JP5379339B2 - トレンチゲートmisデバイスの構造及び製造方法 - Google Patents
トレンチゲートmisデバイスの構造及び製造方法 Download PDFInfo
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- JP5379339B2 JP5379339B2 JP2003079667A JP2003079667A JP5379339B2 JP 5379339 B2 JP5379339 B2 JP 5379339B2 JP 2003079667 A JP2003079667 A JP 2003079667A JP 2003079667 A JP2003079667 A JP 2003079667A JP 5379339 B2 JP5379339 B2 JP 5379339B2
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Description
図18は、N+基板81上に成長させられたN−エピタキシャル層82に形成されたトレンチゲートMISデバイス80の部分図である。Pボディ領域83は、N−エピタキシャル層82に形成されている。ゲートトレンチ84は、N−エピタキシャル層82の上面上の酸化層89と接触しているゲート酸化層85によって裏打ちされている。
81 N+基板
82 N-エピタキシャル層
83 P-ボディ
84 トレンチ
85 ゲート酸化層
86 ポリシリコンゲート
87 上面
88 接触領域
140 正方形セル型MOSFET
141 活性領域
142 ゲート金属領域
143 ゲートフィンガー
144 ソース金属縁部
145 ゲート金属縁部
146 接触領域
147 幅の広い部分
148 ゲート金属
149 BPSG層
160 MOSFET
161 活性領域
162 ゲート金属領域
163 ゲートフィンガー
164 ソース金属縁部
165 ゲート金属縁部
166 接触領域
167 ゲートフィンガー
168 ゲート金属
300 N+基板
301 N−エピタキシャル層
302 フォトレジストトレンチマスク
303 トレンチ
304 ゲート酸化
305 ポリシリコン層
306 ポリシリコン層上面
307 N−エピタキシャル層の上面
308 BPSG層
309 フォトレジスト層
310 開口
311 ゲート接触開口
312 金属層
Claims (14)
- 半導体チップに形成されるトレンチゲートMISデバイスであって、
トランジスタセルを含む第1の活性領域と、
トランジスタセルを含む第2の活性領域と、
前記第1及び第2の活性領域の間に配置された、トランジスタセルを含まないゲート金属領域と、
前記第1及び第2の活性領域並びに前記ゲート金属領域上に位置する非導電層と、
前記ゲート金属領域内で前記非導電層上に位置するゲート金属層とを含み、
前記半導体チップの表面のパターンに、前記第1の活性領域から前記ゲート金属領域に至る第1の複数のトレンチが形成されると共に前記第2の活性領域から前記ゲート金属領域に至る第2の複数のトレンチが形成され、
前記第1及び第2の複数のトレンチは、絶縁材料の層で覆われた壁部を有し、その内部に導電性ゲート材料が充填され、該導電性ゲート材料の上面は前記半導体チップの上面より下側に位置し、
前記ゲート金属層は、前記トレンチの各々の上方の一部で前記非導電層に設けられた開口を充填することにより、該トレンチの内部の前記導電性ゲート材料の上面に接触すると共に前記非導電層が前記トレンチの各々の上部のトレンチ曲り部から該トレンチ内の前記導電性ゲート材料の上面へと延び、
前記ゲート金属領域には、前記第1及び第2の複数のトレンチの少なくとも一方の一部の両側に沿って離間して延在するように、前記ゲート金属層と電気的に接続されていない1対の追加のトレンチが設けられ、前記第1及び第2の複数のトレンチの少なくとも一方の一部の下方の等電位面を平坦化するようにしたことを特徴とするトレンチゲートMISデバイス。 - 前記ゲート金属領域に形成されたトレンチをさらに有し、該トレンチは、前記絶縁材料の層で覆われた壁部を有し、前記導電性ゲート材料が前記トレンチ内に設けられており、前記第1及び第2の複数のトレンチは、複数の第1のゲートフィンガーであり、前記トレンチは、第2のゲートフィンガーであり、該第2のゲートフィンガーは、前記第1のゲートフィンガーとの交差部を有すると共に該第1のゲートフィンガーと直角であることを特徴とする請求項1に記載のトレンチゲートMISデバイス。
- 前記ゲート金属層が、前記ゲート金属領域の前記第1及び第2の複数のトレンチの方向に対して直角をなす方向に細長く延在することを特徴とする請求項2に記載のトレンチゲートMISデバイス。
- 前記第2のゲートフィンガーの幅が前記第1のゲートフィンガーの幅よりも広く、前記ゲート金属領域における前記第2のゲートフィンガーの上側の前記非導電層に形成された開口をさらに有し、ゲート金属が前記ゲート材料と接触するように、前記開口が前記ゲート金属で満たされていることを特徴とする請求項2に記載のトレンチゲートMISデバイス。
