JP6582762B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6582762B2 JP6582762B2 JP2015174091A JP2015174091A JP6582762B2 JP 6582762 B2 JP6582762 B2 JP 6582762B2 JP 2015174091 A JP2015174091 A JP 2015174091A JP 2015174091 A JP2015174091 A JP 2015174091A JP 6582762 B2 JP6582762 B2 JP 6582762B2
- Authority
- JP
- Japan
- Prior art keywords
- igbt
- trench
- diode
- region
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 239000010410 layer Substances 0.000 claims description 56
- 239000002344 surface layer Substances 0.000 claims description 15
- 239000011295 pitch Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本発明の第1実施形態について説明する。図1に示すように、本実施形態にかかる半導体装置は、基板厚み方向に電流を流す縦型のIGBTとFWDとが1つの基板に備えられたRC−IGBT構造により構成されている。具体的には、本実施形態にかかる半導体装置は、以下のように構成されている。
本発明の第2実施形態について説明する。本実施形態は、第1実施形態に対してトレンチ6の形状などを変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第3実施形態について説明する。本実施形態は、第1実施形態に対してトレンチ6の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第4実施形態について説明する。本実施形態も、第1実施形態に対してトレンチ6の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
3 コレクタ領域
4 カソード領域
5a チャネルp型領域
5b アノード領域
6 トレンチ
7 エミッタ領域
9 ゲート電極
100 IGBT部
200 FWD部
Claims (7)
- 縦型のIGBTが形成されたIGBT部(100)と、前記IGBT部に沿って備えられ、ダイオードが形成されたダイオード部(200)と、が1チップに形成された半導体装置であって、
第1導電型のドリフト層(1)と、
前記IGBT部において、前記ドリフト層の裏面側に形成された第2導電型のコレクタ領域(3)と、
前記ダイオード部において、前記ドリフト層の裏面側に形成された第1導電型のカソード領域(4)と、
前記ドリフト層の表面側の表層部において、前記IGBT部および前記ダイオード部の双方に形成された第2導電型領域(5)と、
前記IGBT部および前記ダイオード部に複数本並べられて形成され、前記第2導電型領域よりも深く形成されて前記第2導電型領域を複数に分けることで、前記IGBT部における前記第2導電型領域の少なくとも一部によってチャネル領域(5a)を構成すると共に、前記ダイオード部における前記第2導電型領域によってアノード領域(5b)を構成する複数のトレンチ(6)と、
前記IGBT部において、前記チャネル領域の表層部に前記トレンチの側面に沿って形成された第1導電型のエミッタ領域(7)と、
前記トレンチの表面に形成されたゲート絶縁膜(8)と、
前記ゲート絶縁膜の表面に形成されたゲート電極(9)と、
前記IGBT部において前記第2導電型領域に電気的に接続されると共に、前記アノード領域に電気的に接続された上部電極(11)と、
前記IGBT部において前記コレクタ領域に電気的に接続されると共に、前記ダイオード部において前記カソード領域と電気的に接続された下部電極(12)と、を備え、
前記複数のトレンチの間のうち、前記ダイオード部の前記ドリフト層において最も間隔が狭くなる部分の幅をメサ幅として、該メサ幅が0.3μm以上かつ0.8μm以下に設定され、
前記IGBT部では、前記ドリフト層において最も間隔が狭くなる部分の幅をメサ幅として、該IGBT部におけるメサ幅よりも前記ダイオード部におけるメサ幅の方が広くなっており、
前記IGBT部および前記ダイオード部における前記複数のトレンチが配置されるピッチは等しくされ、前記トレンチにおける対向する側壁の間の間隔となる開口幅について、前記IGBT部よりも前記ダイオード部の方が小さくされていることを特徴とする半導体装置。 - 前記トレンチは、開口入口側となる第1トレンチ(6a)と、前記第1トレンチと連通し、対向する側壁の間隔となる開口幅が前記第1トレンチの開口幅より広くされていると共に底部が前記ドリフト層に位置する第2トレンチ(6b)とを有し、
前記ダイオード部において、前記第2トレンチの間の間隔を該ダイオード部におけるメサ幅として、該メサ幅が0.3μm以上に設定されていることを特徴とする請求項1に記載の半導体装置。 - 前記IGBT部において、前記第2トレンチの間の間隔が該IGBT部におけるメサ幅とされ、該メサ幅が0.3μm以下に設定されていることを特徴とする請求項2に記載の半導体装置。
