JP4757449B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4757449B2
JP4757449B2 JP2004021476A JP2004021476A JP4757449B2 JP 4757449 B2 JP4757449 B2 JP 4757449B2 JP 2004021476 A JP2004021476 A JP 2004021476A JP 2004021476 A JP2004021476 A JP 2004021476A JP 4757449 B2 JP4757449 B2 JP 4757449B2
Authority
JP
Japan
Prior art keywords
electrode
semiconductor device
reverse connection
connection diode
intermediate potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004021476A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005217152A (ja
JP2005217152A5 (enExample
Inventor
徹雄 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2004021476A priority Critical patent/JP4757449B2/ja
Priority to US10/981,509 priority patent/US7582918B2/en
Priority to DE102004059453A priority patent/DE102004059453B4/de
Priority to CN2009102063644A priority patent/CN101677099B/zh
Priority to CNB2004101011315A priority patent/CN100394615C/zh
Priority to CN2008100926368A priority patent/CN101266976B/zh
Priority to KR1020050006230A priority patent/KR100641864B1/ko
Publication of JP2005217152A publication Critical patent/JP2005217152A/ja
Publication of JP2005217152A5 publication Critical patent/JP2005217152A5/ja
Priority to KR1020060077634A priority patent/KR100653324B1/ko
Application granted granted Critical
Publication of JP4757449B2 publication Critical patent/JP4757449B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2004021476A 2004-01-29 2004-01-29 半導体装置 Expired - Lifetime JP4757449B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2004021476A JP4757449B2 (ja) 2004-01-29 2004-01-29 半導体装置
US10/981,509 US7582918B2 (en) 2004-01-29 2004-11-05 Semiconductor device with enhanced breakdown voltage
DE102004059453A DE102004059453B4 (de) 2004-01-29 2004-12-09 Halbleitervorrichtung
CNB2004101011315A CN100394615C (zh) 2004-01-29 2004-12-13 半导体器件
CN2009102063644A CN101677099B (zh) 2004-01-29 2004-12-13 半导体器件
CN2008100926368A CN101266976B (zh) 2004-01-29 2004-12-13 半导体器件
KR1020050006230A KR100641864B1 (ko) 2004-01-29 2005-01-24 반도체장치
KR1020060077634A KR100653324B1 (ko) 2004-01-29 2006-08-17 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004021476A JP4757449B2 (ja) 2004-01-29 2004-01-29 半導体装置

Publications (3)

Publication Number Publication Date
JP2005217152A JP2005217152A (ja) 2005-08-11
JP2005217152A5 JP2005217152A5 (enExample) 2006-07-13
JP4757449B2 true JP4757449B2 (ja) 2011-08-24

Family

ID=34805615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004021476A Expired - Lifetime JP4757449B2 (ja) 2004-01-29 2004-01-29 半導体装置

Country Status (5)

