KR100191091B1 - 박막 반도체 장치와 그 제조방법 - Google Patents

박막 반도체 장치와 그 제조방법 Download PDF

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Publication number
KR100191091B1
KR100191091B1 KR1019950012967A KR19950012967A KR100191091B1 KR 100191091 B1 KR100191091 B1 KR 100191091B1 KR 1019950012967 A KR1019950012967 A KR 1019950012967A KR 19950012967 A KR19950012967 A KR 19950012967A KR 100191091 B1 KR100191091 B1 KR 100191091B1
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KR
South Korea
Prior art keywords
semiconductor layer
film
insulating film
semiconductor device
thin film
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Expired - Fee Related
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KR1019950012967A
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English (en)
Korean (ko)
Inventor
쯔쯔히로시
Original Assignee
모리시타 요이치
마쯔시다 덴끼 산교 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01314—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of Ge, C or of compounds of Si, Ge or C contacting the insulator

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
KR1019950012967A 1994-05-24 1995-05-24 박막 반도체 장치와 그 제조방법 Expired - Fee Related KR100191091B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-109233 1994-05-24
JP6109233A JPH07321323A (ja) 1994-05-24 1994-05-24 薄膜トランジスタおよびその製造方法

Publications (1)

Publication Number Publication Date
KR100191091B1 true KR100191091B1 (ko) 1999-07-01

Family

ID=14504996

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950012967A Expired - Fee Related KR100191091B1 (ko) 1994-05-24 1995-05-24 박막 반도체 장치와 그 제조방법

Country Status (6)

Country Link
US (2) US6118151A (https=)
EP (2) EP0935292A3 (https=)
JP (1) JPH07321323A (https=)
KR (1) KR100191091B1 (https=)
DE (1) DE69522370T2 (https=)
TW (1) TW288196B (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040020272A (ko) * 2002-08-30 2004-03-09 노성훈 건강 모자
KR100810639B1 (ko) * 2006-12-06 2008-03-07 삼성에스디아이 주식회사 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치
KR100810638B1 (ko) 2006-12-06 2008-03-07 삼성에스디아이 주식회사 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치
KR101147414B1 (ko) * 2009-09-22 2012-05-22 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
US8673697B2 (en) 2008-01-18 2014-03-18 Samsung Display Co., Ltd. Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same

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JP3917205B2 (ja) * 1995-11-30 2007-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5879996A (en) * 1996-09-18 1999-03-09 Micron Technology, Inc. Silicon-germanium devices for CMOS formed by ion implantation and solid phase epitaxial regrowth
JPH1140498A (ja) * 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6121126A (en) * 1998-02-25 2000-09-19 Micron Technologies, Inc. Methods and structures for metal interconnections in integrated circuits
RU2206643C2 (ru) * 1998-11-26 2003-06-20 Син-Етцу Хандотай Ко., Лтд. Кремнегерманиевый кристалл
US6607948B1 (en) * 1998-12-24 2003-08-19 Kabushiki Kaisha Toshiba Method of manufacturing a substrate using an SiGe layer
JP2000208775A (ja) * 1999-01-18 2000-07-28 Furontekku:Kk 半導体装置とその製造方法
KR100653298B1 (ko) * 1999-03-16 2006-12-04 산요덴키가부시키가이샤 박막 트랜지스터의 제조 방법
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
JP4447128B2 (ja) * 2000-07-12 2010-04-07 富士通マイクロエレクトロニクス株式会社 絶縁ゲート型半導体装置の製造方法
JP4358998B2 (ja) * 2001-02-01 2009-11-04 株式会社日立製作所 薄膜トランジスタ装置およびその製造方法
TW523931B (en) * 2001-02-20 2003-03-11 Hitachi Ltd Thin film transistor and method of manufacturing the same
US6482705B1 (en) * 2001-04-03 2002-11-19 Advanced Micro Devices, Inc. Method of fabricating a semiconductor device having a MOSFET with an amorphous SiGe gate electrode and an elevated crystalline SiGe source/drain structure and a device thereby formed
TW480735B (en) * 2001-04-24 2002-03-21 United Microelectronics Corp Structure and manufacturing method of polysilicon thin film transistor
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
JP2003031495A (ja) * 2001-07-12 2003-01-31 Hitachi Ltd 半導体装置用基板の製造方法および半導体装置の製造方法
US7238557B2 (en) * 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
AU2003202499A1 (en) * 2002-01-09 2003-07-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and its production method
US6805962B2 (en) * 2002-01-23 2004-10-19 International Business Machines Corporation Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications
WO2005093807A1 (en) * 2004-03-01 2005-10-06 S.O.I.Tec Silicon On Insulator Technologies Oxidation process of a sige layer and applications thereof
US7737051B2 (en) 2004-03-10 2010-06-15 Tokyo Electron Limited Silicon germanium surface layer for high-k dielectric integration
KR100635567B1 (ko) * 2004-06-29 2006-10-17 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
US20060003485A1 (en) * 2004-06-30 2006-01-05 Hoffman Randy L Devices and methods of making the same
CN102569342B (zh) 2004-12-06 2015-04-22 株式会社半导体能源研究所 显示装置
US7851277B2 (en) 2006-12-05 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP5527966B2 (ja) * 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
US7932138B2 (en) * 2007-12-28 2011-04-26 Viatron Technologies Inc. Method for manufacturing thin film transistor
FR2946457B1 (fr) * 2009-06-05 2012-03-09 St Microelectronics Sa Procede de formation d'un niveau d'un circuit integre par integration tridimensionnelle sequentielle.
KR101926646B1 (ko) 2010-04-16 2018-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치용 전극 및 그 제작 방법
US8598020B2 (en) * 2010-06-25 2013-12-03 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of crystalline germanium
FR2994770A1 (fr) * 2012-08-21 2014-02-28 Commissariat Energie Atomique Electrode composite si-ge et son procede de fabrication
TWI476935B (zh) * 2012-10-03 2015-03-11 Nat Applied Res Laboratories 薄膜電晶體製造方法
CN115458409A (zh) * 2022-08-25 2022-12-09 上海华力集成电路制造有限公司 一种SiGe沟道的形成方法

