DE69522370T2 - SiGe-Dünnfilm-Halbleiteranordnung mit SiGe Schichtstruktur und Verfahren zur Herstellung - Google Patents

SiGe-Dünnfilm-Halbleiteranordnung mit SiGe Schichtstruktur und Verfahren zur Herstellung

Info

Publication number
DE69522370T2
DE69522370T2 DE69522370T DE69522370T DE69522370T2 DE 69522370 T2 DE69522370 T2 DE 69522370T2 DE 69522370 T DE69522370 T DE 69522370T DE 69522370 T DE69522370 T DE 69522370T DE 69522370 T2 DE69522370 T2 DE 69522370T2
Authority
DE
Germany
Prior art keywords
film
semiconductor layer
thermal oxide
oxide film
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69522370T
Other languages
German (de)
English (en)
Other versions
DE69522370D1 (de
Inventor
Hiroshi Tsutsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69522370D1 publication Critical patent/DE69522370D1/de
Publication of DE69522370T2 publication Critical patent/DE69522370T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01314—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of Ge, C or of compounds of Si, Ge or C contacting the insulator

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
DE69522370T 1994-05-24 1995-05-23 SiGe-Dünnfilm-Halbleiteranordnung mit SiGe Schichtstruktur und Verfahren zur Herstellung Expired - Fee Related DE69522370T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6109233A JPH07321323A (ja) 1994-05-24 1994-05-24 薄膜トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69522370D1 DE69522370D1 (de) 2001-10-04
DE69522370T2 true DE69522370T2 (de) 2002-04-25

Family

ID=14504996

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69522370T Expired - Fee Related DE69522370T2 (de) 1994-05-24 1995-05-23 SiGe-Dünnfilm-Halbleiteranordnung mit SiGe Schichtstruktur und Verfahren zur Herstellung

Country Status (6)

Country Link
US (2) US6118151A (https=)
EP (2) EP0935292A3 (https=)
JP (1) JPH07321323A (https=)
KR (1) KR100191091B1 (https=)
DE (1) DE69522370T2 (https=)
TW (1) TW288196B (https=)

