JP6382566B2 - 半導体装置、表示装置及び電子機器 - Google Patents

半導体装置、表示装置及び電子機器 Download PDF

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Publication number
JP6382566B2
JP6382566B2 JP2014094578A JP2014094578A JP6382566B2 JP 6382566 B2 JP6382566 B2 JP 6382566B2 JP 2014094578 A JP2014094578 A JP 2014094578A JP 2014094578 A JP2014094578 A JP 2014094578A JP 6382566 B2 JP6382566 B2 JP 6382566B2
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film
oxide semiconductor
oxide
semiconductor film
light
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JP2014232317A (ja
JP2014232317A5 (ja
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欣聡 及川
欣聡 及川
岡崎　健一
健一 岡崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2014094578A 2013-05-03 2014-05-01 半導体装置、表示装置及び電子機器 Active JP6382566B2 (ja)

Priority Applications (1)

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JP2014094578A JP6382566B2 (ja) 2013-05-03 2014-05-01 半導体装置、表示装置及び電子機器

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JP2013097195 2013-05-03
JP2013097195 2013-05-03
JP2014094578A JP6382566B2 (ja) 2013-05-03 2014-05-01 半導体装置、表示装置及び電子機器

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JP2018145640A Division JP2018185541A (ja) 2013-05-03 2018-08-02 半導体装置

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JP2014232317A JP2014232317A (ja) 2014-12-11
JP2014232317A5 JP2014232317A5 (ja) 2017-06-15
JP6382566B2 true JP6382566B2 (ja) 2018-08-29

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JP2014094578A Active JP6382566B2 (ja) 2013-05-03 2014-05-01 半導体装置、表示装置及び電子機器
JP2018145640A Withdrawn JP2018185541A (ja) 2013-05-03 2018-08-02 半導体装置
JP2019217839A Active JP7068257B2 (ja) 2013-05-03 2019-12-02 半導体装置
JP2022074106A Active JP7378532B2 (ja) 2013-05-03 2022-04-28 半導体装置
JP2023186603A Active JP7601990B2 (ja) 2013-05-03 2023-10-31 表示装置
JP2024211975A Active JP7675919B2 (ja) 2013-05-03 2024-12-05 表示装置
JP2025073994A Active JP7695491B1 (ja) 2013-05-03 2025-04-28 表示装置
JP2025094649A Active JP7745120B2 (ja) 2013-05-03 2025-06-06 液晶表示装置
JP2025152546A Pending JP2025178308A (ja) 2013-05-03 2025-09-12 半導体装置

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JP2018145640A Withdrawn JP2018185541A (ja) 2013-05-03 2018-08-02 半導体装置
JP2019217839A Active JP7068257B2 (ja) 2013-05-03 2019-12-02 半導体装置
JP2022074106A Active JP7378532B2 (ja) 2013-05-03 2022-04-28 半導体装置
JP2023186603A Active JP7601990B2 (ja) 2013-05-03 2023-10-31 表示装置
JP2024211975A Active JP7675919B2 (ja) 2013-05-03 2024-12-05 表示装置
JP2025073994A Active JP7695491B1 (ja) 2013-05-03 2025-04-28 表示装置
JP2025094649A Active JP7745120B2 (ja) 2013-05-03 2025-06-06 液晶表示装置
JP2025152546A Pending JP2025178308A (ja) 2013-05-03 2025-09-12 半導体装置

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US (1) US9231002B2 (enExample)
JP (9) JP6382566B2 (enExample)

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US10008513B2 (en) 2013-09-05 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
US9766517B2 (en) 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
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