JP5725814B2 - 直流変換回路 - Google Patents
直流変換回路 Download PDFInfo
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- JP5725814B2 JP5725814B2 JP2010265047A JP2010265047A JP5725814B2 JP 5725814 B2 JP5725814 B2 JP 5725814B2 JP 2010265047 A JP2010265047 A JP 2010265047A JP 2010265047 A JP2010265047 A JP 2010265047A JP 5725814 B2 JP5725814 B2 JP 5725814B2
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- layer
- oxide semiconductor
- film
- transistor
- oxide
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Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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Description
本実施の形態では、本発明の一態様である直流変換回路の一例について説明する。
本実施の形態では、本発明の一態様である直流変換回路の一例について説明する。直流変換回路の変換方式としては、リニア方式やスイッチング方式が代表的であるが、スイッチング方式の直流変換回路は変換効率に優れるため、電子機器の省電力化に好適である。本実施の形態では、スイッチング方式、特にチョッパ方式の直流変換回路について説明する。
本実施の形態は、本明細書で開示する直流変換回路を構成するトランジスタに適用できるトランジスタの例を示す。
本実施の形態は、本明細書で開示する直流変換回路を構成するトランジスタに適用できるトランジスタの他の例を示す。なお、実施の形態3と同一部分又は同様な機能を有する部分、及び工程は、実施の形態3と同様とすればよく、その繰り返しの説明は適宜省略する。また同じ箇所の詳細な説明も適宜省略する。
本実施の形態は、本発明の一態様である直流変換回路を構成するトランジスタに適用可能なトランジスタの一例について説明する。なお、実施の形態3又は実施の形態4と同一部分又は同様な機能を有する部分、及び工程は、実施の形態3又は実施の形態4と同様とすればよく、その繰り返しの説明は適宜省略する。また同じ箇所の詳細な説明も適宜省略する。
本実施の形態では、本発明の一態様である直流変換回路を構成するトランジスタに適用可能なトランジスタの一例について説明する。
本実施の形態は、本発明の一態様である直流変換回路を構成するトランジスタに適用可能なトランジスタの一例について説明する。
本実施の形態は、本発明の一態様である直流変換回路を構成するトランジスタに適用可能なトランジスタの一例について説明する。
本実施の形態では、本発明の一態様である直流変換回路を構成するトランジスタに適用可能なトランジスタの一例について説明する。
本実施の形態は、本発明の一態様である直流変換回路を構成するトランジスタに適用可能なトランジスタの一例について説明する。
本発明の一態様である直流変換回路は、他の様々な蓄電装置と組み合わせて電源回路を構成することができる。本実施の形態では、本発明の一態様である直流変換回路を用いた電源回路について説明する。
本実施の形態は、上記実施の形態11に示す電源回路を適用することができる電子機器の一例について図21を用いて説明する。
102 トランジスタ
103 整流素子
104 制御回路
201 コイル
202 トランジスタ
203 ダイオード
204 容量素子
205 ヒステリシスコンパレータ
221 コンパレータ
222 コンパレータ
223 インバータ
224 インバータ
225 NORゲート
226 NORゲート
300 基板
302 ゲート絶縁層
303 保護絶縁層
310 トランジスタ
311 ゲート電極層
313 チャネル形成領域
314a 低抵抗ソース領域
314b 低抵抗ドレイン領域
315a ソース電極層
315b ドレイン電極層
316 酸化物絶縁層
320 基板
322 ゲート絶縁層
323 保護絶縁層
330 酸化物半導体膜
331 酸化物半導体層
332 酸化物半導体層
340 基板
342 ゲート絶縁層
343 保護絶縁層
345 酸化物半導体膜
346 酸化物半導体層
350 トランジスタ
351 ゲート電極層
352 酸化物半導体層
355a ソース電極層
355b ドレイン電極層
356 酸化物絶縁層
360 トランジスタ
361 ゲート電極層
362 酸化物半導体層
363 チャネル形成領域
364a 低抵抗ソース領域
364b 低抵抗ドレイン領域
365a ソース電極層
365b ドレイン電極層
366 酸化物絶縁層
370 基板
372a ゲート絶縁層
372b ゲート絶縁層
373 保護絶縁層
380 トランジスタ
381 ゲート電極層
382 酸化物半導体層
385a ソース電極層
385b ドレイン電極層
386 酸化物絶縁層
390 トランジスタ
391 ゲート電極層
392 酸化物半導体層
393 酸化物半導体膜
394 基板
395a ソース電極層
395b ドレイン電極層
396 酸化物絶縁層
397 ゲート絶縁層
398 保護絶縁層
399 酸化物半導体層
400 基板
402 ゲート絶縁層
407 絶縁層
410 トランジスタ
411 ゲート電極層
412 酸化物半導体層
414a 配線層
414b 配線層
415a ソース電極層
415b ドレイン電極層
420 シリコン基板
421a 開口
421b 開口
422 絶縁層
423 開口
424 導電層
425 トランジスタ
426 トランジスタ
427 導電層
450 基板
452 ゲート絶縁層
457 絶縁層
460 トランジスタ
461 ゲート電極層
461a ゲート電極層
461b ゲート電極層
462 酸化物半導体層
464 配線層
465a 電極層
465b 電極層
465a1 電極層
465a2 電極層
468 配線層
601 蓄電装置
602 直流変換回路
1001 ゲート電極
1002 ゲート絶縁膜
1003 酸化物半導体層
1004a ソース電極
1004b ドレイン電極
1005 酸化物絶縁層
1006 導電層
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ用レンズ
2808 外部接続端子
2810 太陽電池セル
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
Claims (3)
- コイルと、
