JP5547023B2 - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
- Publication number
- JP5547023B2 JP5547023B2 JP2010224475A JP2010224475A JP5547023B2 JP 5547023 B2 JP5547023 B2 JP 5547023B2 JP 2010224475 A JP2010224475 A JP 2010224475A JP 2010224475 A JP2010224475 A JP 2010224475A JP 5547023 B2 JP5547023 B2 JP 5547023B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductive film
- oxide semiconductor
- oxide
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 347
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 90
- 239000002184 metal Substances 0.000 claims description 89
- 238000000034 method Methods 0.000 claims description 80
- 230000015572 biosynthetic process Effects 0.000 claims description 65
- 229910044991 metal oxide Inorganic materials 0.000 claims description 61
- 150000004706 metal oxides Chemical class 0.000 claims description 61
- 238000005530 etching Methods 0.000 claims description 40
- 229910052738 indium Inorganic materials 0.000 claims description 40
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- 239000010408 film Substances 0.000 description 662
- 239000010410 layer Substances 0.000 description 166
- 239000010409 thin film Substances 0.000 description 76
- 239000010936 titanium Substances 0.000 description 74
- 239000000758 substrate Substances 0.000 description 70
- 229910052719 titanium Inorganic materials 0.000 description 67
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 64
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 62
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 56
- 229910052760 oxygen Inorganic materials 0.000 description 56
- 239000001301 oxygen Substances 0.000 description 56
- 239000002131 composite material Substances 0.000 description 50
- 239000000463 material Substances 0.000 description 49
- 239000004973 liquid crystal related substance Substances 0.000 description 47
- 238000004544 sputter deposition Methods 0.000 description 47
- 238000010438 heat treatment Methods 0.000 description 45
- 229910052782 aluminium Inorganic materials 0.000 description 39
- 229910007541 Zn O Inorganic materials 0.000 description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 36
- 229910052721 tungsten Inorganic materials 0.000 description 36
- 239000000956 alloy Substances 0.000 description 35
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 34
- 239000010937 tungsten Substances 0.000 description 34
- 229910045601 alloy Inorganic materials 0.000 description 33
- 230000008569 process Effects 0.000 description 32
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 32
- 229910052750 molybdenum Inorganic materials 0.000 description 31
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 28
- 239000011733 molybdenum Substances 0.000 description 28
- 239000012298 atmosphere Substances 0.000 description 26
- 239000011701 zinc Substances 0.000 description 26
- 239000007789 gas Substances 0.000 description 25
- 239000003094 microcapsule Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 229910052733 gallium Inorganic materials 0.000 description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 238000004364 calculation method Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 20
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 19
- 229910052725 zinc Inorganic materials 0.000 description 19
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 18
- 239000003990 capacitor Substances 0.000 description 18
- 235000016804 zinc Nutrition 0.000 description 18
- KELHQGOVULCJSG-UHFFFAOYSA-N n,n-dimethyl-1-(5-methylfuran-2-yl)ethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=C(C)O1 KELHQGOVULCJSG-UHFFFAOYSA-N 0.000 description 17
- 230000001681 protective effect Effects 0.000 description 17
- 229910052779 Neodymium Inorganic materials 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 16
- 239000004020 conductor Substances 0.000 description 16
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- -1 tungsten nitride Chemical class 0.000 description 16
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 239000011787 zinc oxide Substances 0.000 description 15
- 125000004429 atom Chemical group 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 14
- 239000004408 titanium dioxide Substances 0.000 description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 229910052804 chromium Inorganic materials 0.000 description 13
- 239000011651 chromium Substances 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 239000011159 matrix material Substances 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 11
- 150000002739 metals Chemical class 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 229910052715 tantalum Inorganic materials 0.000 description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 10
- 239000002585 base Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 10
- 238000005192 partition Methods 0.000 description 10
- 239000000049 pigment Substances 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 239000012463 white pigment Substances 0.000 description 10
- 206010021143 Hypoxia Diseases 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 9
- 230000005669 field effect Effects 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229910003437 indium oxide Inorganic materials 0.000 description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 229910052706 scandium Inorganic materials 0.000 description 7
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910003087 TiOx Inorganic materials 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 238000000329 molecular dynamics simulation Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004696 Poly ether ether ketone Substances 0.000 description 4
- 239000004697 Polyetherimide Substances 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 4
- 239000002609 medium Substances 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920002492 poly(sulfone) Polymers 0.000 description 4
- 229920001230 polyarylate Polymers 0.000 description 4
- 229920001707 polybutylene terephthalate Polymers 0.000 description 4
- 229920002530 polyetherether ketone Polymers 0.000 description 4
- 229920001601 polyetherimide Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910019092 Mg-O Inorganic materials 0.000 description 3
- 229910019395 Mg—O Inorganic materials 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001307 laser spectroscopy Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920002689 polyvinyl acetate Polymers 0.000 description 2
- 239000011118 polyvinyl acetate Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004698 pseudo-potential method Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 2
- 101100392125 Caenorhabditis elegans gck-1 gene Proteins 0.000 description 1
- 102100022887 GTP-binding nuclear protein Ran Human genes 0.000 description 1
- 101000774835 Heteractis crispa PI-stichotoxin-Hcr2o Proteins 0.000 description 1
- 101000620756 Homo sapiens GTP-binding nuclear protein Ran Proteins 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 101100393821 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GSP2 gene Proteins 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical compound [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003098 cholesteric effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroluminescent Light Sources (AREA)
Description
本実施の形態では、In−Ga−Zn−O系酸化物半導体膜を薄膜トランジスタの活性層として用いたチャネルエッチ構造の薄膜トランジスタにおいて、ソース電極またはドレイン電極として用いる金属膜と、In−Ga−Zn−O系酸化物半導体膜との界面近傍において、インジウムの濃度が他の領域よりも高い層(Inリッチな層)と、酸化チタン膜(TiOX)が形成される現象について、計算科学により検証した。
Edef=E(AmOn−1)+E(O)−E(AmOn)
n=N×exp(−Edef/kBT)
本実施の形態では、酸化物半導体膜をチャネル形成領域に有する薄膜トランジスタの構成について、チャネルエッチ構造のボトムゲート型を例に挙げて説明する。
本実施の形態では、実施の形態2で示した薄膜トランジスタ201とは構造が異なるボトムコンタクト型の薄膜トランジスタの構成について説明する。なお、実施の形態2と同一部分又は同様な機能を有する部分については、実施の形態2の記載を参照することができるため、繰り返しの説明は省略する。
本実施の形態では、実施の形態2で示した薄膜トランジスタ201または実施の形態3で示した薄膜トランジスタ211とは構造が異なる、チャネル保護構造のボトムゲート型の薄膜トランジスタの構成について説明する。なお、実施の形態2と同一部分又は同様な機能を有する部分については、実施の形態2の記載を参照することができるため、繰り返しの説明は省略する。
本実施の形態では、本発明の半導体表示装置の一つである、電子ペーパー或いはデジタルペーパーと呼ばれる半導体表示装置の構成について説明する。
アクティブマトリクス型の半導体表示装置のブロック図の一例を図15(A)に示す。表示装置の基板5300上には、画素部5301、第1の走査線駆動回路5302、第2の走査線駆動回路5303、信号線駆動回路5304を有する。画素部5301には、複数の信号線が信号線駆動回路5304から延伸して配置され、複数の走査線が第1の走査線駆動回路5302、及び第2の走査線駆動回路5303から延伸して配置されている。なお走査線と信号線との交差領域には、各々、表示素子を有する画素がマトリクス状に配置されている。また、表示装置の基板5300はFPC(Flexible Printed Circuit)等の接続部を介して、タイミング制御回路5305(コントローラ、制御ICともいう)に接続されている。
本実施の形態では、本発明の一態様に係る半導体表示装置の作製方法について、図19乃至図24を用いて説明する。
本発明の一態様に係る液晶表示装置は、移動度及びオン電流が高く、なおかつ信頼性の高い薄膜トランジスタを用いているため、コントラスト及び視認性が高い。本実施の形態では、本発明の一態様に係る液晶表示装置の構成について説明する。
本実施の形態では、本発明の一態様に係る薄膜トランジスタを画素に用いた、発光装置の構成について説明する。本実施の形態では、発光素子を駆動させるためのトランジスタがn型の場合における、画素の断面構造について、図26を用いて説明する。なお図26では、第1の電極が陰極、第2の電極が陽極の場合について説明するが、第1の電極が陽極、第2の電極が陰極であっても良い。
11 配線
12 配線
13 配線
14 配線
15 配線
21 入力端子
22 入力端子
23 入力端子
24 入力端子
25 入力端子
26 出力端子
27 出力端子
31 トランジスタ
32 トランジスタ
33 トランジスタ
34 トランジスタ
35 トランジスタ
36 トランジスタ
37 トランジスタ
38 トランジスタ
39 トランジスタ
40 トランジスタ
41 トランジスタ
42 トランジスタ
43 トランジスタ
51 電源線
52 電源線
53 電源線
201 薄膜トランジスタ
202 基板
203 ゲート電極
204 ゲート絶縁膜
205 酸化物半導体膜
206 ソース電極
207 ドレイン電極
208 酸化物絶縁膜
209 導電膜
210 絶縁膜
211 薄膜トランジスタ
212 基板
213 ゲート電極
214 ゲート絶縁膜
215 酸化物半導体膜
216 ソース電極
217 ドレイン電極
218 酸化物絶縁膜
219 導電膜
220 絶縁膜
221 薄膜トランジスタ
222 基板
223 ゲート電極
224 ゲート絶縁膜
225 酸化物半導体膜
226 ソース電極
227 ドレイン電極
228 酸化物絶縁膜
229 導電膜
230 絶縁膜
231 チャネル保護膜
250 複合層
251 金属酸化膜
260 複合層
261 金属酸化膜
270 複合層
271 金属酸化膜
400 基板
401 ゲート電極
402 ゲート絶縁膜
403 酸化物半導体膜
404 酸化物半導体膜
405 酸化物半導体膜
406 導電膜
408 容量配線
409 酸化物半導体膜
411 酸化物絶縁膜
412 酸化物半導体膜
413 薄膜トランジスタ
414 画素電極
415 透明導電膜
416 透明導電膜
420 端子
421 端子
430 複合層
431 金属酸化膜
700 画素部
701 信号線駆動回路
702 走査線駆動回路
703 画素
704 トランジスタ
705 表示素子
706 保持容量
707 信号線
708 走査線
710 画素電極
711 対向電極
712 マイクロカプセル
713 ドレイン電極
714 樹脂
1401 薄膜トランジスタ
1402 ゲート電極
1403 ゲート絶縁膜
1404 酸化物半導体膜
1406 導電膜
1407 酸化物絶縁膜
1408 絶縁膜
1410 画素電極
1411 配向膜
1413 対向電極
1414 配向膜
1415 液晶
1416 シール材
1417 スペーサ
1420 複合層
1421 金属酸化膜
1601 液晶パネル
1602 拡散板
1603 プリズムシート
1604 拡散板
1605 導光板
1606 反射板
1607 光源
1608 回路基板
1609 FPC
1610 FPC
407a ソース電極
407b ドレイン電極
5300 基板
5301 画素部
5302 走査線駆動回路
5303 走査線駆動回路
5304 信号線駆動回路
5305 タイミング制御回路
5601 シフトレジスタ
5602 サンプリング回路
5603 トランジスタ
5604 配線
5605 配線
6031 トランジスタ
6033 発光素子
6034 電極
6035 電界発光層
6036 電極
6037 絶縁膜
6038 隔壁
6041 トランジスタ
6043 発光素子
6044 電極
6045 電界発光層
6046 電極
6047 絶縁膜
6048 隔壁
6051 トランジスタ
6053 発光素子
6054 電極
6055 電界発光層
6056 電極
6057 絶縁膜
6058 隔壁
7001 筐体
7002 表示部
7011 筐体
7012 表示部
7013 支持台
7021 筐体
7022 表示部
7031 筐体
7032 筐体
7033 表示部
7034 表示部
7035 マイクロホン
7036 スピーカー
7037 操作キー
7038 スタイラス
7041 筐体
7042 表示部
7043 音声入力部
7044 音声出力部
7045 操作キー
7046 受光部
Claims (6)
- 第1の導電膜と、
前記第1の導電膜上の絶縁膜と、
前記絶縁膜上の、インジウムを含む酸化物半導体膜と、
前記酸化物半導体膜の第1の部分と重なる第2の導電膜と、
前記酸化物半導体膜の第2の部分と重なる第3の導電膜と、
前記酸化物半導体膜の第3の部分と接する酸化物絶縁膜と、を有し、
前記第3の部分は、前記第1の部分と前記第2の部分との間に設けられ、
前記第3の部分は、チャネル形成領域を含み、
前記第2の導電膜及び前記第3の導電膜は、前記第1の部分乃至前記第3の部分に接して設けられた第4の導電膜をエッチングする工程を経て形成されたものであり、
前記酸化物絶縁膜は、前記第2の導電膜及び前記第3の導電膜上に設けられ、
前記第2の導電膜及び前記第3の導電膜は、金属酸化物を形成することができる金属を含み、
前記第1の部分及び前記第2の部分は、それぞれ第1の領域と第2の領域とを有し、
前記第1の領域は、前記酸化物半導体膜の上面を含み、且つ前記第2の導電膜または前記第3の導電膜と重なり、
前記第2の領域は、前記第1の領域よりも前記第1の導電膜側に位置し、
前記第1の領域のインジウムの濃度は、前記第2の領域のインジウムの濃度よりも高く、
前記第1の部分と前記第2の導電膜との間には、前記第2の導電膜に含まれる前記金属の酸化物があり、
前記第2の部分と前記第3の導電膜との間には、前記第3の導電膜に含まれる前記金属の酸化物があることを特徴とする半導体装置。 - 第1の導電膜と、
前記第1の導電膜上の絶縁膜と、
前記絶縁膜上の、インジウムを含む酸化物半導体膜と、
前記酸化物半導体膜の第1の部分と重なる第2の導電膜と、
前記酸化物半導体膜の第2の部分と重なる第3の導電膜と、
前記酸化物半導体膜の第3の部分と接する酸化物絶縁膜と、を有し、
前記第3の部分は、前記第1の部分と前記第2の部分との間に設けられ、
前記第3の部分は、チャネル形成領域を含み、
前記第2の導電膜及び前記第3の導電膜は、前記第1の部分乃至前記第3の部分に接して設けられた第4の導電膜をエッチングする工程を経て形成されたものであり、
