JP2019186311A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2019186311A JP2019186311A JP2018072790A JP2018072790A JP2019186311A JP 2019186311 A JP2019186311 A JP 2019186311A JP 2018072790 A JP2018072790 A JP 2018072790A JP 2018072790 A JP2018072790 A JP 2018072790A JP 2019186311 A JP2019186311 A JP 2019186311A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 230000005684 electric field Effects 0.000 claims abstract description 165
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000009825 accumulation Methods 0.000 claims description 88
- 238000003860 storage Methods 0.000 abstract description 29
- 239000010410 layer Substances 0.000 description 135
- 238000009826 distribution Methods 0.000 description 63
- 239000011229 interlayer Substances 0.000 description 8
- 229920006395 saturated elastomer Polymers 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Abstract
Description
特許文献1 特開2010−114136号公報
特許文献2 特開2008−205015号公報
Claims (7)
- 半導体基板に設けられた第1導電型のドリフト領域と、
前記ドリフト領域の上方に設けられ、前記ドリフト領域よりも高ドーピング濃度である第1導電型の蓄積領域と、
前記蓄積領域の上方に設けられた第2導電型のベース領域と、
前記蓄積領域と前記ベース領域との間に設けられ、前記蓄積領域よりも低ドーピング濃度である電界緩和層と
を備える半導体装置。 - 前記電界緩和層は、前記ドリフト領域と同一のドーピング濃度の領域を有する第1導電型の領域を含む
請求項1に記載の半導体装置。 - 前記電界緩和層は、前記半導体基板の深さ方向において、前記ドリフト領域と同一のドーピング濃度の領域を0.5μm以上有する
請求項2に記載の半導体装置。 - 前記電界緩和層のドーピング濃度は、前記蓄積領域のドーピング濃度のピークよりも1桁以上低い
請求項1から3のいずれか一項に記載の半導体装置。 - 前記電界緩和層のドーピング濃度は、前記ベース領域のドーピング濃度のピークよりも低い
請求項1から4のいずれか一項に記載の半導体装置。 - 前記電界緩和層の厚みは、前記蓄積領域の厚み以下である
請求項1から5のいずれか一項に記載の半導体装置。 - 前記電界緩和層の厚みは、0.5μm以上、1.5μm未満である
請求項1から6のいずれか一項に記載の半導体装置。
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JP2018072790A JP2019186311A (ja) | 2018-04-04 | 2018-04-04 | 半導体装置 |
US16/281,002 US10707300B2 (en) | 2018-04-04 | 2019-02-20 | Semiconductor device |
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JP2018072790A JP2019186311A (ja) | 2018-04-04 | 2018-04-04 | 半導体装置 |
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JP2019186311A true JP2019186311A (ja) | 2019-10-24 |
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JP2018072790A Pending JP2019186311A (ja) | 2018-04-04 | 2018-04-04 | 半導体装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US11942535B2 (en) | 2019-09-13 | 2024-03-26 | Fuji Electric Co., Ltd. | Semiconductor device |
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WO2020075248A1 (ja) * | 2018-10-10 | 2020-04-16 | サンケン電気株式会社 | 半導体装置及びその製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311627A (ja) * | 2006-05-19 | 2007-11-29 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2013089700A (ja) * | 2011-10-14 | 2013-05-13 | Fuji Electric Co Ltd | 半導体装置 |
JP2013149798A (ja) * | 2012-01-19 | 2013-08-01 | Fuji Electric Co Ltd | 炭化珪素半導体装置 |
WO2018030444A1 (ja) * | 2016-08-12 | 2018-02-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2018030440A1 (ja) * | 2016-08-12 | 2018-02-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (2)
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JP5089191B2 (ja) | 2007-02-16 | 2012-12-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP5261137B2 (ja) | 2008-11-04 | 2013-08-14 | 株式会社豊田中央研究所 | バイポーラ型半導体装置 |
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2018
- 2018-04-04 JP JP2018072790A patent/JP2019186311A/ja active Pending
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- 2019-02-20 US US16/281,002 patent/US10707300B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311627A (ja) * | 2006-05-19 | 2007-11-29 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2013089700A (ja) * | 2011-10-14 | 2013-05-13 | Fuji Electric Co Ltd | 半導体装置 |
JP2013149798A (ja) * | 2012-01-19 | 2013-08-01 | Fuji Electric Co Ltd | 炭化珪素半導体装置 |
WO2018030444A1 (ja) * | 2016-08-12 | 2018-02-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2018030440A1 (ja) * | 2016-08-12 | 2018-02-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11942535B2 (en) | 2019-09-13 | 2024-03-26 | Fuji Electric Co., Ltd. | Semiconductor device |
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US10707300B2 (en) | 2020-07-07 |
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