JP5184508B2 - インプリント・リソグラフィ・システム - Google Patents
インプリント・リソグラフィ・システム Download PDFInfo
- Publication number
- JP5184508B2 JP5184508B2 JP2009504286A JP2009504286A JP5184508B2 JP 5184508 B2 JP5184508 B2 JP 5184508B2 JP 2009504286 A JP2009504286 A JP 2009504286A JP 2009504286 A JP2009504286 A JP 2009504286A JP 5184508 B2 JP5184508 B2 JP 5184508B2
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- JP
- Japan
- Prior art keywords
- field
- layout
- patterned
- imprint
- template
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/62—Holders for the original
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
Description
Claims (11)
- 基板上にパターン形成された複数の第1のフィールド・レイアウトと、テンプレートによって前記複数の第1のフィールド・レイアウト上にパターン形成された複数の第2のフィールド・レイアウトは、各フィールド・レイアウトのアクティブ・インプリント・フィールドの間の境界にオープン領域がないように、前記複数の第1のフィールド・レイアウトは互いに碁盤目状をした形状を有し、前記複数の第2のフィールド・レイアウトは互いに碁盤目状をした形状を有し、
前記複数の第1のフィールド・レイアウトの複数のアライメント・マーク上にパターン形成された前記複数の第2のフィールド・レイアウトの複数のダミー・パターンは、前記テンプレートの前記複数の第1のフィールド・レイアウトに対するアライメントには干渉しないことを特徴とするインプリント・リソグラフィ・システム。 - 基板上にパターン形成された複数の第1のフィールド・レイアウトと、テンプレートによって前記複数の第1のフィールド・レイアウト上にパターン形成された複数の第2のフィールド・レイアウトは、各フィールド・レイアウトのアクティブ・インプリント・フィールドの間の境界にあるオープン領域が前記境界の周部全体で同じであるように、前記複数の第1のフィールド・レイアウトは互いに碁盤目状をした形状を有し、前記複数の第2のフィールド・レイアウトは互いに碁盤目状をした形状を有し、
前記複数の第1のフィールド・レイアウトの複数のアライメント・マーク上にパターン形成された前記複数の第2のフィールド・レイアウトの複数のダミー・パターンは、前記テンプレートの前記複数の第1のフィールド・レイアウトに対するアライメントには干渉しないことを特徴とするインプリント・リソグラフィ・システム。 - 前記アクティブ・インプリント・フィールドが、前記テンプレートでアクティブ・フィーチャをインプリントする領域であり、前記境界が、前記アクティブ・インプリント・フィールドのそれぞれの上で前記テンプレートをアライメントするための前記アライメント・マークを含む請求項1又は2に記載のシステム。
- 前記第1のフィールド・レイアウト及び第2のフィールド・レイアウトが、非矩形である形状を有する請求項1、2、又は3に記載のシステム。
- 前記第1のフィールド・レイアウトのレイアウトが、インプリント・リソグラフィ、フォトリソグラフィ、電子ビーム・リソグラフィの群から選択される方法によってパターニングされる請求項3に記載のシステム。
- 前記第2のフィールド・レイアウトのレイアウトが、インプリント・リソグラフィによってパターニングされる請求項3に記載のシステム。
- 前記アライメント・マークが、市松模様でデザインされている請求項3に記載のシステム。
- 前記境界がテスト・パターン領域を含む請求項3に記載のシステム。
- 前記境界がダミー・グレーティングを含む請求項3に記載のシステム。
- 前記境界がアライメント領域を含む請求項3に記載のシステム。
- 前記アライメント領域が周辺凹部である請求項10に記載のシステム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78880706P | 2006-04-03 | 2006-04-03 | |
US60/788,807 | 2006-04-03 | ||
US86248006P | 2006-10-23 | 2006-10-23 | |
US60/862,480 | 2006-10-23 | ||
PCT/US2007/008432 WO2007117523A2 (en) | 2006-04-03 | 2007-04-03 | Imprint lithography system |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009532908A JP2009532908A (ja) | 2009-09-10 |
JP5184508B2 true JP5184508B2 (ja) | 2013-04-17 |
Family
ID=38581609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009504286A Expired - Fee Related JP5184508B2 (ja) | 2006-04-03 | 2007-04-03 | インプリント・リソグラフィ・システム |
Country Status (6)
Country | Link |
---|---|
US (1) | US8850980B2 (ja) |
EP (1) | EP2001646A2 (ja) |
JP (1) | JP5184508B2 (ja) |
KR (1) | KR101357815B1 (ja) |
TW (1) | TW200744829A (ja) |
WO (1) | WO2007117523A2 (ja) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7162035B1 (en) | 2000-05-24 | 2007-01-09 | Tracer Detection Technology Corp. | Authentication method and system |
US7670530B2 (en) | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
JP4987012B2 (ja) | 2005-12-08 | 2012-07-25 | モレキュラー・インプリンツ・インコーポレーテッド | 基板の両面パターニングする方法及びシステム |
TW200907562A (en) * | 2007-05-30 | 2009-02-16 | Molecular Imprints Inc | Template having a silicon nitride, silicon carbide or silicon oxynitride film |
US7906274B2 (en) * | 2007-11-21 | 2011-03-15 | Molecular Imprints, Inc. | Method of creating a template employing a lift-off process |
US20090148619A1 (en) * | 2007-12-05 | 2009-06-11 | Molecular Imprints, Inc. | Controlling Thickness of Residual Layer |
US8012394B2 (en) * | 2007-12-28 | 2011-09-06 | Molecular Imprints, Inc. | Template pattern density doubling |
US8361371B2 (en) * | 2008-02-08 | 2013-01-29 | Molecular Imprints, Inc. | Extrusion reduction in imprint lithography |
US7995196B1 (en) | 2008-04-23 | 2011-08-09 | Tracer Detection Technology Corp. | Authentication method and system |
US20100095862A1 (en) * | 2008-10-22 | 2010-04-22 | Molecular Imprints, Inc. | Double Sidewall Angle Nano-Imprint Template |
JP5404140B2 (ja) * | 2009-04-01 | 2014-01-29 | 株式会社東芝 | テンプレート及び半導体装置の製造方法 |
JP4881413B2 (ja) * | 2009-09-16 | 2012-02-22 | 株式会社東芝 | 識別マーク付きテンプレート及びその製造方法 |
JP5932327B2 (ja) * | 2011-01-26 | 2016-06-08 | キヤノン株式会社 | インプリント装置、検出方法、物品の製造方法及び異物検出装置 |
JP5759195B2 (ja) * | 2011-02-07 | 2015-08-05 | キヤノン株式会社 | 型、インプリント方法及び物品製造方法 |
JP5150926B2 (ja) * | 2011-07-12 | 2013-02-27 | 大日本印刷株式会社 | インプリントモールドの製造方法 |
JP2013222791A (ja) * | 2012-04-16 | 2013-10-28 | Fujifilm Corp | ナノインプリント方法およびナノインプリント用基板並びにそれらを用いたパターン化基板の製造方法 |
JP5851442B2 (ja) * | 2013-03-25 | 2016-02-03 | 株式会社東芝 | モールド及びその製造方法 |
JP6060796B2 (ja) * | 2013-04-22 | 2017-01-18 | 大日本印刷株式会社 | インプリントモールド及びダミーパターン設計方法 |
JP5989610B2 (ja) * | 2013-08-05 | 2016-09-07 | 株式会社東芝 | マスクセット設計方法およびマスクセット設計プログラム |
CN105793777B (zh) * | 2013-12-10 | 2020-02-18 | 佳能纳米技术公司 | 压印光刻术模板和用于零间隙压印的方法 |
JP2015146412A (ja) * | 2014-02-04 | 2015-08-13 | 株式会社東芝 | インプリント用テンプレート及びその製造方法 |
JP6398284B2 (ja) * | 2014-04-21 | 2018-10-03 | 大日本印刷株式会社 | インプリントモールド、インプリントモールド用ブランクス、並びにインプリントモールド用基板の製造方法及びインプリントモールドの製造方法 |
JP6361317B2 (ja) * | 2014-06-25 | 2018-07-25 | 大日本印刷株式会社 | 位置精度推定方法及び位置精度保証方法 |
JP2016225433A (ja) * | 2015-05-29 | 2016-12-28 | キヤノン株式会社 | モールド、インプリント方法、インプリント装置および物品の製造方法 |
WO2016204878A1 (en) * | 2015-06-15 | 2016-12-22 | Zygo Corporation | Displacement measurement of deformable bodies |
US10058890B1 (en) | 2015-11-20 | 2018-08-28 | Seagate Technology Llc | Methods of forming an air bearing surface on a slider and related sliders |
JP6655988B2 (ja) * | 2015-12-25 | 2020-03-04 | キヤノン株式会社 | インプリント装置の調整方法、インプリント方法および物品製造方法 |
CN105974731B (zh) * | 2016-07-25 | 2020-01-03 | 京东方科技集团股份有限公司 | 一种压印板、检测方法及检测装置 |
US11194247B2 (en) * | 2018-01-31 | 2021-12-07 | Canon Kabushiki Kaisha | Extrusion control by capillary force reduction |
US10553501B2 (en) * | 2018-03-28 | 2020-02-04 | Canon Kabushiki Kaisha | Apparatus for use in forming an adaptive layer and a method of using the same |
JP6593504B2 (ja) * | 2018-09-05 | 2019-10-23 | 大日本印刷株式会社 | インプリントモールド、インプリントモールド用ブランクス、並びにインプリントモールド用基板の製造方法及びインプリントモールドの製造方法 |
JP2022142518A (ja) * | 2021-03-16 | 2022-09-30 | キオクシア株式会社 | テンプレート、マーク、及びテンプレートの製造方法 |
Family Cites Families (250)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4022855A (en) | 1975-03-17 | 1977-05-10 | Eastman Kodak Company | Method for making a plastic optical element having a gradient index of refraction |
FR2325018A1 (fr) | 1975-06-23 | 1977-04-15 | Ibm | Dispositif de mesure d'intervalle pour definir la distance entre deux faces ou plus |
US4208240A (en) | 1979-01-26 | 1980-06-17 | Gould Inc. | Method and apparatus for controlling plasma etching |
DE3022709A1 (de) | 1980-06-18 | 1982-01-07 | Felix Schoeller jr. GmbH & Co KG, 4500 Osnabrück | Wasserfestes fotografisches papier und verfahren zu seiner herstellung |
US4576900A (en) | 1981-10-09 | 1986-03-18 | Amdahl Corporation | Integrated circuit multilevel interconnect system and method |
JPS5884808A (ja) | 1981-11-13 | 1983-05-21 | Nippon Synthetic Chem Ind Co Ltd:The | 樹脂状物質の製造法 |
US4440804A (en) | 1982-08-02 | 1984-04-03 | Fairchild Camera & Instrument Corporation | Lift-off process for fabricating self-aligned contacts |
US4490409A (en) | 1982-09-07 | 1984-12-25 | Energy Sciences, Inc. | Process and apparatus for decorating the surfaces of electron irradiation cured coatings on radiation-sensitive substrates |
US4637904A (en) | 1983-11-14 | 1987-01-20 | Rohm And Haas Company | Process for molding a polymeric layer onto a substrate |
US4512848A (en) | 1984-02-06 | 1985-04-23 | Exxon Research And Engineering Co. | Procedure for fabrication of microstructures over large areas using physical replication |
JPS6129103A (ja) | 1984-07-19 | 1986-02-10 | Nippon Steel Corp | 非晶質合金薄帯の磁性改善方法 |
US4908298A (en) | 1985-03-19 | 1990-03-13 | International Business Machines Corporation | Method of creating patterned multilayer films for use in production of semiconductor circuits and systems |
EP0245461A1 (en) | 1985-11-18 | 1987-11-19 | EASTMAN KODAK COMPANY (a New Jersey corporation) | Process for making optical recording media |
EP0228671A1 (en) | 1985-12-23 | 1987-07-15 | General Electric Company | Method for the production of a coated substrate with controlled surface characteristics |
DE3767317D1 (de) | 1986-02-13 | 1991-02-21 | Philips Nv | Matrize fuer einen abdruck-process. |
US4676868A (en) | 1986-04-23 | 1987-06-30 | Fairchild Semiconductor Corporation | Method for planarizing semiconductor substrates |
US4737425A (en) | 1986-06-10 | 1988-04-12 | International Business Machines Corporation | Patterned resist and process |
KR900004269B1 (ko) | 1986-06-11 | 1990-06-18 | 가부시기가이샤 도시바 | 제 1물체와 제 2 물체와의 위치 맞추는 방법 및 장치 |
JPS6376330A (ja) | 1986-09-18 | 1988-04-06 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
FR2604553A1 (fr) | 1986-09-29 | 1988-04-01 | Rhone Poulenc Chimie | Substrat polymere rigide pour disque optique et les disques optiques obtenus a partir dudit substrat |
US4707218A (en) | 1986-10-28 | 1987-11-17 | International Business Machines Corporation | Lithographic image size reduction |
JP2823016B2 (ja) | 1986-12-25 | 1998-11-11 | ソニー株式会社 | 透過型スクリーンの製造方法 |
US5736424A (en) | 1987-02-27 | 1998-04-07 | Lucent Technologies Inc. | Device fabrication involving planarization |
US6048799A (en) | 1987-02-27 | 2000-04-11 | Lucent Technologies Inc. | Device fabrication involving surface planarization |
US6391798B1 (en) | 1987-02-27 | 2002-05-21 | Agere Systems Guardian Corp. | Process for planarization a semiconductor substrate |
US4731155A (en) | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
US5028361A (en) | 1987-11-09 | 1991-07-02 | Takeo Fujimoto | Method for molding a photosensitive composition |
