JP5094057B2 - 半導体素子のキャパシタ製造方法 - Google Patents
半導体素子のキャパシタ製造方法 Download PDFInfo
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- JP5094057B2 JP5094057B2 JP2006181112A JP2006181112A JP5094057B2 JP 5094057 B2 JP5094057 B2 JP 5094057B2 JP 2006181112 A JP2006181112 A JP 2006181112A JP 2006181112 A JP2006181112 A JP 2006181112A JP 5094057 B2 JP5094057 B2 JP 5094057B2
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- 239000003990 capacitor Substances 0.000 title claims description 43
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000007789 gas Substances 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 44
- 238000010926 purge Methods 0.000 claims description 25
- 238000000137 annealing Methods 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 239000012495 reaction gas Substances 0.000 claims description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 229910007926 ZrCl Inorganic materials 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- 239000010408 film Substances 0.000 description 54
- 238000000231 atomic layer deposition Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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Description
12 層間絶縁膜
13 コンタクトホール
14 ストレージノードコンタクト
15 下部電極
16 ZrxAlyOz誘電膜
17 上部電極
Claims (13)
- 半導体基板上に下部電極を形成するステップと、
前記下部電極上にALD法を利用して、ジルコニウム、アルミニウム及び酸素がそれぞれ所定のモル分率x、y、及びzを有して混合されたZrxAlyOz誘電膜を形成するステップと、
前記誘電膜上に上部電極を形成するステップとを含み、
前記ZrxAlyOz誘電膜を形成するステップにおいて、
Zrソースガスを用いて前記下部電極にZrソースを吸着させるステップ、
第1のパージガスを供給して未吸着の前記Zrソースガスを除去するステップ、
前記下部電極上に吸着された前記Zrソース上に、Alソースガスを用いてAlソースを吸着させるステップ、
第2のパージガスを供給して未吸着の前記Alソースガスを除去するステップ、
反応ガスを供給し、前記下部電極上に吸着された前記Zrソース及びAlソースと反応させて前記ZrxAlyOz誘電膜を形成するステップ、及び
第3のパージガスを供給して未反応の前記反応ガスを除去するステップを順に実行することを単位サイクルとして、前記ZrxAlyOz誘電膜を形成するとともに、
前記反応ガスが、濃度が100〜500g/m 3 であるO 3 、O 2 、プラズマO 2 、 N 2 O、プラズマN 2 O、及びH 2 O蒸気からなる群の中から選択されるいずれか1つを含み、0.1〜1slmの範囲の流量で3〜10秒間供給され、
前記第1、第2、及び第3のパージガスが、N 2 ガス又はArガスを含むことを特徴とする半導体素子のキャパシタ製造方法。 - 前記ZrxAlyOz誘電膜において、
前記モル分率x、y及びzの合計が1であり、前記モル分率xを前記モル分率yで除した値が1〜10の範囲内の値であることを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。 - 前記Zrソースガスが、
ZrCl4、Zr[N(CH3)C2H5]4、Zr(O−tBu)4、 Zr[N(CH3)2]4、Zr[N(C2H5)(CH3)]4、Zr[N(C2H5)2)]4、Zr(tmhd)4、Zr(OiC3H7)3(tmtd)、Zr(OtBu)4、及びZrを含有した化合物からなる群の中から選択されるいずれか1つを含むことを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。 - 前記Alソースガスが、
Al(CH3)3、Al(C2H5)3、及びAlを含有した化合物からなる群の中から選択されるいずれか1つを含むことを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。 - 前記ZrxAlyOz誘電膜が、50Å〜100Åの範囲の厚さに形成されることを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記ZrxAlyOz誘電膜を形成する際、前記半導体基板の温度を200℃〜500℃の範囲内の温度にし、反応チャンバーの圧力を13.3〜133.3Pa(0.1〜1Torr)の範囲内の圧力にすることを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記ZrxAlyOz誘電膜を形成する前記ステップの後に、アニーリングを行うステップをさらに含むことを特徴とする請求項1又は3に記載の半導体素子のキャパシタ製造方法。
- 前記アニーリングが、200℃〜500℃の温度、13.3〜1333Pa(0.1〜10Torr)の圧力、及び5sccm〜5slmの流量で供給される、N2、H2、N2/H2、NH3、N2O、N2/O2及びO3からなる群の中から選択されるいずれか1つのガスの雰囲気で、プラズマを用いた1〜5分間のアニーリングであり、且つ、前記プラズマが、100〜500Wの範囲のRFパワーを有することを特徴とする請求項7に記載の半導体素子のキャパシタ製造方法。
