US08/752,419 US5764576A (en) 1995-11-28 1996-11-19 Semiconductor memory device and method of checking same for defect
US09/058,885 US5999464A (en) 1995-11-28 1998-04-13 Semiconductor memory device and method of checking same for defect
US09/385,582 US6301163B1 (en) 1995-11-28 1999-08-27 Semiconductor memory device and method of checking same for defect
US09/912,518 US6400621B2 (en) 1995-11-28 2001-07-26 Semiconductor memory device and method of checking same for defect

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7-309609 1995-11-28
JP30960995 1995-11-28
JP23505396A JP3865828B2 (ja) 1995-11-28 1996-09-05 半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH09213100A JPH09213100A (ja) 1997-08-15
JPH09213100A5 true JPH09213100A5 (enExample) 2004-09-09
JP3865828B2 JP3865828B2 (ja) 2007-01-10

Family

ID=26531925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23505396A Expired - Fee Related JP3865828B2 (ja) 1995-11-28 1996-09-05 半導体記憶装置

Country Status (3)

Country Link
US (4) US5764576A (enExample)
JP (1) JP3865828B2 (enExample)
KR (1) KR100227058B1 (enExample)

Families Citing this family (53)

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JP3865828B2 (ja) 1995-11-28 2007-01-10 株式会社ルネサステクノロジ 半導体記憶装置
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JP2004328545A (ja) * 2003-04-25 2004-11-18 Sharp Corp デコード回路ならびにそれを用いるディスク記録／再生装置の受光アンプ回路および光学ピックアップ
US7509543B2 (en) * 2003-06-17 2009-03-24 Micron Technology, Inc. Circuit and method for error test, recordation, and repair
JP4424952B2 (ja) * 2003-09-16 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP2005267817A (ja) * 2004-03-22 2005-09-29 Oki Electric Ind Co Ltd 半導体記憶装置と冗長救済アドレスの読出方法
US20050285222A1 (en) 2004-06-29 2005-12-29 Kong-Beng Thei New fuse structure
JP2006107590A (ja) * 2004-10-04 2006-04-20 Nec Electronics Corp 半導体集積回路装置及びそのテスト方法
US7729185B2 (en) * 2007-11-01 2010-06-01 Arm Limited Apparatus and method for detection of address decoder open faults
CN101441587B (zh) * 2007-11-19 2011-05-18 辉达公司 用于自动分析gpu测试结果的方法和系统
US8132131B2 (en) * 2007-12-18 2012-03-06 International Business Machines Corporation Design structure including failing address register and compare logic for multi-pass repair of memory arrays
US20090154270A1 (en) * 2007-12-18 2009-06-18 Barth Jr John E Failing address register and compare logic for multi-pass repair of memory arrays
US7872902B2 (en) * 2008-08-18 2011-01-18 Qimonda Ag Integrated circuit with bit lines positioned in different planes
US8316175B2 (en) 2009-11-03 2012-11-20 Inphi Corporation High throughput flash memory system
US9170878B2 (en) 2011-04-11 2015-10-27 Inphi Corporation Memory buffer with data scrambling and error correction
US8472265B2 (en) * 2011-05-10 2013-06-25 Elite Semiconductor Memory Technology Inc. Repairing circuit for memory circuit and method thereof and memory circuit using the same
JP5737003B2 (ja) * 2011-06-27 2015-06-17 富士通セミコンダクター株式会社 半導体メモリ、システムおよび半導体メモリの製造方法
US8902638B2 (en) * 2011-09-16 2014-12-02 Inphi Corporation Replacement of a faulty memory cell with a spare cell for a memory circuit
US9158726B2 (en) 2011-12-16 2015-10-13 Inphi Corporation Self terminated dynamic random access memory
US8949473B1 (en) 2012-02-16 2015-02-03 Inphi Corporation Hybrid memory blade
US9069717B1 (en) 2012-03-06 2015-06-30 Inphi Corporation Memory parametric improvements
US8861277B1 (en) 2012-06-26 2014-10-14 Inphi Corporation Method of using non-volatile memories for on-DIMM memory address list storage
US9647799B2 (en) 2012-10-16 2017-05-09 Inphi Corporation FEC coding identification
US10185499B1 (en) 2014-01-07 2019-01-22 Rambus Inc. Near-memory compute module
US9553670B2 (en) 2014-03-03 2017-01-24 Inphi Corporation Optical module
US9874800B2 (en) 2014-08-28 2018-01-23 Inphi Corporation MZM linear driver for silicon photonics device characterized as two-channel wavelength combiner and locker
KR20160031631A (ko) * 2014-09-12 2016-03-23 삼성전자주식회사 반도체 메모리 장치의 리던던시 영역 테스트 방법
US9325419B1 (en) 2014-11-07 2016-04-26 Inphi Corporation Wavelength control of two-channel DEMUX/MUX in silicon photonics
US9473090B2 (en) 2014-11-21 2016-10-18 Inphi Corporation Trans-impedance amplifier with replica gain control
US9553689B2 (en) 2014-12-12 2017-01-24 Inphi Corporation Temperature insensitive DEMUX/MUX in silicon photonics
US9461677B1 (en) 2015-01-08 2016-10-04 Inphi Corporation Local phase correction
US9484960B1 (en) 2015-01-21 2016-11-01 Inphi Corporation Reconfigurable FEC
US9547129B1 (en) 2015-01-21 2017-01-17 Inphi Corporation Fiber coupler for silicon photonics
US9548726B1 (en) 2015-02-13 2017-01-17 Inphi Corporation Slew-rate control and waveshape adjusted drivers for improving signal integrity on multi-loads transmission line interconnects
US9632390B1 (en) 2015-03-06 2017-04-25 Inphi Corporation Balanced Mach-Zehnder modulator
US9847839B2 (en) 2016-03-04 2017-12-19 Inphi Corporation PAM4 transceivers for high-speed communication
KR102650154B1 (ko) * 2016-12-08 2024-03-22 삼성전자주식회사 가상 페일 생성기를 포함하는 메모리 장치 및 그것의 메모리 셀 리페어 방법
KR102096668B1 (ko) 2019-12-24 2020-04-03 (주)코리아시스템 발광 디바이스
US11880607B2 (en) * 2020-12-02 2024-01-23 Mediatek Singapore Pte. Ltd. Memory with fuse pins shared by multiple-type repairs

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