前記酸化物絶縁膜は、前記第2の導電膜及び前記第3の導電膜上に設けられ、
前記第2の導電膜及び前記第3の導電膜は、金属酸化物を形成することができる金属を含み、
前記第1の部分及び前記第2の部分は、それぞれ第1の領域と第2の領域とを有し、
前記第1の領域は、前記酸化物半導体膜の上面を含み、且つ前記第2の導電膜または前記第3の導電膜と重なり、
前記第2の領域は、前記第1の領域よりも前記第1の導電膜側に位置し、
前記酸化物半導体膜は金属元素を含み、
前記第1の領域の前記金属元素の濃度は、前記第2の領域の前記金属元素の濃度よりも高く、
前記第1の領域にはインジウムを含む結晶が存在し、
前記第1の部分と前記第2の導電膜との間には、前記第2の導電膜に含まれる前記金属の酸化物があり、
前記第2の部分と前記第3の導電膜との間には、前記第3の導電膜に含まれる前記金属の酸化物があることを特徴とする半導体装置。 - 請求項1または請求項2において、
前記第3の部分は、前記第1の部分よりも膜厚が小さい部分を有し、
前記第3の部分は、前記第2の部分より膜厚が小さい部分を有することを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記酸化物絶縁膜は、酸化珪素を有することを特徴とする半導体装置。 - 第1の導電膜と、
前記第1の導電膜上の絶縁膜と、
前記絶縁膜上の、インジウムを含む酸化物半導体膜と、
前記酸化物半導体膜の第1の部分と重なる第2の導電膜と、
前記酸化物半導体膜の第2の部分と重なる第3の導電膜と、
前記酸化物半導体膜の第3の部分と接する酸化物絶縁膜と、有し、
前記第3の部分は、前記第1の部分と前記第2の部分との間に設けられ、
前記第3の部分は、チャネル形成領域を含む半導体装置の作製方法であって、
前記第1の部分乃至前記第3の部分に接して設けられた第4の導電膜をエッチングすることにより、前記第2の導電膜と前記第3の導電膜とは形成され、且つ前記第3の部分は露出され、
前記エッチング後に、前記酸化物絶縁膜は、前記第3の部分に接するように形成され、
前記第1の部分及び前記第2の部分は、それぞれ第1の領域と第2の領域とを有し、
前記第1の領域は、前記酸化物半導体膜の上面を含み、且つ前記第2の導電膜または前記第3の導電膜と重なり、
前記第2の領域は、前記第1の領域よりも前記第1の導電膜側に位置し、
前記第1の領域のインジウムの濃度は、前記第2の領域のインジウムの濃度よりも高く、
前記第1の部分と前記第2の導電膜との間には、前記第2の導電膜に含まれる金属の酸化物があり、
前記第2の部分と前記第3の導電膜との間には、前記第3の導電膜に含まれる金属の酸化物があることを特徴とする半導体装置の作製方法。 - 第1の導電膜と、
前記第1の導電膜上の絶縁膜と、
前記絶縁膜上の、インジウムを含む酸化物半導体膜と、
前記酸化物半導体膜の第1の部分と重なる第2の導電膜と、
前記酸化物半導体膜の第2の部分と重なる第3の導電膜と、
前記酸化物半導体膜の第3の部分と接する酸化物絶縁膜と、有し、
前記第3の部分は、前記第1の部分と前記第2の部分との間に設けられ、
前記第3の部分は、チャネル形成領域を含む半導体装置の作製方法であって、
前記第1の部分乃至前記第3の部分に接して設けられた第4の導電膜をエッチングすることにより、前記第2の導電膜と前記第3の導電膜とは形成され、且つ前記第3の部分は露出され、
前記エッチング後に、前記酸化物絶縁膜は、前記第3の部分に接するように形成され、
前記第1の部分及び前記第2の部分は、それぞれ第1の領域と第2の領域とを有し、
前記第1の領域は、前記酸化物半導体膜の上面を含み、且つ前記第2の導電膜または前記第3の導電膜と重なり、
前記第2の領域は、前記第1の領域よりも前記第1の導電膜側に位置し、
前記酸化物半導体膜は金属元素を含み、
前記第1の領域の前記金属元素の濃度は、前記第2の領域の前記金属元素の濃度よりも高く、
前記第1の領域にはインジウムを含む結晶が存在し、
前記第1の部分と前記第2の導電膜との間には、前記第2の導電膜に含まれる金属の酸化物があり、
前記第2の部分と前記第3の導電膜との間には、前記第3の導電膜に含まれる金属の酸化物があることを特徴とする半導体装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010224475A JP5547023B2 (ja) | 2009-10-09 | 2010-10-04 | 半導体装置およびその作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009235570 | 2009-10-09 | ||
JP2009235570 | 2009-10-09 | ||
JP2010224475A JP5547023B2 (ja) | 2009-10-09 | 2010-10-04 | 半導体装置およびその作製方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013085446A Division JP2013145922A (ja) | 2009-10-09 | 2013-04-16 | 半導体装置 |
JP2014100159A Division JP5893671B2 (ja) | 2009-10-09 | 2014-05-14 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011100982A JP2011100982A (ja) | 2011-05-19 |
JP2011100982A5 JP2011100982A5 (ja) | 2013-11-14 |
JP5547023B2 true JP5547023B2 (ja) | 2014-07-09 |
Family
ID=43854120
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010224475A Active JP5547023B2 (ja) | 2009-10-09 | 2010-10-04 | 半導体装置およびその作製方法 |
JP2013085446A Withdrawn JP2013145922A (ja) | 2009-10-09 | 2013-04-16 | 半導体装置 |
JP2014100159A Active JP5893671B2 (ja) | 2009-10-09 | 2014-05-14 | 半導体装置 |
JP2016033385A Active JP6113877B2 (ja) | 2009-10-09 | 2016-02-24 | 半導体装置 |
JP2017049630A Withdrawn JP2017108185A (ja) | 2009-10-09 | 2017-03-15 | 半導体装置 |
JP2019072466A Expired - Fee Related JP6778780B2 (ja) | 2009-10-09 | 2019-04-05 | 半導体装置の作製方法 |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013085446A Withdrawn JP2013145922A (ja) | 2009-10-09 | 2013-04-16 | 半導体装置 |
JP2014100159A Active JP5893671B2 (ja) | 2009-10-09 | 2014-05-14 | 半導体装置 |
JP2016033385A Active JP6113877B2 (ja) | 2009-10-09 | 2016-02-24 | 半導体装置 |
JP2017049630A Withdrawn JP2017108185A (ja) | 2009-10-09 | 2017-03-15 | 半導体装置 |
JP2019072466A Expired - Fee Related JP6778780B2 (ja) | 2009-10-09 | 2019-04-05 | 半導体装置の作製方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US8779418B2 (ja) |
JP (6) | JP5547023B2 (ja) |
KR (4) | KR102142835B1 (ja) |
TW (2) | TWI574418B (ja) |
WO (1) | WO2011043218A1 (ja) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5439837B2 (ja) * | 2009-02-10 | 2014-03-12 | ソニー株式会社 | 表示装置 |