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US6121126A (en) * 1998-02-25 2000-09-19 Micron Technologies, Inc. Methods and structures for metal interconnections in integrated circuits
RU2206643C2 (ru) * 1998-11-26 2003-06-20 Син-Етцу Хандотай Ко., Лтд. Кремнегерманиевый кристалл
US6607948B1 (en) * 1998-12-24 2003-08-19 Kabushiki Kaisha Toshiba Method of manufacturing a substrate using an SiGe layer
JP2000208775A (ja) * 1999-01-18 2000-07-28 Furontekku:Kk 半導体装置とその製造方法
KR100653298B1 (ko) * 1999-03-16 2006-12-04 산요덴키가부시키가이샤 박막 트랜지스터의 제조 방법
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
JP4447128B2 (ja) * 2000-07-12 2010-04-07 富士通マイクロエレクトロニクス株式会社 絶縁ゲート型半導体装置の製造方法
JP4358998B2 (ja) * 2001-02-01 2009-11-04 株式会社日立製作所 薄膜トランジスタ装置およびその製造方法
TW523931B (en) * 2001-02-20 2003-03-11 Hitachi Ltd Thin film transistor and method of manufacturing the same
US6482705B1 (en) * 2001-04-03 2002-11-19 Advanced Micro Devices, Inc. Method of fabricating a semiconductor device having a MOSFET with an amorphous SiGe gate electrode and an elevated crystalline SiGe source/drain structure and a device thereby formed
TW480735B (en) * 2001-04-24 2002-03-21 United Microelectronics Corp Structure and manufacturing method of polysilicon thin film transistor
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
JP2003031495A (ja) * 2001-07-12 2003-01-31 Hitachi Ltd 半導体装置用基板の製造方法および半導体装置の製造方法
US7238557B2 (en) * 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
AU2003202499A1 (en) * 2002-01-09 2003-07-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and its production method
US6805962B2 (en) * 2002-01-23 2004-10-19 International Business Machines Corporation Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications
KR20040020272A (ko) * 2002-08-30 2004-03-09 노성훈 건강 모자
WO2005093807A1 (en) * 2004-03-01 2005-10-06 S.O.I.Tec Silicon On Insulator Technologies Oxidation process of a sige layer and applications thereof
US7737051B2 (en) 2004-03-10 2010-06-15 Tokyo Electron Limited Silicon germanium surface layer for high-k dielectric integration
KR100635567B1 (ko) * 2004-06-29 2006-10-17 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
US20060003485A1 (en) * 2004-06-30 2006-01-05 Hoffman Randy L Devices and methods of making the same
CN102569342B (zh) 2004-12-06 2015-04-22 株式会社半导体能源研究所 显示装置
US7851277B2 (en) 2006-12-05 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
KR100810638B1 (ko) 2006-12-06 2008-03-07 삼성에스디아이 주식회사 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치
KR100810639B1 (ko) * 2006-12-06 2008-03-07 삼성에스디아이 주식회사 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치
JP5527966B2 (ja) * 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
US7932138B2 (en) * 2007-12-28 2011-04-26 Viatron Technologies Inc. Method for manufacturing thin film transistor
KR101015847B1 (ko) 2008-01-18 2011-02-23 삼성모바일디스플레이주식회사 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치
FR2946457B1 (fr) * 2009-06-05 2012-03-09 St Microelectronics Sa Procede de formation d'un niveau d'un circuit integre par integration tridimensionnelle sequentielle.
KR101147414B1 (ko) * 2009-09-22 2012-05-22 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101926646B1 (ko) 2010-04-16 2018-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치용 전극 및 그 제작 방법
US8598020B2 (en) * 2010-06-25 2013-12-03 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of crystalline germanium
FR2994770A1 (fr) * 2012-08-21 2014-02-28 Commissariat Energie Atomique Electrode composite si-ge et son procede de fabrication
TWI476935B (zh) * 2012-10-03 2015-03-11 Nat Applied Res Laboratories 薄膜電晶體製造方法
CN115458409A (zh) * 2022-08-25 2022-12-09 上海华力集成电路制造有限公司 一种SiGe沟道的形成方法

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US5108940A (en) * 1987-12-22 1992-04-28 Siliconix, Inc. MOS transistor with a charge induced drain extension
JPH01235276A (ja) * 1988-03-15 1989-09-20 Sony Corp 薄膜半導体装置
JPH0395969A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体装置
JP2806999B2 (ja) * 1989-11-22 1998-09-30 ティーディーケイ株式会社 多結晶シリコン薄膜トランジスタ及びその製造方法
JPH03280437A (ja) * 1990-03-29 1991-12-11 Toshiba Corp 半導体装置およびその製造方法
US5250818A (en) * 1991-03-01 1993-10-05 Board Of Trustees Of Leland Stanford University Low temperature germanium-silicon on insulator thin-film transistor
US5602403A (en) * 1991-03-01 1997-02-11 The United States Of America As Represented By The Secretary Of The Navy Ion Implantation buried gate insulator field effect transistor
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KR960001611B1 (ko) * 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US5241214A (en) * 1991-04-29 1993-08-31 Massachusetts Institute Of Technology Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof
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Also Published As

Publication number Publication date
US6118151A (en) 2000-09-12
EP0684650A3 (en) 1997-09-10
TW288196B (https=) 1996-10-11
EP0684650A2 (en) 1995-11-29
DE69522370D1 (de) 2001-10-04
KR100191091B1 (ko) 1999-07-01
EP0935292A2 (en) 1999-08-11
EP0684650B1 (en) 2001-08-29
US6228692B1 (en) 2001-05-08
JPH07321323A (ja) 1995-12-08
EP0935292A3 (en) 1999-08-18

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee