CN103180961B - 改进的肖特基整流器 - Google Patents

改进的肖特基整流器 Download PDF

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Publication number
CN103180961B
CN103180961B CN201180050938.9A CN201180050938A CN103180961B CN 103180961 B CN103180961 B CN 103180961B CN 201180050938 A CN201180050938 A CN 201180050938A CN 103180961 B CN103180961 B CN 103180961B
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layer
ground floor
groove
substrate
metal level
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CN103180961A (zh
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许志维
弗洛林·乌德雷亚
林意茵
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Vishay General Semiconductor LLC
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Vishay General Semiconductor LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201180050938.9A 2010-10-21 2011-10-20 改进的肖特基整流器 Active CN103180961B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40529310P 2010-10-21 2010-10-21
US61/405,293 2010-10-21
US13/222,249 US8816468B2 (en) 2010-10-21 2011-08-31 Schottky rectifier
US13/222,249 2011-08-31
PCT/US2011/057012 WO2012054682A2 (en) 2010-10-21 2011-10-20 Improved schottky rectifier

Publications (2)

Publication Number Publication Date
CN103180961A CN103180961A (zh) 2013-06-26
CN103180961B true CN103180961B (zh) 2016-02-17

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CN201180050938.9A Active CN103180961B (zh) 2010-10-21 2011-10-20 改进的肖特基整流器

Country Status (7)

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US (2) US8816468B2 (enExample)
EP (1) EP2630663B1 (enExample)
JP (2) JP5989652B2 (enExample)
KR (1) KR101987009B1 (enExample)
CN (1) CN103180961B (enExample)
TW (1) TWI566422B (enExample)
WO (1) WO2012054682A2 (enExample)

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US8981528B2 (en) 2012-11-16 2015-03-17 Vishay General Semiconductor Llc GaN-based Schottky diode having partially recessed anode
US9716151B2 (en) * 2013-09-24 2017-07-25 Semiconductor Components Industries, Llc Schottky device having conductive trenches and a multi-concentration doping profile therebetween
CN104795452B (zh) * 2014-01-16 2018-04-27 上海韦尔半导体股份有限公司 肖特基整流器及其制作方法
CN103943688B (zh) * 2014-04-21 2017-06-13 中航（重庆）微电子有限公司 一种肖特基势垒二极管器件结构及其制作方法
DE102015204138A1 (de) * 2015-03-09 2016-09-15 Robert Bosch Gmbh Halbleitervorrichtung mit einer Trench-MOS-Barrier-Schottky-Diode
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EP3067935A1 (en) * 2015-03-10 2016-09-14 ABB Technology AG Power semiconductor rectifier with controllable on-state voltage
CN107591318B (zh) * 2016-07-07 2020-08-07 北大方正集团有限公司 沟槽肖特基器件的制作方法
CN106024915B (zh) * 2016-07-25 2019-01-01 电子科技大学 一种超级结肖特基二极管
JP6742925B2 (ja) * 2017-01-18 2020-08-19 株式会社 日立パワーデバイス 半導体装置、及びそれを用いた電力変換装置
CN107946371B (zh) * 2017-01-24 2024-04-05 重庆中科渝芯电子有限公司 一种肖特基势垒接触的超势垒整流器及其制造方法
CN107946301A (zh) * 2017-02-24 2018-04-20 重庆中科渝芯电子有限公司 一种肖特基势垒接触的沟槽型超势垒整流器及其制造方法
CN109148605B (zh) * 2017-06-19 2022-02-18 比亚迪半导体股份有限公司 快恢复二极管及制备方法、电子设备
CN110870079B (zh) 2017-07-08 2024-01-09 株式会社Flosfia 半导体装置
US10424677B2 (en) * 2017-08-31 2019-09-24 Littelfuse, Inc. Charge carrier extraction inverse diode
CN108010910A (zh) * 2017-11-21 2018-05-08 重庆大学 一种沟槽型肖特基接触超级势垒整流器及其制作方法
CN109962097A (zh) * 2017-12-26 2019-07-02 比亚迪股份有限公司 二极管器件及其制造工艺
US11251282B2 (en) * 2018-02-09 2022-02-15 Mitsubishi Electric Corporation Power semiconductor device
US10608122B2 (en) 2018-03-13 2020-03-31 Semicondutor Components Industries, Llc Schottky device and method of manufacture
US10692988B2 (en) 2018-11-26 2020-06-23 Infineon Technologies Austria Ag Semiconductor device having integrated MOS-gated or Schottky diodes
CN109786472A (zh) * 2019-03-01 2019-05-21 重庆平伟实业股份有限公司 一种功率半导体器件
TW202038473A (zh) * 2019-04-10 2020-10-16 台灣茂矽電子股份有限公司 二極體結構及其製造方法
CN111816693A (zh) * 2019-04-10 2020-10-23 台湾茂矽电子股份有限公司 二极管结构及其制造方法
US11532758B2 (en) 2019-09-24 2022-12-20 Texas Instruments Incorporated Low leakage Schottky diode
CN114300543B (zh) * 2022-03-10 2022-06-07 安建科技(深圳)有限公司 一种电子抽取型续流二极管器件及其制备方法
CN115312591B (zh) * 2022-10-10 2022-12-23 深圳市威兆半导体股份有限公司 一种快恢复二极管及其制备方法
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Also Published As

Publication number Publication date
KR20130093126A (ko) 2013-08-21
JP2013545295A (ja) 2013-12-19
US20140357059A1 (en) 2014-12-04
WO2012054682A3 (en) 2012-06-21
EP2630663A4 (en) 2014-10-01
EP2630663B1 (en) 2016-10-19
JP6471126B2 (ja) 2019-02-13
WO2012054682A2 (en) 2012-04-26
JP2016197753A (ja) 2016-11-24
JP5989652B2 (ja) 2016-09-07
US8816468B2 (en) 2014-08-26
KR101987009B1 (ko) 2019-06-10
CN103180961A (zh) 2013-06-26
EP2630663A2 (en) 2013-08-28
TW201238059A (en) 2012-09-16
TWI566422B (zh) 2017-01-11
US20120098082A1 (en) 2012-04-26

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