WO2011043162A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
KR102142835B1 (ko) | 2009-10-09 | 2020-08-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011043164A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
KR20170143023A (ko) * | 2009-10-21 | 2017-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작방법 |
KR101818265B1 (ko) * | 2009-11-06 | 2018-01-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101876470B1 (ko) * | 2009-11-06 | 2018-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20120107079A (ko) | 2009-11-20 | 2012-09-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 |
KR20190093705A (ko) | 2009-11-27 | 2019-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작방법 |
US8883555B2 (en) * | 2010-08-25 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, manufacturing method of electronic device, and sputtering target |
JP2012094853A (ja) * | 2010-09-30 | 2012-05-17 | Kobe Steel Ltd | 配線構造 |
JP5636867B2 (ja) * | 2010-10-19 | 2014-12-10 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5429718B2 (ja) | 2011-03-08 | 2014-02-26 | 合同会社先端配線材料研究所 | 酸化物半導体用電極、その形成方法 |
US8716073B2 (en) * | 2011-07-22 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing oxide semiconductor film and method for manufacturing semiconductor device |
JP6023994B2 (ja) * | 2011-08-15 | 2016-11-09 | Nltテクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
TWI605590B (zh) | 2011-09-29 | 2017-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
WO2013058226A1 (ja) * | 2011-10-21 | 2013-04-25 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP5856559B2 (ja) * | 2011-12-02 | 2016-02-10 | 株式会社神戸製鋼所 | 薄膜トランジスタの半導体層用酸化物薄膜の製造方法 |
JP5838119B2 (ja) | 2012-04-24 | 2015-12-24 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ及びそれを用いた表示装置 |
DE112013007836B3 (de) | 2012-07-20 | 2023-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
WO2014014039A1 (en) | 2012-07-20 | 2014-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the display device |
JP6300489B2 (ja) * | 2012-10-24 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2014069260A1 (ja) * | 2012-10-29 | 2014-05-08 | シャープ株式会社 | アクティブマトリクス基板および液晶表示装置 |
US9246011B2 (en) * | 2012-11-30 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2014103901A1 (en) | 2012-12-25 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9893192B2 (en) * | 2013-04-24 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6400961B2 (ja) | 2013-07-12 | 2018-10-03 | 株式会社半導体エネルギー研究所 | 表示装置 |
US9362413B2 (en) * | 2013-11-15 | 2016-06-07 | Cbrite Inc. | MOTFT with un-patterned etch-stop |
KR102123979B1 (ko) * | 2013-12-09 | 2020-06-17 | 엘지디스플레이 주식회사 | 리페어 구조를 갖는 유기발광표시장치 |
US20150287793A1 (en) * | 2014-04-03 | 2015-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, module, and electronic device |
KR102333604B1 (ko) * | 2014-05-15 | 2021-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이 반도체 장치를 포함하는 표시 장치 |
JP6444745B2 (ja) * | 2015-01-22 | 2018-12-26 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
DE112016002769T5 (de) * | 2015-06-19 | 2018-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren dafür und elektronisches Gerät |
WO2017073097A1 (ja) * | 2015-10-29 | 2017-05-04 | 三菱電機株式会社 | 薄膜トランジスタ基板およびその製造方法 |
KR102517127B1 (ko) | 2015-12-02 | 2023-04-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 유기 발광 표시 장치 |
WO2017149413A1 (en) * | 2016-03-04 | 2017-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10388738B2 (en) * | 2016-04-01 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and method for manufacturing the same |
JP6668455B2 (ja) | 2016-04-01 | 2020-03-18 | 株式会社半導体エネルギー研究所 | 酸化物半導体膜の作製方法 |
KR101831186B1 (ko) * | 2016-06-30 | 2018-02-22 | 엘지디스플레이 주식회사 | 코플라나 형태의 산화물 박막트랜지스터 및 그 제조 방법과, 이를 이용한 표시패널 및 표시장치 |