US5028366A (en) | 1988-01-12 | 1991-07-02 | Air Products And Chemicals, Inc. | Water based mold release compositions for making molded polyurethane foam |
JPH01196749A (ja) | 1988-01-30 | 1989-08-08 | Hoya Corp | 光情報記録媒体用基板の製造方法 |
US4862019A (en) | 1988-04-20 | 1989-08-29 | Texas Instruments Incorporated | Single-level poly programmable bit circuit |
US4866307A (en) | 1988-04-20 | 1989-09-12 | Texas Instruments Incorporated | Integrated programmable bit circuit using single-level poly construction |
JPH0269936A (ja) | 1988-07-28 | 1990-03-08 | Siemens Ag | 半導体材料上の樹脂構造の形成方法 |
US4921778A (en) | 1988-07-29 | 1990-05-01 | Shipley Company Inc. | Photoresist pattern fabrication employing chemically amplified metalized material |
JP2546350B2 (ja) | 1988-09-09 | 1996-10-23 | キヤノン株式会社 | 位置合わせ装置 |
US4964945A (en) | 1988-12-09 | 1990-10-23 | Minnesota Mining And Manufacturing Company | Lift off patterning process on a flexible substrate |
JPH0292603U (ja) | 1989-01-09 | 1990-07-23 | ||
JPH02192045A (ja) | 1989-01-20 | 1990-07-27 | Fujitsu Ltd | 光ディスク基板の製造方法 |
US5110514A (en) | 1989-05-01 | 1992-05-05 | Soane Technologies, Inc. | Controlled casting of a shrinkable material |
US5053318A (en) | 1989-05-18 | 1991-10-01 | Shipley Company Inc. | Plasma processing with metal mask integration |
CA2011927C (en) | 1989-06-02 | 1996-12-24 | Alan Lee Sidman | Microlithographic method for producing thick, vertically-walled photoresist patterns |
US4919748A (en) | 1989-06-30 | 1990-04-24 | At&T Bell Laboratories | Method for tapered etching |
US5151754A (en) | 1989-10-06 | 1992-09-29 | Kabushiki Kaisha Toshiba | Method and an apparatus for measuring a displacement between two objects and a method and an apparatus for measuring a gap distance between two objects |
US5362606A (en) | 1989-10-18 | 1994-11-08 | Massachusetts Institute Of Technology | Positive resist pattern formation through focused ion beam exposure and surface barrier silylation |
US5073230A (en) | 1990-04-17 | 1991-12-17 | Arizona Board Of Regents Acting On Behalf Of Arizona State University | Means and methods of lifting and relocating an epitaxial device layer |
US5003062A (en) | 1990-04-19 | 1991-03-26 | Taiwan Semiconductor Manufacturing Co. | Semiconductor planarization process for submicron devices |
US5328810A (en) | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
DE4029912A1 (de) | 1990-09-21 | 1992-03-26 | Philips Patentverwaltung | Verfahren zur bildung mindestens eines grabens in einer substratschicht |
US5126006A (en) | 1990-10-30 | 1992-06-30 | International Business Machines Corp. | Plural level chip masking |
US5288436A (en) | 1990-11-06 | 1994-02-22 | Colloptics, Inc. | Methods of fabricating a collagen lenticule precursor for modifying the cornea |
US5362940A (en) | 1990-11-09 | 1994-11-08 | Litel Instruments | Use of Fresnel zone plates for material processing |
US5240878A (en) | 1991-04-26 | 1993-08-31 | International Business Machines Corporation | Method for forming patterned films on a substrate |
US5212147A (en) | 1991-05-15 | 1993-05-18 | Hewlett-Packard Company | Method of forming a patterned in-situ high Tc superconductive film |
EP0524759A1 (en) | 1991-07-23 | 1993-01-27 | AT&T Corp. | Device fabrication process |
JPH0580530A (ja) | 1991-09-24 | 1993-04-02 | Hitachi Ltd | 薄膜パターン製造方法 |
US5263073A (en) | 1991-12-20 | 1993-11-16 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Scanning systems for high resolution E-beam and X-ray lithography |
US5244818A (en) | 1992-04-08 | 1993-09-14 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits |
US5545367A (en) | 1992-04-15 | 1996-08-13 | Soane Technologies, Inc. | Rapid prototype three dimensional stereolithography |
US5246880A (en) | 1992-04-27 | 1993-09-21 | Eastman Kodak Company | Method for creating substrate electrodes for flip chip and other applications |
JP3157605B2 (ja) | 1992-04-28 | 2001-04-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US5407763A (en) * | 1992-05-28 | 1995-04-18 | Ceridian Corporation | Mask alignment mark system |
US5371822A (en) | 1992-06-09 | 1994-12-06 | Digital Equipment Corporation | Method of packaging and assembling opto-electronic integrated circuits |
US5232874A (en) | 1992-06-22 | 1993-08-03 | Micron Technology, Inc. | Method for producing a semiconductor wafer having shallow and deep buried contacts |
US5376810A (en) | 1992-06-26 | 1994-12-27 | California Institute Of Technology | Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response |
US5601641A (en) | 1992-07-21 | 1997-02-11 | Tse Industries, Inc. | Mold release composition with polybutadiene and method of coating a mold core |
US5250472A (en) | 1992-09-03 | 1993-10-05 | Industrial Technology Research Institute | Spin-on-glass integration planarization having siloxane partial etchback and silicate processes |
