JP2013073001A - 表示装置の製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000010438 heat treatment Methods 0.000 claims abstract description 78
- 239000000463 material Substances 0.000 claims abstract description 31
- 230000002093 peripheral effect Effects 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 26
- 229920001721 polyimide Polymers 0.000 claims abstract description 19
- 239000004642 Polyimide Substances 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 161
- 239000010408 film Substances 0.000 description 133
- 239000004065 semiconductor Substances 0.000 description 17
- 239000011521 glass Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920005575 poly(amic acid) Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004693 Polybenzimidazole Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000005462 imide group Chemical group 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- -1 silicon nitride Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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Abstract
【解決手段】
表示装置の製造方法は、支持基板の上にフィルム材料層を形成する工程と、前記フィルム材料層を加熱してフィルム層を形成する第1の加熱工程と、前記フィルム層の中央部に設けられた第1領域を囲む第2領域を、前記第1の加熱工程より高い温度で加熱する第2の加熱工程と、前記第1領域の一部に表示層を形成し前記第2領域の少なくとも一部に周辺回路部を形成する工程と、前記フィルム層のうち表示層が形成された範囲以外の少なくとも一部を前記第2の加熱工程より高い温度で加熱する第3の加熱工程と、前記支持基板と前記フィルム層とを剥離する工程と、を有する。
【選択図】図4
Description
を有する。
なお、本明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
また、支持基板90の透湿度は、支持基板90とフィルム層110との剥離性に影響がある。フィルム材料層111に含まれる有機溶剤が、フィルム材料層111を乾燥する際およびイミド化する際に、支持基板90とフィルム層110との界面に集中する。またイミド化により生成される水分子が支持基板90とポリイミドフィルム層110との界面に集中する。これにより、支持基板90とフィルム層110の密着が阻害される。従って、後にフィルム層110上に画素回路部312、周辺回路部321、表示層311や実装部322を形成する際に、フィルム層110が支持基板90から容易に剥離してしまう場合がある。
第2の加熱工程による支持基板とフィルム層との密着力の評価を行ったので以下に説明する。
ガラス基板上(膜厚700μm)に塗布形成したポリイミドフィルム(10μm)に上部支持基板としてPEN基板を貼り付け、レーザ照射による密着性およびポリイミドの状態に関する評価を行った。レーザとしてXeClエキシマレーザ(中心波長308 nm)を用い、ガラス基板を介してポリイミド界面に照射した。XeClレーザをパルス化し、ビームをライン形状200mm×0.4mmとした。
また、各具体例のいずれか2つ以上の要素を技術的に可能な範囲で組み合わせたものも、本発明の要旨を包含する限り本発明の範囲に含まれる。
Claims (7)
- 支持基板の上にフィルム材料層を形成する工程と、
前記フィルム材料層を加熱してフィルム層を形成する第1の加熱工程と、
前記フィルム層の中央部に設けられた第1領域を囲む第2領域を、前記第1の加熱工程より高い温度で加熱する第2の加熱工程と、
前記第1領域の一部に表示層を形成し前記第2領域の少なくとも一部に周辺回路部を形成する工程と、
前記フィルム層のうち表示層が形成された範囲以外の少なくとも一部を前記第2の加熱工程より高い温度で加熱する第3の加熱工程と、
前記支持基板と前記フィルム層とを剥離する工程と、
を有する表示装置の製造方法。 - 前記第2の加熱工程における前記フィルム層の温度は、前記第1の加熱工程における前記フィルム層の温度よりも高い請求項1に記載の表示装置の製造方法。
- 前記第3の加熱工程における前記フィルム層の温度は、前記第1の加熱工程における前記フィルム層の温度よりも高い請求項2に記載の表示装置の製造方法。
- 前記第2の加熱工程は、前記フィルム層にレーザを照射するか、前記フィルム層をハロゲンランプにより加熱することにより行う請求項3に記載の表示装置の製造方法。
- 前記第3の加熱工程は、前記フィルム層にレーザを照射するか、前記フィルム層をハロゲンランプにより加熱することにより行う請求項4に記載の表示装置の製造方法。
- 前記第1の加熱工程は、ランプアニール、ホットプレート、およびオーブンのいずれかを用いて行う請求項5に記載の表示装置の製造方法。
- 前記フィルム層はポリイミドを含む材料で形成される請求項6に記載の表示装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011211661A JP5695535B2 (ja) | 2011-09-27 | 2011-09-27 | 表示装置の製造方法 |
KR1020120057590A KR101311678B1 (ko) | 2011-09-27 | 2012-05-30 | 표시 장치의 제조 방법 |
US13/483,672 US8513040B2 (en) | 2011-09-27 | 2012-05-30 | Method for manufacturing display device |
TW101119538A TWI523067B (zh) | 2011-09-27 | 2012-05-31 | 顯示裝置之製造方法 |
CN201210177907.6A CN103021938B (zh) | 2011-09-27 | 2012-05-31 | 制造显示设备的方法 |
US13/944,266 US9204554B2 (en) | 2011-09-27 | 2013-07-17 | Method for manufacturing display device |
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JP2011211661A JP5695535B2 (ja) | 2011-09-27 | 2011-09-27 | 表示装置の製造方法 |
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JP2013073001A true JP2013073001A (ja) | 2013-04-22 |
JP5695535B2 JP5695535B2 (ja) | 2015-04-08 |
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JP2011211661A Expired - Fee Related JP5695535B2 (ja) | 2011-09-27 | 2011-09-27 | 表示装置の製造方法 |
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US (2) | US8513040B2 (ja) |
JP (1) | JP5695535B2 (ja) |
KR (1) | KR101311678B1 (ja) |
CN (1) | CN103021938B (ja) |
TW (1) | TWI523067B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015050181A (ja) * | 2013-08-30 | 2015-03-16 | エルジー ディスプレイ カンパニー リミテッド | フレキシブル有機電界発光装置及びその製造方法 |
KR20150102716A (ko) | 2014-02-28 | 2015-09-07 | 신닛테츠 수미킨 가가쿠 가부시키가이샤 | 표시장치의 제조 방법 및 표시장치용 수지용액 |
JP2018518043A (ja) * | 2015-04-13 | 2018-07-05 | ロイヨール コーポレーション | 可撓性基板の支持及び取り外し |
JP2018129225A (ja) * | 2017-02-09 | 2018-08-16 | 住友化学株式会社 | 有機電子デバイスの製造方法 |
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Also Published As
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KR20130033942A (ko) | 2013-04-04 |
US20130302534A1 (en) | 2013-11-14 |
CN103021938A (zh) | 2013-04-03 |
CN103021938B (zh) | 2014-10-15 |
TWI523067B (zh) | 2016-02-21 |
KR101311678B1 (ko) | 2013-09-25 |
US9204554B2 (en) | 2015-12-01 |
US8513040B2 (en) | 2013-08-20 |
TW201314740A (zh) | 2013-04-01 |
JP5695535B2 (ja) | 2015-04-08 |
US20130078752A1 (en) | 2013-03-28 |
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