ゲート、ソース、及びドレインを有し、前記ソース及び前記ドレインの一方からの出力が前記コイルに入力され、前記ソース及び前記ドレインの他方に入力電圧が与えられる第1のトランジスタと、
第1の電極及び第2の電極を有し、前記第1の電極に前記コイルの出力が与えられ、前記第2の電極に低電源電圧が与えられる容量素子と、
アノード及びカソードを有し、前記アノードに前記低電源電圧が与えられ、前記カソードが前記第1のトランジスタの前記ソース及び前記ドレインの一方に電気的に接続されたダイオードと、
前記コイルの出力電圧に応じてデューティ比が設定されたパルス信号を、前記第1のトランジスタの前記ゲートに出力するヒステリシスコンパレータと、を具備し、
前記ヒステリシスコンパレータは、
第1の基準電圧と、前記コイルからの出力が入力される第1のコンパレータと、
前記コイルからの出力と、第2の基準電圧が入力される第2のコンパレータと、
前記第1のコンパレータの出力が入力される第1のインバータと、
前記第2のコンパレータの出力が入力される第2のインバータと、
前記第1のトランジスタの前記ゲートへ出力され、前記第1のインバータからの出力が入力される第1のNORゲートと、
前記第1のNORゲートへ出力され、前記第1のNORゲートからの出力と、前記第2のインバータからの出力が入力される第2のNORゲートと、を具備し、
前記第1のコンパレータ、前記第2のコンパレータ、前記第1のインバータ、前記第2のインバータ、前記第1のNORゲート、及び前記第2のNORゲートのそれぞれは、ゲート、ソース、及びドレインを有する第2のトランジスタを具備し、
前記第1のトランジスタは、チャネル形成層として第1の酸化物半導体層を有し、
前記第2のトランジスタは、チャネル形成層として第2の酸化物半導体層を有し、
前記第1の酸化物半導体層及び前記第2の酸化物半導体層は、高純度化され、真性化または実質的に真性化された酸化物半導体を有し、
前記第1のトランジスタ及び前記第2のトランジスタのオフ電流密度は、1×10 −16 A/μm以下である直流変換回路。 - コイルと、
ゲート、ソース、及びドレインを有し、前記ソース及び前記ドレインの一方からの出力が前記コイルに入力され、前記ソース及び前記ドレインの他方に入力電圧が与えられる第1のトランジスタと、
第1の電極及び第2の電極を有し、前記第1の電極が前記コイルの出力が与えられ、前記第2の電極に低電源電圧が与えられる容量素子と、
アノード及びカソードを有し、前記アノードに前記低電源電圧が与えられ、前記カソードが前記第1のトランジスタの前記ソース及び前記ドレインの一方に電気的に接続されたダイオードと、
前記コイルの出力電圧に応じてデューティ比が設定されたパルス信号を、前記第1のトランジスタの前記ゲートに出力するヒステリシスコンパレータと、を具備し、
前記ヒステリシスコンパレータは、同一の導電型の第2のトランジスタで構成され、
前記第1のトランジスタは、チャネル形成層として第1の酸化物半導体層を有し、
前記第2のトランジスタは、チャネル形成層として第2の酸化物半導体層を有し、
前記第1の酸化物半導体層及び前記第2の酸化物半導体層は、高純度化され、真性化または実質的に真性化された酸化物半導体を有し、
前記第1のトランジスタ及び前記第2のトランジスタのオフ電流密度は、1×10 −16 A/μm以下である直流変換回路。 - 請求項1又は2において、
前記第1の酸化物半導体層及び前記第2の酸化物半導体層の水素濃度は5×1019atoms/cm3以下である直流変換回路。
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WO2011145707A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
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US8792260B2 (en) | 2010-09-27 | 2014-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Rectifier circuit and semiconductor device using the same |
US9362820B2 (en) | 2010-10-07 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | DCDC converter, semiconductor device, and power generation device |
US9935622B2 (en) | 2011-04-28 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Comparator and semiconductor device including comparator |
JP4982619B1 (ja) * | 2011-07-29 | 2012-07-25 | 富士フイルム株式会社 | 半導体素子の製造方法及び電界効果型トランジスタの製造方法 |
TWI561951B (en) | 2012-01-30 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Power supply circuit |
US20130265010A1 (en) * | 2012-04-06 | 2013-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Protective circuit module and battery pack |
WO2015097595A1 (en) | 2013-12-27 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP6462404B2 (ja) | 2014-02-28 | 2019-01-30 | 株式会社半導体エネルギー研究所 | Dcdcコンバータ、半導体装置、及び電子機器 |
JP6612056B2 (ja) | 2014-05-16 | 2019-11-27 | 株式会社半導体エネルギー研究所 | 撮像装置、及び監視装置 |
JP6552336B2 (ja) | 2014-08-29 | 2019-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6777421B2 (ja) | 2015-05-04 | 2020-10-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6796461B2 (ja) | 2015-11-18 | 2020-12-09 | 株式会社半導体エネルギー研究所 | 半導体装置、コンピュータ及び電子機器 |