Country Link
US (1) US7582918B2 (enExample)
JP (1) JP4757449B2 (enExample)
KR (2) KR100641864B1 (enExample)
CN (3) CN101677099B (enExample)
DE (1) DE102004059453B4 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100440505C (zh) * 2006-09-26 2008-12-03 无锡博创微电子有限公司 耗尽型终端保护结构
JP2010118548A (ja) 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置
WO2010067430A1 (ja) * 2008-12-10 2010-06-17 トヨタ自動車株式会社 半導体装置
JP5535490B2 (ja) * 2009-01-30 2014-07-02 住友電工デバイス・イノベーション株式会社 半導体装置
JP5957171B2 (ja) * 2010-06-30 2016-07-27 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP5748353B2 (ja) * 2011-05-13 2015-07-15 株式会社豊田中央研究所 横型半導体装置
CN102263128B (zh) * 2011-08-12 2014-04-09 淄博美林电子有限公司 一种igbt
JP5765143B2 (ja) * 2011-08-30 2015-08-19 株式会社豊田中央研究所 高電子移動度トランジスタとその製造方法
FR2981200B1 (fr) * 2011-10-10 2017-01-13 Centre Nat De La Rech Scient (Cnrs) Cellule monolithique de circuit integre et notamment cellule de commutation monolithique
CN103871878B (zh) * 2012-12-10 2016-05-04 北大方正集团有限公司 一种在igbt管栅极下方形成厚场氧的方法
CN104981903B (zh) * 2013-03-14 2017-12-01 富士电机株式会社 半导体装置
JP5876008B2 (ja) * 2013-06-03 2016-03-02 ルネサスエレクトロニクス株式会社 半導体装置
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
JP6665478B2 (ja) * 2015-10-14 2020-03-13 富士電機株式会社 半導体装置
JP6627445B2 (ja) * 2015-11-16 2020-01-08 富士電機株式会社 半導体装置
US10424635B2 (en) * 2016-04-06 2019-09-24 Littelfuse, Inc. High voltage semiconductor device with guard rings and method associated therewith
JP6258561B1 (ja) * 2016-05-26 2018-01-10 新電元工業株式会社 半導体装置
CN108124494B (zh) * 2016-09-30 2021-10-22 新电元工业株式会社 半导体装置
WO2018061178A1 (ja) * 2016-09-30 2018-04-05 新電元工業株式会社 半導体装置
JP6828472B2 (ja) * 2017-02-01 2021-02-10 富士電機株式会社 半導体装置
CN107146812B (zh) * 2017-03-29 2019-12-03 西安电子科技大学 增强型栅场板GaN基电流孔径异质结场效应器件及其制作方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194559A (ja) * 1989-01-23 1990-08-01 Fuji Electric Co Ltd 半導体装置
GB9207860D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor component
JPH07169952A (ja) * 1993-12-14 1995-07-04 Fuji Electric Co Ltd 半導体装置
TW295701B (enExample) * 1995-05-22 1997-01-11 Zh Handotai Kenkyu Shinkokai
JP3331846B2 (ja) 1995-12-28 2002-10-07 株式会社日立製作所 半導体装置
JP3906504B2 (ja) 1996-11-27 2007-04-18 株式会社デンソー 絶縁分離型半導体装置
JP3191747B2 (ja) 1997-11-13 2001-07-23 富士電機株式会社 Ｍｏｓ型半導体素子
JPH11243200A (ja) 1998-02-26 1999-09-07 Toshiba Corp 半導体装置
EP1058318B1 (en) * 1999-06-03 2008-04-16 STMicroelectronics S.r.l. Power semiconductor device having an edge termination structure comprising a voltage divider
JP4054155B2 (ja) * 2000-02-01 2008-02-27 三菱電機株式会社 半導体装置
US6614088B1 (en) * 2000-02-18 2003-09-02 James D. Beasom Breakdown improvement method and sturcture for lateral DMOS device
JP4696356B2 (ja) * 2000-12-14 2011-06-08 株式会社デンソー 半導体装置
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
JP2002270742A (ja) 2001-03-12 2002-09-20 Unisia Jecs Corp 半導体装置
JP4140232B2 (ja) * 2001-12-07 2008-08-27 株式会社デンソー 半導体装置
JP2003188381A (ja) * 2001-12-21 2003-07-04 Denso Corp 半導体装置
US7135718B2 (en) * 2002-02-20 2006-11-14 Shindengen Electric Manufacturing Co., Ltd. Diode device and transistor device

Also Published As

Publication number Publication date
JP2005217152A (ja) 2005-08-11
US7582918B2 (en) 2009-09-01
CN101677099A (zh) 2010-03-24
KR20060096399A (ko) 2006-09-11
CN101677099B (zh) 2012-06-27
CN100394615C (zh) 2008-06-11
KR100641864B1 (ko) 2006-11-03
US20050167694A1 (en) 2005-08-04
KR20050077742A (ko) 2005-08-03
CN1649169A (zh) 2005-08-03
DE102004059453A1 (de) 2005-08-25
CN101266976A (zh) 2008-09-17
KR100653324B1 (ko) 2006-12-05
CN101266976B (zh) 2010-06-16
DE102004059453B4 (de) 2010-04-08

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