JP2018022879A (ja) * | 2016-07-20 | 2018-02-08 | 株式会社リコー | 電界効果型トランジスタ、及びその製造方法、並びに表示素子、画像表示装置、及びシステム |
TWI715699B (zh) * | 2016-10-21 | 2021-01-11 | 日商半導體能源硏究所股份有限公司 | 複合氧化物及電晶體 |
JP6867832B2 (ja) * | 2017-03-09 | 2021-05-12 | 三菱電機株式会社 | アレイ基板、液晶表示装置、薄膜トランジスタ、およびアレイ基板の製造方法 |
EP3783654B1 (en) * | 2018-04-20 | 2022-10-26 | Sony Group Corporation | Image-capture element, stacked image-capture element, and solid image-capture device |
JP7137979B2 (ja) * | 2018-07-09 | 2022-09-15 | キオクシア株式会社 | 半導体装置 |
JP7206887B2 (ja) * | 2018-12-19 | 2023-01-18 | 凸版印刷株式会社 | 有機薄膜トランジスタおよび電子装置 |
US11791420B2 (en) * | 2021-04-19 | 2023-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method for manufacturing the same |
US11869975B2 (en) | 2021-04-19 | 2024-01-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin-film transistors and method for manufacturing the same |
Family Cites Families (128)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JP2934874B2 (ja) * | 1990-05-21 | 1999-08-16 | カシオ計算機株式会社 | 薄膜トランジスタの製造方法 |
JPH0563172A (ja) * | 1991-09-02 | 1993-03-12 | Hitachi Ltd | 半導体装置とその製造方法 |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
DE69635107D1 (de) * | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
JP3625598B2 (ja) * | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4663829B2 (ja) * | 1998-03-31 | 2011-04-06 | 三菱電機株式会社 | 薄膜トランジスタおよび該薄膜トランジスタを用いた液晶表示装置 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) * | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) * | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
CN1426572B (zh) * | 2000-11-09 | 2010-05-26 | 索尼公司 | 卡状电子仪器用保持器具 |
KR20020038482A (ko) * | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) * | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) * | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
US7061014B2 (en) * | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP4083486B2 (ja) * | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) * | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) * | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) * | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) * | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7282782B2 (en) * | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
EP1737044B1 (en) * | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7145174B2 (en) * | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
JP4628004B2 (ja) * | 2004-03-26 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
JP2005302808A (ja) * | 2004-04-07 | 2005-10-27 | Sharp Corp | 薄膜トランジスタアレイ基板の製造方法 |
US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) * | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) * | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) * | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
CA2708335A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
EP1810335B1 (en) * | 2004-11-10 | 2020-05-27 | Canon Kabushiki Kaisha | Light-emitting device |
US7863611B2 (en) * | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7791072B2 (en) * | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
AU2005302964B2 (en) * | 2004-11-10 | 2010-11-04 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
US7829444B2 (en) * | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7453065B2 (en) * | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
JP5138163B2 (ja) * | 2004-11-10 | 2013-02-06 | キヤノン株式会社 | 電界効果型トランジスタ |
