JP2013545295A - 改良されたショットキー整流器 - Google Patents
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- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 2
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
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Abstract
Description
本願は2010年10月21日に出願された米国仮出願第61/405293号及び2011年8月31日に出願された米国特許出願第13/222249号の優先権を主張し、これらの文献の全体が参照として本願に組み込まれる。
Vbi=(KT/q)×ln(NdNa/ni 2) 式(1)
図6の実施形態に示される透明層を、トレンチの周囲の領域に配置する。透明層は、適切なp−型ドーパントを用いた注入及び/又は拡散によって形成可能である。注入で有機される結晶の損傷を最少化するため、注入エネルギーが低く保たれ得る(例えば25KeV)。注入ステップにはアニーリングステップ(例えば950℃の温度で60分間にわたる)が続き得て、半導体表面が、高品質のショットキーコンタクトを形成するのに十分平滑であるようにする。選択された設計及びレベル(ブロッキング電圧性能、漏れ電流、ターンオフ速度)に応じて、構造の主な層の幾何学的寸法及び伝導率は以下のように与えられる:
(1)p−濃度: 1×1013cm−3〜5×1018cm−3
(2)p−深さ: 0.05μm〜10μm
(3)トレンチ深さ: 0.5μm〜10.0μm
(4)トレンチ幅: 0.5μm〜5.0μm
(5)メサ幅(つまり、隣接するトレンチの間隔): 0.3μm〜30.0μm
(6)N−ドリフト領域幅: 5μm〜200μm
(7)N−ドリフト領域濃度: 5×1012cm−3〜5×1017cm−3
310 基板
320 エピタキシャルドリフト層
330 透明層
340 金属層
350 カソード
360 アノード
Claims (18)
- 第一の導電型を有する半導体の基板と、
前記基板の上に形成され、前記第一の導電型を有し、前記基板よりも低濃度ドープされた第一の層と、
前記基板の上に形成され、第二の導電型を有する第二の層と、
前記第二の層の上に形成された金属層と、
前記金属層の上に形成された第一の電極及び前記基板の裏面に形成された第二の電極とを備え、
前記金属層と前記第二の層との間にショットキーコンタクトが形成されるように前記第二の層が低濃度ドープされている、半導体整流器。 - 前記第二の層が、前記金属層と前記第二の層との間にオームコンタクトを形成するのに必要なドーピング濃度よりも低いドーピング濃度を有する、請求項1に記載の半導体整流器。
- 前記第二の層が前記第一の層の上に形成されている、請求項1に記載の半導体整流器。
- 前記第二の層が前記第一の層の中に形成されている、請求項1に記載の半導体整流器。
- 前記第一の層の中に形成された少なくとも一つのトレンチと、
前記少なくとも一つのトレンチの底部及び側壁の内側を覆う誘電体層と、
前記少なくとも一つのトレンチを充填する導体とを更に備えた請求項1に記載の半導体整流器。 - 前記第二の層が前記第一の層の中に形成されていて、前記トレンチの少なくとも一つの面に隣接している、請求項5に記載の半導体整流器。
- 前記第二の層が前記トレンチの両面に隣接している、請求項6に記載の半導体整流器。
- 前記少なくとも一つのトレンチが、前記第一の層の中に形成された複数のトレンチを備え、前記第二の層が選択されたトレンチの対の間において前記第一の層の中に形成されている、請求項5に記載の半導体整流器。
- 前記第二の層が、トレンチの各対の間において前記第一の層の中に形成されている、請求項5に記載の半導体整流器。
- シリサイド層が、前記金属層と前記第二の層との間の界面に形成されている、請求項1に記載の半導体整流器。
- 第一の導電型の半導体の本体を提供するステップと、
前記基板の上に、前記第一の導電型を有し、基板よりも低濃度ドープされた第一の層を形成するステップと、
前記基板の上に、第二の導電型を有する第二の層を形成するステップと、
第二の層の上に金属層を形成するステップと、
前記金属層の上に第一の電極を形成し、前記基板の裏面に第二の電極を形成するステップとを備え、
前記金属層と前記第二の層の間にショットキーコンタクトが形成されるように前記第二の層が低濃度ドープされる、整流器を製造するための方法。 - 前記第二の層を形成するステップが、前記第一の層内に第二の導電型のドーパントを注入又は拡散させることを含む、請求項11に記載の方法。
- 前記第一の層の中に少なくとも一つのトレンチを形成するステップと、
前記少なくとも一つのトレンチの底部及び側壁の内側を誘電体層で覆うステップと、
前記少なくとも一つのトレンチを導体で充填するステップとを更に備えた請求項11に記載の方法。 - 前記第一の層の中に少なくとも一つのトレンチを形成するステップが、前記金属層を形成するステップの前に行われる、請求項13に記載の方法。
- 前記第二の層を形成するステップが、オン状態性能とスイッチング性能との間の所望のトレードオフが達成されるように前記第二の層を形成することを含む、請求項11に記載の方法。
- 前記第二の層が、前記金属層と前記第二の層との間のオームコンタクトを形成するのに必要なドーピング濃度よりも低いドーピング濃度を有する、請求項11に記載の方法。
- 前記第二の層が前記第一の層の中に形成される、請求項11に記載の方法。
- 前記第二の層を形成するステップが、前記第一の層内への注入又は拡散によって前記第二の層を形成することを備える、請求項11に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40529310P | 2010-10-21 | 2010-10-21 | |
US61/405,293 | 2010-10-21 | ||
US13/222,249 | 2011-08-31 | ||
US13/222,249 US8816468B2 (en) | 2010-10-21 | 2011-08-31 | Schottky rectifier |