US5431777A (en) | 1992-09-17 | 1995-07-11 | International Business Machines Corporation | Methods and compositions for the selective etching of silicon |
TW227628B (ja) | 1992-12-10 | 1994-08-01 | Samsung Electronics Co Ltd | |
DE69405451T2 (de) | 1993-03-16 | 1998-03-12 | Koninkl Philips Electronics Nv | Verfahren und Vorrichtung zur Herstellung eines strukturierten Reliefbildes aus vernetztem Photoresist auf einer flachen Substratoberfläche |
US5324683A (en) | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
JP2837063B2 (ja) | 1993-06-04 | 1998-12-14 | シャープ株式会社 | レジストパターンの形成方法 |
KR950004486A (ko) * | 1993-07-15 | 1995-02-18 | 김주용 | 웨이퍼의 필드 영역 분할 방법 |
US6776094B1 (en) | 1993-10-04 | 2004-08-17 | President & Fellows Of Harvard College | Kit For Microcontact Printing |
US5900160A (en) | 1993-10-04 | 1999-05-04 | President And Fellows Of Harvard College | Methods of etching articles via microcontact printing |
US5776748A (en) | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
US6180239B1 (en) | 1993-10-04 | 2001-01-30 | President And Fellows Of Harvard College | Microcontact printing on surfaces and derivative articles |
US5512131A (en) | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
NL9401260A (nl) | 1993-11-12 | 1995-06-01 | Cornelis Johannes Maria Van Ri | Membraan voor microfiltratie, ultrafiltratie, gasscheiding en katalyse, werkwijze ter vervaardiging van een dergelijk membraan, mal ter vervaardiging van een dergelijk membraan, alsmede diverse scheidingssystemen omvattende een dergelijk membraan. |
US5434107A (en) | 1994-01-28 | 1995-07-18 | Texas Instruments Incorporated | Method for planarization |
US5453157A (en) | 1994-05-16 | 1995-09-26 | Texas Instruments Incorporated | Low temperature anisotropic ashing of resist for semiconductor fabrication |
JPH07335529A (ja) * | 1994-06-09 | 1995-12-22 | Nikon Corp | 投影露光装置 |
US5686356A (en) | 1994-09-30 | 1997-11-11 | Texas Instruments Incorporated | Conductor reticulation for improved device planarity |
EP0715334B1 (en) | 1994-11-30 | 1999-04-14 | Applied Materials, Inc. | Plasma reactors for processing semiconductor wafers |
US5458520A (en) | 1994-12-13 | 1995-10-17 | International Business Machines Corporation | Method for producing planar field emission structure |
US5628917A (en) | 1995-02-03 | 1997-05-13 | Cornell Research Foundation, Inc. | Masking process for fabricating ultra-high aspect ratio, wafer-free micro-opto-electromechanical structures |
US5849209A (en) | 1995-03-31 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Mold material made with additives |
US6342389B1 (en) | 1995-04-10 | 2002-01-29 | Roger S. Cubicciotti | Modified phycobilisomes and uses therefore |
GB9509487D0 (en) | 1995-05-10 | 1995-07-05 | Ici Plc | Micro relief element & preparation thereof |
US5820769A (en) | 1995-05-24 | 1998-10-13 | Regents Of The University Of Minnesota | Method for making magnetic storage having discrete elements with quantized magnetic moments |
US5948570A (en) | 1995-05-26 | 1999-09-07 | Lucent Technologies Inc. | Process for dry lithographic etching |
US5808742A (en) * | 1995-05-31 | 1998-09-15 | Massachusetts Institute Of Technology | Optical alignment apparatus having multiple parallel alignment marks |
US5654238A (en) | 1995-08-03 | 1997-08-05 | International Business Machines Corporation | Method for etching vertical contact holes without substrate damage caused by directional etching |
US5849222A (en) | 1995-09-29 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Method for reducing lens hole defects in production of contact lens blanks |
US20040137734A1 (en) | 1995-11-15 | 2004-07-15 | Princeton University | Compositions and processes for nanoimprinting |
US20040036201A1 (en) | 2000-07-18 | 2004-02-26 | Princeton University | Methods and apparatus of field-induced pressure imprint lithography |
US6309580B1 (en) | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US5772905A (en) | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US6482742B1 (en) | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US7758794B2 (en) | 2001-10-29 | 2010-07-20 | Princeton University | Method of making an article comprising nanoscale patterns with reduced edge roughness |
US20030080471A1 (en) | 2001-10-29 | 2003-05-01 | Chou Stephen Y. | Lithographic method for molding pattern with nanoscale features |
US6518189B1 (en) | 1995-11-15 | 2003-02-11 | Regents Of The University Of Minnesota | Method and apparatus for high density nanostructures |
US5669303A (en) | 1996-03-04 | 1997-09-23 | Motorola | Apparatus and method for stamping a surface |
US6355198B1 (en) | 1996-03-15 | 2002-03-12 | President And Fellows Of Harvard College | Method of forming articles including waveguides via capillary micromolding and microtransfer molding |
US20030179354A1 (en) | 1996-03-22 | 2003-09-25 | Nikon Corporation | Mask-holding apparatus for a light exposure apparatus and related scanning-exposure method |