- 前記トレンチは、開口入口側となる第1トレンチ(6a)と、前記第1トレンチと連通し、対向する側壁の間隔である開口幅が前記第1トレンチの開口幅より長くされていると共に底部が前記ドリフト層に位置する第2トレンチ(6b)とを有し、
前記ダイオード部において、前記第2トレンチの間の間隔を該ダイオード部における前記メサ幅とし、
前記IGBT部において、前記第2トレンチの間の間隔を該IGBT部におけるメサ幅として、
前記ダイオード部におけるメサ幅が前記IGBT部におけるメサ幅と異なる幅に設定されていることを特徴とする請求項1に記載の半導体装置。 - 縦型のIGBTが形成されたIGBT部(100)と、前記IGBT部に沿って備えられ、ダイオードが形成されたダイオード部(200)と、が1チップに形成された半導体装置であって、
第1導電型のドリフト層(1)と、
前記IGBT部において、前記ドリフト層の裏面側に形成された第2導電型のコレクタ領域(3)と、
前記ダイオード部において、前記ドリフト層の裏面側に形成された第1導電型のカソード領域(4)と、
前記ドリフト層の表面側の表層部において、前記IGBT部および前記ダイオード部の双方に形成された第2導電型領域(5)と、
前記IGBT部および前記ダイオード部に複数本並べられて形成され、前記第2導電型領域よりも深く形成されて前記第2導電型領域を複数に分けることで、前記IGBT部における前記第2導電型領域の少なくとも一部によってチャネル領域(5a)を構成すると共に、前記ダイオード部における前記第2導電型領域によってアノード領域(5b)を構成する複数のトレンチ(6)と、
前記IGBT部において、前記チャネル領域の表層部に前記トレンチの側面に沿って形成された第1導電型のエミッタ領域(7)と、
前記トレンチの表面に形成されたゲート絶縁膜(8)と、
前記ゲート絶縁膜の表面に形成されたゲート電極(9)と、
前記IGBT部において前記第2導電型領域に電気的に接続されると共に、前記アノード領域に電気的に接続された上部電極(11)と、
前記IGBT部において前記コレクタ領域に電気的に接続されると共に、前記ダイオード部において前記カソード領域と電気的に接続された下部電極(12)と、を備え、
前記複数のトレンチの間のうち、前記ダイオード部の前記ドリフト層において最も間隔が狭くなる部分の幅をメサ幅として、該メサ幅が0.3μm以上かつ0.8μm以下に設定され、
前記IGBT部では、前記ドリフト層において最も間隔が狭くなる部分の幅をメサ幅として、該IGBT部におけるメサ幅よりも前記ダイオード部におけるメサ幅の方が広くなっており、
前記トレンチは、開口入口側となる第1トレンチ(6a)と、前記第1トレンチと連通し、対向する側壁の間隔となる開口幅が前記第1トレンチの開口幅より広くされていると共に底部が前記ドリフト層に位置する第2トレンチ(6b)とを有し、
前記ダイオード部において、前記第2トレンチの間の間隔を該ダイオード部におけるメサ幅として、該メサ幅が0.3μm以上に設定され、
前記IGBT部および前記ダイオード部における前記複数のトレンチが配置されるピッチは等しくされ、前記第2トレンチの開口幅について、前記IGBT部よりも前記ダイオード部の方が小さくされていることを特徴とする半導体装置。 - 前記IGBT部において、前記第2トレンチの間の間隔が該IGBT部におけるメサ幅とされ、該メサ幅が0.3μm以下に設定されていることを特徴とする請求項2に記載の半導体装置。
- 縦型のIGBTが形成されたIGBT部(100)と、前記IGBT部に沿って備えられ、ダイオードが形成されたダイオード部(200)と、が1チップに形成された半導体装置であって、
第1導電型のドリフト層(1)と、
前記IGBT部において、前記ドリフト層の裏面側に形成された第2導電型のコレクタ領域(3)と、
前記ダイオード部において、前記ドリフト層の裏面側に形成された第1導電型のカソード領域(4)と、
前記ドリフト層の表面側の表層部において、前記IGBT部および前記ダイオード部の双方に形成された第2導電型領域(5)と、
前記IGBT部および前記ダイオード部に複数本並べられて形成され、前記第2導電型領域よりも深く形成されて前記第2導電型領域を複数に分けることで、前記IGBT部における前記第2導電型領域の少なくとも一部によってチャネル領域(5a)を構成すると共に、前記ダイオード部における前記第2導電型領域によってアノード領域(5b)を構成する複数のトレンチ(6)と、
前記IGBT部において、前記チャネル領域の表層部に前記トレンチの側面に沿って形成された第1導電型のエミッタ領域(7)と、
前記トレンチの表面に形成されたゲート絶縁膜(8)と、
前記ゲート絶縁膜の表面に形成されたゲート電極(9)と、
前記IGBT部において前記第2導電型領域に電気的に接続されると共に、前記アノード領域に電気的に接続された上部電極(11)と、
前記IGBT部において前記コレクタ領域に電気的に接続されると共に、前記ダイオード部において前記カソード領域と電気的に接続された下部電極(12)と、を備え、
前記複数のトレンチの間のうち、前記ダイオード部の前記ドリフト層において最も間隔が狭くなる部分の幅をメサ幅として、該メサ幅が0.3μm以上かつ0.8μm以下に設定され、
前記IGBT部では、前記ドリフト層において最も間隔が狭くなる部分の幅をメサ幅として、該IGBT部におけるメサ幅よりも前記ダイオード部におけるメサ幅の方が広くなっており、
前記トレンチは、開口入口側となる第1トレンチ(6a)と、前記第1トレンチと連通し、対向する側壁の間隔である開口幅が前記第1トレンチの開口幅より長くされていると共に底部が前記ドリフト層に位置する第2トレンチ(6b)とを有し、
