CN101677099B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101677099B
CN101677099B CN2009102063644A CN200910206364A CN101677099B CN 101677099 B CN101677099 B CN 101677099B CN 2009102063644 A CN2009102063644 A CN 2009102063644A CN 200910206364 A CN200910206364 A CN 200910206364A CN 101677099 B CN101677099 B CN 101677099B
Authority
CN
China
Prior art keywords
electrode
reverse connection
intermediate potential
semiconductor device
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2009102063644A
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English (en)
Chinese (zh)
Other versions
CN101677099A (zh
Inventor
高桥徹雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN101677099A publication Critical patent/CN101677099A/zh
Application granted granted Critical
Publication of CN101677099B publication Critical patent/CN101677099B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN2009102063644A 2004-01-29 2004-12-13 半导体器件 Expired - Lifetime CN101677099B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP021476/2004 2004-01-29
JP2004021476A JP4757449B2 (ja) 2004-01-29 2004-01-29 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2004101011315A Division CN100394615C (zh) 2004-01-29 2004-12-13 半导体器件

Publications (2)

Publication Number Publication Date
CN101677099A CN101677099A (zh) 2010-03-24
CN101677099B true CN101677099B (zh) 2012-06-27

Family

ID=34805615

Family Applications (3)

Application Number Title Priority Date Filing Date
CN2009102063644A Expired - Lifetime CN101677099B (zh) 2004-01-29 2004-12-13 半导体器件
CN2008100926368A Expired - Lifetime CN101266976B (zh) 2004-01-29 2004-12-13 半导体器件
CNB2004101011315A Expired - Lifetime CN100394615C (zh) 2004-01-29 2004-12-13 半导体器件

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN2008100926368A Expired - Lifetime CN101266976B (zh) 2004-01-29 2004-12-13 半导体器件
CNB2004101011315A Expired - Lifetime CN100394615C (zh) 2004-01-29 2004-12-13 半导体器件

Country Status (5)

Country Link
US (1) US7582918B2 (enExample)
JP (1) JP4757449B2 (enExample)
KR (2) KR100641864B1 (enExample)
CN (3) CN101677099B (enExample)
DE (1) DE102004059453B4 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100440505C (zh) * 2006-09-26 2008-12-03 无锡博创微电子有限公司 耗尽型终端保护结构
JP2010118548A (ja) 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置
WO2010067430A1 (ja) * 2008-12-10 2010-06-17 トヨタ自動車株式会社 半導体装置
JP5535490B2 (ja) * 2009-01-30 2014-07-02 住友電工デバイス・イノベーション株式会社 半導体装置
JP5957171B2 (ja) * 2010-06-30 2016-07-27 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP5748353B2 (ja) * 2011-05-13 2015-07-15 株式会社豊田中央研究所 横型半導体装置
CN102263128B (zh) * 2011-08-12 2014-04-09 淄博美林电子有限公司 一种igbt
JP5765143B2 (ja) * 2011-08-30 2015-08-19 株式会社豊田中央研究所 高電子移動度トランジスタとその製造方法
FR2981200B1 (fr) * 2011-10-10 2017-01-13 Centre Nat De La Rech Scient (Cnrs) Cellule monolithique de circuit integre et notamment cellule de commutation monolithique
CN103871878B (zh) * 2012-12-10 2016-05-04 北大方正集团有限公司 一种在igbt管栅极下方形成厚场氧的方法
CN104981903B (zh) * 2013-03-14 2017-12-01 富士电机株式会社 半导体装置
JP5876008B2 (ja) * 2013-06-03 2016-03-02 ルネサスエレクトロニクス株式会社 半導体装置
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
JP6665478B2 (ja) * 2015-10-14 2020-03-13 富士電機株式会社 半導体装置
JP6627445B2 (ja) * 2015-11-16 2020-01-08 富士電機株式会社 半導体装置
US10424635B2 (en) * 2016-04-06 2019-09-24 Littelfuse, Inc. High voltage semiconductor device with guard rings and method associated therewith
JP6258561B1 (ja) * 2016-05-26 2018-01-10 新電元工業株式会社 半導体装置
CN108124494B (zh) * 2016-09-30 2021-10-22 新电元工业株式会社 半导体装置
WO2018061178A1 (ja) * 2016-09-30 2018-04-05 新電元工業株式会社 半導体装置
JP6828472B2 (ja) * 2017-02-01 2021-02-10 富士電機株式会社 半導体装置
CN107146812B (zh) * 2017-03-29 2019-12-03 西安电子科技大学 增强型栅场板GaN基电流孔径异质结场效应器件及其制作方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194559A (ja) * 1989-01-23 1990-08-01 Fuji Electric Co Ltd 半導体装置
GB9207860D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor component
JPH07169952A (ja) * 1993-12-14 1995-07-04 Fuji Electric Co Ltd 半導体装置
TW295701B (enExample) * 1995-05-22 1997-01-11 Zh Handotai Kenkyu Shinkokai
JP3331846B2 (ja) 1995-12-28 2002-10-07 株式会社日立製作所 半導体装置
JP3906504B2 (ja) 1996-11-27 2007-04-18 株式会社デンソー 絶縁分離型半導体装置
JP3191747B2 (ja) 1997-11-13 2001-07-23 富士電機株式会社 Ｍｏｓ型半導体素子
JPH11243200A (ja) 1998-02-26 1999-09-07 Toshiba Corp 半導体装置
EP1058318B1 (en) * 1999-06-03 2008-04-16 STMicroelectronics S.r.l. Power semiconductor device having an edge termination structure comprising a voltage divider
JP4054155B2 (ja) * 2000-02-01 2008-02-27 三菱電機株式会社 半導体装置
US6614088B1 (en) * 2000-02-18 2003-09-02 James D. Beasom Breakdown improvement method and sturcture for lateral DMOS device
JP4696356B2 (ja) * 2000-12-14 2011-06-08 株式会社デンソー 半導体装置
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
JP2002270742A (ja) 2001-03-12 2002-09-20 Unisia Jecs Corp 半導体装置
JP4140232B2 (ja) * 2001-12-07 2008-08-27 株式会社デンソー 半導体装置
JP2003188381A (ja) * 2001-12-21 2003-07-04 Denso Corp 半導体装置
US7135718B2 (en) * 2002-02-20 2006-11-14 Shindengen Electric Manufacturing Co., Ltd. Diode device and transistor device

Also Published As

Publication number Publication date
JP2005217152A (ja) 2005-08-11
US7582918B2 (en) 2009-09-01
CN101677099A (zh) 2010-03-24
JP4757449B2 (ja) 2011-08-24
KR20060096399A (ko) 2006-09-11
CN100394615C (zh) 2008-06-11
KR100641864B1 (ko) 2006-11-03
US20050167694A1 (en) 2005-08-04
KR20050077742A (ko) 2005-08-03
CN1649169A (zh) 2005-08-03
DE102004059453A1 (de) 2005-08-25
CN101266976A (zh) 2008-09-17
KR100653324B1 (ko) 2006-12-05
CN101266976B (zh) 2010-06-16
DE102004059453B4 (de) 2010-04-08

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Granted publication date: 20120627