JP5302275B2 - 半導体素子の接触部及びその製造方法並びに表示装置用薄膜トランジスタ表示板及びその製造方法 - Google Patents
半導体素子の接触部及びその製造方法並びに表示装置用薄膜トランジスタ表示板及びその製造方法 Download PDFInfo
- Publication number
- JP5302275B2 JP5302275B2 JP2010161992A JP2010161992A JP5302275B2 JP 5302275 B2 JP5302275 B2 JP 5302275B2 JP 2010161992 A JP2010161992 A JP 2010161992A JP 2010161992 A JP2010161992 A JP 2010161992A JP 5302275 B2 JP5302275 B2 JP 5302275B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- edge
- conductive film
- conductor
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 130
- 239000004065 semiconductor Substances 0.000 title claims description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000001039 wet etching Methods 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 372
- 239000004020 conductor Substances 0.000 claims description 93
- 238000005530 etching Methods 0.000 claims description 41
- 239000012535 impurity Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 34
- 230000001681 protective effect Effects 0.000 claims description 23
- 239000011651 chromium Substances 0.000 claims description 22
- 238000001312 dry etching Methods 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 14
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims 25
- 230000002093 peripheral effect Effects 0.000 claims 4
- 239000011241 protective layer Substances 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- 238000003860 storage Methods 0.000 description 50
- 239000003990 capacitor Substances 0.000 description 47
- 239000004973 liquid crystal related substance Substances 0.000 description 28
- 238000007689 inspection Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000000523 sample Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910000667 (NH4)2Ce(NO3)6 Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
前記下部導電膜上にアルミニウム系の金属により形成されており、縁部が全周に亘って前記下部導電膜の縁部より内側に離間して位置する上部導電膜と、
前記上部導電膜の縁部及び前記下部導電膜の縁部をともに含む全周の縁部のうち、少なくとも一部の縁部を露出する接触孔を有する絶縁膜と、
前記絶縁膜上に形成されていて前記接触孔を通じて前記上部導電膜及び前記下部導電膜と接触しているIZO層とを含むことを特徴とする半導体素子の接触部を提供する。
下部膜121pの縁(輪郭線)は上部膜121qの縁付近に位置し、上部膜121pの縁とほとんど平行である。上部膜121qの縁は下部膜121pの上に位置して、上下の縁の間隔は、何処にあっても、ほとんど同一になっている。これにより、下部膜121pの上側表面が外部に露出されて下部膜121pと上部膜121qの側面が全体的に階段形状をなす。また、下部膜121pと上部膜121qの側面は各々傾いており、その傾斜角が基板110の表面に対して約30〜80゜となるように、エッチング条件を調整する。この条件は、等方性エッチングでは自動的に満足されるが、異方性エッチングでは、薬剤の選定・配合などを実験的に設定する必要がある。
データ線171、ドレーン電極175及び維持蓄電器用導電体177もまた、モリブデン(Mo)、モリブデン合金、クロム(Cr)などの下部膜171p、175p、177pとその上に位置したアルミニウム系列金属である上部膜171q、175q、177qからなる。
(2)チャンネル領域(C)に位置した感光膜の第2部分54を除去、
(3)チャンネル領域(C)に位置した導電体層170及び不純物非晶質シリコン層160のそれぞれ第2部分を除去、そして
(4)配線領域(A)に位置した感光膜の第1部分52を除去。
