JPH07321323A - 薄膜トランジスタおよびその製造方法 - Google Patents

薄膜トランジスタおよびその製造方法

Info

Publication number
JPH07321323A
JPH07321323A JP6109233A JP10923394A JPH07321323A JP H07321323 A JPH07321323 A JP H07321323A JP 6109233 A JP6109233 A JP 6109233A JP 10923394 A JP10923394 A JP 10923394A JP H07321323 A JPH07321323 A JP H07321323A
Authority
JP
Japan
Prior art keywords
semiconductor layer
germanium
thin film
film transistor
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6109233A
Other languages
English (en)
Japanese (ja)
Inventor
Hiroshi Tsutsu
博司 筒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6109233A priority Critical patent/JPH07321323A/ja
Priority to EP99107808A priority patent/EP0935292A3/en
Priority to TW084105146A priority patent/TW288196B/zh
Priority to EP95107868A priority patent/EP0684650B1/en
Priority to DE69522370T priority patent/DE69522370T2/de
Priority to KR1019950012967A priority patent/KR100191091B1/ko
Priority to US08/449,495 priority patent/US6118151A/en
Publication of JPH07321323A publication Critical patent/JPH07321323A/ja
Priority to US09/359,207 priority patent/US6228692B1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01314—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of Ge, C or of compounds of Si, Ge or C contacting the insulator

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP6109233A 1994-05-24 1994-05-24 薄膜トランジスタおよびその製造方法 Pending JPH07321323A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP6109233A JPH07321323A (ja) 1994-05-24 1994-05-24 薄膜トランジスタおよびその製造方法
EP99107808A EP0935292A3 (en) 1994-05-24 1995-05-23 Method of manufacturing a MOSFET
TW084105146A TW288196B (https=) 1994-05-24 1995-05-23
EP95107868A EP0684650B1 (en) 1994-05-24 1995-05-23 SiGe thin film semiconductor device with SiGe layer structure and method of fabrication
DE69522370T DE69522370T2 (de) 1994-05-24 1995-05-23 SiGe-Dünnfilm-Halbleiteranordnung mit SiGe Schichtstruktur und Verfahren zur Herstellung
KR1019950012967A KR100191091B1 (ko) 1994-05-24 1995-05-24 박막 반도체 장치와 그 제조방법
US08/449,495 US6118151A (en) 1994-05-24 1995-05-24 Thin film semiconductor device, method for fabricating the same and semiconductor device
US09/359,207 US6228692B1 (en) 1994-05-24 1999-07-22 Thin film semiconductor device, method for fabricating the same and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6109233A JPH07321323A (ja) 1994-05-24 1994-05-24 薄膜トランジスタおよびその製造方法

Publications (1)

Publication Number Publication Date
JPH07321323A true JPH07321323A (ja) 1995-12-08

Family

ID=14504996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6109233A Pending JPH07321323A (ja) 1994-05-24 1994-05-24 薄膜トランジスタおよびその製造方法

Country Status (6)

Country Link
US (2) US6118151A (https=)
EP (2) EP0935292A3 (https=)
JP (1) JPH07321323A (https=)
KR (1) KR100191091B1 (https=)
DE (1) DE69522370T2 (https=)
TW (1) TW288196B (https=)

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Publication number Priority date Publication date Assignee Title
US7851277B2 (en) 2006-12-05 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same

