JP5396030B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5396030B2
JP5396030B2 JP2008048322A JP2008048322A JP5396030B2 JP 5396030 B2 JP5396030 B2 JP 5396030B2 JP 2008048322 A JP2008048322 A JP 2008048322A JP 2008048322 A JP2008048322 A JP 2008048322A JP 5396030 B2 JP5396030 B2 JP 5396030B2
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film
orientation
plane
crystal
plane orientation
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Expired - Fee Related
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JP2008048322A
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JP2008252076A (ja
JP2008252076A5 (enExample
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智昭 森若
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2008048322A 2007-03-02 2008-02-28 半導体装置の作製方法 Expired - Fee Related JP5396030B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008048322A JP5396030B2 (ja) 2007-03-02 2008-02-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007052230 2007-03-02
JP2007052230 2007-03-02
JP2008048322A JP5396030B2 (ja) 2007-03-02 2008-02-28 半導体装置の作製方法

Publications (3)

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JP2008252076A JP2008252076A (ja) 2008-10-16
JP2008252076A5 JP2008252076A5 (enExample) 2011-02-24
JP5396030B2 true JP5396030B2 (ja) 2014-01-22

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JP2008048322A Expired - Fee Related JP5396030B2 (ja) 2007-03-02 2008-02-28 半導体装置の作製方法

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US (1) US7972943B2 (enExample)
JP (1) JP5396030B2 (enExample)
KR (1) KR101380639B1 (enExample)
CN (1) CN101256987B (enExample)
TW (1) TWI413192B (enExample)

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TWI479660B (zh) * 2006-08-31 2015-04-01 Semiconductor Energy Lab 薄膜電晶體，其製造方法，及半導體裝置
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US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
JP5593107B2 (ja) * 2009-04-02 2014-09-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8772627B2 (en) * 2009-08-07 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
KR20110107595A (ko) * 2010-03-25 2011-10-04 삼성전기주식회사 잉크젯 프린트 헤드의 제조 방법
CN102347350A (zh) * 2010-07-30 2012-02-08 中国科学院微电子研究所 一种半导体结构及其制造方法
KR101720533B1 (ko) * 2010-08-31 2017-04-03 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층 제조 방법을 포함하는 박막 트랜지스터의 제조 방법, 상기 방법에 의해 제조된 박막 트랜지스터, 및 상기 박막 트랜지스터를 포함하는 유기 발광 디스플레이 장치
KR101457833B1 (ko) 2010-12-03 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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JP2013149953A (ja) * 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
KR101960745B1 (ko) * 2012-11-14 2019-03-21 엘지디스플레이 주식회사 연성 표시소자 절단방법 및 이를 이용한 연성 표시소자 제조방법
KR101971202B1 (ko) * 2012-11-22 2019-04-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
KR101989560B1 (ko) 2012-12-31 2019-06-14 엔라이트 인크. Ltps 크리스탈화를 위한 짧은 펄스 섬유 레이저
JP2016103395A (ja) * 2014-11-28 2016-06-02 株式会社ジャパンディスプレイ 表示装置
JP2017037178A (ja) 2015-08-10 2017-02-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN107403724A (zh) * 2016-05-20 2017-11-28 稳懋半导体股份有限公司 化合物半导体集成电路的抗湿气结构
TWI617081B (zh) 2017-03-23 2018-03-01 國立中山大學 波導構造的製作方法
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US7972943B2 (en) 2011-07-05
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