KR100641864B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR100641864B1
KR100641864B1 KR1020050006230A KR20050006230A KR100641864B1 KR 100641864 B1 KR100641864 B1 KR 100641864B1 KR 1020050006230 A KR1020050006230 A KR 1020050006230A KR 20050006230 A KR20050006230 A KR 20050006230A KR 100641864 B1 KR100641864 B1 KR 100641864B1
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KR
South Korea
Prior art keywords
electrode
intermediate potential
potential
reverse connection
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1020050006230A
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English (en)
Korean (ko)
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KR20050077742A (ko
Inventor
타카하시테쓰오
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20050077742A publication Critical patent/KR20050077742A/ko
Application granted granted Critical
Publication of KR100641864B1 publication Critical patent/KR100641864B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020050006230A 2004-01-29 2005-01-24 반도체장치 Expired - Lifetime KR100641864B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004021476A JP4757449B2 (ja) 2004-01-29 2004-01-29 半導体装置
JPJP-P-2004-00021476 2004-01-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020060077634A Division KR100653324B1 (ko) 2004-01-29 2006-08-17 반도체장치

Publications (2)

Publication Number Publication Date
KR20050077742A KR20050077742A (ko) 2005-08-03
KR100641864B1 true KR100641864B1 (ko) 2006-11-03

Family

ID=34805615

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020050006230A Expired - Lifetime KR100641864B1 (ko) 2004-01-29 2005-01-24 반도체장치
KR1020060077634A Expired - Lifetime KR100653324B1 (ko) 2004-01-29 2006-08-17 반도체장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020060077634A Expired - Lifetime KR100653324B1 (ko) 2004-01-29 2006-08-17 반도체장치

Country Status (5)

Country Link
US (1) US7582918B2 (enExample)
JP (1) JP4757449B2 (enExample)
KR (2) KR100641864B1 (enExample)
CN (3) CN101677099B (enExample)
DE (1) DE102004059453B4 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100440505C (zh) * 2006-09-26 2008-12-03 无锡博创微电子有限公司 耗尽型终端保护结构
JP2010118548A (ja) 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置
WO2010067430A1 (ja) * 2008-12-10 2010-06-17 トヨタ自動車株式会社 半導体装置
JP5535490B2 (ja) * 2009-01-30 2014-07-02 住友電工デバイス・イノベーション株式会社 半導体装置
JP5957171B2 (ja) * 2010-06-30 2016-07-27 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP5748353B2 (ja) * 2011-05-13 2015-07-15 株式会社豊田中央研究所 横型半導体装置
CN102263128B (zh) * 2011-08-12 2014-04-09 淄博美林电子有限公司 一种igbt
JP5765143B2 (ja) * 2011-08-30 2015-08-19 株式会社豊田中央研究所 高電子移動度トランジスタとその製造方法
FR2981200B1 (fr) * 2011-10-10 2017-01-13 Centre Nat De La Rech Scient (Cnrs) Cellule monolithique de circuit integre et notamment cellule de commutation monolithique
CN103871878B (zh) * 2012-12-10 2016-05-04 北大方正集团有限公司 一种在igbt管栅极下方形成厚场氧的方法
CN104981903B (zh) * 2013-03-14 2017-12-01 富士电机株式会社 半导体装置
JP5876008B2 (ja) * 2013-06-03 2016-03-02 ルネサスエレクトロニクス株式会社 半導体装置
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
JP6665478B2 (ja) * 2015-10-14 2020-03-13 富士電機株式会社 半導体装置
JP6627445B2 (ja) * 2015-11-16 2020-01-08 富士電機株式会社 半導体装置
US10424635B2 (en) * 2016-04-06 2019-09-24 Littelfuse, Inc. High voltage semiconductor device with guard rings and method associated therewith
JP6258561B1 (ja) * 2016-05-26 2018-01-10 新電元工業株式会社 半導体装置
CN108124494B (zh) * 2016-09-30 2021-10-22 新电元工业株式会社 半导体装置
WO2018061178A1 (ja) * 2016-09-30 2018-04-05 新電元工業株式会社 半導体装置
JP6828472B2 (ja) * 2017-02-01 2021-02-10 富士電機株式会社 半導体装置
CN107146812B (zh) * 2017-03-29 2019-12-03 西安电子科技大学 增强型栅场板GaN基电流孔径异质结场效应器件及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169952A (ja) * 1993-12-14 1995-07-04 Fuji Electric Co Ltd 半導体装置
JPH09186315A (ja) * 1995-12-28 1997-07-15 Hitachi Ltd 半導体装置
JPH11243200A (ja) 1998-02-26 1999-09-07 Toshiba Corp 半導体装置
JP2002270742A (ja) 2001-03-12 2002-09-20 Unisia Jecs Corp 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194559A (ja) * 1989-01-23 1990-08-01 Fuji Electric Co Ltd 半導体装置
GB9207860D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor component
TW295701B (enExample) * 1995-05-22 1997-01-11 Zh Handotai Kenkyu Shinkokai
JP3906504B2 (ja) 1996-11-27 2007-04-18 株式会社デンソー 絶縁分離型半導体装置
JP3191747B2 (ja) 1997-11-13 2001-07-23 富士電機株式会社 Ｍｏｓ型半導体素子
EP1058318B1 (en) * 1999-06-03 2008-04-16 STMicroelectronics S.r.l. Power semiconductor device having an edge termination structure comprising a voltage divider
JP4054155B2 (ja) * 2000-02-01 2008-02-27 三菱電機株式会社 半導体装置
US6614088B1 (en) * 2000-02-18 2003-09-02 James D. Beasom Breakdown improvement method and sturcture for lateral DMOS device
JP4696356B2 (ja) * 2000-12-14 2011-06-08 株式会社デンソー 半導体装置
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
JP4140232B2 (ja) * 2001-12-07 2008-08-27 株式会社デンソー 半導体装置
JP2003188381A (ja) * 2001-12-21 2003-07-04 Denso Corp 半導体装置
US7135718B2 (en) * 2002-02-20 2006-11-14 Shindengen Electric Manufacturing Co., Ltd. Diode device and transistor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169952A (ja) * 1993-12-14 1995-07-04 Fuji Electric Co Ltd 半導体装置
JPH09186315A (ja) * 1995-12-28 1997-07-15 Hitachi Ltd 半導体装置
JPH11243200A (ja) 1998-02-26 1999-09-07 Toshiba Corp 半導体装置
JP2002270742A (ja) 2001-03-12 2002-09-20 Unisia Jecs Corp 半導体装置

Also Published As

Publication number Publication date
JP2005217152A (ja) 2005-08-11
US7582918B2 (en) 2009-09-01
CN101677099A (zh) 2010-03-24
JP4757449B2 (ja) 2011-08-24
KR20060096399A (ko) 2006-09-11
CN101677099B (zh) 2012-06-27
CN100394615C (zh) 2008-06-11
US20050167694A1 (en) 2005-08-04
KR20050077742A (ko) 2005-08-03
CN1649169A (zh) 2005-08-03
DE102004059453A1 (de) 2005-08-25
CN101266976A (zh) 2008-09-17
KR100653324B1 (ko) 2006-12-05
CN101266976B (zh) 2010-06-16
DE102004059453B4 (de) 2010-04-08

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