JP6939946B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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Description
特許文献1 特開2007−311627号公報
特許文献2 特表2014−61075号公報
特許文献3 特開2015−138884号公報
Claims (13)
- トランジスタ部およびダイオード部を備える半導体装置であって、
第1導電型のドリフト領域を有する半導体基板と、
前記半導体基板の内部において前記ドリフト領域の上方に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記半導体基板の内部において前記ドリフト領域の上方に設けられた第2導電型のベース領域と、
前記半導体基板の内部において前記ベース領域と前記ドリフト領域の間に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型の第1の蓄積領域と、
前記半導体基板の上面から裏面側に延伸して設けられ、内部に導電部が設けられた複数のトレンチ部と、
前記トランジスタ部において、前記ダイオード部と隣接する領域に設けられた中間領域と、
前記2つのトレンチ部の間において、前記第1の蓄積領域よりも下方に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型の第2の蓄積領域と
を備え、
前記中間領域は、
前記ドリフト領域と、
前記ドリフト領域の上方に設けられた前記ベース領域と、
前記半導体基板の裏面に設けられ、前記ベース領域よりもドーピング濃度の高い第2導電型のコレクタ領域と
を有し、
前記複数のトレンチ部は、
前記導電部がゲート電位に設定されたゲートトレンチ部と、
前記導電部がゲート電位とは異なる電位に設定されたダミートレンチ部と
を含み、
前記中間領域の前記ベース領域は、前記ダミートレンチ部に接して設けられ、
前記中間領域は、前記ダミートレンチ部に挟まれたメサ部を有する
半導体装置。 - 前記第2の蓄積領域は、前記半導体基板の深さ方向において複数設けられる
請求項1に記載の半導体装置。 - 前記ダミートレンチ部は、エミッタ電位が印加される
請求項1または2に記載の半導体装置。 - 前記中間領域は、前記複数のトレンチ部に挟まれた複数のメサ部を備える
請求項1から3のいずれか一項に記載の半導体装置。 - 前記中間領域は、前記複数のメサ部のうち、前記トランジスタ部側に設けられたメサ部において、前記半導体基板の上面に、前記ベース領域よりもドーピング濃度の高い第2導電型のコンタクト領域を有する
請求項4に記載の半導体装置。 - トランジスタ部およびダイオード部を備える半導体装置であって、
第1導電型のドリフト領域を有する半導体基板と、
前記半導体基板の内部において前記ドリフト領域の上方に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記半導体基板の内部において前記ドリフト領域の上方に設けられた第2導電型のベース領域と、
前記半導体基板の内部において前記ベース領域と前記ドリフト領域の間に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型の第1の蓄積領域と、
前記半導体基板の上面から裏面側に延伸して設けられ、内部に導電部が設けられた複数のトレンチ部と、
前記トランジスタ部において、前記ダイオード部と隣接する領域に設けられた中間領域と、
前記2つのトレンチ部の間において、前記第1の蓄積領域よりも下方に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型の第2の蓄積領域と
を備え、
前記中間領域は、
前記ドリフト領域と、
前記ドリフト領域の上方に設けられた前記ベース領域と、
前記半導体基板の裏面に設けられ、前記ベース領域よりもドーピング濃度の高い第2導電型のコレクタ領域と
を有し、
前記中間領域は、前記複数のトレンチ部に挟まれた複数のメサ部を備え、
前記中間領域は、前記複数のメサ部のうち、前記トランジスタ部側に設けられたメサ部において、前記半導体基板の上面に、前記ベース領域よりもドーピング濃度の高い第2導電型のコンタクト領域を有し、
前記中間領域は、前記複数のメサ部のうち、前記ダイオード部側に設けられたメサ部の前記半導体基板の上面において、前記ベース領域および前記コンタクト領域を有し、前記ベース領域が露出する面積は、前記コンタクト領域が露出する面積よりも大きい
半導体装置。 - 前記第1の蓄積領域は、前記中間領域には設けられていない
請求項1から6のいずれか一項に記載の半導体装置。 - 前記第2の蓄積領域は、ゲート−コレクタ間容量を付加する容量付加部である
請求項1から7のいずれか一項に記載の半導体装置。 - トランジスタ部およびダイオード部を備える半導体装置であって、
第1導電型のドリフト領域を有する半導体基板と、
前記半導体基板の内部において前記ドリフト領域の上方に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記半導体基板の内部において前記ドリフト領域の上方に設けられた第2導電型のベース領域と、