US9966231B2 (en) * | 2016-02-29 | 2018-05-08 | Lam Research Corporation | Direct current pulsing plasma systems |
US10453404B2 (en) | 2016-08-17 | 2019-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Display method, display device, display module, and electronic device |
US11457167B2 (en) | 2017-05-31 | 2022-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Comparison circuit, semiconductor device, electronic component, and electronic device |
JP7399857B2 (ja) | 2018-07-10 | 2023-12-18 | 株式会社半導体エネルギー研究所 | 二次電池の保護回路 |
Family Cites Families (161)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5551624U (ja) * | 1978-09-28 | 1980-04-05 | ||
DE2843456C2 (de) | 1978-10-05 | 1984-11-15 | Vdo Adolf Schindling Ag, 6000 Frankfurt | Stellungsgeber zum Beeinflussen der Fahrgeschwindigkeit eines Kraftfahrzeugs |
JPS5886868A (ja) | 1981-11-16 | 1983-05-24 | Nec Corp | 非絶縁形lc共振コンバ−タ |
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPS63235117A (ja) | 1987-03-23 | 1988-09-30 | Diesel Kiki Co Ltd | 車両用空調装置 |
JPH0831785B2 (ja) * | 1986-11-28 | 1996-03-27 | 日本電気株式会社 | ディジタル位相比較器 |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0548095A (ja) * | 1991-08-07 | 1993-02-26 | Canon Inc | 半導体装置及びその製造方法 |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH06189529A (ja) * | 1992-12-17 | 1994-07-08 | Fuji Electric Co Ltd | Dc−dcコンバ−タ |
JP3397778B2 (ja) * | 1993-03-15 | 2003-04-21 | 株式会社東芝 | Dc−dcコンバータ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
JP3119111B2 (ja) * | 1995-04-10 | 2000-12-18 | 株式会社豊田自動織機製作所 | Dc/dcコンバータ |
DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
US5691889A (en) * | 1995-12-13 | 1997-11-25 | Unitrode Corporation | Controller having feed-forward and synchronization features |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
US5982156A (en) * | 1997-04-15 | 1999-11-09 | The United States Of America As Represented By The Secretary Of The Air Force | Feed-forward control of aircraft bus dc boost converter |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
JP3666805B2 (ja) | 2000-09-19 | 2005-06-29 | ローム株式会社 | Dc/dcコンバータ |
JP2003050405A (ja) * | 2000-11-15 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
JP2004087682A (ja) * | 2002-08-26 | 2004-03-18 | Chi Mei Electronics Corp | 薄膜トランジスタ、画像表示素子および画像表示装置 |
JP2004104942A (ja) * | 2002-09-11 | 2004-04-02 | Murata Mfg Co Ltd | Dc−dcコンバータ |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
JP2005175386A (ja) * | 2003-12-15 | 2005-06-30 | Asahi Kasei Corp | 有機半導体素子 |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7072193B2 (en) | 2004-05-19 | 2006-07-04 | Toppoly Optoelectronics Corp. | Integrated charge pump DC/DC conversion circuits using thin film transistors |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) * | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
AU2005302962B2 (en) | 2004-11-10 | 2009-05-07 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
JP5118810B2 (ja) | 2004-11-10 | 2013-01-16 | キヤノン株式会社 | 電界効果型トランジスタ |
CA2585071A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7872259B2 (en) | 2004-11-10 | 2011-01-18 | Canon Kabushiki Kaisha | Light-emitting device |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
JP4643996B2 (ja) | 2005-01-24 | 2011-03-02 | ルネサスエレクトロニクス株式会社 | チャージポンプ回路及びその昇圧方法 |
TWI445178B (zh) | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI505473B (zh) | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
JP4571000B2 (ja) * | 2005-03-29 | 2010-10-27 | 富士重工業株式会社 | 蓄電デバイスの残存容量演算装置 |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
JP4984416B2 (ja) * | 2005-03-31 | 2012-07-25 | 凸版印刷株式会社 | 薄膜トランジスタの製造方法 |
JP4887646B2 (ja) * | 2005-03-31 | 2012-02-29 | 凸版印刷株式会社 | 薄膜トランジスタ装置及びその製造方法並びに薄膜トランジスタアレイ及び薄膜トランジスタディスプレイ |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP5116251B2 (ja) * | 2005-05-20 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7537976B2 (en) | 2005-05-20 | 2009-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP4560502B2 (ja) | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007074190A (ja) * | 2005-09-06 | 2007-03-22 | Rohm Co Ltd | 三角波発生回路ならびにそれを用いたパルス幅変調器およびスイッチングレギュレータ |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
DE112006002392T5 (de) * | 2005-09-08 | 2008-10-02 | Sumitomo Chemical Co. Ltd. | Polymer, umfassend eine Einheit, umfassend einen Fluorcyclopentanring kondensiert mit einem aromatischen Ring, und organischer Dünnfilm und organisches Dünnfilmelement, die es beide umfassen |
US7323851B2 (en) * | 2005-09-22 | 2008-01-29 | Artesyn Technologies, Inc. | Digital power factor correction controller and AC-to-DC power supply including same |
EP1998375A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5078246B2 (ja) * | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
EP1935027B1 (en) * | 2005-10-14 | 2017-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5427340B2 (ja) * | 2005-10-14 | 2014-02-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101117948B1 (ko) | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
US7714562B2 (en) | 2005-12-05 | 2010-05-11 | Panasonic Corporation | Hysteretic switching regulator |
US7314801B2 (en) * | 2005-12-20 | 2008-01-01 | Palo Alto Research Center Incorporated | Semiconductor device having a surface conducting channel and method of forming |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
JP5194468B2 (ja) * | 2006-03-07 | 2013-05-08 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
WO2007138937A1 (en) * | 2006-05-26 | 2007-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7443202B2 (en) | 2006-06-02 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic apparatus having the same |
JP2009528670A (ja) * | 2006-06-02 | 2009-08-06 | 財団法人高知県産業振興センター | 半導体機器及びその製法 |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP5312938B2 (ja) | 2006-06-21 | 2013-10-09 | パナソニック株式会社 | 電界効果トランジスタ |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
JP5076536B2 (ja) | 2007-02-16 | 2012-11-21 | 富士通セミコンダクター株式会社 | 直流−直流変換回路、直流−直流変換制御回路および直流−直流変換制御方法 |
WO2008099863A1 (ja) * | 2007-02-16 | 2008-08-21 | Idemitsu Kosan Co., Ltd. | 半導体,半導体装置及び相補型トランジスタ回路装置 |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
TWI487118B (zh) | 2007-03-23 | 2015-06-01 | Idemitsu Kosan Co | Semiconductor device |
KR101453829B1 (ko) * | 2007-03-23 | 2014-10-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그 제조 방법 |
JP5465825B2 (ja) | 2007-03-26 | 2014-04-09 | 出光興産株式会社 | 半導体装置、半導体装置の製造方法及び表示装置 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
US8274078B2 (en) | 2007-04-25 | 2012-09-25 | Canon Kabushiki Kaisha | Metal oxynitride semiconductor containing zinc |
WO2008136505A1 (ja) * | 2007-05-08 | 2008-11-13 | Idemitsu Kosan Co., Ltd. | 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法 |
JP5164428B2 (ja) * | 2007-05-11 | 2013-03-21 | ヤマハモーターエレクトロニクス株式会社 | 発電制御装置及び鞍乗型車両 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP2009060702A (ja) | 2007-08-30 | 2009-03-19 | Sanyo Electric Co Ltd | チャージポンプ式昇圧回路 |
JP4935585B2 (ja) * | 2007-08-31 | 2012-05-23 | 富士電機株式会社 | 誤差増幅回路およびスイッチング電源回路 |
JP5528667B2 (ja) | 2007-11-28 | 2014-06-25 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の制御方法 |
JP5309547B2 (ja) | 2007-12-13 | 2013-10-09 | カシオ計算機株式会社 | 薄膜トランジスタパネルおよびその製造方法 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP2009200944A (ja) | 2008-02-22 | 2009-09-03 | Oki Semiconductor Co Ltd | ヒステリシスコンパレータ |
JP5228567B2 (ja) * | 2008-03-26 | 2013-07-03 | ミツミ電機株式会社 | 昇圧型dc−dcコンバータ |
KR101496148B1 (ko) * | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
US8482329B2 (en) * | 2008-08-08 | 2013-07-09 | Lsi Corporation | High voltage input receiver with hysteresis using low voltage transistors |
US8129718B2 (en) * | 2008-08-28 | 2012-03-06 | Canon Kabushiki Kaisha | Amorphous oxide semiconductor and thin film transistor using the same |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
KR101472771B1 (ko) * | 2008-12-01 | 2014-12-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
TWI512997B (zh) | 2009-09-24 | 2015-12-11 | Semiconductor Energy Lab | 半導體裝置,電源電路,和半導體裝置的製造方法 |
KR101717460B1 (ko) | 2009-10-16 | 2017-03-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기 |
WO2011046015A1 (en) | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
KR101751908B1 (ko) | 2009-10-21 | 2017-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전압 조정 회로 |
WO2011052366A1 (en) | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Voltage regulator circuit |
KR101824124B1 (ko) | 2009-11-28 | 2018-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
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JP2020025147A (ja) | 2020-02-13 |
TW201203821A (en) | 2012-01-16 |
JP2015159301A (ja) | 2015-09-03 |
JP2023157952A (ja) | 2023-10-26 |
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US9270173B2 (en) | 2016-02-23 |
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JP7106720B2 (ja) | 2022-07-26 |
US8922182B2 (en) | 2014-12-30 |
JP6625188B2 (ja) | 2019-12-25 |
US20150108959A1 (en) | 2015-04-23 |
JP2022140487A (ja) | 2022-09-26 |
JP6189353B2 (ja) | 2017-08-30 |
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TWI502869B (zh) | 2015-10-01 |
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