JP5675443B2 - 配線基板及び配線基板の製造方法 - Google Patents
配線基板及び配線基板の製造方法 Download PDFInfo
- Publication number
- JP5675443B2 JP5675443B2 JP2011048021A JP2011048021A JP5675443B2 JP 5675443 B2 JP5675443 B2 JP 5675443B2 JP 2011048021 A JP2011048021 A JP 2011048021A JP 2011048021 A JP2011048021 A JP 2011048021A JP 5675443 B2 JP5675443 B2 JP 5675443B2
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- Prior art keywords
- layer
- metal layer
- pad
- insulating layer
- plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
- H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4661—Adding a circuit layer by direct wet plating, e.g. electroless plating; insulating materials adapted therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011048021A JP5675443B2 (ja) | 2011-03-04 | 2011-03-04 | 配線基板及び配線基板の製造方法 |
| US13/410,031 US9236334B2 (en) | 2011-03-04 | 2012-03-01 | Wiring substrate and method for manufacturing wiring substrates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011048021A JP5675443B2 (ja) | 2011-03-04 | 2011-03-04 | 配線基板及び配線基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012186296A JP2012186296A (ja) | 2012-09-27 |
| JP2012186296A5 JP2012186296A5 (enExample) | 2014-01-09 |
| JP5675443B2 true JP5675443B2 (ja) | 2015-02-25 |
Family
ID=46752589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011048021A Active JP5675443B2 (ja) | 2011-03-04 | 2011-03-04 | 配線基板及び配線基板の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9236334B2 (enExample) |
| JP (1) | JP5675443B2 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9117825B2 (en) | 2012-12-06 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate pad structure |
| TWI487444B (zh) * | 2013-05-07 | 2015-06-01 | Unimicron Technology Corp | 承載基板及其製作方法 |
| US9491871B2 (en) | 2013-05-07 | 2016-11-08 | Unimicron Technology Corp. | Carrier substrate |
| CN104168706B (zh) * | 2013-05-17 | 2017-05-24 | 欣兴电子股份有限公司 | 承载基板及其制作方法 |
| JP6266907B2 (ja) * | 2013-07-03 | 2018-01-24 | 新光電気工業株式会社 | 配線基板及び配線基板の製造方法 |
| JP6161437B2 (ja) * | 2013-07-03 | 2017-07-12 | 新光電気工業株式会社 | 配線基板及びその製造方法、半導体パッケージ |
| JP6131135B2 (ja) * | 2013-07-11 | 2017-05-17 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| JP6223909B2 (ja) * | 2013-07-11 | 2017-11-01 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| KR20150040577A (ko) * | 2013-10-07 | 2015-04-15 | 삼성전기주식회사 | 패키지 기판 |
| TWI550801B (zh) * | 2013-11-13 | 2016-09-21 | 南茂科技股份有限公司 | 封裝結構及其製造方法 |
| US20160233188A1 (en) * | 2013-12-02 | 2016-08-11 | Smartrac Technology Gmbh | Contact bumps methods of making contact bumps |
| KR20150064976A (ko) * | 2013-12-04 | 2015-06-12 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
| US10020275B2 (en) * | 2013-12-26 | 2018-07-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductive packaging device and manufacturing method thereof |
| US20150195912A1 (en) | 2014-01-08 | 2015-07-09 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Substrates With Ultra Fine Pitch Flip Chip Bumps |
| JP6133227B2 (ja) * | 2014-03-27 | 2017-05-24 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| KR102211741B1 (ko) * | 2014-07-21 | 2021-02-03 | 삼성전기주식회사 | 인쇄회로기판 및 인쇄회로기판의 제조 방법 |
| JP5795415B1 (ja) * | 2014-08-29 | 2015-10-14 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| JP6626687B2 (ja) * | 2015-10-28 | 2019-12-25 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
| JP2017084997A (ja) * | 2015-10-29 | 2017-05-18 | イビデン株式会社 | プリント配線板及びその製造方法 |
| JP6619294B2 (ja) * | 2016-05-24 | 2019-12-11 | 新光電気工業株式会社 | 配線基板及びその製造方法と電子部品装置 |
| JP6594264B2 (ja) * | 2016-06-07 | 2019-10-23 | 新光電気工業株式会社 | 配線基板及び半導体装置、並びにそれらの製造方法 |