(2)チャンネル領域(C)に位置した感光膜の第2部分54除去、
(3)その他の領域(B)に位置した不純物非晶質シリコン層160及び真性非晶質シリコン層150の各第3部分を除去、
(4)チャンネル領域(C)に位置した導電体層170の第2部分除去、
(5)配線領域(A)に位置した感光膜の第1部分52除去、そして
(6)チャンネル領域(C)に位置した不純物非晶質シリコン層160の第2部分除去。
44、50、66、68 感光膜
52 感光膜の第1部分
54 感光膜の第2部分
70 基板
72p、121p、171p、174p、175p、177p 下部膜
72q、121q、171q、174q、175q、177q 上部膜
74 絶縁膜
75 接触孔
76 IZO導電体
78 レジスト膜
92、97 接触補助部材
100、200 表示板
110 基板
121 ゲート線
123 ゲート電極
125 ゲート線の端部分
127 拡張部
131 維持電極線
140 ゲート絶縁膜
151、157、154 半導体
160 不純物非晶質シリコン層
161、165、163 抵抗性接触部材
171 データ線
173 ソース電極
174 導電体
175 ドレイン電極
177 維持蓄電器用導電体
179 データ線の端部分
180 保護膜
182、185、187、189 接触孔
186 溝または孔
190 画素電極
270 共通電極
d 接触孔内周と下部膜縁との間隔
Claims (18)
- クロム(Cr)、モリブデン(Mo)またはモリブデン合金からなり、パターン化された下部導電膜と、
前記下部導電膜上にアルミニウム系の金属により形成されており、縁部が全周に亘って前記下部導電膜の縁部より内側に離間して位置する上部導電膜と、
前記上部導電膜の縁部及び前記下部導電膜の縁部をともに含む全周の縁部のうち、前記上部導電膜の縁部の少なくとも一部及び前記下部導電膜の縁部の少なくとも一部の縁部の双方にまたがる領域を露出する接触孔を有する絶縁膜と、
前記絶縁膜上に形成されていて前記接触孔を通じて前記上部導電膜及び前記下部導電膜と接触しているIZO層とを含むことを特徴とする半導体素子の接触部。 - 前記下部導電膜の縁部は、何処にあっても、前記上部導電膜の縁部と同一な距離だけ離れていることを特徴とする、請求項1に記載の半導体素子の接触部。
- クロム(Cr)、モリブデン(Mo)またはモリブデン合金からなる下部導電膜を積層する段階と、
前記下部導電膜上にアルミニウム系の金属からなる上部導電膜を積層する段階と、
前記上部導電膜上に感光膜を形成する段階と、
前記感光膜をエッチングマスクとして前記上部導電膜を等方性または弱異方性でエッチングし前記感光膜の下部にアンダーカットを作る段階と、
前記感光膜をエッチングマスクとして前記下部導電膜を、上下方向にエッチングが進行する異方性の乾式エッチングをし、前記上部導電膜の縁部が全周に亘って前記下部導電膜の縁部より内側に離間するように形成する段階と、
前記上部導電膜の縁部及び前記下部導電膜の縁部をともに含む全周の縁部のうち、前記上部導電膜の縁部の少なくとも一部及び前記下部導電膜の縁部の少なくとも一部の縁部の双方にまたがる領域を露出する接触孔を有する絶縁膜を形成する段階と、
前記絶縁膜上に前記接触孔を通じて前記上部導電膜及び前記下部導電膜と接触するIZO層を形成する段階と
を含むことを特徴とする半導体素子の接触部形成方法。 - 絶縁基板上に形成されているゲート導電体と、
前記ゲート導電体上に形成されているゲート絶縁膜と、
前記ゲート絶縁膜上部に形成されている半導体層と、
少なくとも一部分が前記半導体層上部に形成されているデータ導電体と、
前記データ導電体上に形成されている保護膜と、
前記保護膜上部に形成されているIZO導電体とを含み、
前記ゲート導電体又は前記データ導電体のうちの少なくとも一方は、上下方向にエッチングが進行する異方性の乾式エッチングによりパターン化され、クロム(Cr)、モリブデン(Mo)またはモリブデン合金からなる下部膜と、前記下部膜上に位置しアルミニウム系の金属からなり、等方性または弱異方性でエッチングされ、縁部が全周に亘って前記下部膜の縁部より内側に離間して位置する上部膜と、を含み、前記IZO導電体は、前記上部膜の縁部及び前記下部膜の縁部をともに含む全周の縁部のうち、前記上部導電膜の縁部の少なくとも一部及び前記下部導電膜の縁部の少なくとも一部の縁部の双方にまたがる領域を露出する、前記ゲート絶縁膜又は前記保護膜の接触孔を介して前記上部膜及び前記下部膜と接触することを特徴とする薄膜トランジスタ表示板。 - 前記下部膜の縁と前記上部膜の縁の間の距離は均一であることを特徴とする、請求項4に記載の薄膜トランジスタ表示板。
- 前記下部膜の厚さは500Å以下であることを特徴とする、請求項4に記載の薄膜トランジスタ表示板。
- 前記データ導電体は互いに分離されているデータ線とドレーン電極を含み、
前記IZO導電体は前記ドレーン電極と接触する画素電極、前記ゲート導電体の一部分と接触するゲート接触補助部材及び前記データ線の一部分と接触するデータ接触補助部材を含むことを特徴とする、請求項4に記載の薄膜トランジスタ表示板。 - 前記データ線と前記ドレーン電極の間の部分を除いた前記半導体層は前記データ導電体と同一な平面模様を有することを特徴とする、請求項7に記載の薄膜トランジスタ表示板。
- 前記保護膜は前記半導体層と接触することを特徴とする、請求項4に記載の薄膜トランジスタ表示板。
- 絶縁基板上にゲート導電体を形成する段階と、
ゲート絶縁膜を形成する段階と、
半導体層を形成する段階と、
データ線とドレーン電極を含むデータ導電体を形成する段階と、
前記半導体層を覆って前記ゲート導電体及び前記データ導電体のうちの少なくとも一つの一部を露出する接触孔を有する保護膜を形成する段階と、
前記保護膜上部に前記接触孔を通じて前記ゲート導電体及び前記データ導電体のうちの少なくとも一つと連結されているIZO導電体を形成する段階とを含み、
前記ゲート導電体及び前記データ導電体のうちの少なくとも一つは、上下方向にエッチングが進行する異方性の乾式エッチングによりパターン化され、クロム(Cr)、モリブデン(Mo)またはモリブデン合金からなる下部膜と、アルミニウム系の金属からなり、等方性または弱異方性でエッチングされ、縁部が全周に亘って前記下部膜の縁部より内側に離間して位置する上部膜を含み、
前記IZO導電体は、前記上部膜の縁部及び前記下部膜の縁部をともに含む全周の縁部のうち、前記上部導電膜の縁部の少なくとも一部及び前記下部導電膜の縁部の少なくとも一部の縁部の双方にまたがる領域を露出する前記接触孔を介して前記上部膜及び前記下部膜と接触することを特徴とする薄膜トランジスタ表示板の製造方法。 - 前記ゲート導電体及び前記データ導電体のうちの少なくとも一つの形成段階は、
下部導電膜と上部導電膜を順次に積層する段階と、
前記上部導電膜上に感光膜を形成する段階と、
前記上部膜を湿式エッチングする段階と、
前記下部膜を乾式エッチングする段階とを含むことを特徴とする、請求項10に記載の薄膜トランジスタ表示板の製造方法。 - 前記下部膜の厚さは500Å以下であることを特徴とする、請求項11に記載の薄膜トランジスタ表示板の製造方法。
- 前記半導体層は真性膜と不純物膜を含むことを特徴とする、請求項10に記載の薄膜トランジスタ表示板の製造方法。
- 前記データ導電体と前記半導体層の形成は一つの感光膜を使用したエッチング工程によって行われ、前記感光膜は配線領域に位置し第1厚さを有する第1部分と前記データ線と前記ドレーン電極の間のチャンネル領域に位置し、前記第1厚さより薄い厚さを有する第2部分及びその他の領域に位置し、前記感光膜が形成されていない第3部分を含むことを特徴とする、請求項13に記載の薄膜トランジスタ表示板の製造方法。
- 前記感光膜は一つのマスクを使用して形成することを特徴とする、請求項14に記載の薄膜トランジスタ表示板の製造方法。
- 前記ゲート絶縁膜、前記真性膜、前記不純物膜及び前記データ導電体の形成段階は、
前記配線領域に位置した第1部分、前記チャンネル領域に位置した第2部分、前記その他の領域に位置した第3部分を各々含む前記ゲート絶縁膜、真性非晶質シリコン層、不純物非晶質シリコン層及び下部膜と上部膜を順次に積層する段階と、
前記上部膜上に感光膜を塗布する段階と、
前記感光膜を前記マスクを通じて露光する段階と、
前記感光膜を現像する段階と、
前記上部膜、前記下部膜、前記不純物非晶質シリコン層及び前記真性非晶質シリコン層の前記第3部分、そして前記感光膜、前記上部膜、前記下部膜及び前記不純物非晶質シリコン層の前記第2部分を除去して前記データ導電体、前記不純物膜及び前記真性膜を形成する段階と、
前記感光膜を除去する段階とを含むことを特徴とする、請求項15に記載の薄膜トランジスタ表示板の製造方法。 - 前記データ導電体、前記不純物膜及び前記真性膜の形成段階は、
湿式エッチングを実施して前記上部膜の第3部分を除去し前記下部膜の第3部分を露出させる段階と、
乾式エッチングを実施して前記下部膜の第3部分を除去し前記不純物非晶質シリコン層の第3部分を露出させる段階と、
乾式エッチングを実施して前記不純物非晶質シリコン層及び前記真性非晶質シリコン層の第3部分と前記感光膜の前記第2部分を除去し前記上部膜の第2部分を露出して前記真性非晶質シリコン層からなる前記真性膜を完成する段階と、
前記上部膜の第2部分を除去する段階と、
前記下部膜の第2部分を除去して前記データ導電体を完成する段階と、
前記不純物非晶質シリコン層の第2部分を除去して前記不純物膜を完成する段階と、
前記感光膜の第1部分を除去する段階とを含むことを特徴とする、請求項16に記載の薄膜トランジスタ表示板の製造方法。 - 前記感光膜の第1部分除去段階は前記上部膜の第2部分除去段階と前記下部膜の第2部分除去段階の間に行われることを特徴とする、請求項17に記載の薄膜トランジスタ表示板の製造方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020052509A KR100870014B1 (ko) | 2002-09-02 | 2002-09-02 | 박막 트랜지스터 기판 |
KR2002-052509 | 2002-09-02 | ||
KR2002-053220 | 2002-09-04 | ||
KR1020020053220A KR100870009B1 (ko) | 2002-09-04 | 2002-09-04 | 배선의 접촉부 및 그 제조 방법과 이를 포함하는 박막트랜지스터 어레이 기판 및 그 제조 방법 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003309757A Division JP2004096115A (ja) | 2002-09-02 | 2003-09-02 | 半導体素子の接触部及びその製造方法並びに表示装置用薄膜トランジスタ表示板及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010271732A JP2010271732A (ja) | 2010-12-02 |
JP5302275B2 true JP5302275B2 (ja) | 2013-10-02 |
Family
ID=31497749
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003309757A Pending JP2004096115A (ja) | 2002-09-02 | 2003-09-02 | 半導体素子の接触部及びその製造方法並びに表示装置用薄膜トランジスタ表示板及びその製造方法 |
