JP6113970B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6113970B2 JP6113970B2 JP2012151180A JP2012151180A JP6113970B2 JP 6113970 B2 JP6113970 B2 JP 6113970B2 JP 2012151180 A JP2012151180 A JP 2012151180A JP 2012151180 A JP2012151180 A JP 2012151180A JP 6113970 B2 JP6113970 B2 JP 6113970B2
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- oxide semiconductor
- film
- semiconductor layer
- oxide
- transistor
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- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010052128 Glare Diseases 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 239000005264 High molar mass liquid crystal Substances 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Non-Volatile Memory (AREA)
- Electroluminescent Light Sources (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1及び図3を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体膜を有するトランジスタを示す。
窒化物絶縁膜は、プラズマCVD法又はスパッタリング法等により、窒化シリコン、窒化酸化シリコン、窒化アルミニウム、窒化酸化アルミニウム、又はこれらの混合材料を用いて形成することができる。
本実施の形態では、半導体装置及び半導体装置の作製方法の他の一形態を、図7、図8及び図11を用いて説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
本実施の形態では、半導体装置及び半導体装置の作製方法の他の一形態を、図5を用いて説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
本実施の形態では、半導体装置及び半導体装置の作製方法の他の一形態を、図6を用いて説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
実施の形態1乃至4のいずれかで一例を示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
実施の形態1乃至4のいずれかで一例を示したトランジスタを用いて、対象物の情報を読み取るイメージセンサ機能を有する半導体装置を作製することができる。
実施の形態1乃至4のいずれかで一例を示したトランジスタは、複数のトランジスタを積層する集積回路を有する半導体装置に好適に用いることができる。本実施の形態では、半導体装置の一例として、記憶媒体(メモリ素子)の例を示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した半導体装置を具備する電子機器の例について説明する。上記実施の形態で説明した半導体装置を具備することによって、高機能、高信頼性、又は低消費電力など、種々の目的に応じた品質を付与された電子機器を提供することができる。
102 酸化物半導体層
103 酸化物半導体層
105 混合領域
106 素子分離絶縁層
107 混合領域
108 ゲート絶縁膜
110 ゲート電極
111 酸素過剰領域
112 酸素過剰領域
113 酸素過剰領域
115 酸素過剰領域
116 チャネル形成領域
117 酸素過剰領域
120 不純物領域
121a 低抵抗領域
121b 低抵抗領域
121c チャネル形成領域
121d 低抵抗領域
121e 低抵抗領域
122a 低抵抗領域
122b 低抵抗領域
122c チャネル形成領域
122d 低抵抗領域
122e 低抵抗領域
123a 低抵抗領域
123b 低抵抗領域
123c チャネル形成領域
123d 低抵抗領域
123e 低抵抗領域
124 金属化合物領域
125a 低抵抗領域
125b 低抵抗領域
125c チャネル形成領域
125d 低抵抗領域
125e 低抵抗領域
127a 低抵抗領域
127b 低抵抗領域
127c チャネル形成領域
127d 低抵抗領域
127e 低抵抗領域
128 絶縁膜
130 絶縁膜
140 トランジスタ
142a ドレイン電極
142b ドレイン電極
144 酸化物半導体積層
146 ゲート絶縁膜
148 ゲート電極層
150 絶縁膜
152 絶縁膜
153 電極層
156 配線
162 トランジスタ
164 容量素子
185 基板
191 酸化物半導体膜
192 酸化物半導体膜
340 トランジスタ
343 トランジスタ
380a トランジスタ
380b トランジスタ
380c トランジスタ
382 トランジスタ
383 トランジスタ
385 トランジスタ
400 基板
401 ゲート電極層
402 ゲート絶縁膜
403 酸化物半導体積層
404a ソース電極層
404b ドレイン電極層
405a ソース電極層
405b ドレイン電極層
407 絶縁膜
415a ソース電極層
415b ドレイン電極層
416 絶縁膜
420 トランジスタ
421 ドーパント
423 トランジスタ
425 トランジスタ
430 トランジスタ
431 酸素
436 酸化物絶縁膜
440a トランジスタ
440b トランジスタ
440c トランジスタ
440d トランジスタ
440e トランジスタ
465a 配線層
465b 配線層
480 トランジスタ
485 トランジスタ
493 積層
601 基板
602 フォトダイオード
606a 半導体膜
606b 半導体膜
606c 半導体膜
608 接着層
613 基板
631 絶縁膜
632 絶縁膜
633 層間絶縁膜
634 層間絶縁膜
640 トランジスタ
641 電極層
642 電極層
643 導電層
645 導電層
656 トランジスタ
658 フォトダイオードリセット信号線
659 ゲート信号線
671 フォトセンサ出力信号線
672 フォトセンサ基準信号線
1000 基板
1001 酸化物半導体層
1002 酸化物半導体層
1003 酸化物半導体層
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁膜
4021 絶縁膜
4023 絶縁膜
4030 電極層
4031 電極層
4032 絶縁膜
4033 絶縁膜
4510 隔壁
4511 電界発光層
4513 発光素子
4514 充填材
9000 テーブル
9001 筐体
9002 脚部
9003 表示部
9004 表示ボタン
9005 電源コード
9100 テレビジョン装置
9101 筐体
9103 表示部
9105 スタンド
9107 表示部
9109 操作キー
9110 リモコン操作機
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9500 携帯電話機
9501 筐体
9502 表示部
9503 操作ボタン
9504 外部接続ポート
9505 スピーカ
9506 マイク
9507 操作ボタン
Claims (4)
- 第1の酸化物半導体層と、
前記第1の酸化物半導体層を覆う、第2の酸化物半導体層と、
前記第2の酸化物半導体層と電気的に接続された、ソース電極と、
前記第2の酸化物半導体層と電気的に接続された、ドレイン電極と、
前記第2の酸化物半導体層と、ゲート絶縁膜を介して、重なる領域を有する、ゲート電極と、を有し、
前記第1の酸化物半導体層の側面及び上面と、前記第2の酸化物半導体層の側面及び下面との間に混合領域を有し、
前記混合領域は、前記第1の酸化物半導体層を構成する元素を有し、
前記混合領域は、前記第2の酸化物半導体層を構成する元素を有することを特徴とする半導体装置。 - 請求項1において、
前記混合領域は、前記第1の酸化物半導体層を構成する元素の組成比と異なる組成比を有し、
前記混合領域は、前記第2の酸化物半導体層を構成する元素の組成比と異なる組成比を有することを特徴とする半導体装置。 - 請求項1又は請求項2において、
前記混合領域は、前記第1の酸化物半導体層のエネルギーギャップと異なるエネルギーギャップを有し、
前記混合領域は、前記第2の酸化物半導体層のエネルギーギャップと異なるエネルギーギャップを有することを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記第2の酸化物半導体層は、前記ゲート電極と重なる領域に、チャネル形成領域を有し、
前記チャネル形成領域に隣接した、前記混合領域は、低抵抗領域を有することを特徴とする半導体装置。
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