| TWI712344B (zh) * | 2017-08-18 | 2020-12-01 | 景碩科技股份有限公司 | 可做電性測試的多層電路板及其製法 |
| TWI719241B (zh) * | 2017-08-18 | 2021-02-21 | 景碩科技股份有限公司 | 可做電性測試的多層電路板及其製法 |
| KR102531762B1 (ko) | 2017-09-29 | 2023-05-12 | 엘지이노텍 주식회사 | 인쇄회로기판 및 이의 제조 방법 |
| US10347507B2 (en) * | 2017-09-29 | 2019-07-09 | Lg Innotek Co., Ltd. | Printed circuit board |
| WO2019066977A1 (en) * | 2017-09-29 | 2019-04-04 | Intel Corporation | FIRST-LEVEL THIN-LEVEL INTERCONNECTIONS DEFINED BY AUTOCATALYTIC METAL FOR LITHOGRAPHIC INTERCONNECTION HOLES |
| KR102551747B1 (ko) | 2018-09-13 | 2023-07-06 | 삼성전자주식회사 | 반도체 패키지 |
| CN110783728A (zh) * | 2018-11-09 | 2020-02-11 | 广州方邦电子股份有限公司 | 一种柔性连接器及制作方法 |
| JP2020188209A (ja) * | 2019-05-16 | 2020-11-19 | イビデン株式会社 | プリント配線板とプリント配線板の製造方法 |
| US10950531B2 (en) * | 2019-05-30 | 2021-03-16 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
| US20210111110A1 (en) * | 2019-10-09 | 2021-04-15 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package |
| JP2021132068A (ja) * | 2020-02-18 | 2021-09-09 | イビデン株式会社 | プリント配線板、プリント配線板の製造方法 |
| US12191161B2 (en) * | 2020-12-23 | 2025-01-07 | Intel Corporation | Multi-step isotropic etch patterning of thick copper layers for forming high aspect-ratio conductors |
| CN116528466A (zh) * | 2022-01-21 | 2023-08-01 | 奥特斯奥地利科技与系统技术有限公司 | 具有突出部的部件承载件和制造方法 |
| KR20230140717A (ko) * | 2022-03-30 | 2023-10-10 | 엘지이노텍 주식회사 | 회로 기판 및 이를 포함하는 반도체 패키지 |
| CN116895636B (zh) * | 2023-09-11 | 2024-01-12 | 芯爱科技(南京)有限公司 | 封装基板及其制法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6010768A (en) * | 1995-11-10 | 2000-01-04 | Ibiden Co., Ltd. | Multilayer printed circuit board, method of producing multilayer printed circuit board and resin filler |
| DE69936235T2 (de) * | 1998-02-26 | 2007-09-13 | Ibiden Co., Ltd., Ogaki | Mehrschichtige Leiterplatte mit gefüllten Kontaktlöchern |
| DE19907168C1 (de) * | 1999-02-19 | 2000-08-10 | Micronas Intermetall Gmbh | Schichtanordnung sowie Verfahren zu deren Herstellung |
| JP3635219B2 (ja) | 1999-03-11 | 2005-04-06 | 新光電気工業株式会社 | 半導体装置用多層基板及びその製造方法 |
| US6457234B1 (en) * | 1999-05-14 | 2002-10-01 | International Business Machines Corporation | Process for manufacturing self-aligned corrosion stop for copper C4 and wirebond |
| JP2001217523A (ja) * | 2000-02-01 | 2001-08-10 | Rohm Co Ltd | チップ型半導体装置の実装構造 |
| US7838779B2 (en) | 2005-06-17 | 2010-11-23 | Nec Corporation | Wiring board, method for manufacturing same, and semiconductor package |
| JP4890959B2 (ja) * | 2005-06-17 | 2012-03-07 | 日本電気株式会社 | 配線基板及びその製造方法並びに半導体パッケージ |
| JP2008004687A (ja) * | 2006-06-21 | 2008-01-10 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
| TWI319615B (en) * | 2006-08-16 | 2010-01-11 | Phoenix Prec Technology Corp | Package substrate and manufacturing method thereof |
| US7595553B2 (en) * | 2006-11-08 | 2009-09-29 | Sanyo Electric Co., Ltd. | Packaging board and manufacturing method therefor, semiconductor module and mobile apparatus |
| TWI331494B (en) * | 2007-03-07 | 2010-10-01 | Unimicron Technology Corp | Circuit board structure |
| JP4800253B2 (ja) * | 2007-04-04 | 2011-10-26 | 新光電気工業株式会社 | 配線基板の製造方法 |
| JP2008258520A (ja) * | 2007-04-09 | 2008-10-23 | Shinko Electric Ind Co Ltd | 配線基板の製造方法及び配線基板 |
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2011
- 2011-03-04 JP JP2011048021A patent/JP5675443B2/ja active Active
-
2012
- 2012-03-01 US US13/410,031 patent/US9236334B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20120222894A1 (en) | 2012-09-06 |
| US9236334B2 (en) | 2016-01-12 |
| JP2012186296A (ja) | 2012-09-27 |
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