JP2010161992A Expired - Fee Related JP5302275B2 (ja) | 2002-09-02 | 2010-07-16 | 半導体素子の接触部及びその製造方法並びに表示装置用薄膜トランジスタ表示板及びその製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003309757A Pending JP2004096115A (ja) | 2002-09-02 | 2003-09-02 | 半導体素子の接触部及びその製造方法並びに表示装置用薄膜トランジスタ表示板及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7294855B2 (ja) |
EP (1) | EP1394597B1 (ja) |
JP (2) | JP2004096115A (ja) |
CN (1) | CN100465704C (ja) |
DE (1) | DE60336441D1 (ja) |
TW (1) | TWI293138B (ja) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8514340B2 (en) * | 2002-11-08 | 2013-08-20 | Lg Display Co., Ltd. | Method of fabricating array substrate having double-layered patterns |
JP4802462B2 (ja) * | 2004-07-27 | 2011-10-26 | 三菱電機株式会社 | 薄膜トランジスタアレイ基板の製造方法 |
KR20060016920A (ko) * | 2004-08-19 | 2006-02-23 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR100699995B1 (ko) * | 2004-09-02 | 2007-03-26 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그 제조 방법 |
KR101102261B1 (ko) | 2004-09-15 | 2012-01-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US7394158B2 (en) * | 2004-10-21 | 2008-07-01 | Siliconix Technology C.V. | Solderable top metal for SiC device |
KR101100883B1 (ko) * | 2004-11-08 | 2012-01-02 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
US7602199B2 (en) * | 2006-05-31 | 2009-10-13 | Applied Materials, Inc. | Mini-prober for TFT-LCD testing |
US7786742B2 (en) * | 2006-05-31 | 2010-08-31 | Applied Materials, Inc. | Prober for electronic device testing on large area substrates |
KR20080019398A (ko) * | 2006-08-28 | 2008-03-04 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101394434B1 (ko) * | 2007-06-29 | 2014-05-15 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 구동 방법 |
KR101072379B1 (ko) * | 2007-07-20 | 2011-10-11 | 엘지디스플레이 주식회사 | 리프트오프 방법 및 이를 이용한 액정표시장치용 어레이기판의 제조방법 |
CN101424837B (zh) * | 2007-11-02 | 2010-08-25 | 上海中航光电子有限公司 | 液晶显示装置阵列基板的制造方法 |
KR20090110485A (ko) * | 2008-04-18 | 2009-10-22 | 삼성전자주식회사 | 표시 기판, 이를 이용한 액정 표시 장치 및 어레이 기판의제조방법 |
CN101261962B (zh) * | 2008-04-24 | 2010-08-18 | 友达光电股份有限公司 | 有源元件阵列基板及其制造方法 |
TWI500159B (zh) * | 2008-07-31 | 2015-09-11 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
TWI570937B (zh) * | 2008-07-31 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JP5627071B2 (ja) | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
CN101930930B (zh) * | 2009-06-26 | 2012-01-25 | 比亚迪股份有限公司 | 一种在氧化铟锡玻璃基板上形成铬铝铬金属走线的方法 |
TWI746064B (zh) * | 2009-08-07 | 2021-11-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
CN102034749B (zh) * | 2009-09-25 | 2013-09-04 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法 |
