JP7386830B2 - 感光撮像素子および関連方法 - Google Patents
感光撮像素子および関連方法 Download PDFInfo
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- JP7386830B2 JP7386830B2 JP2021134458A JP2021134458A JP7386830B2 JP 7386830 B2 JP7386830 B2 JP 7386830B2 JP 2021134458 A JP2021134458 A JP 2021134458A JP 2021134458 A JP2021134458 A JP 2021134458A JP 7386830 B2 JP7386830 B2 JP 7386830B2
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- sensor array
- photosensitive image
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- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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Description
本願は、米国仮特許出願第61/243,434号(2009年9月17日出願)、米国仮特許出願第61/311,004号(2010年3月5日出願)、および米国仮特許出願第61/311,107号(2010年3月5日出願)の利益を主張し、これらの出願の各々は、本明細書に参照によって援用される。
光と半導体材料の相互作用は、重要な革新となっている。シリコン撮像素子は、デジタルカメラ、光学マウス、ビデオカメラ、携帯電話等の種々の技術において使用されている。電荷結合素子(CCD)は、デジタル撮像において広く使用され、後に、性能が向上した相補型金属酸化膜半導体(CMOS)撮像素子によって改良された。CMOSセンサは、一般的には、シリコンから製造され、可視入射光を光電流に変換し、最終的には、デジタル画像に変換することができる。しかしながら、シリコンは、約1.1eVのバンドギャップを有する間接バンドギャップ半導体であるため、赤外線入射電磁放射を検出するためのシリコンベースの技術は、問題となっている。したがって、約1100nm超の波長を有する電磁放射の吸収は、シリコン内では非常に低い。
以下の用語は、以下に記載される定義に従って使用されるであろう。
電磁放射は、可視範囲波長(約350nm乃至800nm)および非可視波長(約800nmより長いか、または350nmより短い)を含む広い波長範囲にわたって存在することができる。赤外線スペクトルは、多くの場合、約800乃至1300nmの波長を含む、スペクトルの近赤外線部分、約1300nm乃至3マイクロメートルの波長を含む、スペクトルの短波赤外線部分、および約3マイクロメートル超乃至約30マイクロメートルの波長を含む、スペクトルの中波から長波赤外線(また、熱赤外線)部分を含むように説明される。これらは、概して、および集合的に、そうでないとする指示がない限り、本明細書では、電磁スペクトルの「赤外線」部分と称される。
式中、「τL」は、過剰な担体の寿命であって、「τt」は、素子にわたる担体の遷移時間である。過剰な担体の寿命は、担体種を捕捉し、再結合率を低減させることによって、延長させることができることを理解されたい。利得の増加は、室温でミリ秒の捕捉時間と、薄層化低濃度ドープウエハ中で短遷移時間を有する、半導体の中心を捕捉することによって達成することができる。これらの捕捉場所は、担体の再結合を低減させ、したがって、再結合させることなく、より多くの電子を異なる領域に横断させることによって、素子の光伝導利得を改善または増加させることができる。
ることが想定される。非バルク材料の追加は、電磁放射拡散特徴を非バルク材料上または
その中に形成可能にする。本開示の一側面では、開口を画定する金属層もまた、含めることができる。金属層は、ドープ領域近傍に形成されることができ、開口を画定する光入射領域を有することができる。この光入射領域はまた、反射防止材料を含むことができる。
Claims (7)
- 感光撮像素子アレイであって、
少なくとも2つの感光撮像素子装置を有し、各感光撮像素子装置は、
実質的に平面的な表面と、少なくとも1つの接合部を形成する複数のドープ領域とを有する半導体基板であり、該半導体基板は、電磁放射が該実質的に平面的な表面の方向から前記装置に入射するように構成され、且つ約1~10ミクロンの範囲の厚みを有する、前記半導体基板と、
テクスチャ加工領域であって、該実質的に平面的な表面の反対側の表面上で該半導体基板に結合され、該半導体基板内で電磁放射の複数の通過が生じるように該テクスチャ加工領域上の入射電磁放射を拡散すること及び該電磁放射を再指向することのうちの少なくとも1つを行うように配置された、前記テクスチャ加工領域と、