前記ダイオード部において、前記第2トレンチの間の間隔を該ダイオード部における前記メサ幅とし、
前記IGBT部において、前記第2トレンチの間の間隔を該IGBT部におけるメサ幅として、
前記ダイオード部におけるメサ幅が前記IGBT部におけるメサ幅と異なる幅に設定され、
前記IGBT部および前記ダイオード部における前記複数のトレンチが配置されるピッチは等しくされ、前記第2トレンチの開口幅について、前記IGBT部よりも前記ダイオード部の方が小さくされていることを特徴とする半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015174091A JP6582762B2 (ja) | 2015-09-03 | 2015-09-03 | 半導体装置 |
US15/578,318 US10224322B2 (en) | 2015-09-03 | 2016-07-22 | Semiconductor device |
PCT/JP2016/071518 WO2017038296A1 (ja) | 2015-09-03 | 2016-07-22 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015174091A JP6582762B2 (ja) | 2015-09-03 | 2015-09-03 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017050471A JP2017050471A (ja) | 2017-03-09 |
JP6582762B2 true JP6582762B2 (ja) | 2019-10-02 |
Family
ID=58187259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015174091A Active JP6582762B2 (ja) | 2015-09-03 | 2015-09-03 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10224322B2 (ja) |
JP (1) | JP6582762B2 (ja) |
WO (1) | WO2017038296A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6702423B2 (ja) | 2016-08-12 | 2020-06-03 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN110663118B (zh) * | 2017-12-14 | 2023-07-04 | 富士电机株式会社 | 半导体装置 |
JP7456902B2 (ja) * | 2020-09-17 | 2024-03-27 | 株式会社東芝 | 半導体装置 |
JP2024037582A (ja) * | 2022-09-07 | 2024-03-19 | 株式会社東芝 | 半導体装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007043123A (ja) * | 2005-07-01 | 2007-02-15 | Toshiba Corp | 半導体装置 |
JP4857948B2 (ja) | 2006-06-26 | 2012-01-18 | 株式会社デンソー | 半導体装置の製造方法 |
DE102007003812B4 (de) * | 2007-01-25 | 2011-11-17 | Infineon Technologies Ag | Halbleiterbauelement mit Trench-Gate und Verfahren zur Herstellung |
EP2003694B1 (en) | 2007-06-14 | 2011-11-23 | Denso Corporation | Semiconductor device |
JP5045733B2 (ja) | 2008-12-24 | 2012-10-10 | 株式会社デンソー | 半導体装置 |
JP5246302B2 (ja) * | 2010-09-08 | 2013-07-24 | 株式会社デンソー | 半導体装置 |
WO2012169053A1 (ja) * | 2011-06-09 | 2012-12-13 | トヨタ自動車株式会社 | 半導体装置および半導体装置の製造方法 |
JP5821320B2 (ja) * | 2011-06-23 | 2015-11-24 | トヨタ自動車株式会社 | ダイオード |
JP5874210B2 (ja) * | 2011-06-23 | 2016-03-02 | トヨタ自動車株式会社 | ダイオード |
DE112011105681B4 (de) * | 2011-09-28 | 2015-10-15 | Toyota Jidosha Kabushiki Kaisha | Verfahren zur Herstellung einer Halbleitervorrichtung |
JP5811861B2 (ja) * | 2012-01-23 | 2015-11-11 | 株式会社デンソー | 半導体装置の製造方法 |