前記半導体基板の内部において前記ベース領域と前記ドリフト領域の間に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型の第1の蓄積領域と、
前記半導体基板の上面から裏面側に延伸して設けられ、内部に導電部が設けられた複数のトレンチ部と、
前記トランジスタ部において、前記ダイオード部と隣接する領域に設けられた中間領域と、
前記2つのトレンチ部の間において、前記第1の蓄積領域よりも下方に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型の第2の蓄積領域と
を備え、
前記中間領域は、
前記ドリフト領域と、
前記ドリフト領域の上方に設けられた前記ベース領域と、
前記半導体基板の裏面に設けられ、前記ベース領域よりもドーピング濃度の高い第2導電型のコレクタ領域と
を有し、
前記複数のトレンチ部は、
前記導電部がゲート電位に設定されたゲートトレンチ部と、
前記導電部がゲート電位とは異なる電位に設定されたダミートレンチ部と
を含み、
前記中間領域の前記ベース領域は、前記ダミートレンチ部に接して設けられ、
前記トランジスタ部のうち前記中間領域に最も近く隣接するメサ部は、前記ダミートレンチ部に挟まれている
半導体装置。 - 前記ダイオード部には、前記第1の蓄積領域が設けられている
請求項1から9のいずれか一項に記載の半導体装置。 - 前記ダイオード部には、前記第2の蓄積領域が設けられている
請求項1から9のいずれか一項に記載の半導体装置。 - トランジスタ部およびダイオード部を備える半導体装置の製造方法であって、
第1導電型のドリフト領域を有する半導体基板の内部において前記ドリフト領域の上方に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域を形成するエミッタ領域形成段階と、
前記半導体基板の内部において前記ドリフト領域の上方に設けられた第2導電型のベース領域を形成するベース領域形成段階と、
前記半導体基板の内部において前記ベース領域と前記ドリフト領域の間に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型の第1の蓄積領域を形成する第1の蓄積領域形成段階と、
前記半導体基板の上面から裏面側に延伸して設けられ、内部に導電部が設けられた複数のトレンチ部を形成するトレンチ形成段階と、
前記トランジスタ部において、前記ダイオード部と隣接する領域に中間領域を形成する中間領域形成段階と、
前記2つのトレンチ部の間において、前記第1の蓄積領域よりも下方に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型の第2の蓄積領域を形成する第2の蓄積領域形成段階と
を備え、
前記中間領域は、
前記ドリフト領域と、
前記ドリフト領域の上方に設けられた前記ベース領域と、
前記半導体基板の裏面に設けられ、前記ベース領域よりもドーピング濃度の高い第2導電型のコレクタ領域と
を有し、
前記複数のトレンチ部は、
前記導電部がゲート電位に設定されたゲートトレンチ部と、
前記導電部がゲート電位とは異なる電位に設定されたダミートレンチ部と
を含み、
前記中間領域の前記ベース領域は、前記ダミートレンチ部に接して設けられ、
前記中間領域は、前記ダミートレンチ部に挟まれたメサ部を有する
半導体装置の製造方法。 - 前記半導体基板の上方にエミッタ電極を形成する段階と、
前記半導体基板に電子線を照射する段階を備える
請求項12に記載の半導体装置の製造方法。
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CN108604594A (zh) | 2018-09-28 |
US11923444B2 (en) | 2024-03-05 |
JP7235078B2 (ja) | 2023-03-08 |
US11552185B2 (en) | 2023-01-10 |
US10847640B2 (en) | 2020-11-24 |
WO2018030440A1 (ja) | 2018-02-15 |
JP2023054242A (ja) | 2023-04-13 |
US20180350961A1 (en) | 2018-12-06 |
JP6702423B2 (ja) | 2020-06-03 |
JP2021192445A (ja) | 2021-12-16 |
CN108604594B (zh) | 2021-10-08 |
JP2020115596A (ja) | 2020-07-30 |
JPWO2018030440A1 (ja) | 2018-12-06 |
US20240128361A1 (en) | 2024-04-18 |
US20230142388A1 (en) | 2023-05-11 |
US20210074836A1 (en) | 2021-03-11 |
DE112017000297T5 (de) | 2018-11-15 |
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