JP5241855B2 - Ｉｉｉ族窒化物ウエハを製造する方法およびｉｉｉ族窒化物ウエハ - Google Patents

Ｉｉｉ族窒化物ウエハを製造する方法およびｉｉｉ族窒化物ウエハ Download PDF

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JP5241855B2
JP5241855B2 JP2010540956A JP2010540956A JP5241855B2 JP 5241855 B2 JP5241855 B2 JP 5241855B2 JP 2010540956 A JP2010540956 A JP 2010540956A JP 2010540956 A JP2010540956 A JP 2010540956A JP 5241855 B2 JP5241855 B2 JP 5241855B2
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group iii
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iii nitride
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JP2011509231A5 (enExample
JP2011509231A (ja
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忠朗 橋本
エドワード レッツ，
真憲 碇
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シックスポイント マテリアルズ， インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2010540956A 2008-02-25 2009-02-25 Ｉｉｉ族窒化物ウエハを製造する方法およびｉｉｉ族窒化物ウエハ Active JP5241855B2 (ja)

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US6711708P 2008-02-25 2008-02-25
US61/067,117 2008-02-25
PCT/US2009/035140 WO2009108700A1 (en) 2008-02-25 2009-02-25 Method for producing group iii nitride wafers and group iii nitride wafers

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JP2013028632A Active JP5657042B2 (ja) 2008-02-25 2013-02-18 Ｉｉｉ族窒化物ウエハを製造する方法およびｉｉｉ族窒化物ウエハ

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WO (1) WO2009108700A1 (enExample)

Cited By (4)

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JP2013126945A (ja) * 2008-02-25 2013-06-27 Sixpoint Materials Inc Ｉｉｉ族窒化物ウエハを製造する方法およびｉｉｉ族窒化物ウエハ
US8764903B2 (en) 2009-05-05 2014-07-01 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
US9985102B2 (en) 2008-06-04 2018-05-29 Sixpoint Materials, Inc. Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
US10087548B2 (en) 2006-04-07 2018-10-02 Sixpoint Materials, Inc. High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal

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JP5377521B2 (ja) 2008-06-12 2013-12-25 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物ウェハーを試験する方法および試験データを伴うｉｉｉ族窒化物ウェハー
WO2010045567A1 (en) * 2008-10-16 2010-04-22 Sixpoint Materials, Inc. Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
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CN101760772B (zh) * 2009-12-30 2012-01-11 苏州纳维科技有限公司 一种用于氨热法生长氮化物的反应装置
JP6444249B2 (ja) * 2015-04-15 2018-12-26 株式会社ディスコ ウエーハの生成方法
JP6451563B2 (ja) * 2015-09-08 2019-01-16 株式会社豊田中央研究所 窒化ガリウム結晶及びその製造方法、並びに、結晶成長装置
JP2017088430A (ja) * 2015-11-05 2017-05-25 三菱化学株式会社 ＧａＮウエハ
CN116695239B (zh) * 2023-04-14 2025-07-04 珠海庞纳微半导体科技有限公司 一种氮化铝薄膜的制备方法及基于氮化铝薄膜的器件

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US20170175295A1 (en) 2017-06-22
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