JPH09283621A (ja) | 1996-04-10 | 1997-10-31 | Murata Mfg Co Ltd | 半導体装置のt型ゲート電極形成方法およびその構造 |
US5942443A (en) | 1996-06-28 | 1999-08-24 | Caliper Technologies Corporation | High throughput screening assay systems in microscale fluidic devices |
US5888650A (en) | 1996-06-03 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Temperature-responsive adhesive article |
US5779799A (en) | 1996-06-21 | 1998-07-14 | Micron Technology, Inc. | Substrate coating apparatus |
KR980005307A (ko) * | 1996-06-21 | 1998-03-30 | 김주용 | 반도체 소자의 패턴 정렬방법 |
US6074827A (en) | 1996-07-30 | 2000-06-13 | Aclara Biosciences, Inc. | Microfluidic method for nucleic acid purification and processing |
CA2264908C (en) | 1996-09-06 | 2006-04-25 | Obducat Ab | Method for anisotropic etching of structures in conducting materials |
US6228539B1 (en) * | 1996-09-18 | 2001-05-08 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
US5858580A (en) | 1997-09-17 | 1999-01-12 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
JPH10123534A (ja) | 1996-10-23 | 1998-05-15 | Toshiba Corp | 液晶表示素子 |
US5895263A (en) | 1996-12-19 | 1999-04-20 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
US5983906A (en) | 1997-01-24 | 1999-11-16 | Applied Materials, Inc. | Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment |
US5817579A (en) | 1997-04-09 | 1998-10-06 | Vanguard International Semiconductor Corporation | Two step plasma etch method for forming self aligned contact |
US5948470A (en) | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
US5812629A (en) | 1997-04-30 | 1998-09-22 | Clauser; John F. | Ultrahigh resolution interferometric x-ray imaging |
US5926690A (en) | 1997-05-28 | 1999-07-20 | Advanced Micro Devices, Inc. | Run-to-run control process for controlling critical dimensions |
AU3818997A (en) | 1997-07-25 | 1999-02-16 | Regents Of The University Of Minnesota | Single-electron floating-gate mos memory |
US5974150A (en) | 1997-09-30 | 1999-10-26 | Tracer Detection Technology Corp. | System and method for authentication of goods |
US6150680A (en) | 1998-03-05 | 2000-11-21 | Welch Allyn, Inc. | Field effect semiconductor device having dipole barrier |
JP4498601B2 (ja) | 1998-03-05 | 2010-07-07 | オブデュキャット、アクチボラグ | エッチング方法 |
SE511682C2 (sv) | 1998-03-05 | 1999-11-08 | Etchtech Sweden Ab | Motstånd i elektriska ledare på eller i mönsterkort, substrat och halvledarbrickor |
US6274393B1 (en) * | 1998-04-20 | 2001-08-14 | International Business Machines Corporation | Method for measuring submicron images |
JP3780700B2 (ja) | 1998-05-26 | 2006-05-31 | セイコーエプソン株式会社 | パターン形成方法、パターン形成装置、パターン形成用版、パターン形成用版の製造方法、カラーフィルタの製造方法、導電膜の製造方法及び液晶パネルの製造方法 |
US6150231A (en) * | 1998-06-15 | 2000-11-21 | Siemens Aktiengesellschaft | Overlay measurement technique using moire patterns |
FI109944B (fi) | 1998-08-11 | 2002-10-31 | Valtion Teknillinen | Optoelektroninen komponentti ja valmistusmenetelmä |
US5907782A (en) | 1998-08-15 | 1999-05-25 | Acer Semiconductor Manufacturing Inc. | Method of forming a multiple fin-pillar capacitor for a high density dram cell |
AU1444800A (en) | 1998-10-09 | 2000-05-01 | Trustees Of Princeton University, The | Microscale patterning and articles formed thereby |
US6713238B1 (en) | 1998-10-09 | 2004-03-30 | Stephen Y. Chou | Microscale patterning and articles formed thereby |
US6218316B1 (en) | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6665014B1 (en) | 1998-11-25 | 2003-12-16 | Intel Corporation | Microlens and photodetector |
US6247986B1 (en) | 1998-12-23 | 2001-06-19 | 3M Innovative Properties Company | Method for precise molding and alignment of structures on a substrate using a stretchable mold |
US6521536B1 (en) | 1999-01-11 | 2003-02-18 | Micron Technology, Inc. | Planarization process |
DE19903196A1 (de) * | 1999-01-27 | 2000-08-10 | Siemens Ag | Verfahren zur Verbesserung der Erkennbarkeit von Alignmentmarken |
US6274294B1 (en) | 1999-02-03 | 2001-08-14 | Electroformed Stents, Inc. | Cylindrical photolithography exposure process and apparatus |
US6741338B2 (en) | 1999-02-10 | 2004-05-25 | Litel Instruments | In-situ source metrology instrument and method of use |
US6565928B2 (en) | 1999-03-08 | 2003-05-20 | Tokyo Electron Limited | Film forming method and film forming apparatus |
US6334960B1 (en) | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
JP3946899B2 (ja) * | 1999-03-26 | 2007-07-18 | 株式会社東芝 | エネルギービーム装置における光学系の調整方法 |
TW419720B (en) * | 1999-03-26 | 2001-01-21 | Mosel Vitelic Inc | The method of monitoring the overlay accuracy of the stepper and the device using the same |
US6387783B1 (en) | 1999-04-26 | 2002-05-14 | International Business Machines Corporation | Methods of T-gate fabrication using a hybrid resist |
US6255022B1 (en) | 1999-06-17 | 2001-07-03 | Taiwan Semiconductor Manufacturing Company | Dry development process for a bi-layer resist system utilized to reduce microloading |