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JP3917205B2 (ja) * 1995-11-30 2007-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5879996A (en) * 1996-09-18 1999-03-09 Micron Technology, Inc. Silicon-germanium devices for CMOS formed by ion implantation and solid phase epitaxial regrowth
JPH1140498A (ja) * 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6121126A (en) * 1998-02-25 2000-09-19 Micron Technologies, Inc. Methods and structures for metal interconnections in integrated circuits
RU2206643C2 (ru) * 1998-11-26 2003-06-20 Син-Етцу Хандотай Ко., Лтд. Кремнегерманиевый кристалл
US6607948B1 (en) * 1998-12-24 2003-08-19 Kabushiki Kaisha Toshiba Method of manufacturing a substrate using an SiGe layer
JP2000208775A (ja) * 1999-01-18 2000-07-28 Furontekku:Kk 半導体装置とその製造方法
KR100653298B1 (ko) * 1999-03-16 2006-12-04 산요덴키가부시키가이샤 박막 트랜지스터의 제조 방법
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
JP4447128B2 (ja) * 2000-07-12 2010-04-07 富士通マイクロエレクトロニクス株式会社 絶縁ゲート型半導体装置の製造方法
JP4358998B2 (ja) * 2001-02-01 2009-11-04 株式会社日立製作所 薄膜トランジスタ装置およびその製造方法
TW523931B (en) * 2001-02-20 2003-03-11 Hitachi Ltd Thin film transistor and method of manufacturing the same
US6482705B1 (en) * 2001-04-03 2002-11-19 Advanced Micro Devices, Inc. Method of fabricating a semiconductor device having a MOSFET with an amorphous SiGe gate electrode and an elevated crystalline SiGe source/drain structure and a device thereby formed
TW480735B (en) * 2001-04-24 2002-03-21 United Microelectronics Corp Structure and manufacturing method of polysilicon thin film transistor
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
JP2003031495A (ja) * 2001-07-12 2003-01-31 Hitachi Ltd 半導体装置用基板の製造方法および半導体装置の製造方法
US7238557B2 (en) * 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
AU2003202499A1 (en) * 2002-01-09 2003-07-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and its production method
US6805962B2 (en) * 2002-01-23 2004-10-19 International Business Machines Corporation Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications
KR20040020272A (ko) * 2002-08-30 2004-03-09 노성훈 건강 모자
WO2005093807A1 (en) * 2004-03-01 2005-10-06 S.O.I.Tec Silicon On Insulator Technologies Oxidation process of a sige layer and applications thereof
US7737051B2 (en) 2004-03-10 2010-06-15 Tokyo Electron Limited Silicon germanium surface layer for high-k dielectric integration
KR100635567B1 (ko) * 2004-06-29 2006-10-17 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
US20060003485A1 (en) * 2004-06-30 2006-01-05 Hoffman Randy L Devices and methods of making the same
CN102569342B (zh) 2004-12-06 2015-04-22 株式会社半导体能源研究所 显示装置
KR100810638B1 (ko) 2006-12-06 2008-03-07 삼성에스디아이 주식회사 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치
KR100810639B1 (ko) * 2006-12-06 2008-03-07 삼성에스디아이 주식회사 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치
JP5527966B2 (ja) * 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
US7932138B2 (en) * 2007-12-28 2011-04-26 Viatron Technologies Inc. Method for manufacturing thin film transistor
KR101015847B1 (ko) 2008-01-18 2011-02-23 삼성모바일디스플레이주식회사 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치
FR2946457B1 (fr) * 2009-06-05 2012-03-09 St Microelectronics Sa Procede de formation d'un niveau d'un circuit integre par integration tridimensionnelle sequentielle.
KR101147414B1 (ko) * 2009-09-22 2012-05-22 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101926646B1 (ko) 2010-04-16 2018-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치용 전극 및 그 제작 방법
US8598020B2 (en) * 2010-06-25 2013-12-03 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of crystalline germanium
FR2994770A1 (fr) * 2012-08-21 2014-02-28 Commissariat Energie Atomique Electrode composite si-ge et son procede de fabrication
TWI476935B (zh) * 2012-10-03 2015-03-11 Nat Applied Res Laboratories 薄膜電晶體製造方法
CN115458409A (zh) * 2022-08-25 2022-12-09 上海华力集成电路制造有限公司 一种SiGe沟道的形成方法

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JPH01235276A (ja) * 1988-03-15 1989-09-20 Sony Corp 薄膜半導体装置
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7851277B2 (en) 2006-12-05 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
US8283669B2 (en) 2006-12-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same

Also Published As

Publication number Publication date
US6118151A (en) 2000-09-12
DE69522370T2 (de) 2002-04-25
EP0684650A3 (en) 1997-09-10
TW288196B (https=) 1996-10-11
EP0684650A2 (en) 1995-11-29
DE69522370D1 (de) 2001-10-04
KR100191091B1 (ko) 1999-07-01
EP0935292A2 (en) 1999-08-11
EP0684650B1 (en) 2001-08-29
US6228692B1 (en) 2001-05-08
EP0935292A3 (en) 1999-08-18

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