CN109671687B - 功率模块 - Google Patents
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Abstract
本发明得到功率模块,其能够减小所安装的散热鳍片的晃动,将由晃动引起的应力分散。向功率芯片(5a~5f)连接有功率端子(2)。向对功率芯片(5a~5f)进行控制的控制芯片(6、7)连接有控制端子(3)。将功率芯片(5a~5f)、控制芯片(6、7)、功率端子(2)以及控制端子(3)由模塑树脂覆盖而构成封装件(1)。在封装件(1)的没有功率端子(2)以及控制端子(3)凸出的彼此相对的侧面,分别设置有用于安装散热鳍片(10)的第1及第2凹部(4a、4b)。第1及第2凹部(4a、4b)不相对而是配置于彼此错开的位置。
Description
技术领域
本发明涉及功率模块。
背景技术
使用着一种功率模块,该功率模块在封装件设置凹部而能够实现散热鳍片的安装。就以往的功率模块而言,将2个凹部在封装件的宽度或者长度方向的中央线之上对称地配置(例如,参照专利文献1)。
专利文献1:日本特开平06-310632号公报
如果在以往的功率模块安装散热鳍片,则存在下述问题,即,散热鳍片晃动,由该晃动引起的应力对封装件造成损伤。
发明内容
本发明就是为了解决上述课题而提出的,其目的在于,得到能够减小所安装的散热鳍片的晃动,将由晃动引起的应力分散的功率模块。
本发明涉及的功率模块的特征在于,具备:功率芯片;控制芯片,其对所述功率芯片进行控制;功率端子,其与所述功率芯片连接;控制端子,其与所述控制芯片连接;以及封装件,其通过模塑树脂覆盖所述功率芯片、所述控制芯片、所述功率端子以及所述控制端子,在所述封装件的没有所述功率端子以及所述控制端子凸出的彼此相对的侧面,分别设置有用于安装散热鳍片的第1及第2凹部,所述第1及第2凹部不相对而是配置于彼此错开的位置。
发明的效果
在本发明中,在封装件的侧面设置有第1及第2凹部。由此,能够实现散热鳍片的安装,能够期待散热性的改善。另外,第1及第2凹部不相对而是配置于彼此错开的位置。由此,能够减小所安装的散热鳍片的晃动,将由晃动引起的应力分散。
附图说明
图1是表示实施方式涉及的功率模块的俯视图。
图2是表示实施方式涉及的功率模块的侧视图。
图3是表示实施方式涉及的功率模块的内部构造的俯视图。
图4是沿图3的Ⅰ-Ⅱ的剖视图。
图5是实施方式涉及的功率模块的电路图。
图6是表示实施方式涉及的安装有散热鳍片的功率模块的侧视图。
图7是沿图6的Ⅰ-Ⅱ的剖视图。
图8是表示实施方式涉及的安装有散热鳍片的功率模块的变形例的侧视图。
图9是沿图8的Ⅰ-Ⅱ的剖视图。
标号的说明
1封装件,2功率端子,3控制端子,4a第1凹部,4b第2凹部,5a~5f功率芯片,6HVIC(控制芯片),7LVIC(控制芯片),8接地端子(内部电极),9电力端子(内部电极),10散热鳍片
具体实施方式
图1是表示实施方式涉及的功率模块的俯视图。图2是表示实施方式涉及的功率模块的侧视图。功率端子2以及控制端子3从封装件1的彼此相对的侧面凸出。在封装件1的没有功率端子2以及控制端子3凸出的侧面分别设置有第1及第2凹部4a、4b。第1及第2凹部4a、4b不相对而是配置于彼此错开的位置。
图3是表示实施方式涉及的功率模块的内部构造的俯视图。图4是沿图3的Ⅰ-Ⅱ的剖视图。图5是实施方式涉及的功率模块的电路图。
6个功率芯片5a~5f安装于金属的框架之上。HVIC 6以及LVIC7安装于接地端子8之上。功率芯片5a~5c是被施加高电压的高压功率芯片。功率芯片5d~5f是被施加的电压比高压功率芯片低的低压功率芯片。HVIC 6是对功率芯片5a~5c进行控制的高压控制芯片。LVIC7是对功率芯片5d~5f进行控制的低压控制芯片。功率芯片5a~5f是将IGBT和FWD内置于同一芯片的RCIGBT(Reverse Conducting Insulated Gate Bipolar Transistor)。此外,功率芯片5a~5f既可以是MOSFET,也可以包含电容器等。
功率端子2、控制端子3、功率芯片5a~5f、HVIC 6、LVIC 7、接地端子8以及电力端子9由模塑树脂覆盖,构成封装件1。封装件1内的各结构分别由导线连接。
图6是表示实施方式涉及的安装有散热鳍片的功率模块的侧视图。图7是沿图6的Ⅰ-Ⅱ的剖视图。将具有弹性的散热鳍片10的爪11a、11b分别嵌合至第1及第2凹部4a、4b而将散热鳍片10安装至封装件1。封装件1具有与散热鳍片10的主面接触的第1主面以及与第1主面相对的第2主面。第1及第2凹部4a、4b设置于第2主面侧。在功率模块安装于基板的情况下,第2主面成为基板侧。