US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI569441B (zh) * | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI412138B (zh) * | 2005-01-28 | 2013-10-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) * | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) * | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) * | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) * | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) * | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) * | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) * | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) * | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) * | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) * | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) * | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
KR100851131B1 (ko) * | 2005-08-17 | 2008-08-08 | 가부시키가이샤 고베 세이코쇼 | 소스/드레인 전극, 박막 트랜지스터 기판, 그의 제조방법,및 표시 디바이스 |
JP2007059128A (ja) * | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4850457B2 (ja) * | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5116225B2 (ja) * | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4280736B2 (ja) * | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
EP1998375A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
JP5037808B2 (ja) * | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101112652B1 (ko) | 2005-11-15 | 2012-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액티브 매트릭스 디스플레이 장치 및 텔레비전 수신기 |
JP5250929B2 (ja) * | 2005-11-30 | 2013-07-31 | 凸版印刷株式会社 | トランジスタおよびその製造方法 |
TWI292281B (en) * | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) * | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) * | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) * | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) * | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) * | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) * | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
KR101014473B1 (ko) | 2006-06-02 | 2011-02-14 | 가시오게산키 가부시키가이샤 | 산화아연의 산화물 반도체 박막층을 포함하는 반도체 장치및 그 제조방법 |
JP5028033B2 (ja) * | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP5328083B2 (ja) | 2006-08-01 | 2013-10-30 | キヤノン株式会社 | 酸化物のエッチング方法 |
JP4609797B2 (ja) * | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) * | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) * | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) * | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) * | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) * | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) * | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) * | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101146574B1 (ko) * | 2006-12-05 | 2012-05-16 | 캐논 가부시끼가이샤 | 산화물 반도체를 이용한 박막 트랜지스터의 제조방법 및 표시장치 |
JP4785721B2 (ja) * | 2006-12-05 | 2011-10-05 | キヤノン株式会社 | エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液 |
KR101303578B1 (ko) * | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) * | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR101410926B1 (ko) | 2007-02-16 | 2014-06-24 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
KR100858088B1 (ko) * | 2007-02-28 | 2008-09-10 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
KR100851215B1 (ko) * | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) * | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) * | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) * | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) * | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) * | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
KR101345376B1 (ko) * | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
WO2008149873A1 (en) * | 2007-05-31 | 2008-12-11 | Canon Kabushiki Kaisha | Manufacturing method of thin film transistor using oxide semiconductor |
US7982216B2 (en) * | 2007-11-15 | 2011-07-19 | Fujifilm Corporation | Thin film field effect transistor with amorphous oxide active layer and display using the same |
JP2009123957A (ja) * | 2007-11-15 | 2009-06-04 | Sumitomo Chemical Co Ltd | 酸化物半導体材料及びその製造方法、電子デバイス及び電界効果トランジスタ |
JP5213422B2 (ja) | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
