CN102687270A - 电力用半导体模块 - Google Patents
电力用半导体模块 Download PDFInfo
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- CN102687270A CN102687270A CN2011800053588A CN201180005358A CN102687270A CN 102687270 A CN102687270 A CN 102687270A CN 2011800053588 A CN2011800053588 A CN 2011800053588A CN 201180005358 A CN201180005358 A CN 201180005358A CN 102687270 A CN102687270 A CN 102687270A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 192
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 109
- 239000000758 substrate Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 19
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 239000004945 silicone rubber Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 description 20
- 239000008393 encapsulating agent Substances 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000000630 rising effect Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000004706 metal oxides Chemical group 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
为了得到将由Si半导体制作的开关元件的温度上升抑制为较低且能够提高模块的冷却效率的电力用半导体模块,具备由Si半导体制作的开关元件(4)和由宽禁带半导体制作的二极管(5),二极管(5)配置在电力用半导体模块(100)的中央区域,开关元件(4)配置在电力用半导体模块(100)的中央区域的两侧或周边。
Description
技术领域
本发明涉及一种内置有开关元件和对于开关元件反并联连接的二极管的电力用半导体模块。
背景技术
内置有开关元件和对于开关元件反并联连接的二极管的电力用半导体模块广泛应用于进行直流-交流、直流-直流等转换的电力转换器等。以往,在开关元件、二极管中使用Si(硅)半导体,但是最近推进应用以SiC(碳化硅)半导体为代表的宽禁带(Wide Band Gap)半导体的开发。SiC半导体与Si半导体相比具有低损耗、能够进行高温动作、高耐压这种特征,通过使用SiC半导体,能够实现电力用半导体模块的小型化、低损耗化,而且,能够实现安装在电力用半导体模块上的冷却器的小型化、使用了电力用半导体模块的电力转换器的高效率化。
通过在开关元件和二极管这双方中使用SiC半导体,如上所述的效果变大。然而,开关元件与二极管相比构造复杂,因此关于在开关元件中使用SiC半导体,还留有制造上的课题。为此,提出了如下半导体模块(例如参照专利文献1):在开关元件中使用Si半导体而仅在二极管中使用SiC半导体,在同一金属基底之上配置有Si制开关元件和SiC制二极管。
专利文献1:日本特开2004-95670号公报(第10-11页、第8图)
发明内容
发明要解决的问题
在将Si制开关元件和SiC制二极管配置在同一电力用半导体模块内的情况下,与Si制开关元件相比,SiC制二极管的损耗更小,能够进行高温下的动作,因此需要考虑其特性来设为在热学上最佳的配置、构造。在专利文献1所示的现有的半导体模块中,Si制开关元件和SiC制二极管在左右分开配置。Si制开关元件和SiC制二极管配置在不同的绝缘基板之上,但是在配置多个Si制开关元件的情况下,存在如下问题:由于Si制开关元件彼此的热干扰而配置在电力用半导体模块的中央区域上的Si制开关元件的温度有可能上升。
本发明是为了解决如上所述的问题而完成的,用于得到一种如下电力用半导体模块:在将由Si半导体制作的开关元件和由能够在更高的温度下利用的宽禁带半导体制作的二极管配置在同一电力用半导体模块内的情况下,由Si半导体制作的开关元件的温度上升被抑制为较低,冷却效率高。
用于解决问题的方案
本发明所涉及的电力用半导体模块具备Si半导体元件和宽禁带半导体元件,宽禁带半导体元件配置在电力用半导体模块的中央区域,Si半导体元件配置在中央区域的两侧或周边。
发明的效果
在本发明所涉及的电力用半导体模块中,宽禁带半导体元件配置在电力用半导体模块的中央区域,Si半导体元件配置在中央区域的两侧或周边,因此,Si半导体元件的温度上升抑制为较低,能够提高电力用半导体模块的冷却效率。
附图说明
图1是本发明的实施方式1中的电力用半导体模块的截面图。
图2是表示本发明的实施方式1中的电力用半导体模块的内部配置的俯视图。
图3是表示本发明的实施方式2中的电力用半导体模块的内部配置的俯视图。
图4是表示本发明的实施方式3中的电力用半导体模块的内部配置的俯视图。
图5是表示本发明的实施方式4中的电力用半导体模块的内部配置的俯视图。
图6是本发明的实施方式5中的电力用半导体模块的截面图。
(附图标记说明)
1:底板;2:绝缘基板;3:导体图案;4:Si制开关元件;5:SiC制二极管;6、20:电线布线;7、8:主电极;9、10:控制端子;11:壳体;12:绝缘密封材料;13、14:主电极安装点;15、16:控制端子安装点;17:安装孔;18:开关元件用绝缘基板;19:二极管用绝缘基板;21:开关元件用底板;22:二极管用底板;23:绝热性材料;24:高耐热绝缘密封材料;25:低耐热绝缘密封材料;100、200、300、400、500:电力用半导体模块。
具体实施方式
实施方式1.