JP5825201B2 (ja) | 2012-03-05 | 2015-12-02 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP2013235891A (ja) | 2012-05-07 | 2013-11-21 | Denso Corp | 半導体装置 |
JP5787853B2 (ja) * | 2012-09-12 | 2015-09-30 | 株式会社東芝 | 電力用半導体装置 |
JP6158058B2 (ja) * | 2013-12-04 | 2017-07-05 | 株式会社東芝 | 半導体装置 |
JP6421570B2 (ja) * | 2013-12-20 | 2018-11-14 | 株式会社デンソー | 半導体装置 |
-
2015
- 2015-09-03 JP JP2015174091A patent/JP6582762B2/ja active Active
-
2016
- 2016-07-22 WO PCT/JP2016/071518 patent/WO2017038296A1/ja active Application Filing
- 2016-07-22 US US15/578,318 patent/US10224322B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017050471A (ja) | 2017-03-09 |
US10224322B2 (en) | 2019-03-05 |
US20180151558A1 (en) | 2018-05-31 |
WO2017038296A1 (ja) | 2017-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6421570B2 (ja) | 半導体装置 | |
JP6459791B2 (ja) | 半導体装置およびその製造方法 | |
US10930647B2 (en) | Semiconductor device including trenches formed in transistor or diode portions | |
JP6589817B2 (ja) | 半導体装置 | |
CN102197487B (zh) | 绝缘栅双极性晶体管、以及绝缘栅双极性晶体管的制造方法 | |
US9263572B2 (en) | Semiconductor device with bottom gate wirings | |
US6541818B2 (en) | Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region | |
US9054154B2 (en) | Semiconductor device | |
US9391070B2 (en) | Semiconductor device | |
WO2013179648A1 (ja) | 半導体装置 | |
JP2005340626A (ja) | 半導体装置 | |
KR101701667B1 (ko) | 트렌치 게이트 전극을 이용하는 igbt | |
JP6582762B2 (ja) | 半導体装置 | |
JP2008251620A (ja) | 半導体装置とその製造方法 | |
JP5537359B2 (ja) | 半導体装置 | |
JP2006245477A (ja) | 半導体装置 | |
US9190504B2 (en) | Semiconductor device | |
JP2015201615A (ja) | 半導体装置及びその製造方法 | |
JP5838176B2 (ja) | 半導体装置 | |
WO2022045136A1 (ja) | 半導体装置およびその製造方法 | |
US20160079350A1 (en) | Semiconductor device and manufacturing method thereof | |
JP6624101B2 (ja) | 半導体装置 | |
JP7486399B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP5875026B2 (ja) | 半導体装置 | |
KR101701240B1 (ko) | 반도체 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171002 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180529 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180726 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190208 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190507 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190704 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190806 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190819 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6582762 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |