JP5797272B2 - ウエハ状物品を処理するための装置 - Google Patents
ウエハ状物品を処理するための装置 Download PDFInfo
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- 235000012431 wafers Nutrition 0.000 claims description 34
- 230000007246 mechanism Effects 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000000994 depressogenic effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 22
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning By Liquid Or Steam (AREA)
Description
[適用例1]ウエハ状物品を処理するための装置であって、
密閉処理チャンバと、
前記密閉処理チャンバ内に位置するチャックと
前記チャンバ内に配された少なくとも1つの処理液体吐出機器と、
前記少なくとも1つの処理液体吐出機器のための駆動ユニットであって、前記少なくとも1つの吐出機器を、周縁の待機位置から、前記少なくとも1つの吐出機器の吐出端が前記チャックから半径方向内向きに動かされた1つ以上の作動位置へと動かすために、前記少なくとも1つの吐出機器に駆動式に接続され、前チャンバの外側に装着される、駆動ユニットと、
を備える、装置。
[適用例2]適用例1に記載の装置であって、
前記チャンバは、半導体ウエハの枚葉式ウェット処理のためのプロセスモジュールの構成要素である、装置。
[適用例3]適用例1に記載の装置であって、
前記チャックは、前記チャンバから下方へ伸びる駆動シャフトを有するスピンチャックである、装置。
[適用例4]適用例1に記載の装置であって、
前記チャンバは、閉位置から、ウエハ状物品が前記チャンバに導入される又は前記チャンバから取り出されることを可能にする開位置へ可動な蓋を含み、
前記蓋は、前記閉位置にあるときに前記チャンバにガスを注入するためのガスノズルを含み、
前記少なくとも1つの処理液体吐出機器は、前記蓋が前記閉位置にある間に前記チャンバに液体を吐出するように動作可能である、装置。
[適用例5]適用例4に記載の装置であって、更に、
前記蓋を前記閉位置から前記開位置へ動かす駆動機構であって、前記蓋を前記チャンバに相対的に上方及び側方の両方に変位させるように適応される、駆動機構を備える、装置。
[適用例6]適用例1に記載の装置であって、
前記駆動ユニットは、前記チャンバの側方ケースに装着されたモータであり、
前記モータの出力シャフトは、前記側方ケースに入り、前記チャンバに入って前記少なくとも1つの処理液体吐出機器に接続するリンクを駆動する、装置。
[適用例7]適用例1に記載の装置であって、
前記少なくとも1つの処理液体吐出機器は、前記チャンバ内に枢動式に装着された媒質供給アームであって、周縁の待機位置から、前記媒質供給アームの吐出端が前記チャックから半径方向内向きに動かされた1つ以上の作動位置へと動くことが可能である媒質供給アームである、装置。
[適用例8]適用例7に記載の装置であって、
前記媒質供給アームは、前記チャンバの壁を通るリンクに枢動式に接続された一方の端と、吐出ノズルを提供された反対側の端と、を有する、装置。
[適用例9]適用例4に記載の装置であって、
前記蓋は、前記ガスノズルを配された領域を含むガスシャワーヘッドであり、
前記領域は、前記密閉処理チャンバ内で処理されるべきウエハ状物品の面積の少なくとも50%に及ぶ、装置。
[適用例10]適用例4に記載の装置であって、
前記蓋は、前記チャック上で支えられたウエハ状物品に平行に配置される、装置。
[適用例11]適用例1に記載の装置であって、
前記チャックは、前記密閉処理チャンバに相対的に垂直に可動であり、少なくとも3つの停止位置を有するように構成され、これらの位置は、前記チャックへの及び前記チャックからのウエハ状物品の取り込み及び取り出しのための最上位置、並びに前記チャンバの別々のプロセスレベルにそれぞれ対応する少なくとも2つの下方位置である、装置。
[適用例12]適用例1に記載の装置であって、
前記密閉処理チャンバは、重ね合わされた複数のプロセスレベルを含み、
前記重ね合わされた複数のプロセスレベルの各レベルは、個々に制御可能なそれぞれの排気口であって前記各レベルに接続された排気口を有する、装置。
[適用例13]適用例1に記載の装置であって、
前記密閉処理チャンバは、ベース板の上表面上に装着され、
前記装置は、更に、前記チャックのための駆動ユニットを含み、
前記チャックのための前記駆動ユニットは、前記ベース板の下表面から下垂するケース内に装着される、装置。
[適用例14]適用例4に記載の装置であって、
前記蓋を前記閉位置から前記開位置へと動かす前記駆動機構は、ベース板の下表面に装着され、
前記密閉処理チャンバは、前記ベース板の上表面上に装着される、装置。
[適用例15]適用例4に記載の装置であって、
前記チャンバは、円形の上方開口を有し、
前記蓋は、前記チャンバ開口よりも大きく、
前記蓋が前記チャンバ壁に向かって押し下げられたときに前記蓋が前記上方チャンバ壁に密着するようにシールが提供される、装置。
Claims (13)
- ウエハ状物品を処理するための装置であって、
密閉処理チャンバと、
前記密閉処理チャンバ内に位置するチャックと
前記チャンバ内に配された少なくとも1つの処理液体吐出機器と、
前記少なくとも1つの処理液体吐出機器のための駆動ユニットであって、前記少なくとも1つの吐出機器を、周縁の待機位置から、前記少なくとも1つの吐出機器の吐出端が前記チャックから半径方向内向きに動かされた1つ以上の作動位置へと動かすために、前記少なくとも1つの吐出機器に駆動式に接続され、前チャンバの外側に装着される、駆動ユニットと、
を備え、
前記駆動ユニットは、前記チャンバの側方ケースに装着されたモータであり、
前記モータの出力シャフトは、前記側方ケースに入り、前記チャンバに入って前記少なくとも1つの処理液体吐出機器に接続するリンクを駆動し、
前記チャックは、
前記密閉処理チャンバに相対的に垂直に可動であり、少なくとも3つの停止位置を有するように構成され、
これらの位置は、前記チャックへの及び前記チャックからのウエハ状物品の取り込み及び取り出しのための最上位置、並びに前記チャンバの別々のプロセスレベルにそれぞれ対応する少なくとも2つの下方位置である
装置。 - 請求項1に記載の装置であって、
前記チャンバは、半導体ウエハの枚葉式ウェット処理のためのプロセスモジュールの構成要素である、装置。 - 請求項1に記載の装置であって、
前記チャックは、前記チャンバから下方へ伸びる駆動シャフトを有するスピンチャックである、装置。 - 請求項1に記載の装置であって、
前記チャンバは、閉位置から、ウエハ状物品が前記チャンバに導入される又は前記チャンバから取り出されることを可能にする開位置へ可動な蓋を含み、
前記蓋は、前記閉位置にあるときに前記チャンバにガスを注入するためのガスノズルを含み、
前記少なくとも1つの処理液体吐出機器は、前記蓋が前記閉位置にある間に前記チャンバに液体を吐出するように動作可能である、装置。 - 請求項4に記載の装置であって、更に、
前記蓋を前記閉位置から前記開位置へ動かす駆動機構であって、前記蓋を前記チャンバに相対的に上方及び側方の両方に変位させるように適応される、駆動機構を備える、装置。 - 請求項1に記載の装置であって、
前記少なくとも1つの処理液体吐出機器は、前記チャンバ内に枢動式に装着された媒質供給アームであって、周縁の待機位置から、前記媒質供給アームの吐出端が前記チャックから半径方向内向きに動かされた1つ以上の作動位置へと動くことが可能である媒質供給アームである、装置。 - 請求項6に記載の装置であって、
前記媒質供給アームは、前記チャンバの壁を通るリンクに枢動式に接続された一方の端と、吐出ノズルを提供された反対側の端と、を有する、装置。 - 請求項4に記載の装置であって、
前記蓋は、前記ガスノズルを配された領域を含むガスシャワーヘッドであり、
前記領域は、前記密閉処理チャンバ内で処理されるべきウエハ状物品の面積の少なくとも50%に及ぶ、装置。 - 請求項4に記載の装置であって、
前記蓋は、前記チャック上で支えられたウエハ状物品に平行に配置される、装置。 - 請求項1に記載の装置であって、
前記密閉処理チャンバは、重ね合わされた複数のプロセスレベルを含み、
前記重ね合わされた複数のプロセスレベルの各レベルは、個々に制御可能なそれぞれの排気口であって前記各レベルに接続された排気口を有する、装置。 - 請求項1に記載の装置であって、
前記密閉処理チャンバは、ベース板の上表面上に装着され、
前記装置は、更に、前記チャックのための駆動ユニットを含み、
前記チャックのための前記駆動ユニットは、前記ベース板の下表面から下垂するケース内に装着される、装置。 - 請求項4に記載の装置であって、
前記蓋を前記閉位置から前記開位置へと動かす前記駆動機構は、ベース板の下表面に装着され、
前記密閉処理チャンバは、前記ベース板の上表面上に装着される、装置。 - 請求項4に記載の装置であって、
前記チャンバは、円形の上方開口を有し、
前記蓋は、前記チャンバ開口よりも大きく、
前記蓋が前記チャンバ壁に向かって押し下げられたときに前記蓋が前記上方チャンバ壁に密着するようにシールが提供される、装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US12/913,405 | 2010-10-27 | ||
US12/913,405 US8926788B2 (en) | 2010-10-27 | 2010-10-27 | Closed chamber for wafer wet processing |
PCT/IB2011/054377 WO2012056341A2 (en) | 2010-10-27 | 2011-10-05 | Closed chamber for wafer wet processing |
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JP2013544025A JP2013544025A (ja) | 2013-12-09 |
JP5797272B2 true JP5797272B2 (ja) | 2015-10-21 |
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US (1) | US8926788B2 (ja) |
JP (1) | JP5797272B2 (ja) |
KR (1) | KR101779240B1 (ja) |
CN (1) | CN103180056B (ja) |
SG (1) | SG189217A1 (ja) |
TW (1) | TWI488228B (ja) |
WO (1) | WO2012056341A2 (ja) |
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US8926788B2 (en) | 2015-01-06 |
SG189217A1 (en) | 2013-05-31 |
TWI488228B (zh) | 2015-06-11 |
CN103180056B (zh) | 2015-11-25 |
WO2012056341A2 (en) | 2012-05-03 |
KR101779240B1 (ko) | 2017-09-18 |
JP2013544025A (ja) | 2013-12-09 |
WO2012056341A3 (en) | 2012-07-19 |
CN103180056A (zh) | 2013-06-26 |
US20120103522A1 (en) | 2012-05-03 |
KR20140001880A (ko) | 2014-01-07 |
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