JP5134070B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5134070B2 JP5134070B2 JP2010280294A JP2010280294A JP5134070B2 JP 5134070 B2 JP5134070 B2 JP 5134070B2 JP 2010280294 A JP2010280294 A JP 2010280294A JP 2010280294 A JP2010280294 A JP 2010280294A JP 5134070 B2 JP5134070 B2 JP 5134070B2
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- oxide semiconductor
- semiconductor layer
- oxide
- transistor
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Description
本実施の形態では、本発明の一態様に係る半導体装置の構成および作製方法について、図1乃至図4を参照して説明する。
実施の形態1ではトップゲート型のトランジスタの作製例を示したが、本実施の形態では、ボトムゲート型のトランジスタの作製例について説明する。
本実施の形態では、チャネル保護型のトランジスタの例を図6を用いて示す。
本実施の形態では、先の実施の形態において説明した半導体装置を半導体集積回路に用いる場合の一例として、別の半導体材料を用いた半導体装置との積層構造による半導体装置について、図7を参照して説明する。
本実施の形態では、本発明の一態様に係る半導体装置の具体例として、記憶装置として機能する半導体装置の構成例を説明する。なお、ここでは、酸化物半導体を用いたトランジスタと、酸化物半導体以外の材料(例えば、シリコン)を用いたトランジスタと、を含む半導体装置について説明する。
本実施の形態では、c軸配向した酸化物半導体層を含むトランジスタを作製し、該トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製する場合について説明する。また、駆動回路の一部または全部を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
半導体装置の一形態に相当する発光表示パネル(発光パネルともいう)の外観及び断面について、図10を用いて説明する。図10(A)は、第1の基板上に形成されたc軸配向した酸化物半導体層を含むトランジスタ及び発光素子を、第2の基板との間にシール材によって封止した、パネルの平面図であり、図10(B)は、図10(A)のH−Iにおける断面図に相当する。
半導体装置の一形態として電子ペーパーの例を示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
102 絶縁層
104 第1の酸化物半導体層
104a 第1の酸化物半導体層
105 酸化物半導体層
106 第2の酸化物半導体層
106a 第2の酸化物半導体層
108 導電層
108a ソース電極層
108b ドレイン電極層
112 ゲート絶縁層
114 ゲート電極層
116 層間絶縁層
118 層間絶縁層
150 トランジスタ
200 基板
206 素子分離絶縁層
208a ゲート絶縁層
210a ゲート電極層
214 不純物領域
216 チャネル形成領域
218 サイドウォール絶縁層
220 高濃度不純物領域
224 金属化合物領域
226 層間絶縁層
228 層間絶縁層
230a ドレイン電極層
230b ドレイン電極層
230c 電極
234 絶縁層
236a 電極
236b 電極
236c 電極
250 トランジスタ
254a 電極
254b 電極
254c 電極
254d 電極
254e 電極
256 絶縁層
258a 電極
258b 電極
258c 電極
258d 電極
300 トランジスタ
302 トランジスタ
400 基板
401 ゲート電極層
402 ゲート絶縁層
404 第1の酸化物半導体層
404a 第1の酸化物半導体層
406 第2の酸化物半導体層
406a 第2の酸化物半導体層
408a ソース電極層
408b ドレイン電極層
412 酸化物絶縁層
414 電極層
416 層間絶縁層
418 層間絶縁層
450 トランジスタ
451 トランジスタ
500 基板
501 ゲート電極層
502 ゲート絶縁層
504a 第1の酸化物半導体層
506a 第2の酸化物半導体層
508a ソース電極層
508b ドレイン電極層
516 層間絶縁層
518 層間絶縁層
520 酸化物絶縁層
550 トランジスタ
580 第1の基板
581 トランジスタ
583 絶縁層
584 絶縁層
585 絶縁層
587 電極層
588 電極層
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
596 第2の基板
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカー
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ
2808 外部接続端子
2810 太陽電池
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
3021 本体
3022 スタイラス
3023 表示部
3024 操作ボタン
3025 外部インターフェイス
3051 本体
3053 接眼部
3054 操作スイッチ
3055 表示部(B)
3056 バッテリー
3057 表示部(A)
4001 第1の基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 第2の基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4014 絶縁層
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電層
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4040 導電層
4501 第1の基板
4502 画素部
4503a 信号線駆動回路
4504a 走査線駆動回路
4505 シール材
4506 第2の基板
4507 充填材
4509 トランジスタ
4510 トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4514 保護絶縁層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4519 異方性導電層
4520 隔壁
4540 導電層
4541 絶縁層
4544 絶縁層
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
Claims (1)
- 絶縁表面を有する基板上に第1の酸化物半導体層を形成し、
前記第1の酸化物半導体層を含む構造体に対して第1の加熱処理を行うことにより、前記第1の酸化物半導体層の表面から内部に向かって成長し、前記第1の酸化物半導体層の表面と略垂直な方向にc軸が配向する結晶領域を形成し、
前記結晶領域を有する第1の酸化物半導体層上に第2の酸化物半導体層を形成し、
前記第1及び第2の酸化物半導体層を含む構造体に対して酸素を含む雰囲気下での一定温度の加熱処理条件を含む第2の加熱処理を行うことにより、前記結晶領域を種として前記第2の酸化物半導体層がc軸配向する結晶成長と、前記第1及び第2の酸化物半導体層中への酸素供給を行い、前記第2の加熱処理が行われた第2の酸化物半導体層上に導電層を形成し、
前記導電層を選択的にエッチングすることにより、ソース電極層及びドレイン電極層を形成し、
前記ソース電極層、ドレイン電極層及び前記第2の酸化物半導体層を覆うように酸化物絶縁層を形成し、
前記酸化物絶縁層を含む構造体に対して第3の加熱処理を行うことにより、前記第2の酸化物半導体層に酸素を供給し、前記酸素が供給された第2の酸化物半導体と重畳する前記酸化物絶縁層上の領域にゲート電極層を形成し、
前記ゲート電極層及び前記酸化物絶縁層上に水素を含む窒化物絶縁層を形成し、
前記窒化物絶縁層を含む構造体に第4の加熱処理を行うことにより、少なくとも前記第1及び第2の酸化物半導体層の内部と、該酸化物半導体層と接する前記酸化物絶縁層との界面に存在する未結合手を水素終端させることを特徴とする半導体装置の作製方法。
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US20110151618A1 (en) | 2011-06-23 |
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