JP2001143982A (ja) | 1999-06-29 | 2001-05-25 | Applied Materials Inc | 半導体デバイス製造のための統合臨界寸法制御 |
US6242363B1 (en) | 1999-08-11 | 2001-06-05 | Adc Telecommunications, Inc. | Method of etching a wafer layer using a sacrificial wall to form vertical sidewall |
US6207570B1 (en) * | 1999-08-20 | 2001-03-27 | Lucent Technologies, Inc. | Method of manufacturing integrated circuit devices |
US6383928B1 (en) | 1999-09-02 | 2002-05-07 | Texas Instruments Incorporated | Post copper CMP clean |
US6517995B1 (en) | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6329256B1 (en) | 1999-09-24 | 2001-12-11 | Advanced Micro Devices, Inc. | Self-aligned damascene gate formation with low gate resistance |
US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
ATE294648T1 (de) | 1999-12-23 | 2005-05-15 | Univ Massachusetts | Verfahren zur herstellung von submikron mustern auf filmen |
US6498640B1 (en) | 1999-12-30 | 2002-12-24 | Koninklijke Philips Electronics N.V. | Method to measure alignment using latent image grating structures |
US6376379B1 (en) | 2000-02-01 | 2002-04-23 | Chartered Semiconductor Manufacturing Ltd. | Method of hard mask patterning |
SE515785C2 (sv) | 2000-02-23 | 2001-10-08 | Obducat Ab | Anordning för homogen värmning av ett objekt och användning av anordningen |
SE515962C2 (sv) | 2000-03-15 | 2001-11-05 | Obducat Ab | Anordning för överföring av mönster till objekt |
SE0001369L (sv) | 2000-04-13 | 2001-10-14 | Obducat Ab | Förfarande vid samt apparat för bearbetning av substrat |
SE516194C2 (sv) | 2000-04-18 | 2001-12-03 | Obducat Ab | Substrat för samt process vid tillverkning av strukturer |
US7859519B2 (en) | 2000-05-01 | 2010-12-28 | Tulbert David J | Human-machine interface |
JP2001332556A (ja) * | 2000-05-25 | 2001-11-30 | Hitachi Ltd | 半導体装置の製造方法 |
US6593240B1 (en) | 2000-06-28 | 2003-07-15 | Infineon Technologies, North America Corp | Two step chemical mechanical polishing process |
EP1303792B1 (en) | 2000-07-16 | 2012-10-03 | Board Of Regents, The University Of Texas System | High-resolution overlay alignement methods and systems for imprint lithography |
US7635262B2 (en) | 2000-07-18 | 2009-12-22 | Princeton University | Lithographic apparatus for fluid pressure imprint lithography |
US7211214B2 (en) | 2000-07-18 | 2007-05-01 | Princeton University | Laser assisted direct imprint lithography |
US20050037143A1 (en) | 2000-07-18 | 2005-02-17 | Chou Stephen Y. | Imprint lithography with improved monitoring and control and apparatus therefor |
JP2004505273A (ja) * | 2000-08-01 | 2004-02-19 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | 転写リソグラフィのための透明テンプレートと基板の間のギャップおよび配向を高精度でセンシングするための方法 |
US6326627B1 (en) | 2000-08-02 | 2001-12-04 | Archimedes Technology Group, Inc. | Mass filtering sputtered ion source |
KR100350811B1 (ko) | 2000-08-19 | 2002-09-05 | 삼성전자 주식회사 | 반도체 장치의 금속 비아 콘택 및 그 형성방법 |
WO2002017383A2 (en) | 2000-08-21 | 2002-02-28 | Board Of Regents, The University Of Texas System | Flexure based translation stage |
AU2001290415A1 (en) | 2000-09-18 | 2002-03-26 | Obducat Aktiebolag | Method of etching, as well as frame element, mask and prefabricated substrate element for use in such etching |
AU2001290424A1 (en) | 2000-09-20 | 2002-04-02 | Obducat Aktiebolag | A method for wet etching |
US6629292B1 (en) | 2000-10-06 | 2003-09-30 | International Business Machines Corporation | Method for forming graphical images in semiconductor devices |
EP1352295B1 (en) | 2000-10-12 | 2015-12-23 | Board of Regents, The University of Texas System | Template for room temperature, low pressure micro- and nano-imprint lithography |
US6284653B1 (en) * | 2000-10-30 | 2001-09-04 | Vanguard International Semiconductor Corp. | Method of selectively forming a barrier layer from a directionally deposited metal layer |
FR2817042B1 (fr) * | 2000-11-22 | 2003-06-20 | Saint Gobain | Procede et dispositif d'analyse de la surface d'un substrat |
TW525221B (en) | 2000-12-04 | 2003-03-21 | Ebara Corp | Substrate processing method |
JP2002184952A (ja) * | 2000-12-15 | 2002-06-28 | Shindengen Electric Mfg Co Ltd | 半導体装置、半導体装置の製造方法 |
US6632742B2 (en) | 2001-04-18 | 2003-10-14 | Promos Technologies Inc. | Method for avoiding defects produced in the CMP process |
US6620733B2 (en) | 2001-02-12 | 2003-09-16 | Lam Research Corporation | Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics |
US6841483B2 (en) | 2001-02-12 | 2005-01-11 | Lam Research Corporation | Unique process chemistry for etching organic low-k materials |
US6387787B1 (en) | 2001-03-02 | 2002-05-14 | Motorola, Inc. | Lithographic template and method of formation and use |
US6955767B2 (en) | 2001-03-22 | 2005-10-18 | Hewlett-Packard Development Company, Lp. | Scanning probe based lithographic alignment |
US6517977B2 (en) | 2001-03-28 | 2003-02-11 | Motorola, Inc. | Lithographic template and method of formation and use |
