JP6253409B2 - 電力用半導体モジュール - Google Patents
電力用半導体モジュール Download PDFInfo
- Publication number
- JP6253409B2 JP6253409B2 JP2013523812A JP2013523812A JP6253409B2 JP 6253409 B2 JP6253409 B2 JP 6253409B2 JP 2013523812 A JP2013523812 A JP 2013523812A JP 2013523812 A JP2013523812 A JP 2013523812A JP 6253409 B2 JP6253409 B2 JP 6253409B2
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- semiconductor module
- sic
- switching element
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 209
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 154
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 154
- 239000000758 substrate Substances 0.000 claims description 39
- 239000003566 sealing material Substances 0.000 claims description 33
- 238000009413 insulation Methods 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 239000004945 silicone rubber Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 229920002050 silicone resin Polymers 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/4917—Crossed wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
図1は、この発明を実施するための実施の形態1における電力用半導体モジュールの断面図であり、電力用半導体モジュールの断面を簡略化して示した図である。図1において、電力用半導体モジュール100は、ベース板1、絶縁基板2、導体パターン3、Si半導体で作製されたSi製スイッチング素子4、ワイドバンドギャップ半導体であるSiC半導体で作製されたSiC製ダイオード素子5、ワイヤ配線6、主電極7,8、制御端子9,10、ケース11、絶縁封止材12などによって構成されている。Si製スイッチング素子4がSi半導体素子であり、SiC製ダイオード素子5がワイドバンドギャップ半導体素子である。
図3は、この発明を実施するための実施の形態2における電力用半導体モジュールの内部配置を示す上面図である。図2と同様に、主電極、制御端子、ケース、および絶縁封止材を外した状態で電力用半導体モジュール200を上面から見た図である。実施の形態1では、Si製スイッチング素子4が電力用半導体モジュール100の中央領域に配置され、SiC製ダイオード素子5が中央領域の両側に配置されていたが、本実施の形態では、SiC製ダイオード素子5が中央領域を囲む周辺部に配置(電力用半導体モジュール200の周辺部に配置)されている点が実施の形態1と異なる。
図4は、この発明を実施するための実施の形態3における電力用半導体モジュールの内部配置を示す上面図である。図2と同様に、主電極、制御端子、ケース、および絶縁封止材を外した状態で電力用半導体モジュール300を上面から見た図である。本実施の形態では、Si製スイッチング素子4とSiC製ダイオード素子5が別々の絶縁基板18,19上に実装されている点が実施の形態1と異なる。Si製スイッチング素子4は、スイッチング素子用絶縁基板18に、SiC製ダイオード素子5は、ダイオード素子用絶縁基板19にそれぞれ実装されている。また、Si製スイッチング素子4とSiC製ダイオード素子5が別々の絶縁基板18,19に実装されるため、スイッチング素子用絶縁基板18の導体パターンとダイオード素子用絶縁基板19の導体パターンを電気的に接続するワイヤ配線20を別途設けている。なお、ワイヤ配線を用いなくても、電気的に接続されれば良く、例えば、主電極7,8に直接ワイヤ配線にて接続したり、ワイヤ配線を使わずにブスバーを用いた配線にしたりしても良い。
図5は、この発明を実施するための実施の形態4における電力用半導体モジュールの内部配置を示す上面図である。図2と同様に、主電極、制御端子、ケース、および絶縁封止材を外した状態で電力用半導体モジュール400を上面から見た図である。本実施の形態では、Si製スイッチング素子4が実装されたスイッチング素子用絶縁基板18とSiC製ダイオード素子5が実装されたダイオード素子用絶縁基板19が別々のベース板21,22上に取り付けられている点が実施の形態3と異なる。Si製スイッチング素子4が実装されたスイッチング素子用絶縁基板18がスイッチング素子用ベース板21に取り付けられ、SiC製ダイオード素子5が実装されたダイオード素子用絶縁基板19は、ダイオード素子用ベース板22に取り付けられている。図5では、スイッチング素子用ベース板21の両側にダイオード素子用ベース板22が設けられている。樹脂などの断熱性材料23によってスイッチング素子用ベース板21とダイオード素子用ベース板22との間は接続されている。また、各ベース板21,22には、取り付け穴17が設けられている。
図6は、この発明を実施するための実施の形態5における電力用半導体モジュールの断面図であり、電力用半導体モジュールの断面を簡略化して示した図である。図6には、主電極および制御端子を示していない。本実施の形態における電力用半導体モジュール500では、ケース11内に充填される絶縁封止材を1種類とせずに、高耐熱絶縁封止材24および低耐熱絶縁封止材25の2種類を用いている点が実施の形態1〜4と異なる。SiC製ダイオード素子5の周辺には高耐熱絶縁封止材24を用い、それ以外の部分の、Si製スイッチング素子4の周辺などには高耐熱封止材24に比べて耐熱性の低い低耐熱絶縁封止材25を用いている。
Claims (9)
- それぞれ絶縁基板上に配置されたSi半導体素子とワイドバンドギャップ半導体素子とを備えた電力用半導体モジュールであって、
前記Si半導体素子は、複数の前記ワイドバンドギャップ半導体素子に囲まれるように配置され、前記Si半導体素子と前記ワイドバンドギャップ半導体素子とは同一平面上に配置されたことを特徴とする電力用半導体モジュール。 - 前記Si半導体素子はスイッチング素子であり、前記ワイドバンドギャップ半導体素子はダイオード素子であることを特徴とする請求項1に記載の電力用半導体モジュール。