KR101320787B1 (ko) * | 2010-07-21 | 2013-10-23 | 샤프 가부시키가이샤 | 기판 및 그 제조방법, 표시장치 |
JP5848918B2 (ja) * | 2010-09-03 | 2016-01-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101750430B1 (ko) * | 2010-11-29 | 2017-06-26 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
KR20210034703A (ko) * | 2011-01-28 | 2021-03-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 및 반도체 장치 |
US8709920B2 (en) * | 2011-02-24 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN102446732A (zh) * | 2011-11-29 | 2012-05-09 | 上海华力微电子有限公司 | 提高多次曝光稳定性的栅极返工工艺 |
KR20140020565A (ko) * | 2012-08-09 | 2014-02-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조방법 |
KR102290801B1 (ko) * | 2013-06-21 | 2021-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
JP2015228426A (ja) * | 2014-06-02 | 2015-12-17 | 大日本印刷株式会社 | 配線部材 |
CN104865765B (zh) * | 2015-06-19 | 2018-10-30 | 合肥鑫晟光电科技有限公司 | 阵列基板及制作方法、显示面板及制作方法和显示装置 |
CN105068325A (zh) * | 2015-08-31 | 2015-11-18 | 深圳市华星光电技术有限公司 | Psva型液晶显示面板 |
CN105116642B (zh) * | 2015-09-24 | 2018-07-17 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
JP2017143108A (ja) * | 2016-02-08 | 2017-08-17 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
KR102598970B1 (ko) * | 2016-07-29 | 2023-11-06 | 엘지디스플레이 주식회사 | 유기발광 다이오드 표시장치 |
CN106206324B (zh) * | 2016-08-31 | 2019-03-26 | 深圳市华星光电技术有限公司 | 一种金属绝缘层半导体结构的制造方法 |
CN107037655A (zh) * | 2017-05-26 | 2017-08-11 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示器件 |
WO2021007774A1 (zh) * | 2019-07-16 | 2021-01-21 | 京东方科技集团股份有限公司 | 阵列基板、显示面板、显示装置和阵列基板的制作方法 |
CN111710652A (zh) * | 2020-06-12 | 2020-09-25 | 信利(仁寿)高端显示科技有限公司 | 一种tft基板的连接孔制作方法及tft基板 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04253342A (ja) * | 1991-01-29 | 1992-09-09 | Oki Electric Ind Co Ltd | 薄膜トランジスタアレイ基板 |
TW409194B (en) * | 1995-11-28 | 2000-10-21 | Sharp Kk | Active matrix substrate and liquid crystal display apparatus and method for producing the same |
KR100190023B1 (ko) * | 1996-02-29 | 1999-06-01 | 윤종용 | 박막트랜지스터-액정표시장치 및 그 제조방법 |
KR100307385B1 (ko) | 1997-03-05 | 2001-12-15 | 구본준, 론 위라하디락사 | 액정표시장치의구조및그제조방법 |
US6333518B1 (en) * | 1997-08-26 | 2001-12-25 | Lg Electronics Inc. | Thin-film transistor and method of making same |
JP3102392B2 (ja) | 1997-10-28 | 2000-10-23 | 日本電気株式会社 | 半導体デバイスおよびその製造方法 |
KR100316072B1 (ko) | 1997-12-10 | 2002-11-27 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치 제조 방법 및 그 구조 |
KR100590742B1 (ko) * | 1998-05-11 | 2007-04-25 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 |
JP4184522B2 (ja) | 1999-01-29 | 2008-11-19 | 富士通株式会社 | 薄膜トランジスタ基板 |
