JP6444745B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 129
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 51
- 229910052738 indium Inorganic materials 0.000 claims description 49
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 49
- 239000010936 titanium Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 22
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 20
- 229910052733 gallium Inorganic materials 0.000 claims description 20
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 83
- 230000005669 field effect Effects 0.000 description 16
- 239000010409 thin film Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 14
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 11
- 229910052725 zinc Inorganic materials 0.000 description 11
- 239000011701 zinc Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
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- 238000001312 dry etching Methods 0.000 description 3
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- 229910000846 In alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
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- 150000001485 argon Chemical class 0.000 description 2
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- 238000001459 lithography Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
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- 230000005684 electric field Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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Description
本実施形態の半導体装置は、インジウム(In)、ガリウム(Ga)及び亜鉛(Zn)を含有する酸化物半導体のチャネル領域と、チャネル領域を間に挟んで設けられ、少なくとも一方の領域が、チャネル領域よりもインジウム(In)濃度が高く、且つ、チタン(Ti)、タングステン(W)、銅(Cu)、亜鉛(Zn)、アルミニウム(Al)、鉛(Pb)、スズ(Sn)の群から選ばれる少なくとも一つの金属元素を含有するソース領域及びドレイン領域と、チャネル領域上に設けられたゲート絶縁膜と、ゲート絶縁膜上に設けられたゲート電極と、を備える
本実施形態の半導体装置は、ゲート電極の両側に、ゲート側壁が設けられること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、ソース領域及びドレイン領域の少なくとも一方とチャネル領域との間に、チャネル領域よりもインジウム(In)濃度が低い領域を、更に備える点以外は、第2の実施形態と同様である。したがって、第2の実施形態と重複する内容については記述を省略する。
10a チャネル領域
11a ソース領域
11b ドレイン領域
12 ゲート絶縁膜
13a 低インジウム濃度領域
13b 低インジウム濃度領域
14 ゲート電極
16 金属膜
18 ゲート側壁
20 絶縁膜
100 半導体装置
200 半導体装置
300 半導体装置
Claims (14)
- インジウム(In)、ガリウム(Ga)及び亜鉛(Zn)を含有する酸化物半導体のチャネル領域と、
前記チャネル領域を間に挟んで設けられ、少なくとも一方の領域が、前記チャネル領域よりもインジウム(In)濃度が高く、且つ、チタン(Ti)、タングステン(W)、銅(Cu)、亜鉛(Zn)、アルミニウム(Al)、鉛(Pb)、スズ(Sn)の群から選ばれる少なくとも一つの金属元素を含有するソース領域及びドレイン領域と、
前記チャネル領域上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
を備える半導体装置。 - 前記ソース領域及び前記ドレイン領域の少なくとも一方の酸素濃度が、前記チャネル領域の酸素濃度よりも低い請求項1記載の半導体装置。
- 前記ソース領域及び前記ドレイン領域の少なくとも一方の亜鉛(Zn)濃度が、前記チャネル領域の亜鉛(Zn)濃度よりも低い請求項1又は請求項2記載の半導体装置。
- 前記ソース領域及び前記ドレイン領域の少なくとも一方のガリウム(Ga)濃度が、前記チャネル領域のガリウム(Ga)よりも低い請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記ソース領域及び前記ドレイン領域の少なくとも一方が、多結晶の金属である請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記チャネル領域が非晶質である請求項1乃至請求項5いずれか一項記載の半導体装置。
- 前記ゲート電極の両側に設けられたゲート側壁を、更に備える請求項1乃至請求項6いずれか一項記載の半導体装置。
- 前記ソース領域及び前記ドレイン領域の少なくとも一方と前記チャネル領域との間に、前記チャネル領域よりもインジウム(In)濃度が低い領域を、更に備える請求項1乃至請求項7いずれか一項記載の半導体装置。
- 前記酸化物半導体に、ハフニウム(Hf)、スズ(Sn)、アルミニウム(Al)、ジルコニウム(Zr)、リチウム(Li)、スカンジウム(Sc)、窒素(N)の群から選ばれる少なくとも一つの元素が含有される請求項1乃至請求項8いずれか一項記載の半導体装置。
- インジウム(In)、ガリウム(Ga)及び亜鉛(Zn)を含有する酸化物半導体層を形成し、
前記酸化物半導体層上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上にゲート電極を形成し、
前記ゲート電極の両側の前記酸化物半導体層上に、チタン(Ti)、タングステン(W)、銅(Cu)、亜鉛(Zn)、アルミニウム(Al)、鉛(Pb)、スズ(Sn)の群から選ばれる少なくとも一つの金属元素を含有する金属膜を形成し、
非酸化性雰囲気で、1秒以上5分以下の時間の熱処理を行い前記金属膜と前記酸化物半導体層を反応させて、前記ゲート電極直下の前記酸化物半導体層よりもインジウム(In)濃度が高く、且つ前記金属元素を含有する反応層を形成し、
ウェットエッチングにより未反応の前記金属膜を除去する半導体装置の製造方法。 - 前記金属膜の形成の前に、前記ゲート電極の両側にゲート側壁を形成する請求項10記載の製造方法。
- 前記熱処理の温度が200℃以上400℃以下である請求項10又は請求項11いずれか一項記載の半導体装置の製造方法。
- 前記ゲート電極の形成後、前記金属膜の形成の前に、プラズマ処理又は熱処理により前記ゲート電極の両側の前記酸化物半導体層のIn濃度を低下させる請求項10乃至請求項12いずれか一項記載の半導体装置の製造方法。
- インジウム(In)、ガリウム(Ga)及び亜鉛(Zn)を含有する酸化物半導体層を形成し、
前記酸化物半導体層上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上にゲート電極を形成し、
前記ゲート電極の両側の前記酸化物半導体層上に、チタン(Ti)、タングステン(W)、銅(Cu)、亜鉛(Zn)、アルミニウム(Al)、鉛(Pb)、スズ(Sn)の群から選ばれる少なくとも一つの金属元素を含有する金属膜を形成し、
非酸化性雰囲気で、1秒以上5分以下の時間の熱処理を行い前記金属膜と前記酸化物半導体層を反応させて反応層を形成し、
ウェットエッチングにより未反応の前記金属膜を除去し、
前記ゲート電極の形成後、前記金属膜の形成の前に、プラズマ処理又は熱処理により前記ゲート電極の両側の前記酸化物半導体層のIn濃度を低下させる半導体装置の製造方法。
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