JP2014017354A - 成膜方法 - Google Patents
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Abstract
【解決手段】第1の金属を含有する第1の原料ガスに基板を晒し、当該基板を、前記第1の原料ガスと反応する反応ガスに晒すサイクルを1回以上行って第1の金属化合物の膜を前記基板に成膜する第1の成膜ステップと、前記第1の金属化合物の膜が成膜された前記基板を、前記第1の原料ガスに晒し、前記第1の金属化合物の膜に前記第1の金属を吸着させる吸着ステップと、前記第1の金属が吸着された前記基板を、第2の金属を含有する第2の原料ガスに晒し、当該基板を、前記第2の原料ガスと反応する反応ガスに晒すサイクルを1回以上行って第2の金属化合物の膜を前記基板に成膜する第2の成膜ステップとを含む成膜方法により上記の課題が達成される。
【選択図】図3
Description
以下、図1及び図2を参照しながら、本発明の実施形態による成膜方法を実施するに好適な成膜装置を説明する。
図1及び図2を参照すると、成膜装置2は、下端が開口された有天井の円筒体状の処理容器4を有している。この処理容器4の全体は、例えば石英により形成されており、この処理容器4内の天井には、石英製の天井板6が設けられて封止されている。また、この処理容器4の下端開口部には、フランジ部8が設けられている。なお、処理容器4の下端にステンレススチール製のマニホールドを設けてもよい。
なお、図示の便宜上、各ノズル38、40、42、及び44は処理容器4の下部側壁を貫通しているが、実際にはフランジ部8から挿入されている。
次に、図1から図3までを参照しながら、本発明の実施形態による成膜方法を上述の成膜装置2において実施する場合を例にとり説明する。まず、例えば50〜100枚の直径300mmを有するウエハWが搭載されたウエハボート12(図1)を予め所定の温度に設定された処理容器4内に下方より搬入し、蓋部18で処理容器4の下端開口部を閉じる。次いで、パージガス供給部34から処理容器4内へN2ガスを供給すると共に、圧力調整弁86及び真空ポンプ88により、処理容器4内を所定のプロセス圧力に維持する。また、加熱部92への供給電力を増大させてウエハWを所定のプロセス温度に維持する。
所定の時間が経過した後、ガス供給部30の開閉バルブ50Aを閉じることによりTEMAZガスの処理容器4への供給を停止すると、パージガス供給部34からのN2により処理容器4内がパージされる。
ステップS1とS2のサイクルが所定の回数行われていない場合(ステップS3:NO)、ステップS1に戻り、ステップS1とS2が繰り返される。一方、このサイクルが所定の回数行われ、所定の膜厚を有するZrO膜(以下、第1のZrO膜という)が成膜された場合には(ステップS3:YES)、ステップS4へ進む。すなわち、ガス供給部30の開閉バルブ50Aを開くことにより処理容器4にTEMAZガスを供給し、ウエハボート12に搭載されるウエハWをTEMAZガスに晒す。これにより、所定の厚さで成膜されている第1のZrO膜上にTEMAZガスが吸着される。
次いで、所定の時間が経過した後、開閉バルブ52Aを閉じることによりTMAガスの処理容器4への供給を停止すると、パージガス供給部34からのN2により処理容器4内がパージされる。
次に、ステップS7からステップS9(図3)が行われる。これらのステップは、ステップS1からステップS3に対応しており、これらのステップを行うことにより、ZrAlO膜上に、所定の膜厚を有するZrO膜(以下、第2のZrO膜という)が成膜される。この後、処理容器4内がN2ガスでパージされた後にウエハボート12が処理容器4から搬出される。
図4は、成膜装置の概略断面であり、図5及び図6は、真空容器110内の構造を説明する図である。図5及び図6では、説明の便宜上、天板111の図示を省略している。
反応ガスノズル310には、三方弁及び流量調整器を介してTEMAZガス供給源とTMAガス供給源(いずれも不図示)とが接続され、三方弁の切り替えにより、所定の流量でTEMAZガスとTMAガスとが選択的に反応ガスノズル310を通して真空容器110へ供給される。また、反応ガスノズル320には、オゾン(O3)ガス供給源(不図示)が開閉バルブ及び流量調整器(ともに不図示)を介して接続され、反応ガスノズル320通して真空容器110へオゾンガスが供給される。なお、反応ガスノズル310の下方領域を、TEMAZガス及びTMAガスを選択的にウエハWに吸着させるための第1の処理領域P1と言い、反応ガスノズル320の下方領域を、第1の処理領域P1においてウエハWに吸着されたTEMAZガス且つ/又はTMAガスを酸化させる第2の処理領域P2と言う場合がある。
Claims (8)
- 第1の金属を含有する第1の原料ガスに基板を晒し、当該基板を、前記第1の原料ガスと反応する反応ガスに晒す第1のサイクルを行って第1の金属化合物の膜を前記基板に成膜する第1の成膜ステップと、
前記第1の金属化合物の膜が成膜された前記基板を、前記第1の原料ガスに晒し、前記第1の金属化合物の膜に前記第1の原料ガスを吸着させる吸着ステップと、
前記第1の原料ガスが吸着された前記基板を、第2の金属を含有する第2の原料ガスに晒し、当該基板を、前記第2の原料ガスと反応する反応ガスに晒す第2のサイクルを行って第2の金属化合物の膜を前記基板に成膜する第2の成膜ステップと
を含む成膜方法。 - 前記第2の成膜ステップの後に、前記第1の成膜ステップが再び行われる、請求項1に記載の成膜方法。
- 前記第1の成膜ステップ、前記吸着ステップ、及び前記第2の成膜ステップがこの順に繰り返される、請求項1又は2に記載の成膜方法。
- 前記第1の成膜ステップにおいて、前記第1のサイクルが1回以上繰り返される、請求項1から3のいずれか一項に記載の成膜方法。
- 前記第1の金属がジルコニウムであり、前記第2の金属がアルミニウムである、請求項1から4のいずれか一項に記載の成膜方法。
- 前記第1の原料ガスがジルコニウムの有機金属を含み、前記第2の原料ガスがアルミニウムの有機金属を含む、請求項1から5のいずれか一項に記載の成膜方法。
- 前記ジルコニウムの有機金属がテトラキス・エチルメチル・アミノジルコニウムであり、前記アルミニウムの有機金属がトリメチル・アルミニウムである、請求項6に記載の成膜方法。
- 前記反応ガスが酸素を含む、請求項5から7のいずれか一項に記載の成膜方法。
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KR1020130079644A KR20140007289A (ko) | 2012-07-09 | 2013-07-08 | 성막 방법 |
US13/937,070 US9252043B2 (en) | 2012-07-09 | 2013-07-08 | Film deposition method |
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JP6115244B2 (ja) * | 2013-03-28 | 2017-04-19 | 東京エレクトロン株式会社 | 成膜装置 |
US20150255267A1 (en) * | 2014-03-09 | 2015-09-10 | Tokyo Electron Limited | Atomic Layer Deposition of Aluminum-doped High-k Films |
US11462398B2 (en) | 2019-07-17 | 2022-10-04 | International Business Machines Corporation | Ligand selection for ternary oxide thin films |
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US9252043B2 (en) | 2016-02-02 |
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