JP3463006B2 (ja) * | 1998-10-26 | 2003-11-05 | シャープ株式会社 | 液晶表示装置の製造方法および液晶表示装置 |
US6255130B1 (en) * | 1998-11-19 | 2001-07-03 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and a method for manufacturing the same |
JP2000267595A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | 表示装置用アレイ基板の製造方法 |
US6218221B1 (en) * | 1999-05-27 | 2001-04-17 | Chi Mei Optoelectronics Corp. | Thin film transistor with a multi-metal structure and a method of manufacturing the same |
US6380559B1 (en) * | 1999-06-03 | 2002-04-30 | Samsung Electronics Co., Ltd. | Thin film transistor array substrate for a liquid crystal display |
KR100333273B1 (ko) * | 1999-08-02 | 2002-04-24 | 구본준, 론 위라하디락사 | 박막트랜지스터형 액정표시장치의 어레이기판과 그 제조방법 |
US6885064B2 (en) * | 2000-01-07 | 2005-04-26 | Samsung Electronics Co., Ltd. | Contact structure of wiring and a method for manufacturing the same |
KR100366768B1 (ko) * | 2000-04-19 | 2003-01-09 | 삼성전자 주식회사 | 배선의 접촉부 및 그의 제조 방법과 이를 포함하는 박막 트랜지스터 기판 및 그 제조 방법 |
JP4630420B2 (ja) * | 2000-05-23 | 2011-02-09 | ティーピーオー ホンコン ホールディング リミテッド | パターン形成方法 |
KR100751185B1 (ko) * | 2000-08-08 | 2007-08-22 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
JP4342711B2 (ja) * | 2000-09-20 | 2009-10-14 | 株式会社日立製作所 | 液晶表示装置の製造方法 |
TWI220029B (en) * | 2000-10-12 | 2004-08-01 | Au Optronics Corp | Thin film transistor liquid crystal display and its manufacturing method |
KR100720095B1 (ko) * | 2000-11-07 | 2007-05-18 | 삼성전자주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100729764B1 (ko) | 2000-11-15 | 2007-06-20 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 |
KR100750919B1 (ko) | 2001-02-05 | 2007-08-22 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
KR20020083249A (ko) * | 2001-04-26 | 2002-11-02 | 삼성전자 주식회사 | 배선의 접촉 구조 및 그의 제조 방법과 이를 포함하는박막 트랜지스터 기판 및 그 제조 방법 |
KR100412619B1 (ko) * | 2001-12-27 | 2003-12-31 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판의 제조 방법 |
-
2003
- 2003-09-01 EP EP03019534A patent/EP1394597B1/en not_active Expired - Fee Related
- 2003-09-01 DE DE60336441T patent/DE60336441D1/de not_active Expired - Lifetime
- 2003-09-02 CN CNB031648053A patent/CN100465704C/zh not_active Expired - Fee Related
- 2003-09-02 US US10/653,556 patent/US7294855B2/en not_active Expired - Fee Related
- 2003-09-02 TW TW092124224A patent/TWI293138B/zh not_active IP Right Cessation
- 2003-09-02 JP JP2003309757A patent/JP2004096115A/ja active Pending
-
2007
- 2007-10-19 US US11/875,199 patent/US7883942B2/en not_active Expired - Fee Related
-
2010
- 2010-07-16 JP JP2010161992A patent/JP5302275B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040041149A1 (en) | 2004-03-04 |
TW200500759A (en) | 2005-01-01 |
CN1495478A (zh) | 2004-05-12 |
US7883942B2 (en) | 2011-02-08 |
CN100465704C (zh) | 2009-03-04 |
JP2004096115A (ja) | 2004-03-25 |
DE60336441D1 (de) | 2011-05-05 |
EP1394597B1 (en) | 2011-03-23 |
EP1394597A2 (en) | 2004-03-03 |
JP2010271732A (ja) | 2010-12-02 |
US20080044996A1 (en) | 2008-02-21 |
TWI293138B (en) | 2008-02-01 |
US7294855B2 (en) | 2007-11-13 |
EP1394597A3 (en) | 2006-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5302275B2 (ja) | 半導体素子の接触部及びその製造方法並びに表示装置用薄膜トランジスタ表示板及びその製造方法 | |
JP4883878B2 (ja) | 配線の接触構造及びその製造方法とこれを含む薄膜トランジスタ基板及びその製造方法 | |
US7649581B2 (en) | Array substrate of an LCD comprising first and second gate insulating layers and method of fabricating the same | |
JP4544860B2 (ja) | 半導体素子の接触部の製造方法、並びにこれを含む液晶表示装置用薄膜トランジスタアレイ基板の製造方法 | |
US7666697B2 (en) | Thin film transistor substrate and method of manufacturing the same | |
JP5096006B2 (ja) | 接触部及びその製造方法、薄膜トランジスタ表示板及びその製造方法 | |
US20070138481A1 (en) | Thin film transistor array panel and manufacturing method thereof | |
KR100480333B1 (ko) | 액정표시장치용 어레이기판과 그 제조방법 | |
JP2005122182A (ja) | 表示素子用の薄膜トランジスタ基板及び製造方法 | |
US7422916B2 (en) | Method of manufacturing thin film transistor panel | |
KR100886241B1 (ko) | 액정표시소자의 제조방법 | |
JP4578402B2 (ja) | 薄膜トランジスタ基板及びその製造方法 | |
KR100799463B1 (ko) | 액정표시장치 및 그 제조방법 | |
JP4731897B2 (ja) | 薄膜トランジスタ表示板とその製造方法 | |
KR100783702B1 (ko) | 박막 트랜지스터 기판 및 그 제조 방법 | |
JP2006078643A (ja) | 半透過型液晶表示装置およびその製造方法 | |
KR100874643B1 (ko) | 액정표시소자 및 그 제조방법 | |
KR100997963B1 (ko) | 박막 트랜지스터 표시판 및 그의 제조 방법 | |
KR101160823B1 (ko) | 박막 트랜지스터 표시판과 그 제조 방법 | |
JP4799926B2 (ja) | 半透過型tftアレイ基板、および半透過型液晶表示装置 | |
KR100656910B1 (ko) | 박막 트랜지스터 기판 및 그 제조 방법 | |
KR20050055384A (ko) | 액정표시패널 및 그 제조 방법 | |
KR20050114399A (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110620 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120411 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120417 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120713 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120713 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20121213 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130325 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130409 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130521 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130611 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130620 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5302275 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |