JP5143535B2 - マルチレベル可変抵抗メモリ装置の駆動方法及びマルチレベル可変抵抗メモリ装置 - Google Patents
マルチレベル可変抵抗メモリ装置の駆動方法及びマルチレベル可変抵抗メモリ装置 Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0064—Verifying circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0078—Write using current through the cell
Description
120 ローデコーダ
130 カラムデコーダ
140 検証センスアンプ
150 第1センスアンプ
152 プリチャージ部
154 補償部
155 補償電圧選択部
156 クランピング部
158 比較部
170 書き込み制御回路
180 書き込みドライバ
Claims (19)
- 書き込み電流を可変抵抗メモリセルに提供して、前記可変抵抗メモリセルの抵抗を変化させ、
前記変化された抵抗が特定の抵抗ウィンドウ内へ入ったかどうかを検証して検証結果を出力し、
前記検証結果によって、直前に提供された書き込み電流より電流量を増加または減少させた書き込み電流を提供して、前記可変抵抗メモリセルの抵抗を変化させ、
前記検証を行い、前記検証結果によって書き込み電流の電流量を増加または減少させることを反復し、
前記反復回数が増加するほど、前記書き込み電流の増加または減少する程度が小さくなる
ことを含むマルチレベル可変抵抗メモリ装置の駆動方法。 - 前記特定抵抗ウィンドウは、第1基準抵抗及び第2基準抵抗と関連して定義される
ことを特徴とする請求項1に記載のマルチレベル可変抵抗メモリ装置の駆動方法。 - 前記検証の結果、前記変化された抵抗が前記第1基準抵抗より小さな場合、前記書き込み電流の電流量を増加させる
ことを特徴とする請求項2に記載のマルチレベル可変抵抗メモリ装置の駆動方法。 - 前記書き込み電流の電流量を増加させることは、前記書き込み電流の振幅を、前記直前に提供された書き込み電流の振幅より増加させることを含む
ことを特徴とする請求項3に記載のマルチレベル可変抵抗メモリ装置の駆動方法。 - 前記書き込み電流の電流量を増加させることは、前記書き込み電流のパルス幅を前記直前に提供された書き込み電流のパルス幅より増加させることを含む
ことを特徴とする請求項3に記載のマルチレベル可変抵抗メモリ装置の駆動方法。 - 前記検証の結果、前記変化された抵抗が前記第2基準抵抗より大きい場合、前記書き込み電流の電流量を減少させる
ことを特徴とする請求項2に記載のマルチレベル可変抵抗メモリ装置の駆動方法。 - 前記書き込み電流の電流量を減少させることは、前記書き込み電流の振幅を前記直前に提供された書き込み電流の振幅より減少させることを含む
ことを特徴とする請求項6に記載のマルチレベル可変抵抗メモリ装置の駆動方法。 - 前記書き込み電流の電流量を減少させることは、前記書き込み電流のパルス幅を前記直前に提供された書き込み電流のパルス幅より減少させることを含む
ことを特徴とする請求項6に記載のマルチレベル可変抵抗メモリ装置の駆動方法。 - 前記検証の結果、前記変化された抵抗が前記特定の抵抗ウィンドウ内へ入る場合、前記可変抵抗メモリセルにこれ以上書き込み電流を提供しない
ことを特徴とする請求項1に記載のマルチレベル可変抵抗メモリ装置の駆動方法。 - 前記可変抵抗メモリセルは2ビットセルである
ことを特徴とする請求項1に記載のマルチレベル可変抵抗メモリ装置の駆動方法。 - 前記可変抵抗メモリセルは、相変化メモリセルである
ことを特徴とする請求項1に記載のマルチレベル可変抵抗メモリ装置の駆動方法。 - 可変抵抗メモリセルを含むメモリセルアレイと、
前記可変抵抗メモリセルの抵抗が特定の抵抗ウィンドウ内に入ったかどうかを検証して検証結果を出力する検証センスアンプと、
前記検証結果によって書き込み電流の電流量を増加または減少させる制御信号を提供する書き込み制御回路と、
前記可変抵抗メモリセルに前記書き込み電流を提供し、前記制御信号に応答して前記書き込み電流の電流量を増加または減少させる書き込みドライバと、を備え、
前記書き込みドライバは、複数の書き込みループそれぞれに前記可変抵抗メモリセルに前記書き込み電流を提供し、前記書き込みループが進行するほど前記書き込み電流の増加または減少する程度が小さくなる
ことを特徴とするマルチレベル可変抵抗メモリ装置。 - 前記特定抵抗ウィンドウは、第1基準抵抗及び第2基準抵抗と関連して定義される
ことを特徴とする請求項12に記載のマルチレベル可変抵抗メモリ装置。 - 前記検証の結果、前記変化された抵抗が前記第1基準抵抗より小さな場合、前記書き込みドライバは前記書き込み電流の電流量を増加させる
ことを特徴とする請求項13に記載のマルチレベル可変抵抗メモリ装置。 - 前記検証の結果、前記変化された抵抗が前記第2基準抵抗より大きい場合、前記書き込みドライバは前記書き込み電流の電流量を減少させる
ことを特徴とする請求項13に記載のマルチレベル可変抵抗メモリ装置。 - 前記検証センスアンプは、
前記第1基準抵抗に対応する第1基準電圧を利用して前記可変抵抗メモリセルの抵抗をセンシングする第1センスアンプと、
前記第2基準抵抗に対応する第2基準電圧を利用して前記可変抵抗メモリセルの抵抗をセンシングする第2センスアンプと、を備える
ことを特徴とする請求項13に記載のマルチレベル可変抵抗メモリ装置。 - 前記検証の結果、前記変化された抵抗が前記特定の抵抗ウィンドウ内へ入る場合、前記書き込みドライバは前記可変抵抗メモリセルにこれ以上書き込み電流を提供しない
ことを特徴とする請求項12に記載のマルチレベル可変抵抗メモリ装置。 - 前記可変抵抗メモリセルは2ビットセルである
ことを特徴とする請求項12に記載のマルチレベル可変抵抗メモリ装置。 - 前記可変抵抗メモリセルは相変化メモリセルである
ことを特徴とする請求項12に記載のマルチレベル可変抵抗メモリ装置。
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Application Number | Priority Date | Filing Date | Title |
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KR10-2006-0119148 | 2006-11-29 | ||
KR1020060119148A KR100801082B1 (ko) | 2006-11-29 | 2006-11-29 | 멀티 레벨 가변 저항 메모리 장치의 구동 방법 및 멀티레벨 가변 저항 메모리 장치 |
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JP2008140535A JP2008140535A (ja) | 2008-06-19 |
JP5143535B2 true JP5143535B2 (ja) | 2013-02-13 |
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US (1) | US7639522B2 (ja) |
JP (1) | JP5143535B2 (ja) |
KR (1) | KR100801082B1 (ja) |
CN (1) | CN101192446A (ja) |
TW (1) | TWI453746B (ja) |
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