- 前記ゲート金属領域における前記第2のゲートフィンガーの一部分の上側の前記非導電層に形成された開口をさらに有し、該一部分が、前記第1のゲートフィンガーと前記第2のゲートフィンガーとの間の前記交差部に至らないと共に、ゲート金属が前記ゲート材料と接触するように、前記開口が前記ゲート金属で満たされていることを特徴とする請求項2に記載のトレンチゲートMISデバイス。
- 前記第2のゲートフィンガーの幅が、前記交差部において前記第2のゲートフィンガーの他の部分の幅よりも狭いことを特徴とする請求項5に記載のトレンチゲートMISデバイス。
- 前記第1のゲートフィンガーが前記第2のゲートフィンガーで終わり、これによりT字状交差部を形成し、前記ゲート金属領域における前記第2のゲートフィンガーの上側の前記非導電層に形成された開口をさらに有し、ゲート金属が前記ゲート材料と接触するように、前記開口が前記ゲート金属で満たされていることを特徴とする請求項2に記載のトレンチゲートMISデバイス。
- 前記第1のゲートフィンガーの少なくとも1つが前記第1の活性領域から延び、前記第1のゲートフィンガーの少なくとも1つは、前記第2の活性領域から延びることを特徴とする請求項7に記載のトレンチゲートMISデバイス。
- 前記第1の活性領域から延びる前記第1のゲートフィンガーの少なくとも1つと前記第2の活性領域から延びる前記第1のゲートフィンガーの少なくとも1つとは、前記第2のゲートフィンガーの反対側に位置することを特徴とする請求項8に記載のトレンチゲートMISデバイス。
- 前記第1の複数のトレンチ及び前記第2の複数のトレンチは、第1のゲートフィンガーであることを特徴とする請求項1に記載のトレンチゲートMISデバイス。
- 前記第1の活性領域から延びる少なくとも1つの前記第1のゲートフィンガーが前記ゲート金属領域で第1の幅の広い部分を含み、前記第2の活性領域から延びる少なくとも1つの前記第1のゲートフィンガーが前記ゲート金属領域で第2の幅の広い部分を含むことを特徴とする請求項10に記載のトレンチゲートゲートMISデバイス。
- 前記ゲート金属領域における前記第1の幅の広い部分の上側の前記非導電層に形成された第1の開口をさらに有し、ゲート金属が前記ゲート材料と接触するように、前記第1の開口が前記ゲート金属で満たされていることを特徴とする請求項11に記載のトレンチゲートMISデバイス。
- 前記ゲート金属領域における前記第2の幅の広い部分の上側の前記非導電層に形成された第2の開口をさらに有し、ゲート金属が前記ゲート材料と接触するように、前記第2の開口が前記ゲート金属で満たされていることを特徴とする請求項12に記載のトレンチゲートMISデバイス。
- 前記第1及び第2の幅の広い部分が、前記第1のゲートフィンガーに平行な方向に互いにオフセットされていることを特徴とする請求項13に記載のトレンチゲートMISデバイス。
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US7335946B1 (en) | 2008-02-26 |
US6838722B2 (en) | 2005-01-04 |
EP2511955A2 (en) | 2012-10-17 |
CN101980356B (zh) | 2013-04-03 |
JP5651097B2 (ja) | 2015-01-07 |
CN100433366C (zh) | 2008-11-12 |
US7005347B1 (en) | 2006-02-28 |
US9324858B2 (en) | 2016-04-26 |
EP2511955A3 (en) | 2013-07-03 |
CN101980356A (zh) | 2011-02-23 |
EP2511955B1 (en) | 2017-07-05 |
US20040113201A1 (en) | 2004-06-17 |
US20110042742A1 (en) | 2011-02-24 |
JP2012060147A (ja) | 2012-03-22 |
EP1351313A2 (en) | 2003-10-08 |
US7868381B1 (en) | 2011-01-11 |
EP1351313A3 (en) | 2007-12-26 |
JP2003309263A (ja) | 2003-10-31 |
CN101369532B (zh) | 2010-10-27 |
CN101369532A (zh) | 2009-02-18 |
EP1351313B1 (en) | 2016-01-20 |
CN1455459A (zh) | 2003-11-12 |
US20030178673A1 (en) | 2003-09-25 |
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