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US4442449A (en) * 1981-03-16 1984-04-10 Fairchild Camera And Instrument Corp. Binary germanium-silicon interconnect and electrode structure for integrated circuits
US5108940A (en) * 1987-12-22 1992-04-28 Siliconix, Inc. MOS transistor with a charge induced drain extension
JPH01235276A (ja) * 1988-03-15 1989-09-20 Sony Corp 薄膜半導体装置
JPH0395969A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体装置
JP2806999B2 (ja) * 1989-11-22 1998-09-30 ティーディーケイ株式会社 多結晶シリコン薄膜トランジスタ及びその製造方法
JPH03280437A (ja) * 1990-03-29 1991-12-11 Toshiba Corp 半導体装置およびその製造方法
US5250818A (en) * 1991-03-01 1993-10-05 Board Of Trustees Of Leland Stanford University Low temperature germanium-silicon on insulator thin-film transistor
US5602403A (en) * 1991-03-01 1997-02-11 The United States Of America As Represented By The Secretary Of The Navy Ion Implantation buried gate insulator field effect transistor
US5468987A (en) * 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
KR960001611B1 (ko) * 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US5241214A (en) * 1991-04-29 1993-08-31 Massachusetts Institute Of Technology Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof
US5495121A (en) * 1991-09-30 1996-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP3144032B2 (ja) * 1992-03-30 2001-03-07 ソニー株式会社 薄膜トランジスタ及びその製造方法
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
JP3325992B2 (ja) * 1994-01-08 2002-09-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5561302A (en) * 1994-09-26 1996-10-01 Motorola, Inc. Enhanced mobility MOSFET device and method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040020272A (ko) * 2002-08-30 2004-03-09 노성훈 건강 모자
KR100810639B1 (ko) * 2006-12-06 2008-03-07 삼성에스디아이 주식회사 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치
KR100810638B1 (ko) 2006-12-06 2008-03-07 삼성에스디아이 주식회사 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치
US8673697B2 (en) 2008-01-18 2014-03-18 Samsung Display Co., Ltd. Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same
KR101147414B1 (ko) * 2009-09-22 2012-05-22 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
US8633479B2 (en) 2009-09-22 2014-01-21 Samsung Display Co., Ltd. Display device with metal oxidel layer and method for manufacturing the same

Also Published As

Publication number Publication date
US6118151A (en) 2000-09-12
DE69522370T2 (de) 2002-04-25
EP0684650A3 (en) 1997-09-10
TW288196B (https=) 1996-10-11
EP0684650A2 (en) 1995-11-29
DE69522370D1 (de) 2001-10-04
EP0935292A2 (en) 1999-08-11
EP0684650B1 (en) 2001-08-29
US6228692B1 (en) 2001-05-08
JPH07321323A (ja) 1995-12-08
EP0935292A3 (en) 1999-08-18

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