JP7264263B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7264263B2 JP7264263B2 JP2021545226A JP2021545226A JP7264263B2 JP 7264263 B2 JP7264263 B2 JP 7264263B2 JP 2021545226 A JP2021545226 A JP 2021545226A JP 2021545226 A JP2021545226 A JP 2021545226A JP 7264263 B2 JP7264263 B2 JP 7264263B2
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- 239000004065 semiconductor Substances 0.000 title claims description 106
- 230000005684 electric field Effects 0.000 claims description 128
- 238000009825 accumulation Methods 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 53
- 238000009826 distribution Methods 0.000 description 24
- 239000010410 layer Substances 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
Description
特許文献1 特開2005-347289号公報
特許文献2 特開2008-205015号公報
特許文献3 特開2007-311627号公報
Claims (8)
- 半導体基板に設けられた第1導電型のドリフト領域と、
前記ドリフト領域の上方に設けられた第2導電型のベース領域と、
前記ベース領域と前記ドリフト領域との間に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型の蓄積領域と、
前記ベース領域と前記蓄積領域との間に設けられ、前記蓄積領域のドーピング濃度のピークよりもドーピング濃度の低い電界緩和領域と
を備え、
前記電界緩和領域と前記蓄積領域との境界は、前記蓄積領域の前記ピークの半値位置であり、
前記電界緩和領域の積分濃度が7.10E14cm -2 以上、2.98E15cm -2 以下である
半導体装置。 - 前記電界緩和領域の膜厚は、0.4μm以上、1.8μm以下である
請求項1に記載の半導体装置。 - 前記電界緩和領域の膜厚は、前記蓄積領域の膜厚以上である
請求項1に記載の半導体装置。 - 前記電界緩和領域は、前記ドリフト領域と同一のドーピング濃度の領域を含む
請求項1から3のいずれか一項に記載の半導体装置。 - 前記電界緩和領域のドーピング濃度は、前記蓄積領域のドーピング濃度の前記ピークの半値よりも小さいピークを有する
請求項1から4のいずれか一項に記載の半導体装置。 - 前記蓄積領域のドーピング濃度は、前記ベース領域のドーピング濃度のピークよりも低い
請求項1から5のいずれか一項に記載の半導体装置。 - 前記蓄積領域のドーピング濃度の前記ピークは、1E16cm-3以上、4E16cm-3以下である
請求項1から6のいずれか一項に記載の半導体装置。 - 前記蓄積領域の膜厚は、0.5μm以上、1.5μm以下である
請求項1から7のいずれか一項に記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019167090 | 2019-09-13 | ||
JP2019167090 | 2019-09-13 | ||
PCT/JP2020/032871 WO2021049351A1 (ja) | 2019-09-13 | 2020-08-31 | 半導体装置 |
Publications (2)
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JPWO2021049351A1 JPWO2021049351A1 (ja) | 2021-12-23 |
JP7264263B2 true JP7264263B2 (ja) | 2023-04-25 |
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US (1) | US11942535B2 (ja) |
JP (1) | JP7264263B2 (ja) |
CN (1) | CN113519062A (ja) |
DE (1) | DE112020000621T5 (ja) |
WO (1) | WO2021049351A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311627A (ja) | 2006-05-19 | 2007-11-29 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
WO2018030440A1 (ja) | 2016-08-12 | 2018-02-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018041845A (ja) | 2016-09-07 | 2018-03-15 | 富士電機株式会社 | 半導体装置 |
WO2019142706A1 (ja) | 2018-01-17 | 2019-07-25 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (9)
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JP4575713B2 (ja) | 2004-05-31 | 2010-11-04 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JP5089191B2 (ja) | 2007-02-16 | 2012-12-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CN101694850B (zh) * | 2009-10-16 | 2011-09-14 | 电子科技大学 | 一种具有p型浮空层的载流子存储槽栅igbt |
JP5754543B2 (ja) * | 2012-03-16 | 2015-07-29 | 富士電機株式会社 | 半導体装置 |
WO2018016543A1 (ja) | 2016-07-19 | 2018-01-25 | 富士電機株式会社 | 半導体装置 |
JP7251914B2 (ja) * | 2016-10-17 | 2023-04-04 | 富士電機株式会社 | 半導体装置 |
CN109075202B (zh) * | 2016-11-17 | 2021-08-31 | 富士电机株式会社 | 半导体装置 |
JP7143085B2 (ja) * | 2018-01-31 | 2022-09-28 | 三菱電機株式会社 | 半導体装置、電力変換装置及び半導体装置の製造方法 |
JP2019186311A (ja) | 2018-04-04 | 2019-10-24 | 富士電機株式会社 | 半導体装置 |
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2020
- 2020-08-31 JP JP2021545226A patent/JP7264263B2/ja active Active
- 2020-08-31 CN CN202080017821.XA patent/CN113519062A/zh active Pending
- 2020-08-31 DE DE112020000621.2T patent/DE112020000621T5/de active Pending
- 2020-08-31 WO PCT/JP2020/032871 patent/WO2021049351A1/ja active Application Filing
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2021
- 2021-08-24 US US17/409,819 patent/US11942535B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311627A (ja) | 2006-05-19 | 2007-11-29 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
WO2018030440A1 (ja) | 2016-08-12 | 2018-02-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018041845A (ja) | 2016-09-07 | 2018-03-15 | 富士電機株式会社 | 半導体装置 |
WO2019142706A1 (ja) | 2018-01-17 | 2019-07-25 | 富士電機株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
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DE112020000621T5 (de) | 2021-10-14 |
US20210384332A1 (en) | 2021-12-09 |
CN113519062A (zh) | 2021-10-19 |
JPWO2021049351A1 (ja) | 2021-12-23 |
WO2021049351A1 (ja) | 2021-03-18 |
US11942535B2 (en) | 2024-03-26 |
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