- 前記Si半導体素子はダイオード素子であり、前記ワイドバンドギャップ半導体素子はスイッチング素子であることを特徴とする請求項1に記載の電力用半導体モジュール。
- 前記Si半導体素子および前記ワイドバンドギャップ半導体素子は、それぞれ別々の絶縁基板に実装されたことを特徴とする請求項1に記載の電力用半導体モジュール。
- 前記Si半導体素子が実装された絶縁基板および前記ワイドバンドギャップ半導体素子が実装された絶縁基板は、同一のベース板上に設置されたことを特徴とする請求項4に記載の電力用半導体モジュール。
- 前記Si半導体素子が実装された絶縁基板および前記ワイドバンドギャップ半導体素子が実装された絶縁基板は、それぞれ別々のベース板上に設置されたことを特徴とする請求項4に記載の電力用半導体モジュール。
- 前記ワイドバンドギャップ半導体素子が配置された領域を覆う絶縁封止材は、前記Si半導体素子が配置された領域を覆う絶縁封止材よりも高耐熱特性を有することを特徴とする請求項1から6のいずれか1項に記載の電力用半導体モジュール。
- 前記ワイドバンドギャップ半導体素子が配置された領域を覆う絶縁封止材は、フッ素系
樹脂、ポリイミド、ポリアミド、エポキシ、高耐熱シリコーン系樹脂のいずれかで形成され、前記Si半導体素子が配置された領域を覆う絶縁封止材は、シリコーンゲルまたはシリコーンゴムで形成されたことを特徴とする請求項1から7のいずれか1項に記載の電力用半導体モジュール。 - 前記ワイドバンドギャップ半導体素子は、シリコンカーバイト、窒化ガリウム系材料、またはダイヤモンドで作製されたことを特徴とする請求項1から8のいずれか1項に記載の電力用半導体モジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013523812A JP6253409B2 (ja) | 2011-07-11 | 2012-07-05 | 電力用半導体モジュール |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011153020 | 2011-07-11 | ||
JP2011153020 | 2011-07-11 | ||
JP2013523812A JP6253409B2 (ja) | 2011-07-11 | 2012-07-05 | 電力用半導体モジュール |
PCT/JP2012/004356 WO2013008424A1 (ja) | 2011-07-11 | 2012-07-05 | 電力用半導体モジュール |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016114054A Division JP6230660B2 (ja) | 2011-07-11 | 2016-06-08 | 電力用半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013008424A1 JPWO2013008424A1 (ja) | 2015-02-23 |
JP6253409B2 true JP6253409B2 (ja) | 2017-12-27 |
Family
ID=47505733
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013523812A Active JP6253409B2 (ja) | 2011-07-11 | 2012-07-05 | 電力用半導体モジュール |
JP2016114054A Active JP6230660B2 (ja) | 2011-07-11 | 2016-06-08 | 電力用半導体モジュール |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016114054A Active JP6230660B2 (ja) | 2011-07-11 | 2016-06-08 | 電力用半導体モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US9299628B2 (ja) |
EP (1) | EP2733743B1 (ja) |
JP (2) | JP6253409B2 (ja) |
CN (1) | CN103650137B (ja) |
WO (1) | WO2013008424A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112013003161T5 (de) * | 2012-07-19 | 2015-03-12 | Mitsubishi Electric Corporation | Leistungs-Halbleitermodul |
CN105247675B (zh) * | 2013-05-29 | 2019-11-15 | 三菱电机株式会社 | 半导体装置 |
WO2016009556A1 (ja) | 2014-07-18 | 2016-01-21 | 三菱電機株式会社 | 車両用補助電源装置 |
US10224810B2 (en) * | 2015-03-16 | 2019-03-05 | Cree, Inc. | High speed, efficient SiC power module |
US10680518B2 (en) | 2015-03-16 | 2020-06-09 | Cree, Inc. | High speed, efficient SiC power module |
JP6524809B2 (ja) | 2015-06-10 | 2019-06-05 | 富士電機株式会社 | 半導体装置 |
CN105871328A (zh) * | 2016-06-03 | 2016-08-17 | 浙江人和光伏科技有限公司 | 一种太阳能电池用接线盒 |
EP3279935B1 (en) | 2016-08-02 | 2019-01-02 | ABB Schweiz AG | Power semiconductor module |
WO2018232570A1 (zh) | 2017-06-19 | 2018-12-27 | 华为技术有限公司 | 一种注册及会话建立的方法、终端和amf实体 |
JP6834815B2 (ja) * | 2017-07-06 | 2021-02-24 | 株式会社デンソー | 半導体モジュール |
JP6402813B2 (ja) * | 2017-09-20 | 2018-10-10 | 三菱電機株式会社 | 半導体装置 |
JP6723469B2 (ja) * | 2017-09-28 | 2020-07-15 | 三菱電機株式会社 | 2in1型チョッパモジュール |
WO2020059285A1 (ja) * | 2018-09-20 | 2020-03-26 | 富士電機株式会社 | 半導体装置 |
WO2020170553A1 (ja) * | 2019-02-18 | 2020-08-27 | 富士電機株式会社 | 半導体装置 |
US20220238459A1 (en) * | 2019-08-20 | 2022-07-28 | Mitsubishi Electric Corporation | Semiconductor device, power conversion device and moving body |
JP7351209B2 (ja) | 2019-12-17 | 2023-09-27 | 富士電機株式会社 | 半導体装置 |
JP7484156B2 (ja) | 2019-12-18 | 2024-05-16 | 富士電機株式会社 | 半導体装置 |
JP6875588B1 (ja) | 2020-09-18 | 2021-05-26 | 住友電気工業株式会社 | 半導体装置 |
EP4120336A1 (en) * | 2021-07-15 | 2023-01-18 | Infineon Technologies Austria AG | A semiconductor power module with two different potting materials and a method for fabricating the same |
EP4270454A3 (en) * | 2022-04-28 | 2023-11-22 | Infineon Technologies AG | Power semiconductor module comprising a first and a second compartment and method for fabricating the same |
EP4270453A1 (en) * | 2022-04-28 | 2023-11-01 | Infineon Technologies AG | Method for fabricating a power semiconductor module comprising an encapsulation material with a high thermostability and power semiconductor module |
WO2024018810A1 (ja) * | 2022-07-21 | 2024-01-25 | ローム株式会社 | 半導体装置 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61112362A (ja) * | 1984-11-07 | 1986-05-30 | Hitachi Ltd | 半導体装置 |
JPH0722364Y2 (ja) | 1988-08-31 | 1995-05-24 | 株式会社村上開明堂 | ミラーの水滴除去装置 |
JPH03126055A (ja) * | 1989-10-11 | 1991-05-29 | Seiko Epson Corp | 電子写真記録装置の現像器ユニット |
JPH03126055U (ja) * | 1990-03-30 | 1991-12-19 | ||
JPH05347377A (ja) * | 1992-06-16 | 1993-12-27 | Fuji Electric Co Ltd | 半導体装置 |
JP3256636B2 (ja) * | 1994-09-15 | 2002-02-12 | 株式会社東芝 | 圧接型半導体装置 |
JP3588503B2 (ja) * | 1995-06-20 | 2004-11-10 | 株式会社東芝 | 圧接型半導体装置 |
SE9502249D0 (sv) * | 1995-06-21 | 1995-06-21 | Abb Research Ltd | Converter circuitry having at least one switching device and circuit module |
JP3433279B2 (ja) * | 1995-11-09 | 2003-08-04 | 株式会社日立製作所 | 半導体装置 |
JPH09186287A (ja) | 1995-12-28 | 1997-07-15 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
JPH11274482A (ja) * | 1998-03-20 | 1999-10-08 | Toshiba Corp | 半導体装置 |
JP2000340896A (ja) | 1999-05-27 | 2000-12-08 | Kyocera Corp | 配線基板モジュール |
JP3798184B2 (ja) | 1999-06-09 | 2006-07-19 | 矢崎総業株式会社 | パワー半導体モジュール |
JP4594477B2 (ja) | 2000-02-29 | 2010-12-08 | 三菱電機株式会社 | 電力半導体モジュール |
JP3621659B2 (ja) * | 2001-05-09 | 2005-02-16 | 三菱電機株式会社 | 電力変換システム |
JP4262453B2 (ja) * | 2002-07-15 | 2009-05-13 | 三菱電機株式会社 | 電力半導体装置 |
JP2004095670A (ja) | 2002-08-29 | 2004-03-25 | Toshiba Corp | 半導体装置 |
US7034345B2 (en) | 2003-03-27 | 2006-04-25 | The Boeing Company | High-power, integrated AC switch module with distributed array of hybrid devices |
JP2006303306A (ja) | 2005-04-22 | 2006-11-02 | Nissan Motor Co Ltd | パワーモジュール |
US20070152309A1 (en) * | 2005-12-29 | 2007-07-05 | Para Light Electronics Co., Ltd. | Light emitting diode |
JP2008060430A (ja) | 2006-08-31 | 2008-03-13 | Daikin Ind Ltd | 電力変換装置 |
JP2009021395A (ja) * | 2007-07-12 | 2009-01-29 | Panasonic Corp | 半導体装置 |
JP2009159184A (ja) | 2007-12-26 | 2009-07-16 | Hitachi Ltd | フリーホイールダイオードとを有する回路装置、及び、ダイオードを用いた回路装置とそれを用いた電力変換器 |
JP5206102B2 (ja) * | 2008-05-08 | 2013-06-12 | トヨタ自動車株式会社 | 半導体装置 |
