JP6100359B2 - 有機電子素子用基板 - Google Patents
有機電子素子用基板 Download PDFInfo
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- JP6100359B2 JP6100359B2 JP2015501593A JP2015501593A JP6100359B2 JP 6100359 B2 JP6100359 B2 JP 6100359B2 JP 2015501593 A JP2015501593 A JP 2015501593A JP 2015501593 A JP2015501593 A JP 2015501593A JP 6100359 B2 JP6100359 B2 JP 6100359B2
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- optical functional
- functional layer
- electrode layer
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- 238000007254 oxidation reaction Methods 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229930184652 p-Terphenyl Natural products 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- PYFQJAMTSYUJMX-UHFFFAOYSA-N phenazine Chemical compound C1=CC=CC2=NC3=CC=CC=C3N=C21.C1=CC=CC2=NC3=CC=CC=C3N=C21 PYFQJAMTSYUJMX-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- XPGAWFIWCWKDDL-UHFFFAOYSA-N propan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] XPGAWFIWCWKDDL-UHFFFAOYSA-N 0.000 description 1
- BCWYYHBWCZYDNB-UHFFFAOYSA-N propan-2-ol;zirconium Chemical compound [Zr].CC(C)O.CC(C)O.CC(C)O.CC(C)O BCWYYHBWCZYDNB-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- BMJSSYUUQNFHKW-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21.N1=CC=NC2=CC=CC=C21 BMJSSYUUQNFHKW-UHFFFAOYSA-N 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical compound C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- NZFNXWQNBYZDAQ-UHFFFAOYSA-N thioridazine hydrochloride Chemical compound Cl.C12=CC(SC)=CC=C2SC2=CC=CC=C2N1CCC1CCCCN1C NZFNXWQNBYZDAQ-UHFFFAOYSA-N 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- ISNYUQWBWALXEY-OMIQOYQYSA-N tsg6xhx09r Chemical compound O([C@@H](C)C=1[C@@]23CN(C)CCO[C@]3(C3=CC[C@H]4[C@]5(C)CC[C@@](C4)(O)O[C@@]53[C@H](O)C2)CC=1)C(=O)C=1C(C)=CNC=1C ISNYUQWBWALXEY-OMIQOYQYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Description
縮合性シランとしてテトラメトキシシランを含むゾルゲルコーティング液内に平均粒径が約200nmである散乱性粒子(酸化チタン粒子)を配合し、充分に分散させて、光散乱層用コーティング液を製造した。上記コーティング液をガラス基板にコーティングし、200℃で約 0分間ゾルゲル反応を進行させて、厚さが約300nm程度の光散乱層を形成した。その後、同一にテトラメトキシシランを含むゾルゲルコーティング液に、平均粒径が約10nmであり、屈折率が約2.5程度である高屈折酸化チタン粒子を配合した高屈折コーティング液を光散乱層の上部にコーティングした後に、同一にゾルゲル反応を進行し、屈折率が約1.8程度であり、厚さが約300nm程度である平坦層を形成した。次いで、上記平坦層の全面にさらにSiONを約50nm程度の厚さで蒸着した。その後、形成された層にレーザーを照射し、残存する光散乱層と平坦層の位置が引き続いて形成される有機層の発光領域に対応することができるように上記光散乱層と平坦層の一部を除去して加工した。その後、加工された積層構造をDI(Deionized Water)洗浄した。次いで、上記基板の全面にさらにSiONを約50nm程度の厚さでさらに蒸着し、さらに基板の全面に通常の方式でITO透明電極層を形成し、基板を製造した。続いて公知の素材及び方式を使用して正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層及び電子注入性電極層を形成した。その後、ガラスカンを使用して図9のような封止構造を有する有機発光装置を製作した。
実施例1と同一に有機発光装置を製造し、且つガラス基板の全面に形成された光散乱層と平坦層を除去せずに、そのままITO電極層を形成し、有機層、第2電極層及び封止構造を順次形成し、有機発光装置を製造した。
製造過程でSiON層を形成する段階を行わないことを除いて、実施例1と同一に有機発光装置を製造した。
実施例及び比較例の有機発光装置の初期発光状態を観察した後、各装置を85℃で500時間放置し、さらに発光状態を測定し、耐久性を評価した。図12は、実施例1で製造された装置を85℃で500時間放置した後の発光状態を示す図であり、図13は、比較例1の初期発光状態(図13(a))と85℃で500時間放置した後の発光状態(図13(b))を示す図である。図面から、比較例1の場合、500時間が経過した時点で多くのむらが観察され、輝度の均一度が大きく劣化することを確認することができる。
図14は、比較例2の装置に対して発光状態を確認した結果を示す写真である。実施例の発光状態確認結果を示す図12と比較して、素子にDark spotなどの欠陥が非常に多量発生したことを確認することができる。また、比較例2の装置は、素子の駆動電圧が比較例1に比べて約0.1V〜0.2V増加したことを確認することができた。
102、1021、1022 電極層
103 光学機能性層
X 光学機能性層間の電極層と基材層上の電極層との境界領域
W 光学機能性層の側壁
A 電極層の投映面積
B 光学機能性層の投映面積
401 平行電極
402 抵抗測定器
D1、D2、D3、D4 抵抗測定のための試験片または銀ペーストのサイズ
501 伝導物質
601 中間層
701 マトリックス物質
702 散乱性領域
801 光散乱層
901 有機層
902 第2電極層
903、1001 封止構造
904 接着剤
1002 第2基板
Claims (13)
- 基材層と;上記基材層上に形成されていて、上記基材層に比べて小さい投映面積を有する光学機能性層と;上記光学機能性層に比べて広い投映面積を有し、上記光学機能性層の上部及び上記光学機能性層が形成されていない基材層の上部の両方に形成されている中間層と;上記中間層上に形成されていて、上記中間層との屈折率の差の絶対値が1以下であり、上記光学機能性層に比べて広い投映面積を有し、上記光学機能性層の上部及び上記光学機能性層が形成されていない基材層の上部の両方に形成されている電極層と;を含み、
上記光学機能性層は、マトリックス物質及び上記マトリックス物質とは屈折率が異なる散乱性粒子を含み、上記マトリックス物質は、ポリシロキサン、ポリアミック酸、ポリイミド、フルオレン環を有するカルド系樹脂、又は、ウレタン、エポキシド、ポリエステル若しくはアクリレート系の熱若しくは光硬化性の単量体性、オリゴマー性若しくは高分子性有機材料であり、
上記光学機能性層は、光散乱層であり、
上記光学機能性層は、上記光散乱層の上部に形成されている平坦層を含む基板。 - 上記電極層の投映面積Aと上記光学機能性層の投映面積Bの比率A/Bが1.04以上である、請求項1に記載の基板。
- 上記中間層は、SiON、TiO2、SiO2、Al2O3、Ta2O3、Ti3O3、TiO、ZrO2、Nb2O3、CeO2またはZnSを含む、請求項1または2に記載の基板。
- 上記中間層の厚さは、10nm〜100nmである、請求項1から3の何れか1項に記載の基板。
- 上記基材層は、透光性である、請求項1から4の何れか1項に記載の基板。
- 上記電極層は、正孔注入性電極層または電子注入性電極層である、請求項1から5の何れか1項に記載の基板。
- 上記平坦層は、屈折率が1.7以上である、請求項1から6の何れか一項に記載の基板。
- 請求項1から7の何れか1項に記載の基板と;上記基板の電極層上に形成されていて、発光層を含む有機層と;上記有機層上に形成されている第2電極層と;を含む有機電子装置。
- 上記基板の光学機能性層の形成領域の長さBと上記発光層の発光領域の長さCの差B−Cは、10μm〜2mmである、請求項8に記載の有機電子装置。
- 上記有機層と上記第2電極層を保護する封止構造をさらに含み、上記封止構造は、下部に光学機能性層が形成されていない基板の電極層の上部に付着されている、請求項8または9に記載の有機電子装置。
- 上記封止構造は、ガラスカンまたは金属カンであるか、または有機層と第2電極層の全面を覆っているフィルムである、請求項10に記載の有機電子装置。
- 光学機能性層が基材層に比べて小さい投映面積を有するように基材層上に光学機能性層を形成する段階と、
上記光学機能性層に比べて広い投映面積を有する第1の中間層を上記光学機能性層の上部及び上記光学機能性層が形成されていない基材層の上部の両方に形成する段階と、
上記第1の中間層との屈折率の差が1以下である電極層を上記光学機能性層に比べて広い投映面積を有するように上記光学機能性層の上部及び上記光学機能性層が形成されていない基材層の上部の両方に形成する段階と
を含み、上記光学機能性層は、マトリックス物質及び上記マトリックス物質とは屈折率が異なる散乱性粒子を含み、上記マトリックス物質は、ポリシロキサン、ポリアミック酸、ポリイミド、フルオレン環を有するカルド系樹脂、又は、ウレタン、エポキシド、ポリエステル若しくはアクリレート系の熱若しくは光硬化性の単量体性、オリゴマー性若しくは高分子性有機材料であり、
上記光学機能性層及び上記第1の中間層の形成は、上記基材層上に光学機能性層と第1の中間層を順次形成し、上記光学機能性層と上記第1の中間層が上記基材層に比べて小さい投映面積を有するように加工し、さらに第2の中間層を上記加工された光学機能性層及び第1の中間層の上部及び上記光学機能性層及び第1の中間層が形成されていない基材層の上部の両方にさらに形成することを含む、基板の製造方法。 - 請求項8から11の何れか1項に記載の有機電子装置を含む照明。
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