图1是用于实施本发明的实施方式1中的电力用半导体模块的截面图,是简化示出电力用半导体模块的截面的图。在图1中,电力用半导体模块100由底(base)板1、绝缘基板2、导体图案3、由Si半导体制作的Si制开关元件4、由作为宽禁带半导体的SiC半导体制作的SiC制二极管5、电线布线6、主电极7、8、控制端子9、10、壳体11、绝缘密封材料12等构成。Si制开关元件4是Si半导体元件,SiC制二极管5是宽禁带半导体元件。
底板1用于将电力用半导体模块100安装到外部的冷却器,在底板1的一面(图1中是下侧)从外部安装未图示的冷却器。在电力用半导体模块100内部产生的热经由底板1放出到外部。在底板1的另一面(图1中是上侧)通过焊锡等设置有绝缘基板2。绝缘基板2的一面(图1中是下侧)是安装在底板1上的面,在绝缘基板2的另一面(图1中是上侧)形成有作为电流路径的导体图案3。
在导体图案3之上安装有Si制开关元件4和SiC制二极管5。Si制开关元件4只要是能够进行接通/断开控制的半导体元件即可,例如使用IGBT(Insulated Gate Bipolar Transistor:绝缘栅双极型晶体管)、MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor:金属氧化物半导体场效应晶体管)等。另外,作为SiC制二极管5,例如使用肖特基势垒二极管(Schottky Barrier Diode)、PiN(p-intrinsic-n)二极管等。
Si制开关元件4和SiC制二极管5反并联地电连接,在例如使用IGBT作为Si制开关元件4的情况下,IGBT的集电极与SiC制二极管5的阴极经由导体图案3电连接。在Si制开关元件4和SiC制二极管5上施以电线布线6,经由导体图案3和电线布线6与主电极7、8和控制端子9、10电连接。主电极7、8连接到未图示的外部电路,构成电力转换器等主电路。从外部电路对控制端子9、10提供对Si制开关元件4进行接通/断开控制的控制信号。此外,在图1中为了便于理解电力用半导体模块内的结构,简化主电极7、8以及控制端子9、10来记载。
Si制开关元件4、SiC制二极管5等构成电力用半导体模块100的部件类收纳在壳体11内。而且,为了保证电力用半导体模块100内部的绝缘,在壳体11内填充有绝缘密封材料12。
图2是表示在从图1所示的状态除去主电极7、8、控制端子9、10、壳体11以及绝缘密封材料12的状态下从上面观察电力用半导体模块100时的电力用半导体模块的内部配置的俯视图。在图2中,附加了与图1相同的标记的部件是相同或者与其相当的部件,这在说明书的全文中是通用的。
图1所示的主电极7连接在导体图案3之上的主电极安装点13,主电极8、控制端子9、10分别连接在主电极安装点14、控制端子安装点15、16,经由导体图案3和电线布线6与Si制开关元件4、SiC制二极管5电连接。另外,在底板1上设置有安装孔17,电力用半导体模块100利用安装孔17安装在外部的冷却器等。
Si制开关元件4、SiC制二极管5在电力用半导体模块100中分别配置有多个(在图2中,Si制开关元件4为16个,SiC制二极管5为32个)。在图2中,多个SiC制二极管5集中配置在电力用半导体模块100的中央区域。本实施方式中的中央区域是指从上面观察电力用半导体模块100时分割左右的带状区域。多个Si制开关元件4在该中央区域的两侧区域分开配置(配置在电力用半导体模块100的两侧)。也就是说,SiC制二极管5被配置成处于多个Si制开关元件4之间。作为一例,在图2中,在电力用半导体模块100的两侧分开配置有各8个Si制开关元件4,在其间配置有32个SiC制二极管5。
一般,在将开关元件、二极管等半导体元件多数安装在同一电力用半导体模块内的情况下,即使各半导体元件的损耗相同,安装在电力用半导体模块的中央区域的半导体元件由于难以散热,因此温度容易上升。另一方面,安装在电力用半导体模块的两侧或周边部的半导体元件容易散热,温度难以上升。因此,例如在二极管中使用与开关元件相同的Si半导体来安装在电力用半导体模块的中央区域的情况下,存在二极管的温度过度上升的问题。然而,SiC制二极管具有低损耗这一特征,因此如本实施方式那样即使将SiC制二极管5配置在电力用半导体模块100的中央区域也能够抑制温度上升。另外,SiC制二极管5能够在高温下利用,因此即使配置在温度容易上升的中央区域也能够正常地动作。并且,由于将Si制开关元件4配置在中央区域的两侧,因此容易从Si制开关元件4散热,能够抑制温度上升。因此,例如能够实现设置于外部的冷却器的小型化、能够通过减小Si制开关元件4的配置区域来使电力用半导体模块100本身小型化。
此外,SiC制二极管5具有能够在高温下利用的特征,在高温下利用的情况下,例如具有能够减小二极管的配置区域等的优点。但是,并不一定需要在高温下利用,也可以在与Si制开关元件4相同的温度范围内使用。在该情况下损耗也低,因此能够配置在电力用半导体模块100的中央区域。另外,对于绝缘密封材料、焊锡等二极管周边部件,也可以使用能够在与Si制开关元件4相同的温度范围内使用的部件。另外,由于不会在高温下利用,因此对于热循环的可靠性也提高。
另外,在电力用半导体模块100的中央区域配置SiC制二极管5,在两侧配置Si制开关元件4,因此SiC制二极管5的散热性变差,Si制开关元件4的散热性变好。因此,不需要为了使Si制开关元件4的散热性优于SiC制二极管5的散热性而设置使Si制开关元件4正下方的冷却性能高于SiC制二极管5正下方的冷却性能那样的特殊的冷却器,能够在各自所能够使用的温度范围内使用,因此通用性变高。
在本实施方式中的电力用半导体模块100中,在相同的底板1、绝缘基板2之上配置有Si制开关元件4和SiC制二极管5。在将Si制开关元件、SiC制二极管分别配置在不同的绝缘基板、底板之上的情况下,具有抑制热干扰的影响的优点。然而,考虑到开关元件的损耗变大的运行条件与二极管的损耗变大的运行条件不同的情况。例如在将电力用半导体模块作为逆变器使用于电动机驱动的情况下,在从逆变器侧向电动机侧供给能量的动力运行中,与二极管相比开关元件的通电时间更长,开关元件的损耗变大,在从电动机侧向逆变器侧供给能量的再生运行中,与开关元件相比二极管的通电时间更长,二极管的损耗变大。
因此,在与SiC制二极管5相比Si制开关元件4的损耗大的条件下,来自SiC制二极管5的热干扰的影响小,从Si制开关元件4能够使用绝缘基板2、底板1整体来散热,因此在相同的底板1、绝缘基板2之上配置Si制开关元件4和SiC制二极管5的情况下电力用半导体模块100整体的散热性提高。另外,在相同的底板1、绝缘基板2之上配置Si制开关元件4和SiC制二极管5的情况下,还具有部件件数减少、布线也容易的优点。
本实施方式中的电力用半导体模块的结构是一例,只要将SiC制二极管5配置在电力用半导体模块100的中央区域而将Si制开关元件4配置在中央区域的两侧即可,因此对构成电力用半导体模块100的其它部件类的配置等没有特别的限制。例如关于主电极7、8、控制电极9、10与Si制开关元件4、SiC制二极管5之间的连接,也只要电连接即可,可以直接通过电线布线连接到主电极7、8,或者也可以不使用电线布线而进行使用母线(bus bar)的布线。在这种情况下,有可能使电力用半导体模块100内部的Si制开关元件4、SiC制二极管5的配置多少发生变化,但是只要将SiC制二极管5配置在电力用半导体模块100的中央区域而将Si制开关元件4配置在中央区域的两侧即可。
如上所述,将由作为低损耗且能够在高温下利用的宽禁带半导体的SiC半导体制作的SiC制二极管5配置在温度容易上升的电力用半导体模块100的中央区域,将由Si半导体制作的Si制开关元件4配置在难以成为高温的电力用半导体模块100的两侧,因此Si制开关元件4的温度上升被抑制为较低,能够提高电力用半导体模块100的冷却效率。
此外,在本实施方式中,说明了将SiC制二极管5配置在电力用半导体模块100的中央区域而将Si制开关元件4配置在电力用半导体模块100的两侧的情况。然而,也可以使用由SiC半导体制作的SiC制开关元件以及由Si半导体制作的Si制二极管,将SiC制开关元件配置在电力用半导体模块的中央区域,将Si制二极管配置在电力用半导体的两侧。在这种情况下,与SiC制开关元件和Si制二极管的配置相应地,导体图案、电线布线、主电极、控制端子等也被适当地配置。这样,将作为低损耗且能够在高温下利用的宽禁带半导体的SiC制开关元件配置在温度容易上升的电力用半导体模块的中央区域,将Si制二极管配置在难以成为高温的电力半导体模块的两侧,因此Si制二极管的温度上升被抑制为较低,能够提高电力用半导体模块的冷却效率。
实施方式2.
图3是表示用于实施本发明的实施方式2中的电力用半导体模块的内部配置的俯视图。与图2同样地,是在除去主电极、控制端子、壳体以及绝缘密封材料的状态下从上面观察电力用半导体模块200的图。在实施方式1中,SiC制二极管5配置在电力用半导体模块100的中央区域,Si制开关元件4配置在中央区域的两侧,但是在本实施方式中,与实施方式1的不同之处在于,Si制开关元件4配置在包围中央区域的周边部(配置在电力用半导体模块200的周边部)。
Si制开关元件4、SiC制二极管5在电力用半导体模块200中分别配置有多个(在图3中,Si制开关元件4为16个,SiC制二极管5为32个)。在图3中,多个SiC制二极管5集中配置在电力用半导体模块200的中央区域。本实施方式中的中央区域是指从上面观察电力用半导体模块200时中心部的区域。多个Si制开关元件4配置在包围该中央区域的周边部。也就是说,以被Si制开关元件4包围的方式将SiC制二极管5配置在电力用半导体模块200的中央区域。作为一例,在图3中,以形成外周的方式配置有16个Si制开关元件4,以被16个Si制开关元件4包围的方式配置有32个SiC制二极管5。此外,随着Si制开关元件4和SiC制二极管5的配置变更,电线布线6等的布线图案也被变更。
根据本实施方式,使用具有低损耗、能够在高温下利用的特征的SiC制二极管5,因此能够将SiC制二极管配置在电力用半导体模块200的中央区域并将所有的Si制开关元件4配置在中央区域的周边部。因此,与实施方式1的结构相比Si制开关元件4的散热性更好,更能够抑制Si制开关元件4的温度上升。此外,SiC制二极管5具有能够在高温下利用的特征,但是不一定需要在高温下使用,也可以在与Si制开关元件4相同的温度范围内使用。
本实施方式中的电力用半导体模块的结构是一例,只要将SiC制二极管5配置在电力用半导体模块200的中央区域而将Si制开关元件4配置在包围中央区域的周边部即可,因此与实施方式1同样地对构成电力用半导体模块200的其它部件类的配置等没有特别的限制。例如关于主电极7、8、控制电极9、10与Si制开关元件4、SiC制二极管5之间的连接,也只要电连接即可,可以直接通过电线布线连接到主电极7、8,或者也可以不使用电线布线而进行使用母线的布线。在这种情况下,有可能使电力用半导体模块200内部的Si制开关元件4、SiC制二极管5的配置多少发生变化,但是只要将SiC制二极管5配置在电力用半导体模块200的中央区域而将Si制开关元件4配置在包围中央区域的周边部即可。
如上所述,由作为低损耗且能够在高温下利用的宽禁带半导体的SiC半导体制作的SiC制二极管5配置在温度容易上升的电力用半导体模块200的中央区域,将由Si半导体制作的Si制开关元件4配置在难以成为高温的电力用半导体模块200的周边部,因此Si制开关元件4的温度上升被抑制为较低,能够提高电力用半导体模块200的冷却效率。
此外,在本实施方式中,说明了将SiC制二极管5配置在电力用半导体模块200的中央区域而将Si制开关元件4配置在电力用半导体模块200的周边部的情况。然而,也可以使用由SiC半导体制作的SiC制开关元件以及由Si半导体制作的Si制二极管,将SiC制开关元件配置在电力用半导体模块的中央区域,将Si制二极管配置在电力用半导体的周边部。在这种情况下,与SiC制开关元件和Si制二极管的配置相应地,导体图案、电线布线、主电极、控制端子等也被适当地配置。这样,将作为低损耗且能够在高温下利用的宽禁带半导体的SiC制开关元件配置在温度容易上升的电力用半导体模块的中央区域,将Si制二极管配置在难以成为高温的电力半导体模块的周边部,因此Si制二极管的温度上升被抑制为较低,能够提高电力用半导体模块的冷却效率。
实施方式3.
图4是表示用于实施本发明的实施方式3中的电力用半导体模块的内部配置的俯视图。与图2同样地,是在除去主电极、控制端子、壳体以及绝缘密封材料的状态下从上面观察电力用半导体模块300的图。在本实施方式中,与实施方式1的不同之处在于,Si制开关元件4和SiC制二极管5安装在不同的绝缘基板18、19之上。Si制开关元件4被安装在开关元件用绝缘基板18上,SiC制二极管5被安装在二极管用绝缘基板19上。另外,由于Si制开关元件4和SiC制二极管5被安装在不同的绝缘基板18、19上,因此另行设置有将开关元件用绝缘基板18的导体图案与二极管用绝缘基板19的导体图案电连接的电线布线20。此外,也可以不使用电线布线,只要电连接即可,例如可以直接通过电线布线连接到主电极7、8,或者也可以不使用电线布线而进行使用母线的布线。
在如实施方式1、2中的电力用半导体模块那样将Si制开关元件4和SiC制二极管5安装在同一绝缘基板2之上的情况下,如果Si制开关元件4和SiC制二极管5在同时发热的条件下动作,则由于Si制开关元件4和SiC制二极管5的热干扰而温度上升。本实施方式用于减轻这种热干扰的影响,将Si制开关元件4和SiC制二极管5安装在不同的绝缘基板18、19之上,因此Si制开关元件4难以受到来自SiC制二极管5的热干扰的影响,能够抑制Si制开关元件4的温度上升。
此外,开关元件用绝缘基板18和二极管用绝缘基板19也可以是相同的材质,在高温下利用SiC制二极管5的情况下,也可以考虑耐热性、热循环性来使用不同的材质的部件。
如上所述,Si制开关元件4和SiC制二极管5被安装在不同的绝缘基板18、19之上,因此Si制开关元件4难以受到来自SiC制二极管5的热干扰的影响,能够抑制Si制开关元件4的温度上升。
实施方式4.
图5是用于实施本发明的实施方式4中的电力用半导体模块的截面图,是简化示出电力用半导体模块的截面的图。与图2同样地,是在除去主电极、控制端子、壳体以及绝缘密封材料的状态下从上面观察电力用半导体模块400的图。在本实施方式中,与实施方式3的不同之处在于,安装有Si制开关元件4的开关元件用绝缘基板18和安装有SiC制二极管5的二极管用绝缘基板19被安装在不同的底板21、22之上。安装有Si制开关元件4的开关元件用绝缘基板18被安装在开关元件用底板21,安装有SiC制二极管5的二极管用绝缘基板19被安装在二极管用底板22。在图5中,在二极管用底板22的两侧设置有开关元件用底板21。通过树脂等绝热性材料23来连接开关元件用底板21与二极管用底板22之间。另外,在各底板21、22中设置有安装孔17。
在如实施方式1~3中的电力用半导体模块那样Si制开关元件4和SiC制二极管5安装在同一底板1之上的情况下,如果Si制开关元件4和SiC制二极管5在同时发热的条件下动作,则由于Si制开关元件4和SiC制二极管5的热干扰而温度上升。本实施方式用于减轻这种热干扰的影响,将Si制开关元件4和SiC制二极管5安装在不同的底板21、22之上,因此Si制开关元件4难以受到来自SiC制二极管5的热干扰的影响,与实施方式3所示的电力用半导体模块300相比,更能够抑制Si制开关元件4的温度上升。
如上所述,Si制开关元件4和SiC制二极管5安装在不同的底板21、22之上,因此Si制开关元件4难以受到来自SiC制二极管5的热干扰的影响,能够抑制Si制开关元件4的温度上升。
实施方式5.
图6是用于实施本发明的实施方式5中的电力用半导体模块的截面图,是简化示出电力用半导体模块的截面的图。在图6中未示出主电极和控制端子。在本实施方式中的电力用半导体模块500中,与实施方式1~4的不同之处在于,不将填充在壳体11内的绝缘密封材料设为一种,而是使用高耐热绝缘密封材料24和低耐热绝缘密封材料25这两种。在SiC制二极管5的周边使用高耐热绝缘密封材料24,在Si制开关元件4的周边等除此以外的部分使用与高耐热密封材料24相比耐热性低的低耐热绝缘密封材料25。
作为高耐热绝缘密封材料24,例如使用氟系树脂(fluorocarbonresin)、聚酰亚胺、聚酰胺、环氧树脂、进而是提高交联密度或添加金属氧化物而成的提高耐热性的硅酮系树脂。作为低耐热绝缘密封材料25,使用硅酮凝胶(silicone gel)、硅酮橡胶等。期望高耐热绝缘密封材料24覆盖SiC制二极管5和连接于SiC制二极管5的电线布线6,为了确保对于热循环的可靠性,期望电线布线不横跨不同的两种绝缘密封材料24、25之间。
这样,通过在SiC制二极管5的周边使用高耐热绝缘密封材料24,能够在高温下利用SiC制二极管5。另外,在Si制开关元件4的周边等除此之外的部分使用低耐热绝缘密封材料25,低耐热绝缘密封材料25与高耐热绝缘密封材料24相比廉价,因此与仅使用高耐热绝缘密封材料24的情况相比能够抑制制造成本。另外,也有时根据氟系树脂、聚酰亚胺、聚酰胺等高耐热绝缘密封材料而难以实现厚膜化,通过如本实施方式那样将高耐热绝缘密封材料24限定为仅覆盖SiC制二极管5周边,还能够使用难以实现厚膜化的高耐热绝缘密封材料。
图6示出了Si制开关元件4和SiC制二极管5安装在不同的底板21、22、绝缘基板18、19的情况,但是在如实施方式1~3中的电力用半导体模块那样Si制开关元件4和SiC制二极管5安装在安装于同一底板1的同一绝缘基板2上的情况、底板1相同但安装在不同的绝缘基板18、19之上的情况等的、Si制开关元件和SiC制二极管的配置等不同的情况下也能够应用。
如上所述,覆盖配置有SiC制二极管5的区域的高耐热绝缘密封材料24与覆盖配置有Si制开关元件4的区域的低耐热绝缘密封材料25相比具有高耐热特性,因此能够在高温下利用SiC制二极管5。
此外,在所有的实施方式中,说明了在二极管中使用SiC半导体的情况,但是,只要二极管与Si制开关元件相比具有低损耗、能够在高温下利用的特征即可,例如也可以在二极管中使用氮化镓系材料或金刚石等其它宽禁带半导体。
Claims (11)
1.一种电力用半导体模块,具备Si半导体元件和宽禁带半导体元件,其特征在于,