該実質的に平面的な表面において形成された集積回路と、
該半導体基板に結合された電気伝導要素であって、該少なくとも1つの接合部から電気信号を伝導するように動作可能である前記電気伝導要素と、
前記少なくとも2つの感光撮像素子装置の前記半導体基板の前記実質的に平面的な表面の反対側に結合された支持基板と、
前記少なくとも2つの感光撮像素子装置の間に設置された少なくとも1つのトレンチ分離と、
前記半導体基板に結合された反射層であって、該反射層は、電磁放射を該半導体基板内に指向させるように前記支持基板と前記テクスチャ加工領域の間に配置されている、前記反射層と、
を備える、感光撮像素子アレイ。 - 請求項1に記載の感光撮像素子アレイにおいて、
前記電気伝導要素は、トランジスタ、感知ノード、伝導ゲート、それらの組み合わせから成る群から選択される、
ことを特徴とする感光撮像素子アレイ。 - 請求項1に記載の感光撮像素子アレイにおいて、
前記半導体基板に対する前記テクスチャ加工領域の表面形態は、傾斜状、ピラミッド状、逆ピラミッド状、球状、放物線状、非対称状、対称状、それらの組み合わせから成る群から選択される要素である、
ことを特徴とする感光撮像素子アレイ。 - 請求項1に記載の感光撮像素子アレイにおいて、
前記実質的に平面的な表面に隣接する該半導体基板の表面上に配置された付加的テクスチャ加工領域をさらに備える、
ことを特徴とする感光撮像素子アレイ。 - 請求項1に記載の感光撮像素子アレイにおいて、
前記テクスチャ加工領域は、ミクロンサイズ、ナノサイズ、それらの組み合わせから成る群から選択されるサイズを有する表面特徴を含む、
ことを特徴とする感光撮像素子アレイ。 - 請求項1に記載の感光撮像素子アレイにおいて、
前記半導体基板の前記実質的に平面的な表面上の前記複数のドープ領域の近傍に形成された金属層をさらに有し、
この金属層は、開口を区画しこの開口を通って電磁エネルギーを前記半導体基板に入射させるものである、感光撮像素子アレイ。 - 請求項6に記載の感光撮像素子アレイにおいて、
前記開口を通して前記半導体基板に入射する電磁エネルギーを集束するレンズをさらに有することを特徴とする、感光撮像素子アレイ。
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JP2009503898A (ja) | 2005-08-03 | 2009-01-29 | マイクロン テクノロジー, インク. | 赤外放射による画像アーティファクトを低減するバックサイドシリコンウェハの設計 |
JP2007305675A (ja) | 2006-05-09 | 2007-11-22 | Sony Corp | 固体撮像素子、撮像装置 |
WO2010098224A1 (ja) | 2009-02-24 | 2010-09-02 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
JP2010226071A (ja) | 2009-02-24 | 2010-10-07 | Hamamatsu Photonics Kk | 半導体光検出素子 |
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US8680591B2 (en) | 2014-03-25 |
KR20210035920A (ko) | 2021-04-01 |
JP2016197733A (ja) | 2016-11-24 |
JP2024020375A (ja) | 2024-02-14 |
KR101893331B1 (ko) | 2018-08-30 |
US20110227138A1 (en) | 2011-09-22 |
EP2478560A2 (en) | 2012-07-25 |
CN102630341A (zh) | 2012-08-08 |
JP6356181B2 (ja) | 2018-07-11 |
EP2478560A4 (en) | 2014-06-18 |
KR20200036037A (ko) | 2020-04-06 |
KR20120069708A (ko) | 2012-06-28 |
KR102443836B1 (ko) | 2022-09-15 |
JP2018201019A (ja) | 2018-12-20 |
KR102095669B1 (ko) | 2020-04-01 |
WO2011035188A2 (en) | 2011-03-24 |
WO2011035188A3 (en) | 2011-06-23 |
KR102234065B1 (ko) | 2021-03-31 |
JP2021193737A (ja) | 2021-12-23 |
JP2013505587A (ja) | 2013-02-14 |
KR20180098687A (ko) | 2018-09-04 |
JP5961332B2 (ja) | 2016-08-02 |
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