PCT/US2011/057012 WO2012054682A2 (en) | 2010-10-21 | 2011-10-20 | Improved schottky rectifier |
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JP2016155375A Division JP6471126B2 (ja) | 2010-10-21 | 2016-08-08 | 改良されたショットキー整流器 |
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JP2013545295A true JP2013545295A (ja) | 2013-12-19 |
JP2013545295A5 JP2013545295A5 (ja) | 2014-11-06 |
JP5989652B2 JP5989652B2 (ja) | 2016-09-07 |
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JP2013535073A Active JP5989652B2 (ja) | 2010-10-21 | 2011-10-20 | 改良されたショットキー整流器 |
JP2016155375A Active JP6471126B2 (ja) | 2010-10-21 | 2016-08-08 | 改良されたショットキー整流器 |
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JP2016155375A Active JP6471126B2 (ja) | 2010-10-21 | 2016-08-08 | 改良されたショットキー整流器 |
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US (2) | US8816468B2 (ja) |
EP (1) | EP2630663B1 (ja) |
JP (2) | JP5989652B2 (ja) |
KR (1) | KR101987009B1 (ja) |
CN (1) | CN103180961B (ja) |
TW (1) | TWI566422B (ja) |
WO (1) | WO2012054682A2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016167598A (ja) * | 2015-03-09 | 2016-09-15 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh | トレンチmosバリアショットキーダイオードを備える半導体装置 |
JP2016167597A (ja) * | 2015-03-09 | 2016-09-15 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh | トレンチ・ショットキー・バリア・ショットキーダイオードを備える半導体装置 |
JP2018117044A (ja) * | 2017-01-18 | 2018-07-26 | 株式会社 日立パワーデバイス | 半導体装置、及びそれを用いた電力変換装置 |
KR20190024839A (ko) * | 2017-08-31 | 2019-03-08 | 익시스, 엘엘씨 | 전하 캐리어 추출 역 다이오드 |
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JP5787853B2 (ja) * | 2012-09-12 | 2015-09-30 | 株式会社東芝 | 電力用半導体装置 |
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US9018698B2 (en) * | 2012-11-16 | 2015-04-28 | Vishay General Semiconductor Llc | Trench-based device with improved trench protection |
US8981381B2 (en) | 2012-11-16 | 2015-03-17 | Vishay General Semiconductor Llc | GaN-based Schottky diode having dual metal, partially recessed electrode |
US9716151B2 (en) * | 2013-09-24 | 2017-07-25 | Semiconductor Components Industries, Llc | Schottky device having conductive trenches and a multi-concentration doping profile therebetween |
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WO2012054682A3 (en) | 2012-06-21 |
KR20130093126A (ko) | 2013-08-21 |
EP2630663A2 (en) | 2013-08-28 |
JP6471126B2 (ja) | 2019-02-13 |
JP2016197753A (ja) | 2016-11-24 |
WO2012054682A2 (en) | 2012-04-26 |
US8816468B2 (en) | 2014-08-26 |
US20140357059A1 (en) | 2014-12-04 |
US20120098082A1 (en) | 2012-04-26 |
CN103180961B (zh) | 2016-02-17 |
TW201238059A (en) | 2012-09-16 |
CN103180961A (zh) | 2013-06-26 |
EP2630663A4 (en) | 2014-10-01 |
JP5989652B2 (ja) | 2016-09-07 |
EP2630663B1 (en) | 2016-10-19 |
TWI566422B (zh) | 2017-01-11 |
KR101987009B1 (ko) | 2019-06-10 |
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