- 前記アニーリングが、
500℃〜800℃の温度を有する933〜1013hPa(700〜760Torr)の常圧又は1.3〜133.3hPa(1〜100Torr)の減圧のチャンバー内で、N2、H2、N2/H2、NH3、N2O、N2/O2、及びO3からなる群の中から選択されるいずれか1つのガスを5sccm〜5slmの範囲内の流量でフローさせながら、RTP法によって行われることを特徴とする請求項7に記載の半導体素子のキャパシタ製造方法。 - 前記アニーリングが、
600℃〜800℃の範囲の温度でN2、H2、N2/H2、NH3、N2O、N2/O2及びO3からなる群の中から選択されるいずれか1つのガスを5sccm〜5slmの範囲内の流量でフローさせながら、電気炉で行われるアニーリングであることを特徴とする請求項7に記載の半導体素子のキャパシタ製造方法。 - 前記下部電極及び前記上部電極が、TiN、TaN、W、WN、Ru、RuO2、Ir、IrO2、及びPtからなる群の中から選択されるいずれか1つの物質を含んで形成されることを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記下部電極を形成する前記ステップの後に、N2、H2、N2/H2、O2、O3、及びNH3からなる群の中から選択されるいずれか1つのガスの雰囲気でアニーリングを行うステップをさらに含むことを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
- 前記上部電極を形成する前記ステップの後に、前記上部電極が形成された基板上にAl2O3、HfO2、Ta2O5、ZrO2、TiO2及びLa2O3からなる群の中から選択されるいずれか1つの酸化膜又は金属膜からなる保護膜をALD法で50〜200Åの厚さに形成するステップをさらに含むことを特徴とする請求項1に記載の半導体素子のキャパシタ製造方法。
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Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008108128A1 (ja) * | 2007-03-08 | 2008-09-12 | Nec Corporation | 誘電体、誘電体を用いたキャパシタ、誘電体を用いた半導体装置、及び誘電体の製造方法 |
JP5133643B2 (ja) * | 2007-09-28 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
WO2009057589A1 (ja) * | 2007-10-30 | 2009-05-07 | Nec Corporation | キャパシタとそれを有する半導体装置およびキャパシタの製造方法 |
JP5262233B2 (ja) * | 2008-03-27 | 2013-08-14 | 日本電気株式会社 | 窒化ジルコニウム界面層を有するキャパシター構造 |
US7704884B2 (en) | 2008-04-11 | 2010-04-27 | Micron Technology, Inc. | Semiconductor processing methods |
US7820506B2 (en) * | 2008-10-15 | 2010-10-26 | Micron Technology, Inc. | Capacitors, dielectric structures, and methods of forming dielectric structures |
JP5504663B2 (ja) * | 2009-03-25 | 2014-05-28 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5462885B2 (ja) * | 2009-12-18 | 2014-04-02 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
JP5587716B2 (ja) * | 2010-09-27 | 2014-09-10 | マイクロンメモリジャパン株式会社 | 半導体装置及びその製造方法、並びに吸着サイト・ブロッキング原子層堆積法 |
JP2014017354A (ja) * | 2012-07-09 | 2014-01-30 | Tokyo Electron Ltd | 成膜方法 |
JP2014218691A (ja) * | 2013-05-07 | 2014-11-20 | エア・ウォーター株式会社 | 層状構造体の製造方法 |
KR102364708B1 (ko) * | 2017-07-12 | 2022-02-21 | 삼성디스플레이 주식회사 | 표시 장치의 제조 방법 |
CN107527806A (zh) * | 2017-09-29 | 2017-12-29 | 睿力集成电路有限公司 | 介电薄膜、介电层结构及制作方法 |
KR20210012808A (ko) | 2019-07-26 | 2021-02-03 | 삼성전자주식회사 | 2종 물질 산화막의 형성 방법, 반도체 소자의 제조 방법, 유전막 형성 방법, 및 반도체 소자 |
US20220216297A1 (en) * | 2021-01-05 | 2022-07-07 | Changxin Memory Technologies, Inc. | Electrode layer, capacitor and methods for electrode layer and capacitor manufacture |
WO2023163499A1 (ko) * | 2022-02-24 | 2023-08-31 | 주성엔지니어링(주) | 유전막과 그를 포함한 커패시터 및 그들의 제조 방법 |
Family Cites Families (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6297539B1 (en) * | 1999-07-19 | 2001-10-02 | Sharp Laboratories Of America, Inc. | Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same |
KR100363084B1 (ko) | 1999-10-19 | 2002-11-30 | 삼성전자 주식회사 | 박막 구조를 위한 다중막을 포함하는 커패시터 및 그 제조 방법 |
US6407435B1 (en) | 2000-02-11 | 2002-06-18 | Sharp Laboratories Of America, Inc. | Multilayer dielectric stack and method |
US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
DE10034003A1 (de) | 2000-07-07 | 2002-01-24 | Infineon Technologies Ag | Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren |
KR100663341B1 (ko) | 2000-08-11 | 2007-01-02 | 삼성전자주식회사 | 원자층 증착 캐패시터 제조방법 및 장치 |
US6664186B1 (en) | 2000-09-29 | 2003-12-16 | International Business Machines Corporation | Method of film deposition, and fabrication of structures |
US6660660B2 (en) | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
US6486080B2 (en) * | 2000-11-30 | 2002-11-26 | Chartered Semiconductor Manufacturing Ltd. | Method to form zirconium oxide and hafnium oxide for high dielectric constant materials |
KR20020049875A (ko) * | 2000-12-20 | 2002-06-26 | 윤종용 | 반도체 메모리 소자의 강유전체 커패시터 및 그 제조방법 |
WO2002059956A1 (fr) * | 2001-01-25 | 2002-08-01 | Tokyo Electron Limited | Procede de fabrication d'un materiau de dispositif electronique |
JP2002222934A (ja) | 2001-01-29 | 2002-08-09 | Nec Corp | 半導体装置およびその製造方法 |
US6858865B2 (en) | 2001-02-23 | 2005-02-22 | Micron Technology, Inc. | Doped aluminum oxide dielectrics |
US6486057B1 (en) * | 2001-04-12 | 2002-11-26 | National Science Council | Process for preparing Cu damascene interconnection |
JP2002314072A (ja) | 2001-04-19 | 2002-10-25 | Nec Corp | 高誘電体薄膜を備えた半導体装置及びその製造方法並びに誘電体膜の成膜装置 |
US20020168840A1 (en) * | 2001-05-11 | 2002-11-14 | Applied Materials, Inc. | Deposition of tungsten silicide films |
JP3863391B2 (ja) | 2001-06-13 | 2006-12-27 | Necエレクトロニクス株式会社 | 半導体装置 |
US6797525B2 (en) | 2002-05-22 | 2004-09-28 | Agere Systems Inc. | Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process |
KR100476926B1 (ko) * | 2002-07-02 | 2005-03-17 | 삼성전자주식회사 | 반도체 소자의 듀얼 게이트 형성방법 |
KR100542736B1 (ko) * | 2002-08-17 | 2006-01-11 | 삼성전자주식회사 | 원자층 증착법을 이용한 산화막의 형성방법 및 이를이용한 반도체 장치의 캐패시터 형성방법 |
TWI223329B (en) | 2002-09-10 | 2004-11-01 | Samsung Electronics Co Ltd | Method for forming high dielectric layer in semiconductor device |
JP2004111447A (ja) | 2002-09-13 | 2004-04-08 | Handotai Rikougaku Kenkyu Center:Kk | 半導体装置及びその製造方法 |
US6940117B2 (en) | 2002-12-03 | 2005-09-06 | International Business Machines Corporation | Prevention of Ta2O5 mim cap shorting in the beol anneal cycles |
US6753224B1 (en) * | 2002-12-19 | 2004-06-22 | Taiwan Semiconductor Manufacturing Company | Layer of high-k inter-poly dielectric |
JP4290421B2 (ja) * | 2002-12-27 | 2009-07-08 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
KR20040059536A (ko) | 2002-12-27 | 2004-07-06 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조방법 |
KR100493040B1 (ko) | 2002-12-30 | 2005-06-07 | 삼성전자주식회사 | 반도체 소자의 커패시터 및 그 제조방법 |
EP2270051B1 (en) | 2003-01-23 | 2019-05-15 | Ono Pharmaceutical Co., Ltd. | Antibody specific for human PD-1 and CD3 |
US7135369B2 (en) * | 2003-03-31 | 2006-11-14 | Micron Technology, Inc. | Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9 |
US7092234B2 (en) | 2003-05-20 | 2006-08-15 | Micron Technology, Inc. | DRAM cells and electronic systems |
KR100555543B1 (ko) | 2003-06-24 | 2006-03-03 | 삼성전자주식회사 | 원자층 증착법에 의한 고유전막 형성 방법 및 그고유전막을 갖는 커패시터의 제조 방법 |
US20050054156A1 (en) * | 2003-09-10 | 2005-03-10 | International Business Machines Corporation | Capacitor and fabrication method using ultra-high vacuum cvd of silicon nitride |
KR20050028749A (ko) | 2003-09-19 | 2005-03-23 | 삼성전자주식회사 | 다층 구조의 커패시터들 갖는 반도체 장치 |
KR20050075790A (ko) | 2004-01-16 | 2005-07-22 | (주)바이오빈 | 키토산과 게장이 혼합된 된장의 제조방법 |
KR100542675B1 (ko) | 2004-02-06 | 2006-01-11 | 허차순 | 합성수지 하수관용 고무패킹 소켓 성형장치 |
US20050196917A1 (en) * | 2004-03-03 | 2005-09-08 | Jingyu Lian | Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitors |
KR100587071B1 (ko) | 2004-03-30 | 2006-06-07 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
KR100579869B1 (ko) | 2004-04-21 | 2006-05-22 | 김상국 | 다중구동원을 구비한 하부 방류형 어도 겸용 가동보 수문및 그 구동방법 |
KR20050103065A (ko) | 2004-04-24 | 2005-10-27 | 삼성전자주식회사 | Umts 망에서의 통합된 sgsn 및 ggsn에서의터널 설정 방법 및 장치 |
KR20050123428A (ko) | 2004-06-25 | 2005-12-29 | 엘지전자 주식회사 | 컨트롤 패널과 메탈 시트의 결합구조 |
US7492006B2 (en) * | 2004-08-30 | 2009-02-17 | Samsung Electronics Co., Ltd. | Semiconductor transistors having surface insulation layers and methods of fabricating such transistors |
KR100587086B1 (ko) | 2004-10-29 | 2006-06-08 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
DE102005053322A1 (de) | 2004-11-08 | 2006-06-08 | Hynix Semiconductor Inc., Ichon | Kondensator mit Zirkondioxid und Verfahren zur Herstellung desselben |
KR100713906B1 (ko) | 2004-11-08 | 2007-05-07 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
KR20060072338A (ko) | 2004-12-23 | 2006-06-28 | 주식회사 하이닉스반도체 | 유전체막 형성방법 및 이를 이용한 반도체 소자의캐패시터 형성방법 |
KR100772099B1 (ko) | 2005-06-28 | 2007-11-01 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
KR100744026B1 (ko) | 2005-06-28 | 2007-07-30 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 제조방법 |
KR100670726B1 (ko) | 2005-06-29 | 2007-01-17 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 및 그 형성방법 |
KR100772101B1 (ko) | 2005-06-30 | 2007-11-01 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
KR100717813B1 (ko) | 2005-06-30 | 2007-05-11 | 주식회사 하이닉스반도체 | 나노믹스드 유전막을 갖는 캐패시터 및 그의 제조 방법 |
KR100596805B1 (ko) | 2005-06-30 | 2006-07-04 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
KR100655139B1 (ko) | 2005-11-03 | 2006-12-08 | 주식회사 하이닉스반도체 | 캐패시터 제조 방법 |
KR100655140B1 (ko) | 2005-11-10 | 2006-12-08 | 주식회사 하이닉스반도체 | 캐패시터 및 그 제조 방법 |
KR100656283B1 (ko) | 2005-12-14 | 2006-12-11 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
KR100672766B1 (ko) | 2005-12-27 | 2007-01-22 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
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