图8是表示实施方式涉及的安装有散热鳍片的功率模块的变形例的侧视图。图9是沿图8的Ⅰ-Ⅱ的剖视图。将具有弹性的夹具12a、12b嵌合至第1及第2凹部4a、4b和散热鳍片10而将散热鳍片10安装至封装件1。
在本实施方式中,在封装件1的侧面设置有第1及第2凹部4a、4b。由此,能够实现散热鳍片10的安装,能够期待散热性的改善。另外,第1及第2凹部4a、4b不相对而是配置于彼此错开的位置。由此,能够减小所安装的散热鳍片10的晃动,将由晃动引起的应力分散。
另外,优选封装件1在安装散热鳍片10的第1主面具有凸起的翘曲。由此,能够在安装有散热鳍片10时使封装件1的翘曲减小,同时使封装件1与散热鳍片10紧密接触。
以往设想的是如IC封装件这样的在低电压下使用的半导体装置,因此,在设置有用于安装散热鳍片的凹部的侧面,露出了内部电极。但是,由于所安装的散热鳍片与内部电极接触而无法确保绝缘,所以以往的结构无法应用于施加高电压的功率模块。与此相对,在本实施方式中,在设置有用于安装散热鳍片10的第1及第2凹部4a、4b的侧面,电力端子9以及控制端子3等内部电极没有从封装件1露出。由此,能够防止接地端子8以及电力端子9与散热鳍片10接触而成为同电位。因此,能够在散热鳍片10浮置(floating)的状态下驱动模块,在使用功率模块时能够将散热鳍片10与外部电源的接地分开使用。
如果第1及第2凹部4a、4b位于功率芯片5a~5f或者导线所在的部分,则产生与高压部的绝缘距离不足而导致介电击穿、导线露出等问题。因此,将第1凹部4a配置于配备了大的芯片焊盘、导线不会发生干涉的功率芯片5a~5c侧。另外,在没有施加高电压的LVIC 7侧配置第2凹部4b。由此,能够配置第1及第2凹部4a、4b而不使封装件增大,因此,能够使封装件小型化。
此外,功率芯片5a~5f不限于由硅形成,也可以由与硅相比带隙更大的宽带隙半导体形成。宽带隙半导体例如是碳化硅、氮化镓类材料或者金刚石。这样的由宽带隙半导体形成的功率芯片,由于耐电压性、容许电流密度高,所以能够小型化。通过使用该实现了小型化的功率芯片,从而能够使组装有该功率芯片的功率模块也小型化、高集成化。另外,由于功率芯片的耐热性高,所以能够使散热鳍片10小型化,能够将水冷部空冷化,因此能够进一步将功率模块小型化。另外,由于功率芯片的电力损耗低且高效,因此能够使功率模块高效化。
Claims (7)
1.一种功率模块,其特征在于,具备:
功率芯片;
控制芯片,其对所述功率芯片进行控制;
功率端子,其与所述功率芯片连接;
控制端子,其与所述控制芯片连接;以及
封装件,其通过模塑树脂覆盖所述功率芯片、所述控制芯片、所述功率端子以及所述控制端子,
在所述封装件的没有所述功率端子以及所述控制端子凸出的彼此相对的侧面,分别设置有用于安装散热鳍片的第1及第2凹部,
所述第1及第2凹部不相对而是配置于彼此错开的位置,
在所述侧面,在与所述第1凹部相对的位置处没有所述第2凹部。
2.根据权利要求1所述的功率模块,其特征在于,
所述封装件具有彼此相对的第1及第2主面,
所述第1及第2凹部设置于所述第2主面侧,
所述封装件在所述第1主面具有凸起的翘曲。
3.根据权利要求1所述的功率模块,其特征在于,
在设置有所述第1及第2凹部的所述侧面,内部电极没有从所述封装件露出。
4.根据权利要求2所述的功率模块,其特征在于,
在设置有所述第1及第2凹部的所述侧面,内部电极没有从所述封装件露出。
5.根据权利要求1至4中任一项所述的功率模块,其特征在于,
所述功率芯片具有:高压功率芯片;以及低压功率芯片,向其施加的电压比所述高压功率芯片低,
所述控制芯片具有:高压控制芯片,其对所述高压功率芯片进行控制;以及低压控制芯片,其对所述低压功率芯片进行控制,
将所述第1凹部配置于所述高压功率芯片侧,
将所述第2凹部配置于所述低压控制芯片侧。
6.根据权利要求1至4中任一项所述的功率模块,其特征在于,
所述功率芯片由宽带隙半导体形成。
7.根据权利要求5所述的功率模块,其特征在于,
所述功率芯片由宽带隙半导体形成。
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JP2019075476A (ja) | 2019-05-16 |
US20190115283A1 (en) | 2019-04-18 |
US10796979B2 (en) | 2020-10-06 |
JP6939392B2 (ja) | 2021-09-22 |
DE102018211260A1 (de) | 2019-04-18 |
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