US6534418B1 (en) | 2001-04-30 | 2003-03-18 | Advanced Micro Devices, Inc. | Use of silicon containing imaging layer to define sub-resolution gate structures |
US6541360B1 (en) | 2001-04-30 | 2003-04-01 | Advanced Micro Devices, Inc. | Bi-layer trim etch process to form integrated circuit gate structures |
US6964793B2 (en) | 2002-05-16 | 2005-11-15 | Board Of Regents, The University Of Texas System | Method for fabricating nanoscale patterns in light curable compositions using an electric field |
JP2002348680A (ja) | 2001-05-22 | 2002-12-04 | Sharp Corp | 金属膜パターンおよびその製造方法 |
US6847433B2 (en) | 2001-06-01 | 2005-01-25 | Agere Systems, Inc. | Holder, system, and process for improving overlay in lithography |
TW488080B (en) | 2001-06-08 | 2002-05-21 | Au Optronics Corp | Method for producing thin film transistor |
US7049049B2 (en) | 2001-06-27 | 2006-05-23 | University Of South Florida | Maskless photolithography for using photoreactive agents |
CA2454570C (en) | 2001-07-25 | 2016-12-20 | The Trustees Of Princeton University | Nanochannel arrays and their preparation and use for high throughput macromolecular analysis |
US6678038B2 (en) | 2001-08-03 | 2004-01-13 | Nikon Corporation | Apparatus and methods for detecting tool-induced shift in microlithography apparatus |
WO2003035932A1 (en) | 2001-09-25 | 2003-05-01 | Minuta Technology Co., Ltd. | Method for forming a micro-pattern on a substrate by using capillary force |
US6716767B2 (en) | 2001-10-31 | 2004-04-06 | Brewer Science, Inc. | Contact planarization materials that generate no volatile byproducts or residue during curing |
US6621960B2 (en) | 2002-01-24 | 2003-09-16 | Oplink Communications, Inc. | Method of fabricating multiple superimposed fiber Bragg gratings |
TW529097B (en) * | 2002-01-28 | 2003-04-21 | Amic Technology Taiwan Inc | Scribe lines for increasing wafer utilizable area |
US6716754B2 (en) | 2002-03-12 | 2004-04-06 | Micron Technology, Inc. | Methods of forming patterns and molds for semiconductor constructions |
US7117583B2 (en) | 2002-03-18 | 2006-10-10 | International Business Machines Corporation | Method and apparatus using a pre-patterned seed layer for providing an aligned coil for an inductive head structure |
US6783717B2 (en) | 2002-04-22 | 2004-08-31 | International Business Machines Corporation | Process of fabricating a precision microcontact printing stamp |
US6710414B2 (en) * | 2002-05-10 | 2004-03-23 | General Semiconductor, Inc. | Surface geometry for a MOS-gated device that allows the manufacture of dice having different sizes |
US6849558B2 (en) | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
US20030224116A1 (en) | 2002-05-30 | 2003-12-04 | Erli Chen | Non-conformal overcoat for nonometer-sized surface structure |
US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US6900881B2 (en) | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US6908861B2 (en) | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
US7077992B2 (en) * | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
MY164487A (en) | 2002-07-11 | 2017-12-29 | Molecular Imprints Inc | Step and repeat imprint lithography processes |
US6713853B1 (en) * | 2002-07-23 | 2004-03-30 | Applied Micro Circuits Corporation | Electronic package with offset reference plane cutout |
WO2004013693A2 (en) * | 2002-08-01 | 2004-02-12 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US6916584B2 (en) | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US7070405B2 (en) | 2002-08-01 | 2006-07-04 | Molecular Imprints, Inc. | Alignment systems for imprint lithography |
US7071088B2 (en) | 2002-08-23 | 2006-07-04 | Molecular Imprints, Inc. | Method for fabricating bulbous-shaped vias |
US6936194B2 (en) * | 2002-09-05 | 2005-08-30 | Molecular Imprints, Inc. | Functional patterning material for imprint lithography processes |
US6833325B2 (en) | 2002-10-11 | 2004-12-21 | Lam Research Corporation | Method for plasma etching performance enhancement |
US6980282B2 (en) * | 2002-12-11 | 2005-12-27 | Molecular Imprints, Inc. | Method for modulating shapes of substrates |
US7750059B2 (en) | 2002-12-04 | 2010-07-06 | Hewlett-Packard Development Company, L.P. | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
US7323130B2 (en) | 2002-12-13 | 2008-01-29 | Molecular Imprints, Inc. | Magnification correction employing out-of-plane distortion of a substrate |
US7113336B2 (en) | 2002-12-30 | 2006-09-26 | Ian Crosby | Microlens including wire-grid polarizer and methods of manufacture |
US6943117B2 (en) | 2003-03-27 | 2005-09-13 | Korea Institute Of Machinery & Materials | UV nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization |
US7087452B2 (en) * | 2003-04-22 | 2006-08-08 | Intel Corporation | Edge arrangements for integrated circuit chips |
US6805054B1 (en) | 2003-05-14 | 2004-10-19 | Molecular Imprints, Inc. | Method, system and holder for transferring templates during imprint lithography processes |
US6951173B1 (en) | 2003-05-14 | 2005-10-04 | Molecular Imprints, Inc. | Assembly and method for transferring imprint lithography templates |
US6964916B2 (en) * | 2003-06-06 | 2005-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor fabrication method and structure |
US6956253B2 (en) * | 2003-06-06 | 2005-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Color filter with resist material in scribe lines |
US7507598B2 (en) * | 2003-06-06 | 2009-03-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor fabrication method and structure |
TWI228638B (en) | 2003-06-10 | 2005-03-01 | Ind Tech Res Inst | Method for and apparatus for bonding patterned imprint to a substrate by adhering means |
US7790231B2 (en) | 2003-07-10 | 2010-09-07 | Brewer Science Inc. | Automated process and apparatus for planarization of topographical surfaces |
US7136150B2 (en) * | 2003-09-25 | 2006-11-14 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
US20050084804A1 (en) * | 2003-10-16 | 2005-04-21 | Molecular Imprints, Inc. | Low surface energy templates |
US20050098534A1 (en) * | 2003-11-12 | 2005-05-12 | Molecular Imprints, Inc. | Formation of conductive templates employing indium tin oxide |
JP4322096B2 (ja) | 2003-11-14 | 2009-08-26 | Tdk株式会社 | レジストパターン形成方法並びに磁気記録媒体及び磁気ヘッドの製造方法 |
TWI222680B (en) * | 2003-11-20 | 2004-10-21 | United Microelectronics Corp | Scribe line structure of wafer |
TWI277815B (en) * | 2004-01-16 | 2007-04-01 | Hannstar Display Corp | Liquid crystal display and manufacturing method of liquid crystal display including substrate |
US7140861B2 (en) * | 2004-04-27 | 2006-11-28 | Molecular Imprints, Inc. | Compliant hard template for UV imprinting |
US20060022195A1 (en) * | 2004-08-01 | 2006-02-02 | Kun-Chih Wang | Scribe line structure |
US7309225B2 (en) * | 2004-08-13 | 2007-12-18 | Molecular Imprints, Inc. | Moat system for an imprint lithography template |
US20060067650A1 (en) * | 2004-09-27 | 2006-03-30 | Clarence Chui | Method of making a reflective display device using thin film transistor production techniques |
US7244386B2 (en) | 2004-09-27 | 2007-07-17 | Molecular Imprints, Inc. | Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom |
US7292326B2 (en) * | 2004-11-30 | 2007-11-06 | Molecular Imprints, Inc. | Interferometric analysis for the manufacture of nano-scale devices |
US7357876B2 (en) | 2004-12-01 | 2008-04-15 | Molecular Imprints, Inc. | Eliminating printability of sub-resolution defects in imprint lithography |
US7762186B2 (en) * | 2005-04-19 | 2010-07-27 | Asml Netherlands B.V. | Imprint lithography |
US20060266916A1 (en) * | 2005-05-25 | 2006-11-30 | Molecular Imprints, Inc. | Imprint lithography template having a coating to reflect and/or absorb actinic energy |
JP2007058172A (ja) * | 2005-07-28 | 2007-03-08 | Mitsubishi Electric Corp | 遮光膜付き基板、カラーフィルタ基板及びこれらの製造方法、並びに遮光膜付き基板を備えた表示装置。 |
US8011916B2 (en) * | 2005-09-06 | 2011-09-06 | Canon Kabushiki Kaisha | Mold, imprint apparatus, and process for producing structure |
US7803308B2 (en) | 2005-12-01 | 2010-09-28 | Molecular Imprints, Inc. | Technique for separating a mold from solidified imprinting material |
JP5213335B2 (ja) | 2006-02-01 | 2013-06-19 | キヤノン株式会社 | インプリント用モールド、該モールドによる構造体の製造方法 |
US7690910B2 (en) * | 2006-02-01 | 2010-04-06 | Canon Kabushiki Kaisha | Mold for imprint, process for producing minute structure using the mold, and process for producing the mold |
US7360851B1 (en) * | 2006-02-15 | 2008-04-22 | Kla-Tencor Technologies Corporation | Automated pattern recognition of imprint technology |
TW200815912A (en) | 2006-04-03 | 2008-04-01 | Molecular Imprints Inc | Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques |
TW200801794A (en) * | 2006-04-03 | 2008-01-01 | Molecular Imprints Inc | Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks |
-
2007
- 2007-03-30 US US11/694,612 patent/US8850980B2/en not_active Expired - Fee Related
- 2007-04-03 KR KR1020087016346A patent/KR101357815B1/ko active IP Right Grant
- 2007-04-03 JP JP2009504286A patent/JP5184508B2/ja not_active Expired - Fee Related
- 2007-04-03 EP EP07754877A patent/EP2001646A2/en not_active Withdrawn
- 2007-04-03 TW TW096111823A patent/TW200744829A/zh unknown
- 2007-04-03 WO PCT/US2007/008432 patent/WO2007117523A2/en active Application Filing
Also Published As
Publication number | Publication date |
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KR101357815B1 (ko) | 2014-02-04 |
TW200744829A (en) | 2007-12-16 |
US20070247608A1 (en) | 2007-10-25 |
US8850980B2 (en) | 2014-10-07 |
WO2007117523A3 (en) | 2008-04-10 |
KR20080114678A (ko) | 2008-12-31 |
EP2001646A2 (en) | 2008-12-17 |
WO2007117523A2 (en) | 2007-10-18 |
JP2009532908A (ja) | 2009-09-10 |
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