JP2018041845A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000012535 impurity Substances 0.000 claims abstract description 50
- 238000009825 accumulation Methods 0.000 claims description 43
- 238000010586 diagram Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
【解決手段】第1導電型のドリフト領域を有する半導体基板と、半導体基板の内部においてドリフト領域の上方に設けられ、ドリフト領域よりも不純物濃度の高い第1導電型のエミッタ領域と、半導体基板の内部においてエミッタ領域とドリフト領域の間に設けられた第2導電型のベース領域と、半導体基板の内部においてベース領域とドリフト領域の間に設けられ、ドリフト領域よりも不純物濃度の高い第1導電型の蓄積領域と、半導体基板の上面からエミッタ領域、ベース領域および蓄積領域を貫通して設けられ、内部に導電部が設けられた複数のトレンチ部とを備え、蓄積領域の半導体基板の深さ方向における長さが1.5μm未満である半導体装置を提供する。
【選択図】図4
Description
特許文献1 特開2007−311627号公報
Claims (4)
- 第1導電型のドリフト領域を有する半導体基板と、
前記半導体基板の内部において前記ドリフト領域の上方に設けられ、前記ドリフト領域よりも不純物濃度の高い第1導電型のエミッタ領域と、
前記半導体基板の内部において前記エミッタ領域と前記ドリフト領域の間に設けられた第2導電型のベース領域と、
前記半導体基板の内部において前記ベース領域と前記ドリフト領域の間に設けられ、前記ドリフト領域よりも不純物濃度の高い第1導電型の蓄積領域と、
前記半導体基板の上面から前記エミッタ領域、前記ベース領域および前記蓄積領域を貫通して設けられ、内部に導電部が設けられた複数のトレンチ部と
を備え、
前記蓄積領域の前記半導体基板の深さ方向における長さが1.5μm未満である半導体装置。 - 前記蓄積領域における不純物濃度を、前記半導体基板の深さ方向に積分した積分濃度が、1.2×1013/cm2以上、1.8×1013/cm2以下である
請求項1に記載の半導体装置。 - 前記蓄積領域の前記半導体基板の深さ方向における不純物濃度分布は、不純物濃度が略一定の平坦領域を有している
請求項1または2に記載の半導体装置。 - 前記平坦領域の前記半導体基板の深さ方向における長さは、前記蓄積領域の前記半導体基板の深さ方向における長さの半分以上である
請求項3に記載の半導体装置。
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JP2016175099A JP6805655B2 (ja) | 2016-09-07 | 2016-09-07 | 半導体装置 |
US15/687,558 US10297660B2 (en) | 2016-09-07 | 2017-08-28 | Semiconductor device |
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Cited By (3)
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WO2020075248A1 (ja) * | 2018-10-10 | 2020-04-16 | サンケン電気株式会社 | 半導体装置及びその製造方法 |
JP2021158198A (ja) * | 2020-03-26 | 2021-10-07 | 三菱電機株式会社 | 半導体装置 |
JPWO2021049351A1 (ja) * | 2019-09-13 | 2021-12-23 | 富士電機株式会社 | 半導体装置 |
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JP6935731B2 (ja) * | 2017-11-16 | 2021-09-15 | 株式会社デンソー | 半導体装置 |
JP6777245B2 (ja) * | 2017-11-16 | 2020-10-28 | 富士電機株式会社 | 半導体装置 |
US11069770B2 (en) * | 2018-10-01 | 2021-07-20 | Ipower Semiconductor | Carrier injection control fast recovery diode structures |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007311627A (ja) * | 2006-05-19 | 2007-11-29 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
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JPWO2021049351A1 (ja) * | 2019-09-13 | 2021-12-23 | 富士電機株式会社 | 半導体装置 |
JP7264263B2 (ja) | 2019-09-13 | 2023-04-25 | 富士電機株式会社 | 半導体装置 |
US11942535B2 (en) | 2019-09-13 | 2024-03-26 | Fuji Electric Co., Ltd. | Semiconductor device |
JP2021158198A (ja) * | 2020-03-26 | 2021-10-07 | 三菱電機株式会社 | 半導体装置 |
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