JP4922358B2 - デバイス製造方法 - Google Patents
デバイス製造方法 Download PDFInfo
- Publication number
- JP4922358B2 JP4922358B2 JP2009168334A JP2009168334A JP4922358B2 JP 4922358 B2 JP4922358 B2 JP 4922358B2 JP 2009168334 A JP2009168334 A JP 2009168334A JP 2009168334 A JP2009168334 A JP 2009168334A JP 4922358 B2 JP4922358 B2 JP 4922358B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- substrate
- mask
- resist
- features
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
1.ステップモードにおいては、マスクテーブルMT及び基板テーブルWTは、基本的に静止状態に維持される一方、放射ビームに与えたパターン全体が1回でターゲット部分Cに投影される(すなわち1回の静止露光)。次に、別のターゲット部分Cを露光できるように、基板テーブルWTがX方向及び/又はY方向に移動される。ステップモードでは、露光フィールドの最大サイズによって、1回の静止露光で像が形成されるターゲット部分Cのサイズが制限される。
2.スキャンモードにおいては、マスクテーブルMT及び基板テーブルWTは同期的にスキャンされる一方、放射ビームに与えられたパターンをターゲット部分Cに投影する(つまり1回の動的露光)。マスクテーブルMTに対する基板テーブルWTの速度及び方向は、投影システムPSの拡大(縮小)及び像反転特性によって求めることができる。スキャンモードでは、露光フィールドの最大サイズによって、1回の動的露光におけるターゲット部分Cの(非スキャン方向における)幅が制限され、スキャン動作の長さによってターゲット部分Cの(スキャン方向における)高さが決まる。
3.別のモードでは、マスクテーブルMTはプログラマブルパターニングデバイスを保持して基本的に静止状態に維持され、基板テーブルWTを移動又はスキャンさせながら、放射ビームに与えられたパターンをターゲット部分Cに投影する。このモードでは、一般にパルス状放射源を使用して、基板テーブルWTを移動させる毎に、又はスキャン中に連続する放射パルスの間で、プログラマブルパターニングデバイスを必要に応じて更新する。この動作モードは、以上で言及したようなタイプのプログラマブルミラーアレイなどのプログラマブルパターニングデバイスを使用するマスクレスリソグラフィに容易に利用できる。
Claims (7)
- 基板上の第1のレジスト層に第1のマスクパターンを露光して第1の潜像レジストパターンを生成し、
前記第1の潜像レジストパターンを現像して現像レジストパターンを生成し、
前記現像レジストパターンを覆う第2のレジスト層を基板にコーティングし、
前記第2のレジスト層に第2のマスクパターンを露光することを含み、
前記第2のマスクパターンが、前記第1のパターンに基づく局所パターン調整を含む、デバイス製造方法。 - 前記局所パターン調整が、前記現像レジストパターンのフィーチャに隣接して位置する前記第2のマスクパターンのフィーチャをバイアスすることを含む、請求項1に記載の方法。
- 前記バイアスすることが、前記第2のマスクパターンの前記フィーチャのクリティカルディメンションを増加させることを含む、請求項2に記載の方法。
- 前記基板に前記第2のレジスト層をコーティングする前に前記現像レジストパターンを固定することをさらに含む、請求項1〜3のいずれか1の請求項に記載の方法。
- 前記現像レジストパターンを固定することが、前記現像レジストパターンを加熱することを含む、請求項4に記載の方法。
- 前記現像レジストパターンを固定することが、前記現像レジストパターンを試薬に反応させて保護コーティングを生成することを含む、請求項4に記載の方法。
- 前記第2のレジスト層が、前記第1のレジスト層とトーンが逆である、請求項1〜6のいずれか1の請求項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8369008P | 2008-07-25 | 2008-07-25 | |
US61/083,690 | 2008-07-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010034554A JP2010034554A (ja) | 2010-02-12 |
JP4922358B2 true JP4922358B2 (ja) | 2012-04-25 |
Family
ID=41568951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009168334A Expired - Fee Related JP4922358B2 (ja) | 2008-07-25 | 2009-07-17 | デバイス製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8142964B2 (ja) |
JP (1) | JP4922358B2 (ja) |
NL (1) | NL2003111A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8503800B2 (en) * | 2007-03-05 | 2013-08-06 | DigitalOptics Corporation Europe Limited | Illumination detection using classifier chains |
CN111142330B (zh) * | 2020-01-21 | 2023-04-07 | 冷水江市京科电子科技有限公司 | 一种防穿网的网版加工方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
JPH06324474A (ja) * | 1993-05-10 | 1994-11-25 | Nikon Corp | フオトマスク及び露光方法 |
KR100206597B1 (ko) * | 1995-12-29 | 1999-07-01 | 김영환 | 반도체 장치의 미세패턴 제조방법 |
JP3375828B2 (ja) * | 1996-06-19 | 2003-02-10 | 三菱電機株式会社 | 半導体装置の製法および該製法に用いられるフォトマスク |
US5994009A (en) | 1997-11-17 | 1999-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interlayer method utilizing CAD for process-induced proximity effect correction |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP3335139B2 (ja) * | 1999-06-04 | 2002-10-15 | キヤノン株式会社 | 露光方法、露光装置、およびデバイス製造方法 |
US6351304B1 (en) * | 1999-06-04 | 2002-02-26 | Canon Kabushiki Kaisha | Multiple exposure method |
US6760901B2 (en) | 2002-04-11 | 2004-07-06 | International Business Machines Corporation | Trough adjusted optical proximity correction for vias |
US7712056B2 (en) | 2002-06-07 | 2010-05-04 | Cadence Design Systems, Inc. | Characterization and verification for integrated circuit designs |
US6893800B2 (en) | 2002-09-24 | 2005-05-17 | Agere Systems, Inc. | Substrate topography compensation at mask design: 3D OPC topography anchored |
EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1420298B1 (en) | 2002-11-12 | 2013-02-20 | ASML Netherlands B.V. | Lithographic apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4480424B2 (ja) * | 2004-03-08 | 2010-06-16 | 富士通マイクロエレクトロニクス株式会社 | パターン形成方法 |
US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7781149B2 (en) * | 2005-03-23 | 2010-08-24 | Asml Netherlands B.V. | Reduced pitch multiple exposure process |
US7981595B2 (en) * | 2005-03-23 | 2011-07-19 | Asml Netherlands B.V. | Reduced pitch multiple exposure process |
KR100735535B1 (ko) | 2006-07-10 | 2007-07-04 | 삼성전자주식회사 | 마스크 제작 방법 |
US20080044739A1 (en) | 2006-08-17 | 2008-02-21 | Toshiba America Electronic Components, Inc. | Correction Of Resist Critical Dimension Variations In Lithography Processes |
WO2008059440A2 (en) * | 2006-11-14 | 2008-05-22 | Nxp B.V. | Double patterning for lithography to increase feature spatial density |
KR20080064456A (ko) * | 2007-01-05 | 2008-07-09 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
-
2009
- 2009-07-01 NL NL2003111A patent/NL2003111A1/nl not_active Application Discontinuation
- 2009-07-08 US US12/499,519 patent/US8142964B2/en not_active Expired - Fee Related
- 2009-07-17 JP JP2009168334A patent/JP4922358B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
NL2003111A1 (nl) | 2010-01-26 |
US20100021827A1 (en) | 2010-01-28 |
JP2010034554A (ja) | 2010-02-12 |
US8142964B2 (en) | 2012-03-27 |
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