KR101194609B1 (ko) * | 2008-07-10 | 2012-10-25 | 미쓰비시덴키 가부시키가이샤 | 전력용 반도체 모듈 |
JP2010040569A (ja) | 2008-07-31 | 2010-02-18 | Aisin Aw Co Ltd | 電子部品モジュール |
JP5169764B2 (ja) | 2008-11-19 | 2013-03-27 | トヨタ自動車株式会社 | 電力変換装置 |
JP4988784B2 (ja) * | 2009-03-30 | 2012-08-01 | 株式会社日立製作所 | パワー半導体装置 |
WO2011086896A1 (ja) * | 2010-01-15 | 2011-07-21 | 三菱電機株式会社 | 電力用半導体モジュール |
US8519519B2 (en) * | 2010-11-03 | 2013-08-27 | Freescale Semiconductor Inc. | Semiconductor device having die pads isolated from interconnect portion and method of assembling same |
-
2012
- 2012-07-05 JP JP2013523812A patent/JP6253409B2/ja active Active
- 2012-07-05 US US14/131,581 patent/US9299628B2/en active Active
- 2012-07-05 EP EP12810615.0A patent/EP2733743B1/en active Active
- 2012-07-05 WO PCT/JP2012/004356 patent/WO2013008424A1/ja active Application Filing
- 2012-07-05 CN CN201280034222.4A patent/CN103650137B/zh active Active
-
2016
- 2016-06-08 JP JP2016114054A patent/JP6230660B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP6230660B2 (ja) | 2017-11-15 |
US9299628B2 (en) | 2016-03-29 |
WO2013008424A1 (ja) | 2013-01-17 |
JPWO2013008424A1 (ja) | 2015-02-23 |
CN103650137B (zh) | 2017-09-29 |
EP2733743A4 (en) | 2015-03-18 |
JP2016167635A (ja) | 2016-09-15 |
EP2733743A1 (en) | 2014-05-21 |
US20140138707A1 (en) | 2014-05-22 |
EP2733743B1 (en) | 2022-03-16 |
CN103650137A (zh) | 2014-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6230660B2 (ja) | 電力用半導体モジュール | |
JP5147996B2 (ja) | 電力用半導体モジュール | |
US9165871B2 (en) | Semiconductor unit and semiconductor device using the same | |
US9129931B2 (en) | Power semiconductor module and power unit device | |
JP6120704B2 (ja) | 半導体装置 | |
EP3288075B1 (en) | Power semiconductor module | |
US10084388B2 (en) | Power conversion device | |
US8168985B2 (en) | Semiconductor module including a switch and non-central diode | |
US10217690B2 (en) | Semiconductor module that have multiple paths for heat dissipation | |
JP2016197677A (ja) | パワー半導体装置および車載用回転電機の駆動装置 | |
JP2008010617A (ja) | パワー半導体モジュール | |
JP2010177619A (ja) | 半導体モジュール | |
US11450647B2 (en) | Semiconductor module and semiconductor device including the same | |
JP2022162190A (ja) | 半導体装置 | |
JP7103256B2 (ja) | 半導体装置 | |
JP2024530305A (ja) | 改善された熱性能のためのパワー半導体デバイスの配置 | |
JP2013051272A (ja) | 半導体装置 | |
JP2007048991A (ja) | 電子デバイス | |
JP2005260045A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141119 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150714 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150911 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160308 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160608 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20160614 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20160902 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170526 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171011 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171128 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6253409 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |