JP5206102B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5206102B2 JP5206102B2 JP2008122296A JP2008122296A JP5206102B2 JP 5206102 B2 JP5206102 B2 JP 5206102B2 JP 2008122296 A JP2008122296 A JP 2008122296A JP 2008122296 A JP2008122296 A JP 2008122296A JP 5206102 B2 JP5206102 B2 JP 5206102B2
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- 239000004065 semiconductor Substances 0.000 title claims description 145
- 239000000463 material Substances 0.000 claims description 39
- 229910000679 solder Inorganic materials 0.000 claims description 38
- 238000001816 cooling Methods 0.000 claims description 29
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 239000003507 refrigerant Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 22
- 239000000498 cooling water Substances 0.000 description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 16
- 229910010271 silicon carbide Inorganic materials 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 230000017525 heat dissipation Effects 0.000 description 11
- 238000009413 insulation Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum carbon silicon Chemical compound 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Inverter Devices (AREA)
Description
前記第1導電層及び前記第2導電層を電気的に接続する接続部とを備え、前記第1放熱板と前記第2放熱板は分離されており、前記第2半導体素子は前記第1半導体素子よりも温度定格上限が高い半導体素子であり、前記第1放熱板及び前記第2放熱板を搭載する冷却装置をさらに備え、前記第1半導体素子は、前記冷却装置の冷媒の流路において、前記第2半導体素子よりも上流側に配設される。
図1は、実施の形態1の半導体装置が用いられる回路構成を示す図である。実施の形態1の半導体装置は、車両の駆動をアシストするための電動機と、この電動機とは別に設けられる発電機(重荷はエンジンによって回転駆動されて発電を行う)とを含むハイブリッド車両の電力変換回路に用いられる。
図5は、実施の形態2の半導体装置の断面構造を示す図である。実施の形態2の半導体装置は、第1積層体と第2積層体との間に熱絶縁部200が配設される点が実施の形態1の半導体装置と異なる。その他の構成は実施の形態1の半導体装置と同一であるため、同一の構成要素には同一符号を付し、その説明を省略する。
図6は、実施の形態3の半導体装置の断面構造を示す図である。実施の形態3の半導体装置は、第1積層体と第2積層体と高さ位置が異なる点が実施の形態2の半導体装置と異なる。その他の構成は実施の形態2の半導体装置と同一であるため、同一の構成要素には同一符号を付し、その説明を省略する。
図7は、実施の形態4の半導体装置の断面構造を示す図である。実施の形態4の半導体装置は、第1積層体に含まれる放熱板110と第2積層体に含まれる放熱板120との平面視における面積が異なるようにされている点が実施の形態2の半導体装置と異なる。その他の構成は実施の形態2の半導体装置と同一であるため、同一の構成要素には同一符号を付し、その説明を省略する。
図8は、実施の形態5の半導体装置がモジュール化されて電力変換装置群として構成された回路を示す平面図である。実施の形態5の半導体装置は、冷却器100に形成される冷却水の流路が実施の形態1の半導体装置(図4)と異なる。その他の構成は実施の形態1の半導体装置と同一であるため、同一の構成要素には同一符号を付し、その説明を省略する。
図9は、実施の形態6の半導体装置がモジュール化されて電力変換装置群として構成された回路を示す平面図である。実施の形態6の半導体装置は、隣接する放熱板110同士、及び隣接する120同士を一体化するとともに、冷却器100に形成される冷却水の流路を変更した点が実施の形態1の半導体装置(図4)と異なる。その他の構成は実施の形態1の半導体装置と同一であるため、同一の構成要素には同一符号を付し、その説明を省略する。
2 リアクトル
3 昇降圧コンバータ
4 平滑コンデンサ
5 インバータ
6 コンバータ
7 直流伝送路
10 IGBT
20 ダイオード
100 冷却器
110、110−1、110−2、110−3、110−4、110−5、110−6、120、120−1、120−2、120−3、120−4、120−5、120−6 放熱板
111、121、114、124、114a、124a 半田
112、122 絶縁基板
113、123 導電基材
130 接続板
140 側壁(筐体)
200 熱絶縁部
Claims (10)
- 第1放熱板、第1絶縁層、第1導電層、及び第1半導体素子をこの順で含む第1積層体と、
第2放熱板、第2絶縁層、第2導電層、及び前記第1半導体とは異なる半導体材料で形成される第2半導体素子をこの順で含む第2積層体と、
前記第1導電層及び前記第2導電層を電気的に接続する接続部と
を備え、前記第1放熱板と前記第2放熱板は分離されており、
前記第2半導体素子は前記第1半導体素子よりも温度定格上限が高い半導体素子であり、
前記第1放熱板及び前記第2放熱板を搭載する冷却装置をさらに備え、
前記第1半導体素子は、前記冷却装置の冷媒の流路において、前記第2半導体素子よりも上流側に配設される、半導体装置。 - 前記第2半導体素子と前記第2導電層との間を電気的に接続する半田は、前記第1半導体素子と前記第1導電層との間を電気的に接続する半田よりも耐熱性の高い半田材料で構成される、請求項1に記載の半導体装置。
- 前記第2絶縁層と前記第2放熱板との間を接続する半田は、前記第1絶縁層と前記第1放熱板との間を接続する半田よりも耐熱性の高い半田材料で構成される、請求項1に記載の半導体装置。
- 前記第1放熱板が前記冷却装置の上に搭載される第1領域の面積は、前記第2放熱板が前記冷却装置の上に搭載される第2領域の面積よりも広い、請求項1乃至3のいずれか一項に記載の半導体装置。
- 前記第1放熱板と前記第2放熱板とは、前記冷却装置への搭載位置が高さ方向で異なる、請求項1乃至4のいずれか一項に記載の半導体装置。
- 前記第1半導体と前記第2半導体とは、温度定格上限が異なる半導体材料で構成される、請求項1乃至5のいずれか一項に記載の半導体装置。
- 前記第1積層体と、前記第2積層体との間には、樹脂製の熱絶縁部が配設される、請求項1乃至6のいずれか一項に記載の半導体装置。
- 前記第1半導体素子はSi半導体素子であり、前記第2半導体素子はSiC半導体素子、GaN半導体素子、又はダイアモンド半導体素子である、請求項1乃至7のいずれか一項に記載の半導体装置。
- 前記第1半導体素子は、インバータ又はコンバータに含まれるIGBTであり、前記第2半導体素子は前記IGBTと対をなすダイオードである、請求項1乃至8のいずれか一項に記載の半導体装置。
- 前記IGBT及び前記ダイオードの組を含むインバータ又はコンバータがモジュール化された電力変換装置群として構成される、請求項9に記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008122296A JP5206102B2 (ja) | 2008-05-08 | 2008-05-08 | 半導体装置 |
PCT/JP2009/058507 WO2009136591A1 (ja) | 2008-05-08 | 2009-04-30 | 半導体装置 |
US12/990,681 US8384211B2 (en) | 2008-05-08 | 2009-04-30 | Semiconductor apparatus with improved efficiency of thermal radiation |
KR1020107024882A KR101215125B1 (ko) | 2008-05-08 | 2009-04-30 | 반도체 장치 |
CN2009801164491A CN102017140B (zh) | 2008-05-08 | 2009-04-30 | 半导体装置 |
TW098115116A TWI405320B (zh) | 2008-05-08 | 2009-05-07 | Semiconductor device |
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JP2008122296A JP5206102B2 (ja) | 2008-05-08 | 2008-05-08 | 半導体装置 |
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JP2009272482A JP2009272482A (ja) | 2009-11-19 |
JP5206102B2 true JP5206102B2 (ja) | 2013-06-12 |
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JP2008122296A Expired - Fee Related JP5206102B2 (ja) | 2008-05-08 | 2008-05-08 | 半導体装置 |
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US (1) | US8384211B2 (ja) |
JP (1) | JP5206102B2 (ja) |
KR (1) | KR101215125B1 (ja) |
CN (1) | CN102017140B (ja) |
TW (1) | TWI405320B (ja) |
WO (1) | WO2009136591A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11018076B2 (en) | 2018-04-02 | 2021-05-25 | Fuji Electric Co., Ltd. | Cooling apparatus, semiconductor module, and vehicle |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4988784B2 (ja) * | 2009-03-30 | 2012-08-01 | 株式会社日立製作所 | パワー半導体装置 |
CN102687270A (zh) * | 2010-01-15 | 2012-09-19 | 三菱电机株式会社 | 电力用半导体模块 |
JP5712760B2 (ja) * | 2010-05-06 | 2015-05-07 | 三菱電機株式会社 | 誘導加熱調理器 |
JP5790039B2 (ja) | 2010-07-23 | 2015-10-07 | 富士電機株式会社 | 半導体装置 |
DE102010039728A1 (de) * | 2010-08-25 | 2012-03-01 | Robert Bosch Gmbh | Verfahren zur Herstellung einer elektrischen Schaltung und elektrischen Schaltung |
JP5484372B2 (ja) * | 2011-02-14 | 2014-05-07 | 三菱電機株式会社 | 半導体モジュール |
CN103650137B (zh) * | 2011-07-11 | 2017-09-29 | 三菱电机株式会社 | 功率半导体模块 |
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Cited By (2)
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US11018076B2 (en) | 2018-04-02 | 2021-05-25 | Fuji Electric Co., Ltd. | Cooling apparatus, semiconductor module, and vehicle |
US11538736B2 (en) | 2018-04-02 | 2022-12-27 | Fuji Electric Co., Ltd. | Cooling apparatus, semiconductor module, and vehicle |
Also Published As
Publication number | Publication date |
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US8384211B2 (en) | 2013-02-26 |
KR20100132063A (ko) | 2010-12-16 |
US20110049535A1 (en) | 2011-03-03 |
JP2009272482A (ja) | 2009-11-19 |
TW201003886A (en) | 2010-01-16 |
WO2009136591A1 (ja) | 2009-11-12 |
CN102017140B (zh) | 2013-05-08 |
TWI405320B (zh) | 2013-08-11 |
CN102017140A (zh) | 2011-04-13 |
KR101215125B1 (ko) | 2012-12-24 |
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