JP5695535B2 - 表示装置の製造方法 - Google Patents
表示装置の製造方法 Download PDFInfo
- Publication number
- JP5695535B2 JP5695535B2 JP2011211661A JP2011211661A JP5695535B2 JP 5695535 B2 JP5695535 B2 JP 5695535B2 JP 2011211661 A JP2011211661 A JP 2011211661A JP 2011211661 A JP2011211661 A JP 2011211661A JP 5695535 B2 JP5695535 B2 JP 5695535B2
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
Description
を有する。
なお、本明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
また、支持基板90の透湿度は、支持基板90とフィルム層110との剥離性に影響がある。フィルム材料層111に含まれる有機溶剤が、フィルム材料層111を乾燥する際およびイミド化する際に、支持基板90とフィルム層110との界面に集中する。またイミド化により生成される水分子が支持基板90とポリイミドフィルム層110との界面に集中する。これにより、支持基板90とフィルム層110の密着が阻害される。従って、後にフィルム層110上に画素回路部312、周辺回路部321、表示層311や実装部322を形成する際に、フィルム層110が支持基板90から容易に剥離してしまう場合がある。
第2の加熱工程による支持基板とフィルム層との密着力の評価を行ったので以下に説明する。
ガラス基板上(膜厚700μm)に塗布形成したポリイミドフィルム(10μm)に上部支持基板としてPEN基板を貼り付け、レーザ照射による密着性およびポリイミドの状態に関する評価を行った。レーザとしてXeClエキシマレーザ(中心波長308 nm)を用い、ガラス基板を介してポリイミド界面に照射した。XeClレーザをパルス化し、ビームをライン形状200mm×0.4mmとした。
また、各具体例のいずれか2つ以上の要素を技術的に可能な範囲で組み合わせたものも、本発明の要旨を包含する限り本発明の範囲に含まれる。
Claims (6)
- 支持基板の上にフィルム材料層を形成する工程と、
前記フィルム材料層を加熱してポリイミドを含むフィルム層を形成する第1の加熱工程と、
前記フィルム層の中央部に設けられた第1領域を囲む第2領域を、前記第1の加熱工程より高い温度で加熱する第2の加熱工程と、
前記第1領域の一部に表示層を形成し前記第2領域の少なくとも一部に周辺回路部を形成する工程と、
前記フィルム層のうち表示層が形成された範囲以外の少なくとも一部を前記第2の加熱工程より高い温度で加熱する第3の加熱工程と、
前記支持基板と前記フィルム層とを剥離する工程と、
を有する表示装置の製造方法。 - 前記第2の加熱工程における前記フィルム層の温度は、前記第1の加熱工程における前記フィルム層の温度よりも高い請求項1に記載の表示装置の製造方法。
- 前記第3の加熱工程における前記フィルム層の温度は、前記第1の加熱工程における前記フィルム層の温度よりも高い請求項1または2に記載の表示装置の製造方法。
- 前記第2の加熱工程は、前記フィルム層にレーザを照射するか、前記フィルム層をハロゲンランプにより加熱することにより行う請求項1乃至3のいずれか1項に記載の表示装置の製造方法。
- 前記第3の加熱工程は、前記フィルム層にレーザを照射するか、前記フィルム層をハロゲンランプにより加熱することにより行う請求項1乃至4のいずれか1項に記載の表示装置の製造方法。
- 前記第1の加熱工程は、ランプアニール、ホットプレート、およびオーブンのいずれかを用いて行う請求項1乃至5のいずれか1項に記載の表示装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011211661A JP5695535B2 (ja) | 2011-09-27 | 2011-09-27 | 表示装置の製造方法 |
US13/483,672 US8513040B2 (en) | 2011-09-27 | 2012-05-30 | Method for manufacturing display device |
KR1020120057590A KR101311678B1 (ko) | 2011-09-27 | 2012-05-30 | 표시 장치의 제조 방법 |
TW101119538A TWI523067B (zh) | 2011-09-27 | 2012-05-31 | 顯示裝置之製造方法 |
CN201210177907.6A CN103021938B (zh) | 2011-09-27 | 2012-05-31 | 制造显示设备的方法 |
US13/944,266 US9204554B2 (en) | 2011-09-27 | 2013-07-17 | Method for manufacturing display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011211661A JP5695535B2 (ja) | 2011-09-27 | 2011-09-27 | 表示装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013073001A JP2013073001A (ja) | 2013-04-22 |
JP5695535B2 true JP5695535B2 (ja) | 2015-04-08 |
Family
ID=47911701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011211661A Expired - Fee Related JP5695535B2 (ja) | 2011-09-27 | 2011-09-27 | 表示装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8513040B2 (ja) |