所述宽禁带半导体元件配置在所述电力用半导体模块的中央区域,
所述Si半导体元件配置在所述中央区域的两侧或周边。
2.一种电力用半导体模块,具备Si半导体元件和宽禁带半导体元件,其特征在于,
所述宽禁带半导体元件配置成处于多个所述Si半导体元件之间,或者配置成被多个所述Si半导体元件所包围。
3.根据权利要求1或2所述的电力用半导体模块,其特征在于,
所述Si半导体元件是开关元件,所述宽禁带半导体元件是二极管。
4.根据权利要求1或2所述的电力用半导体模块,其特征在于,
所述Si半导体元件是二极管,所述宽禁带半导体元件是开关元件。
5.根据权利要求1~4中的任一项所述的电力用半导体模块,其特征在于,
所述Si半导体元件和所述宽禁带半导体元件安装于同一绝缘基板。
6.根据权利要求1~4中的任一项所述的电力用半导体模块,其特征在于,
所述Si半导体元件和所述宽禁带半导体元件分别安装于不同的绝缘基板。
7.根据权利要求5或6所述的电力用半导体模块,其特征在于,
安装有所述Si半导体元件的绝缘基板和安装有所述宽禁带半导体元件的绝缘基板被设置在同一底板之上。
8.根据权利要求6所述的电力用半导体模块,其特征在于,
安装有所述Si半导体元件的绝缘基板和安装有所述宽禁带半导体元件的绝缘基板分别被设置在不同的底板之上。
9.根据权利要求1~8中的任一项所述的电力用半导体模块,其特征在于,
覆盖配置有所述宽禁带半导体元件的区域的绝缘密封材料具有比覆盖配置有所述Si半导体元件的区域的绝缘密封材料高的耐热特性。
10.根据权利要求1~8中的任一项所述的电力用半导体模块,其特征在于,
覆盖配置有所述宽禁带半导体元件的区域的绝缘密封材料由氟系树脂、聚酰亚胺、聚酰胺、环氧树脂、高耐热硅酮系树脂中的任一种形成,覆盖配置有所述Si半导体元件的区域的绝缘密封材料由硅酮凝胶或硅酮橡胶形成。
11.根据权利要求1~10中的任一项所述的电力用半导体模块,其特征在于,
所述宽禁带半导体元件是由碳化硅、氮化镓系材料或金刚石制作的。
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Cited By (4)
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CN104064529A (zh) * | 2013-03-22 | 2014-09-24 | 英飞凌科技股份有限公司 | 半导体器件、半导体模块以及制造半导体器件和半导体模块的方法 |
CN105981274B (zh) * | 2014-02-11 | 2018-11-06 | 三菱电机株式会社 | 电力用半导体模块 |
CN104835794A (zh) * | 2015-03-23 | 2015-08-12 | 广东美的制冷设备有限公司 | 智能功率模块及其制造方法 |
CN104835794B (zh) * | 2015-03-23 | 2018-02-02 | 广东美的制冷设备有限公司 | 智能功率模块及其制造方法 |
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KR20120101121A (ko) | 2012-09-12 |
WO2011086896A1 (ja) | 2011-07-21 |
EP2525404A4 (en) | 2014-01-01 |
JP5147996B2 (ja) | 2013-02-20 |
CN109166833B (zh) | 2022-04-08 |
EP2525404B1 (en) | 2022-03-16 |
US9129885B2 (en) | 2015-09-08 |
CN109166833A (zh) | 2019-01-08 |
US20120286292A1 (en) | 2012-11-15 |
EP2525404A1 (en) | 2012-11-21 |
KR101375502B1 (ko) | 2014-03-18 |
JPWO2011086896A1 (ja) | 2013-05-16 |
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