KR100227058B1 - 반도체 기억장치 및 그 결함 검사방법 - Google Patents

반도체 기억장치 및 그 결함 검사방법 Download PDF

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Publication number
KR100227058B1
KR100227058B1 KR1019960055343A KR19960055343A KR100227058B1 KR 100227058 B1 KR100227058 B1 KR 100227058B1 KR 1019960055343 A KR1019960055343 A KR 1019960055343A KR 19960055343 A KR19960055343 A KR 19960055343A KR 100227058 B1 KR100227058 B1 KR 100227058B1
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South Korea
Prior art keywords
memory cell
spare
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normal
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Expired - Fee Related
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KR1019960055343A
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English (en)
Korean (ko)
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KR970030588A (ko
Inventor
히데토 히다카
미키오 아사쿠라
키요히로 후루타니
테츠오 카토
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Publication of KR970030588A publication Critical patent/KR970030588A/ko
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Publication of KR100227058B1 publication Critical patent/KR100227058B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • H10P74/00—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/802—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by encoding redundancy signals

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1019960055343A 1995-11-28 1996-11-19 반도체 기억장치 및 그 결함 검사방법 Expired - Fee Related KR100227058B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP95-309609 1995-11-28
JP30960995 1995-11-28
JP96-235053 1996-09-05
JP23505396A JP3865828B2 (ja) 1995-11-28 1996-09-05 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR970030588A KR970030588A (ko) 1997-06-26
KR100227058B1 true KR100227058B1 (ko) 1999-10-15

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KR1019960055343A Expired - Fee Related KR100227058B1 (ko) 1995-11-28 1996-11-19 반도체 기억장치 및 그 결함 검사방법

Country Status (3)

Country Link
US (4) US5764576A (enExample)
JP (1) JP3865828B2 (enExample)
KR (1) KR100227058B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102096668B1 (ko) 2019-12-24 2020-04-03 (주)코리아시스템 발광 디바이스

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KR20160031631A (ko) * 2014-09-12 2016-03-23 삼성전자주식회사 반도체 메모리 장치의 리던던시 영역 테스트 방법
US9325419B1 (en) 2014-11-07 2016-04-26 Inphi Corporation Wavelength control of two-channel DEMUX/MUX in silicon photonics
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US9553689B2 (en) 2014-12-12 2017-01-24 Inphi Corporation Temperature insensitive DEMUX/MUX in silicon photonics
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Publication number Priority date Publication date Assignee Title
KR102096668B1 (ko) 2019-12-24 2020-04-03 (주)코리아시스템 발광 디바이스

Also Published As

Publication number Publication date
JPH09213100A (ja) 1997-08-15
US6400621B2 (en) 2002-06-04
US20020006064A1 (en) 2002-01-17
JP3865828B2 (ja) 2007-01-10
US6301163B1 (en) 2001-10-09
US5764576A (en) 1998-06-09
US5999464A (en) 1999-12-07
KR970030588A (ko) 1997-06-26

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