JP (1) | JP5695535B2 (ja) |
KR (1) | KR101311678B1 (ja) |
CN (1) | CN103021938B (ja) |
TW (1) | TWI523067B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5695535B2 (ja) * | 2011-09-27 | 2015-04-08 | 株式会社東芝 | 表示装置の製造方法 |
JP5964807B2 (ja) | 2013-08-30 | 2016-08-03 | エルジー ディスプレイ カンパニー リミテッド | フレキシブル有機電界発光装置及びその製造方法 |
JP6234391B2 (ja) * | 2014-02-28 | 2017-11-22 | 新日鉄住金化学株式会社 | 表示装置の製造方法及び表示装置用樹脂溶液 |
EP3284118A4 (en) * | 2015-04-13 | 2019-04-03 | Royole Corporation | SUPPORT AND SEPARATION OF SOFT SUBSTRATES |
JP6755202B2 (ja) * | 2017-02-09 | 2020-09-16 | 住友化学株式会社 | 有機電子デバイスの製造方法 |
WO2019030819A1 (ja) | 2017-08-08 | 2019-02-14 | シャープ株式会社 | Elデバイスの製造方法 |
CN109795038B (zh) * | 2019-01-22 | 2021-07-06 | Tcl华星光电技术有限公司 | 切割装置及采用该切割装置的基板边缘端子去除装置 |
CN111900195B (zh) * | 2020-09-08 | 2023-12-19 | 京东方科技集团股份有限公司 | 显示基板及其制备方法和显示装置 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6197218B1 (en) * | 1997-02-24 | 2001-03-06 | Superior Micropowders Llc | Photoluminescent phosphor powders, methods for making phosphor powders and devices incorporating same |
JP2000056474A (ja) * | 1998-08-05 | 2000-02-25 | Tokyo Electron Ltd | 基板処理方法 |
JP2000252342A (ja) * | 1999-03-01 | 2000-09-14 | Seiko Epson Corp | 薄板の搬送方法および液晶パネルの製造方法 |
TW494447B (en) * | 2000-02-01 | 2002-07-11 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
JP2002229473A (ja) * | 2001-01-31 | 2002-08-14 | Canon Inc | 表示装置の製造方法 |
US7001778B2 (en) * | 2001-03-09 | 2006-02-21 | Symetrix Corporation | Method of making layered superlattice material with improved microstructure |
US7119365B2 (en) * | 2002-03-26 | 2006-10-10 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
EP1369499A3 (en) * | 2002-04-15 | 2004-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device |
GB0327093D0 (en) * | 2003-11-21 | 2003-12-24 | Koninkl Philips Electronics Nv | Active matrix displays and other electronic devices having plastic substrates |
JP4734837B2 (ja) * | 2004-03-23 | 2011-07-27 | 宇部興産株式会社 | 接着性の改良されたポリイミドフィルム、その製造方法および積層体 |
JP4854994B2 (ja) * | 2004-06-28 | 2012-01-18 | 株式会社半導体エネルギー研究所 | 配線基板の作製方法及び薄膜トランジスタの作製方法 |
KR100666564B1 (ko) * | 2004-08-04 | 2007-01-09 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조 방법 |
US7439111B2 (en) * | 2004-09-29 | 2008-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2006068246A1 (ja) * | 2004-12-22 | 2006-06-29 | Ube Industries, Ltd. | 表面活性が向上したポリイミドフィルム |
JP2007256666A (ja) * | 2006-03-23 | 2007-10-04 | Nec Lcd Technologies Ltd | 基板処理方法及びそれに用いる薬液 |
JP5145654B2 (ja) * | 2006-05-29 | 2013-02-20 | 日本電気株式会社 | 基板処理装置及び基板処理方法 |
CN101501832A (zh) * | 2006-08-10 | 2009-08-05 | 皇家飞利浦电子股份有限公司 | 具有塑料基底的有源矩阵显示器和其他电子器件 |
TWI570900B (zh) | 2006-09-29 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP2008166127A (ja) * | 2006-12-28 | 2008-07-17 | Canon Inc | 有機elディスプレイ用基板 |
KR100839735B1 (ko) * | 2006-12-29 | 2008-06-19 | 삼성에스디아이 주식회사 | 트랜지스터, 이의 제조 방법 및 이를 구비한 평판 표시장치 |
JP2008235010A (ja) | 2007-03-20 | 2008-10-02 | Sony Corp | 表示装置の製造方法 |
WO2008139745A1 (ja) * | 2007-05-15 | 2008-11-20 | Sharp Kabushiki Kaisha | 表示デバイスの製造方法及び表示デバイス |
JP5442224B2 (ja) * | 2007-07-23 | 2014-03-12 | 株式会社半導体エネルギー研究所 | Soi基板の製造方法 |
US7968388B2 (en) * | 2007-08-31 | 2011-06-28 | Seiko Epson Corporation | Thin-film device, method for manufacturing thin-film device, and display |
KR101428719B1 (ko) * | 2008-05-22 | 2014-08-12 | 삼성전자 주식회사 | 발광 소자 및 발광 장치의 제조 방법, 상기 방법을이용하여 제조한 발광 소자 및 발광 장치 |
US20110070370A1 (en) * | 2008-05-28 | 2011-03-24 | Aixtron Ag | Thermal gradient enhanced chemical vapour deposition (tge-cvd) |
JP2010010247A (ja) * | 2008-06-25 | 2010-01-14 | Sharp Corp | 基板搬送用治具、及び素子基板の製造方法 |
JP2010040380A (ja) * | 2008-08-06 | 2010-02-18 | Hitachi Displays Ltd | 有機elパネルの製造方法 |
US20100068898A1 (en) * | 2008-09-17 | 2010-03-18 | Stephen Moffatt | Managing thermal budget in annealing of substrates |
US8587063B2 (en) * | 2009-11-06 | 2013-11-19 | International Business Machines Corporation | Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels |
WO2011074409A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2011171551A (ja) * | 2010-02-19 | 2011-09-01 | Toyota Motor Corp | 半導体装置の製造方法 |
JP5695535B2 (ja) * | 2011-09-27 | 2015-04-08 | 株式会社東芝 | 表示装置の製造方法 |
-
2011
- 2011-09-27 JP JP2011211661A patent/JP5695535B2/ja not_active Expired - Fee Related
-
2012
- 2012-05-30 US US13/483,672 patent/US8513040B2/en not_active Expired - Fee Related
- 2012-05-30 KR KR1020120057590A patent/KR101311678B1/ko not_active IP Right Cessation
- 2012-05-31 CN CN201210177907.6A patent/CN103021938B/zh not_active Expired - Fee Related
- 2012-05-31 TW TW101119538A patent/TWI523067B/zh not_active IP Right Cessation
-
2013
- 2013-07-17 US US13/944,266 patent/US9204554B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI523067B (zh) | 2016-02-21 |
US20130078752A1 (en) | 2013-03-28 |
CN103021938A (zh) | 2013-04-03 |
US9204554B2 (en) | 2015-12-01 |
JP2013073001A (ja) | 2013-04-22 |
TW201314740A (zh) | 2013-04-01 |
US8513040B2 (en) | 2013-08-20 |
US20130302534A1 (en) | 2013-11-14 |
KR101311678B1 (ko) | 2013-09-25 |
CN103021938B (zh) | 2014-10-15 |
KR20130033942A (ko) | 2013-04-04 |
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