JP5213421B2 (ja) | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 酸化物半導体薄膜トランジスタ |
US8202365B2 (en) * | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP5213458B2 (ja) | 2008-01-08 | 2013-06-19 | キヤノン株式会社 | アモルファス酸化物及び電界効果型トランジスタ |
KR101496148B1 (ko) | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
JP2010056541A (ja) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4623179B2 (ja) * | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) * | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5328414B2 (ja) | 2009-02-25 | 2013-10-30 | 富士フイルム株式会社 | トップゲート型の電界効果型トランジスタ及びその製造方法並びにそれを備えた表示装置 |
JP5504008B2 (ja) * | 2009-03-06 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102142835B1 (ko) | 2009-10-09 | 2020-08-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
-
2010
- 2010-09-21 KR KR1020197003941A patent/KR102142835B1/ko active IP Right Grant
- 2010-09-21 KR KR1020207022455A patent/KR102329380B1/ko active IP Right Grant
- 2010-09-21 KR KR1020127011944A patent/KR101754701B1/ko active IP Right Grant
- 2010-09-21 KR KR1020177018103A patent/KR101949670B1/ko active IP Right Grant
- 2010-09-21 WO PCT/JP2010/066747 patent/WO2011043218A1/en active Application Filing
- 2010-10-04 JP JP2010224475A patent/JP5547023B2/ja active Active
- 2010-10-05 TW TW104127879A patent/TWI574418B/zh active
- 2010-10-05 TW TW099133864A patent/TWI508289B/zh active
- 2010-10-07 US US12/900,136 patent/US8779418B2/en active Active
-
2013
- 2013-04-16 JP JP2013085446A patent/JP2013145922A/ja not_active Withdrawn
-
2014
- 2014-05-14 JP JP2014100159A patent/JP5893671B2/ja active Active
- 2014-07-01 US US14/320,742 patent/US9443874B2/en active Active
-
2016
- 2016-02-24 JP JP2016033385A patent/JP6113877B2/ja active Active
- 2016-08-22 US US15/242,802 patent/US10141450B2/en active Active
-
2017
- 2017-03-15 JP JP2017049630A patent/JP2017108185A/ja not_active Withdrawn
-
2019
- 2019-04-05 JP JP2019072466A patent/JP6778780B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW201547027A (zh) | 2015-12-16 |
KR101949670B1 (ko) | 2019-02-19 |
JP5893671B2 (ja) | 2016-03-23 |
US20140312345A1 (en) | 2014-10-23 |
WO2011043218A1 (en) | 2011-04-14 |
KR102142835B1 (ko) | 2020-08-10 |
JP6778780B2 (ja) | 2020-11-04 |
KR20170081723A (ko) | 2017-07-12 |
TWI508289B (zh) | 2015-11-11 |
US20170040458A1 (en) | 2017-02-09 |
US20110084272A1 (en) | 2011-04-14 |
JP2017108185A (ja) | 2017-06-15 |
JP2014197686A (ja) | 2014-10-16 |
JP2011100982A (ja) | 2011-05-19 |
KR20200096679A (ko) | 2020-08-12 |
KR101754701B1 (ko) | 2017-07-06 |
KR20190018030A (ko) | 2019-02-20 |
JP2016131252A (ja) | 2016-07-21 |
JP2013145922A (ja) | 2013-07-25 |
KR20120084760A (ko) | 2012-07-30 |
JP6113877B2 (ja) | 2017-04-12 |
US8779418B2 (en) | 2014-07-15 |
TWI574418B (zh) | 2017-03-11 |
US10141450B2 (en) | 2018-11-27 |
KR102329380B1 (ko) | 2021-11-22 |
US9443874B2 (en) | 2016-09-13 |
JP2019106559A (ja) | 2019-06-27 |
TW201131768A (en) | 2011-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6778780B2 (ja) | 半導体装置の作製方法 | |
JP6640287B2 (ja) | 半導体装置 | |
JP6143320B2 (ja) | 半導体装置 | |
JP2021158384A (ja) | 半導体装置の作製方法 | |
JP2022172068A (ja) | 半導体装置 | |
JP5127914B2 (ja) | 半導体装置の作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130930 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130930 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20130930 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20131025 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131203 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140114 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140415 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140514 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5547023 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |