JP5989652B2 - 改良されたショットキー整流器 - Google Patents

改良されたショットキー整流器 Download PDF

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Publication number
JP5989652B2
JP5989652B2 JP2013535073A JP2013535073A JP5989652B2 JP 5989652 B2 JP5989652 B2 JP 5989652B2 JP 2013535073 A JP2013535073 A JP 2013535073A JP 2013535073 A JP2013535073 A JP 2013535073A JP 5989652 B2 JP5989652 B2 JP 5989652B2
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layer
trench
substrate
schottky
conductivity type
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Japanese (ja)
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JP2013545295A5 (enExample
JP2013545295A (ja
Inventor
チ−ウェイ・ス
フローリン・ウドリー
イ−イン・リン
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Vishay General Semiconductor LLC
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Vishay General Semiconductor LLC
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2013535073A 2010-10-21 2011-10-20 改良されたショットキー整流器 Active JP5989652B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40529310P 2010-10-21 2010-10-21
US61/405,293 2010-10-21
US13/222,249 2011-08-31
US13/222,249 US8816468B2 (en) 2010-10-21 2011-08-31 Schottky rectifier
PCT/US2011/057012 WO2012054682A2 (en) 2010-10-21 2011-10-20 Improved schottky rectifier

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016155375A Division JP6471126B2 (ja) 2010-10-21 2016-08-08 改良されたショットキー整流器

Publications (3)

Publication Number Publication Date
JP2013545295A JP2013545295A (ja) 2013-12-19
JP2013545295A5 JP2013545295A5 (enExample) 2014-11-06
JP5989652B2 true JP5989652B2 (ja) 2016-09-07

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013535073A Active JP5989652B2 (ja) 2010-10-21 2011-10-20 改良されたショットキー整流器
JP2016155375A Active JP6471126B2 (ja) 2010-10-21 2016-08-08 改良されたショットキー整流器

Family Applications After (1)

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JP2016155375A Active JP6471126B2 (ja) 2010-10-21 2016-08-08 改良されたショットキー整流器

Country Status (7)

Country Link
US (2) US8816468B2 (enExample)
EP (1) EP2630663B1 (enExample)
JP (2) JP5989652B2 (enExample)
KR (1) KR101987009B1 (enExample)
CN (1) CN103180961B (enExample)
TW (1) TWI566422B (enExample)
WO (1) WO2012054682A2 (enExample)

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CN103681877A (zh) * 2012-09-26 2014-03-26 比亚迪股份有限公司 一种快恢复二极管的结构及其制造方法
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CN104795452B (zh) * 2014-01-16 2018-04-27 上海韦尔半导体股份有限公司 肖特基整流器及其制作方法
CN103943688B (zh) * 2014-04-21 2017-06-13 中航（重庆）微电子有限公司 一种肖特基势垒二极管器件结构及其制作方法
DE102015204137A1 (de) * 2015-03-09 2016-09-15 Robert Bosch Gmbh Halbleitervorrichtung mit einer Trench-Schottky-Barrier-Schottky-Diode
DE102015204138A1 (de) * 2015-03-09 2016-09-15 Robert Bosch Gmbh Halbleitervorrichtung mit einer Trench-MOS-Barrier-Schottky-Diode
EP3067935A1 (en) * 2015-03-10 2016-09-14 ABB Technology AG Power semiconductor rectifier with controllable on-state voltage
CN107591318B (zh) * 2016-07-07 2020-08-07 北大方正集团有限公司 沟槽肖特基器件的制作方法
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CN107946371B (zh) * 2017-01-24 2024-04-05 重庆中科渝芯电子有限公司 一种肖特基势垒接触的超势垒整流器及其制造方法
CN107946301A (zh) * 2017-02-24 2018-04-20 重庆中科渝芯电子有限公司 一种肖特基势垒接触的沟槽型超势垒整流器及其制造方法
CN109148605B (zh) * 2017-06-19 2022-02-18 比亚迪半导体股份有限公司 快恢复二极管及制备方法、电子设备
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US10424677B2 (en) * 2017-08-31 2019-09-24 Littelfuse, Inc. Charge carrier extraction inverse diode
CN108010910A (zh) * 2017-11-21 2018-05-08 重庆大学 一种沟槽型肖特基接触超级势垒整流器及其制作方法
CN109962097A (zh) * 2017-12-26 2019-07-02 比亚迪股份有限公司 二极管器件及其制造工艺
WO2019155768A1 (ja) * 2018-02-09 2019-08-15 三菱電機株式会社 電力用半導体装置
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TW202038473A (zh) * 2019-04-10 2020-10-16 台灣茂矽電子股份有限公司 二極體結構及其製造方法
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Also Published As

Publication number Publication date
JP6471126B2 (ja) 2019-02-13
KR20130093126A (ko) 2013-08-21
WO2012054682A2 (en) 2012-04-26
US20140357059A1 (en) 2014-12-04
EP2630663A2 (en) 2013-08-28
CN103180961A (zh) 2013-06-26
US8816468B2 (en) 2014-08-26
KR101987009B1 (ko) 2019-06-10
TW201238059A (en) 2012-09-16
JP2016197753A (ja) 2016-11-24
TWI566422B (zh) 2017-01-11
CN103180961B (zh) 2016-02-17
EP2630663A4 (en) 2014-10-01
WO2012054682A3 (en) 2012-06-21
JP2013545295A (ja) 2013-12-19
EP2630663B1 (en) 2016-10-19
US20120098082A1 (en) 2012-04-26

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